JP2004297070A5 - - Google Patents
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- Publication number
- JP2004297070A5 JP2004297070A5 JP2004092271A JP2004092271A JP2004297070A5 JP 2004297070 A5 JP2004297070 A5 JP 2004297070A5 JP 2004092271 A JP2004092271 A JP 2004092271A JP 2004092271 A JP2004092271 A JP 2004092271A JP 2004297070 A5 JP2004297070 A5 JP 2004297070A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- group iii
- nitride
- substrate
- disposed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 150000004767 nitrides Chemical class 0.000 claims 10
- 239000000758 substrate Substances 0.000 claims 9
- 238000000034 method Methods 0.000 claims 5
- 239000000956 alloy Substances 0.000 claims 3
- 229910045601 alloy Inorganic materials 0.000 claims 3
- 239000000203 mixture Substances 0.000 claims 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 238000000059 patterning Methods 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/397,799 US6986693B2 (en) | 2003-03-26 | 2003-03-26 | Group III-nitride layers with patterned surfaces |
| US10/397799 | 2003-03-26 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011127281A Division JP5721545B2 (ja) | 2003-03-26 | 2011-06-07 | Iii族窒化物を有する装置及びiii族窒化物を有する装置の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2004297070A JP2004297070A (ja) | 2004-10-21 |
| JP2004297070A5 true JP2004297070A5 (https=) | 2007-03-01 |
| JP4790226B2 JP4790226B2 (ja) | 2011-10-12 |
Family
ID=32869148
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004092271A Expired - Fee Related JP4790226B2 (ja) | 2003-03-26 | 2004-03-26 | Iii族窒化物を有する装置及びiii族窒化物を有する装置の製造方法 |
| JP2011127281A Expired - Fee Related JP5721545B2 (ja) | 2003-03-26 | 2011-06-07 | Iii族窒化物を有する装置及びiii族窒化物を有する装置の製造方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011127281A Expired - Fee Related JP5721545B2 (ja) | 2003-03-26 | 2011-06-07 | Iii族窒化物を有する装置及びiii族窒化物を有する装置の製造方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (6) | US6986693B2 (https=) |
| EP (3) | EP3035372A1 (https=) |
| JP (2) | JP4790226B2 (https=) |
| KR (1) | KR101050676B1 (https=) |
| CN (2) | CN100397559C (https=) |
| DE (1) | DE602004006043T2 (https=) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100492482B1 (ko) * | 2002-09-04 | 2005-06-03 | 한국과학기술연구원 | Pembe로 제조된 상온 자성반도체 및 그 소자 |
| US6986693B2 (en) * | 2003-03-26 | 2006-01-17 | Lucent Technologies Inc. | Group III-nitride layers with patterned surfaces |
| US6960526B1 (en) * | 2003-10-10 | 2005-11-01 | The United States Of America As Represented By The Secretary Of The Army | Method of fabricating sub-100 nanometer field emitter tips comprising group III-nitride semiconductors |
| US7276423B2 (en) * | 2003-12-05 | 2007-10-02 | International Rectifier Corporation | III-nitride device and method with variable epitaxial growth direction |
| EP1741144A1 (de) * | 2004-04-29 | 2007-01-10 | Osram Opto Semiconductors GmbH | Verfahren zum herstellen eines strahlungsemittierenden halbleiterchips |
| US20050244159A1 (en) * | 2004-04-30 | 2005-11-03 | Aref Chowdhury | Optical wavelength-conversion |
| KR101041843B1 (ko) * | 2005-07-30 | 2011-06-17 | 삼성엘이디 주식회사 | 질화물계 화합물 반도체 발광소자 및 그 제조방법 |
| US7952109B2 (en) * | 2006-07-10 | 2011-05-31 | Alcatel-Lucent Usa Inc. | Light-emitting crystal structures |
| EP2171748A1 (en) * | 2007-07-26 | 2010-04-07 | S.O.I.Tec Silicon on Insulator Technologies | Epitaxial methods and templates grown by the methods |
| JP2009145440A (ja) * | 2007-12-12 | 2009-07-02 | Sumitomo Metal Mining Co Ltd | 波長変換素子 |
| WO2009141724A1 (en) * | 2008-05-23 | 2009-11-26 | S.O.I.Tec Silicon On Insulator Technologies | Formation of substantially pit free indium gallium nitride |
| JP5132524B2 (ja) * | 2008-11-04 | 2013-01-30 | キヤノン株式会社 | 窒化ガリウム系化合物半導体層の移設方法、及び窒化ガリウム系化合物半導体層が接合された基板 |
| US8507304B2 (en) * | 2009-07-17 | 2013-08-13 | Applied Materials, Inc. | Method of forming a group III-nitride crystalline film on a patterned substrate by hydride vapor phase epitaxy (HVPE) |
| US20110027973A1 (en) * | 2009-07-31 | 2011-02-03 | Applied Materials, Inc. | Method of forming led structures |
| US8148241B2 (en) * | 2009-07-31 | 2012-04-03 | Applied Materials, Inc. | Indium surfactant assisted HVPE of high quality gallium nitride and gallium nitride alloy films |
| FR2995729B1 (fr) * | 2012-09-18 | 2016-01-01 | Aledia | Dispositif opto-electrique a microfils ou nanofils semiconducteurs et son procede de fabrication |
| JP2015061010A (ja) * | 2013-09-20 | 2015-03-30 | 豊田合成株式会社 | Iii族窒化物半導体発光素子とその製造方法と実装体の製造方法 |
| US10174205B2 (en) * | 2015-10-19 | 2019-01-08 | Xerox Corporation | Printing process |
| CN105870006A (zh) * | 2016-06-08 | 2016-08-17 | 江苏新广联半导体有限公司 | GaN基材料的侧壁加工工艺 |
| CN106531614A (zh) * | 2016-09-29 | 2017-03-22 | 北京科技大学 | 一种在蓝宝石衬底上生长具有不同极性GaN结构的方法 |
| JP6957982B2 (ja) | 2017-05-29 | 2021-11-02 | 三菱電機株式会社 | 半導体装置及びその製造方法 |
| US12604572B2 (en) * | 2021-11-12 | 2026-04-14 | Lumileds Singapore Pte. Ltd. | Thin-film LED array with low refractive index patterned structures and reflector |
| US12490570B2 (en) | 2021-11-12 | 2025-12-02 | Lumileds Singapore Pte. Ltd. | Thin-film LED array with low refractive index patterned structures |
Family Cites Families (50)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4987377A (en) * | 1988-03-22 | 1991-01-22 | The United States Of America As Represented By The Secretary Of The Navy | Field emitter array integrated distributed amplifiers |
| JPH0239131A (ja) * | 1988-07-29 | 1990-02-08 | Hitachi Ltd | 周波数間隔安定化方法、光ヘテロダイン又は光ホモダイン通信方法 |
| US5334908A (en) * | 1990-07-18 | 1994-08-02 | International Business Machines Corporation | Structures and processes for fabricating field emission cathode tips using secondary cusp |
| DE69030589T2 (de) | 1990-07-18 | 1997-11-13 | Ibm | Struktur und verfahren für feldemissionskathodenherstellung |
| US5141459A (en) * | 1990-07-18 | 1992-08-25 | International Business Machines Corporation | Structures and processes for fabricating field emission cathodes |
| US5536193A (en) * | 1991-11-07 | 1996-07-16 | Microelectronics And Computer Technology Corporation | Method of making wide band gap field emitter |
| US5218771A (en) * | 1992-04-15 | 1993-06-15 | Redford Peter M | Orientation sensing apparatus |
| US5229331A (en) * | 1992-02-14 | 1993-07-20 | Micron Technology, Inc. | Method to form self-aligned gate structures around cold cathode emitter tips using chemical mechanical polishing technology |
| JP3244529B2 (ja) * | 1992-04-16 | 2002-01-07 | アジレント・テクノロジーズ・インク | 面発光型第2高調波生成素子 |
| US5359256A (en) * | 1992-07-30 | 1994-10-25 | The United States Of America As Represented By The Secretary Of The Navy | Regulatable field emitter device and method of production thereof |
| US5449435A (en) * | 1992-11-02 | 1995-09-12 | Motorola, Inc. | Field emission device and method of making the same |
| US5345456A (en) * | 1993-03-11 | 1994-09-06 | National Research Council Of Canada | Spatially addressable surface emission sum frequency device |
| US5363021A (en) * | 1993-07-12 | 1994-11-08 | Cornell Research Foundation, Inc. | Massively parallel array cathode |
| US5814156A (en) * | 1993-09-08 | 1998-09-29 | Uvtech Systems Inc. | Photoreactive surface cleaning |
| JP3579127B2 (ja) * | 1994-05-18 | 2004-10-20 | 株式会社東芝 | 電界電子放出素子、この電界電子放出素子を用いた電子放出源および平面ディスプレイ装置、および電界電子放出素子の製造方法 |
| US5440574A (en) * | 1994-06-02 | 1995-08-08 | Spectra-Physics Laserplane, Inc. | Solid-state laser |
| US5450429A (en) * | 1994-06-02 | 1995-09-12 | Spectra-Physics Laserplane, Inc. | Efficient linear frequency doubled solid-state laser |
| US5420876A (en) * | 1994-06-02 | 1995-05-30 | Spectra-Physics Laserplane, Inc. | Gadolinium vanadate laser |
| US5479431A (en) * | 1994-06-02 | 1995-12-26 | Spectra-Physics Laserplane, Inc. | Solid-state laser with active etalon and method therefor |
| JPH07335116A (ja) * | 1994-06-14 | 1995-12-22 | Toshiba Corp | 電子放出素子 |
| JPH0851248A (ja) | 1994-08-09 | 1996-02-20 | Hitachi Ltd | 内部共振型面発光shgレーザ |
| DE19601991A1 (de) * | 1995-01-31 | 1996-08-01 | Zeiss Carl Fa | Laser-Anordung und Verfahren zum Betrieb einer derartigen Laser-Anordnung |
| US5628659A (en) * | 1995-04-24 | 1997-05-13 | Microelectronics And Computer Corporation | Method of making a field emission electron source with random micro-tip structures |
| US5915164A (en) * | 1995-12-28 | 1999-06-22 | U.S. Philips Corporation | Methods of making high voltage GaN-A1N based semiconductor devices |
| JP2917898B2 (ja) * | 1996-03-29 | 1999-07-12 | 日本電気株式会社 | 電界放出冷陰極素子およびその使用方法 |
| JP3764792B2 (ja) | 1997-02-20 | 2006-04-12 | シャープ株式会社 | 窒化物半導体のエッチング方法 |
| US6218771B1 (en) * | 1998-06-26 | 2001-04-17 | University Of Houston | Group III nitride field emitters |
| JP2000149765A (ja) * | 1998-11-13 | 2000-05-30 | Ise Electronics Corp | 蛍光表示装置 |
| US6172325B1 (en) * | 1999-02-10 | 2001-01-09 | Electro Scientific Industries, Inc. | Laser processing power output stabilization apparatus and method employing processing position feedback |
| US7161148B1 (en) | 1999-05-31 | 2007-01-09 | Crystals And Technologies, Ltd. | Tip structures, devices on their basis, and methods for their preparation |
| US6265322B1 (en) * | 1999-09-21 | 2001-07-24 | Agere Systems Guardian Corp. | Selective growth process for group III-nitride-based semiconductors |
| JP3639867B2 (ja) * | 2000-03-21 | 2005-04-20 | 日本電信電話株式会社 | 電子素子 |
| JP3882539B2 (ja) * | 2000-07-18 | 2007-02-21 | ソニー株式会社 | 半導体発光素子およびその製造方法、並びに画像表示装置 |
| JP3906653B2 (ja) * | 2000-07-18 | 2007-04-18 | ソニー株式会社 | 画像表示装置及びその製造方法 |
| JP3542031B2 (ja) * | 2000-11-20 | 2004-07-14 | 松下電器産業株式会社 | 冷陰極形成方法、及び電子放出素子並びにその応用デバイス |
| JP4724924B2 (ja) * | 2001-02-08 | 2011-07-13 | ソニー株式会社 | 表示装置の製造方法 |
| JP2002270516A (ja) * | 2001-03-07 | 2002-09-20 | Nec Corp | Iii族窒化物半導体の成長方法、iii族窒化物半導体膜およびそれを用いた半導体素子 |
| JP2002341166A (ja) * | 2001-05-16 | 2002-11-27 | Fuji Photo Film Co Ltd | 光導波路素子および半導体レーザ装置 |
| US6448100B1 (en) * | 2001-06-12 | 2002-09-10 | Hewlett-Packard Compnay | Method for fabricating self-aligned field emitter tips |
| US6579735B1 (en) * | 2001-12-03 | 2003-06-17 | Xerox Corporation | Method for fabricating GaN field emitter arrays |
| US6781159B2 (en) * | 2001-12-03 | 2004-08-24 | Xerox Corporation | Field emission display device |
| JP3912117B2 (ja) | 2002-01-17 | 2007-05-09 | ソニー株式会社 | 結晶成長方法、半導体発光素子及びその製造方法 |
| JP2003218395A (ja) | 2002-01-18 | 2003-07-31 | Sony Corp | 半導体発光素子、半導体レーザ素子及びこれを用いた発光装置 |
| US7002182B2 (en) | 2002-09-06 | 2006-02-21 | Sony Corporation | Semiconductor light emitting device integral type semiconductor light emitting unit image display unit and illuminating unit |
| WO2004025733A1 (en) | 2002-09-16 | 2004-03-25 | Hrl Laboratories, Llc | Non-planar nitride-based semiconductor structure and metehod for fabricating the same |
| US7099073B2 (en) | 2002-09-27 | 2006-08-29 | Lucent Technologies Inc. | Optical frequency-converters based on group III-nitrides |
| JP2004288799A (ja) | 2003-03-20 | 2004-10-14 | Sony Corp | 半導体発光素子およびその製造方法、集積型半導体発光装置およびその製造方法、画像表示装置およびその製造方法ならびに照明装置およびその製造方法 |
| US6986693B2 (en) | 2003-03-26 | 2006-01-17 | Lucent Technologies Inc. | Group III-nitride layers with patterned surfaces |
| US7161188B2 (en) * | 2004-06-28 | 2007-01-09 | Matsushita Electric Industrial Co., Ltd. | Semiconductor light emitting element, semiconductor light emitting device, and method for fabricating semiconductor light emitting element |
| US7952109B2 (en) * | 2006-07-10 | 2011-05-31 | Alcatel-Lucent Usa Inc. | Light-emitting crystal structures |
-
2003
- 2003-03-26 US US10/397,799 patent/US6986693B2/en not_active Expired - Lifetime
-
2004
- 2004-02-24 DE DE602004006043T patent/DE602004006043T2/de not_active Expired - Lifetime
- 2004-02-24 EP EP16150767.8A patent/EP3035372A1/en not_active Withdrawn
- 2004-02-24 EP EP06027111.1A patent/EP1780748B1/en not_active Expired - Lifetime
- 2004-02-24 EP EP04250979A patent/EP1467404B1/en not_active Expired - Lifetime
- 2004-03-19 KR KR1020040018820A patent/KR101050676B1/ko not_active Expired - Fee Related
- 2004-03-25 CN CNB2004100304925A patent/CN100397559C/zh not_active Expired - Fee Related
- 2004-03-25 CN CN2008100949590A patent/CN101261936B/zh not_active Expired - Fee Related
- 2004-03-26 JP JP2004092271A patent/JP4790226B2/ja not_active Expired - Fee Related
-
2005
- 2005-07-13 US US11/180,350 patent/US7084563B2/en not_active Expired - Lifetime
-
2006
- 2006-05-27 US US11/442,032 patent/US7468578B2/en not_active Expired - Lifetime
-
2008
- 2008-12-01 US US12/315,202 patent/US8070966B2/en not_active Expired - Fee Related
-
2011
- 2011-06-07 JP JP2011127281A patent/JP5721545B2/ja not_active Expired - Fee Related
- 2011-09-29 US US13/248,394 patent/US8613860B2/en not_active Ceased
-
2015
- 2015-12-23 US US14/757,799 patent/USRE47767E1/en not_active Expired - Fee Related
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