GB201816455D0 - LED Arrays - Google Patents

LED Arrays

Info

Publication number
GB201816455D0
GB201816455D0 GBGB1816455.8A GB201816455A GB201816455D0 GB 201816455 D0 GB201816455 D0 GB 201816455D0 GB 201816455 A GB201816455 A GB 201816455A GB 201816455 D0 GB201816455 D0 GB 201816455D0
Authority
GB
United Kingdom
Prior art keywords
led arrays
arrays
led
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
GBGB1816455.8A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Sheffield
Original Assignee
University of Sheffield
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of Sheffield filed Critical University of Sheffield
Priority to GBGB1816455.8A priority Critical patent/GB201816455D0/en
Publication of GB201816455D0 publication Critical patent/GB201816455D0/en
Priority to US17/250,997 priority patent/US20210335884A1/en
Priority to KR1020257010201A priority patent/KR20250050979A/ko
Priority to EP19787394.6A priority patent/EP3864699A1/en
Priority to JP2021519576A priority patent/JP7407181B2/ja
Priority to CN202511004658.4A priority patent/CN121038476A/zh
Priority to PCT/GB2019/052843 priority patent/WO2020074875A1/en
Priority to KR1020217013348A priority patent/KR102790443B1/ko
Priority to CN201980066550.4A priority patent/CN112823421B/zh
Priority to JP2023212818A priority patent/JP7617236B2/ja
Priority to US18/900,266 priority patent/US20250022910A1/en
Priority to JP2025000067A priority patent/JP7829745B2/ja
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/01—Manufacture or treatment
    • H10H29/011—Manufacture or treatment of integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/032—Manufacture or treatment of electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8316—Multi-layer electrodes comprising at least one discontinuous layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/01—Manufacture or treatment
    • H10H29/032—Manufacture or treatment of electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/01—Manufacture or treatment
    • H10H29/036—Manufacture or treatment of packages
    • H10H29/0364—Manufacture or treatment of packages of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/80—Constructional details
    • H10H29/832—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/80—Constructional details
    • H10H29/85—Packages
    • H10H29/857—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
GBGB1816455.8A 2018-10-09 2018-10-09 LED Arrays Ceased GB201816455D0 (en)

Priority Applications (12)

Application Number Priority Date Filing Date Title
GBGB1816455.8A GB201816455D0 (en) 2018-10-09 2018-10-09 LED Arrays
CN201980066550.4A CN112823421B (zh) 2018-10-09 2019-10-08 Led阵列
JP2021519576A JP7407181B2 (ja) 2018-10-09 2019-10-08 Ｌｅｄアレイ
KR1020257010201A KR20250050979A (ko) 2018-10-09 2019-10-08 Led 어레이
EP19787394.6A EP3864699A1 (en) 2018-10-09 2019-10-08 Led arrays
US17/250,997 US20210335884A1 (en) 2018-10-09 2019-10-08 Led arrays
CN202511004658.4A CN121038476A (zh) 2018-10-09 2019-10-08 Led阵列
PCT/GB2019/052843 WO2020074875A1 (en) 2018-10-09 2019-10-08 LED Arrays
KR1020217013348A KR102790443B1 (ko) 2018-10-09 2019-10-08 Led 어레이
JP2023212818A JP7617236B2 (ja) 2018-10-09 2023-12-18 Ｌｅｄアレイ
US18/900,266 US20250022910A1 (en) 2018-10-09 2024-09-27 Semiconductor structures grown on hetero-interface without etch damage
JP2025000067A JP7829745B2 (ja) 2018-10-09 2025-01-06 Ｌｅｄアレイ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB1816455.8A GB201816455D0 (en) 2018-10-09 2018-10-09 LED Arrays

Publications (1)

Publication Number Publication Date
GB201816455D0 true GB201816455D0 (en) 2018-11-28

Family

ID=64394978

Family Applications (1)

Application Number Title Priority Date Filing Date
GBGB1816455.8A Ceased GB201816455D0 (en) 2018-10-09 2018-10-09 LED Arrays

Country Status (7)

Country Link
US (2) US20210335884A1 (https=)
EP (1) EP3864699A1 (https=)
JP (3) JP7407181B2 (https=)
KR (2) KR102790443B1 (https=)
CN (2) CN121038476A (https=)
GB (1) GB201816455D0 (https=)
WO (1) WO2020074875A1 (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB201910348D0 (en) 2019-07-19 2019-09-04 Univ Sheffield LED Arrays
WO2021102013A1 (en) * 2019-11-18 2021-05-27 Avicenatech Corp. High speed and multi-contact leds for data communication
FR3112026B1 (fr) * 2020-06-30 2022-09-23 Aledia Dispositif optoélectronique et procédé de fabrication
CN111864024A (zh) * 2020-07-24 2020-10-30 武汉大学 一种选区外延生长Micro-LED芯片及其制备方法
JP7591785B2 (ja) * 2020-12-25 2024-11-29 セイコーエプソン株式会社 発光装置の製造方法
WO2022203655A1 (en) * 2021-03-23 2022-09-29 Google Llc Baseline and shaped pulse driving for micro-light emitting diode display
DE102021134107A1 (de) 2021-12-21 2023-06-22 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zum herstellen von mikro-halbleiter-leuchtdioden-strukturen und halbleiter-leuchtdiode
CN118867079A (zh) * 2023-04-27 2024-10-29 苏州晶湛半导体有限公司 一种半导体结构及其制作方法
US12446385B2 (en) * 2023-11-03 2025-10-14 Snap Inc. Monolithic RGB microLED array
CN119050125B (zh) * 2024-08-21 2025-08-26 西安电子科技大学广州研究院 一种多种颜色led阵列及其制备方法

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3744211B2 (ja) * 1997-09-01 2006-02-08 日亜化学工業株式会社 窒化物半導体素子
US6329676B1 (en) * 1999-03-01 2001-12-11 Toru Takayama Flat panel solid state light source
JP3702700B2 (ja) * 1999-03-31 2005-10-05 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体素子及びその製造方法
JP4651161B2 (ja) * 2000-07-03 2011-03-16 宣彦 澤木 半導体素子およびその製造方法
JP2003142728A (ja) * 2001-11-02 2003-05-16 Sharp Corp 半導体発光素子の製造方法
EP1652238B1 (en) * 2003-08-08 2010-10-27 Kang, Sang-kyu Nitride micro light emitting diode with high brightness and method of manufacturing the same
JP4920298B2 (ja) * 2005-04-28 2012-04-18 シャープ株式会社 半導体発光デバイスおよび半導体デバイスの製造方法
JP4525500B2 (ja) * 2005-07-14 2010-08-18 パナソニック電工株式会社 半導体発光素子およびそれを用いる照明装置ならびに半導体発光素子の製造方法
KR100869962B1 (ko) * 2006-12-07 2008-11-24 한국전자통신연구원 전류 확산층을 포함하는 발광소자의 제조방법
JP2009071220A (ja) * 2007-09-18 2009-04-02 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子
KR100956499B1 (ko) * 2008-08-01 2010-05-07 주식회사 실트론 금속층을 가지는 화합물 반도체 기판, 그 제조 방법 및이를 이용한 화합물 반도체 소자
TWI392118B (zh) * 2008-12-04 2013-04-01 Huga Optotech Inc 發光二極體之製造方法及發光二極體
JP4586935B2 (ja) * 2010-03-17 2010-11-24 パナソニック電工株式会社 半導体発光素子の製造方法
JP2011258631A (ja) * 2010-06-07 2011-12-22 Panasonic Corp 発光ダイオード素子およびその製造方法
CN102709410B (zh) 2012-06-04 2014-08-27 中国科学院半导体研究所 纳米柱发光二极管的制作方法
KR101898679B1 (ko) * 2012-12-14 2018-10-04 삼성전자주식회사 나노구조 발광소자
KR102022266B1 (ko) * 2013-01-29 2019-09-18 삼성전자주식회사 나노구조 반도체 발광소자 제조방법
US20150137072A1 (en) * 2013-11-19 2015-05-21 Gwangju Institute Of Science And Technology Mask for forming semiconductor layer, semiconductor device, and method of fabricating the same
KR101452801B1 (ko) * 2014-03-25 2014-10-22 광주과학기술원 발광다이오드 및 이의 제조방법
KR20160027610A (ko) 2014-09-01 2016-03-10 삼성전자주식회사 나노구조 반도체 발광소자
US9620559B2 (en) * 2014-09-26 2017-04-11 Glo Ab Monolithic image chip for near-to-eye display
WO2017096032A1 (en) * 2015-12-04 2017-06-08 Quora Technology, Inc. Wide band gap device integrated circuit architecture on engineered substrate
KR101837623B1 (ko) * 2015-12-21 2018-03-13 (재)한국나노기술원 질화물 반도체 발광소자 및 그 제조방법
GB201705755D0 (en) * 2017-04-10 2017-05-24 Norwegian Univ Of Science And Tech (Ntnu) Nanostructure
CN207183308U (zh) * 2017-09-21 2018-04-03 山西飞虹微纳米光电科技有限公司 基于GaN基轴向纳米棒阵列的LED
CN107833878B (zh) 2017-11-29 2019-06-14 北京工业大学 一种全色堆栈式外延的Micro-LED倒装阵列制备方法
FR3080487B1 (fr) * 2018-04-20 2020-06-12 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de fabrication d’un dispositif optoelectronique a matrice de diodes
CN111864024A (zh) 2020-07-24 2020-10-30 武汉大学 一种选区外延生长Micro-LED芯片及其制备方法

Also Published As

Publication number Publication date
JP7617236B2 (ja) 2025-01-17
JP2024026392A (ja) 2024-02-28
EP3864699A1 (en) 2021-08-18
JP7407181B2 (ja) 2023-12-28
JP2025060989A (ja) 2025-04-10
JP7829745B2 (ja) 2026-03-13
CN112823421B (zh) 2025-08-08
KR102790443B1 (ko) 2025-04-01
WO2020074875A1 (en) 2020-04-16
KR20250050979A (ko) 2025-04-15
JP2022504524A (ja) 2022-01-13
US20210335884A1 (en) 2021-10-28
CN112823421A (zh) 2021-05-18
KR20210069101A (ko) 2021-06-10
US20250022910A1 (en) 2025-01-16
CN121038476A (zh) 2025-11-28

Similar Documents

Publication Publication Date Title
GB201816455D0 (en) LED Arrays
GB201910352D0 (en) LED Arrays
PL3575617T3 (pl) Zestaw mocujący
CA196038S (en) Luminaire
CA195877S (en) Luminaire
HUE052788T2 (hu) LED lámpaberendezés
PT3858112T (pt) Acionador de luminária melhorado
PL3534059T3 (pl) Oprawa oświetleniowa
GB201910348D0 (en) LED Arrays
PT3537029T (pt) Luminária tipo lanterna melhorada
CA184427S (en) Luminaire structure
ZAA201801812S (en) Candle
PL3369986T3 (pl) Oprawa oświetleniowa
CA191194S (en) Luminaire
GB201820987D0 (en) Photodiode arrays
ZAA201801813S (en) Candle
GB2559635B (en) Luminaire
GB2577474B (en) Illumination
GB2590433B (en) Luminaire
CA189511S (en) Luminaire
GB2570174B (en) Lighting unit
PL3616997T3 (pl) Układ
GB201714109D0 (en) Led
EP3853645C0 (en) LAMP
CA191195S (en) Luminaire

Legal Events

Date Code Title Description
AT Applications terminated before publication under section 16(1)