JP2022504524A5 - - Google Patents

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Publication number
JP2022504524A5
JP2022504524A5 JP2021519576A JP2021519576A JP2022504524A5 JP 2022504524 A5 JP2022504524 A5 JP 2022504524A5 JP 2021519576 A JP2021519576 A JP 2021519576A JP 2021519576 A JP2021519576 A JP 2021519576A JP 2022504524 A5 JP2022504524 A5 JP 2022504524A5
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JP
Japan
Prior art keywords
led
layer
array
semiconductor layer
holes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2021519576A
Other languages
English (en)
Japanese (ja)
Other versions
JP7407181B2 (ja
JP2022504524A (ja
Filing date
Publication date
Priority claimed from GBGB1816455.8A external-priority patent/GB201816455D0/en
Application filed filed Critical
Publication of JP2022504524A publication Critical patent/JP2022504524A/ja
Publication of JP2022504524A5 publication Critical patent/JP2022504524A5/ja
Priority to JP2023212818A priority Critical patent/JP7617236B2/ja
Application granted granted Critical
Publication of JP7407181B2 publication Critical patent/JP7407181B2/ja
Priority to JP2025000067A priority patent/JP7829745B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2021519576A 2018-10-09 2019-10-08 Ｌｅｄアレイ Active JP7407181B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2023212818A JP7617236B2 (ja) 2018-10-09 2023-12-18 Ｌｅｄアレイ
JP2025000067A JP7829745B2 (ja) 2018-10-09 2025-01-06 Ｌｅｄアレイ

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB1816455.8 2018-10-09
GBGB1816455.8A GB201816455D0 (en) 2018-10-09 2018-10-09 LED Arrays
PCT/GB2019/052843 WO2020074875A1 (en) 2018-10-09 2019-10-08 LED Arrays

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2023212818A Division JP7617236B2 (ja) 2018-10-09 2023-12-18 Ｌｅｄアレイ

Publications (3)

Publication Number Publication Date
JP2022504524A JP2022504524A (ja) 2022-01-13
JP2022504524A5 true JP2022504524A5 (https=) 2022-10-17
JP7407181B2 JP7407181B2 (ja) 2023-12-28

Family

ID=64394978

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2021519576A Active JP7407181B2 (ja) 2018-10-09 2019-10-08 Ｌｅｄアレイ
JP2023212818A Active JP7617236B2 (ja) 2018-10-09 2023-12-18 Ｌｅｄアレイ
JP2025000067A Active JP7829745B2 (ja) 2018-10-09 2025-01-06 Ｌｅｄアレイ

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2023212818A Active JP7617236B2 (ja) 2018-10-09 2023-12-18 Ｌｅｄアレイ
JP2025000067A Active JP7829745B2 (ja) 2018-10-09 2025-01-06 Ｌｅｄアレイ

Country Status (7)

Country Link
US (2) US20210335884A1 (https=)
EP (1) EP3864699A1 (https=)
JP (3) JP7407181B2 (https=)
KR (2) KR102790443B1 (https=)
CN (2) CN121038476A (https=)
GB (1) GB201816455D0 (https=)
WO (1) WO2020074875A1 (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
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GB201910348D0 (en) 2019-07-19 2019-09-04 Univ Sheffield LED Arrays
WO2021102013A1 (en) * 2019-11-18 2021-05-27 Avicenatech Corp. High speed and multi-contact leds for data communication
FR3112026B1 (fr) * 2020-06-30 2022-09-23 Aledia Dispositif optoélectronique et procédé de fabrication
CN111864024A (zh) * 2020-07-24 2020-10-30 武汉大学 一种选区外延生长Micro-LED芯片及其制备方法
JP7591785B2 (ja) * 2020-12-25 2024-11-29 セイコーエプソン株式会社 発光装置の製造方法
WO2022203655A1 (en) * 2021-03-23 2022-09-29 Google Llc Baseline and shaped pulse driving for micro-light emitting diode display
DE102021134107A1 (de) 2021-12-21 2023-06-22 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zum herstellen von mikro-halbleiter-leuchtdioden-strukturen und halbleiter-leuchtdiode
CN118867079A (zh) * 2023-04-27 2024-10-29 苏州晶湛半导体有限公司 一种半导体结构及其制作方法
US12446385B2 (en) * 2023-11-03 2025-10-14 Snap Inc. Monolithic RGB microLED array
CN119050125B (zh) * 2024-08-21 2025-08-26 西安电子科技大学广州研究院 一种多种颜色led阵列及其制备方法

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US6329676B1 (en) * 1999-03-01 2001-12-11 Toru Takayama Flat panel solid state light source
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JP4651161B2 (ja) * 2000-07-03 2011-03-16 宣彦 澤木 半導体素子およびその製造方法
JP2003142728A (ja) * 2001-11-02 2003-05-16 Sharp Corp 半導体発光素子の製造方法
EP1652238B1 (en) * 2003-08-08 2010-10-27 Kang, Sang-kyu Nitride micro light emitting diode with high brightness and method of manufacturing the same
JP4920298B2 (ja) * 2005-04-28 2012-04-18 シャープ株式会社 半導体発光デバイスおよび半導体デバイスの製造方法
JP4525500B2 (ja) * 2005-07-14 2010-08-18 パナソニック電工株式会社 半導体発光素子およびそれを用いる照明装置ならびに半導体発光素子の製造方法
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JP2009071220A (ja) * 2007-09-18 2009-04-02 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子
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JP4586935B2 (ja) * 2010-03-17 2010-11-24 パナソニック電工株式会社 半導体発光素子の製造方法
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US20150137072A1 (en) * 2013-11-19 2015-05-21 Gwangju Institute Of Science And Technology Mask for forming semiconductor layer, semiconductor device, and method of fabricating the same
KR101452801B1 (ko) * 2014-03-25 2014-10-22 광주과학기술원 발광다이오드 및 이의 제조방법
KR20160027610A (ko) 2014-09-01 2016-03-10 삼성전자주식회사 나노구조 반도체 발광소자
US9620559B2 (en) * 2014-09-26 2017-04-11 Glo Ab Monolithic image chip for near-to-eye display
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KR101837623B1 (ko) * 2015-12-21 2018-03-13 (재)한국나노기술원 질화물 반도체 발광소자 및 그 제조방법
GB201705755D0 (en) * 2017-04-10 2017-05-24 Norwegian Univ Of Science And Tech (Ntnu) Nanostructure
CN207183308U (zh) * 2017-09-21 2018-04-03 山西飞虹微纳米光电科技有限公司 基于GaN基轴向纳米棒阵列的LED
CN107833878B (zh) 2017-11-29 2019-06-14 北京工业大学 一种全色堆栈式外延的Micro-LED倒装阵列制备方法
FR3080487B1 (fr) * 2018-04-20 2020-06-12 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de fabrication d’un dispositif optoelectronique a matrice de diodes
CN111864024A (zh) 2020-07-24 2020-10-30 武汉大学 一种选区外延生长Micro-LED芯片及其制备方法

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