JP7407181B2 - Ｌｅｄアレイ - Google Patents

Ｌｅｄアレイ Download PDF

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Publication number
JP7407181B2
JP7407181B2 JP2021519576A JP2021519576A JP7407181B2 JP 7407181 B2 JP7407181 B2 JP 7407181B2 JP 2021519576 A JP2021519576 A JP 2021519576A JP 2021519576 A JP2021519576 A JP 2021519576A JP 7407181 B2 JP7407181 B2 JP 7407181B2
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layer
led
array
semiconductor layer
holes
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JP2022504524A5 (https=
JP2022504524A (ja
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ワーン，タオ
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スナップ・インコーポレーテッド
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Priority to JP2023212818A priority Critical patent/JP7617236B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/01—Manufacture or treatment
    • H10H29/011—Manufacture or treatment of integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/032—Manufacture or treatment of electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8316—Multi-layer electrodes comprising at least one discontinuous layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/01—Manufacture or treatment
    • H10H29/032—Manufacture or treatment of electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/01—Manufacture or treatment
    • H10H29/036—Manufacture or treatment of packages
    • H10H29/0364—Manufacture or treatment of packages of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/80—Constructional details
    • H10H29/832—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/80—Constructional details
    • H10H29/85—Packages
    • H10H29/857—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies

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  • Led Devices (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Recrystallisation Techniques (AREA)
JP2021519576A 2018-10-09 2019-10-08 Ｌｅｄアレイ Active JP7407181B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2023212818A JP7617236B2 (ja) 2018-10-09 2023-12-18 Ｌｅｄアレイ
JP2025000067A JP7829745B2 (ja) 2018-10-09 2025-01-06 Ｌｅｄアレイ

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB1816455.8 2018-10-09
GBGB1816455.8A GB201816455D0 (en) 2018-10-09 2018-10-09 LED Arrays
PCT/GB2019/052843 WO2020074875A1 (en) 2018-10-09 2019-10-08 LED Arrays

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2023212818A Division JP7617236B2 (ja) 2018-10-09 2023-12-18 Ｌｅｄアレイ

Publications (3)

Publication Number Publication Date
JP2022504524A JP2022504524A (ja) 2022-01-13
JP2022504524A5 JP2022504524A5 (https=) 2022-10-17
JP7407181B2 true JP7407181B2 (ja) 2023-12-28

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JP2021519576A Active JP7407181B2 (ja) 2018-10-09 2019-10-08 Ｌｅｄアレイ
JP2023212818A Active JP7617236B2 (ja) 2018-10-09 2023-12-18 Ｌｅｄアレイ
JP2025000067A Active JP7829745B2 (ja) 2018-10-09 2025-01-06 Ｌｅｄアレイ

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JP2025000067A Active JP7829745B2 (ja) 2018-10-09 2025-01-06 Ｌｅｄアレイ

Country Status (7)

Country Link
US (2) US20210335884A1 (https=)
EP (1) EP3864699A1 (https=)
JP (3) JP7407181B2 (https=)
KR (2) KR102790443B1 (https=)
CN (2) CN121038476A (https=)
GB (1) GB201816455D0 (https=)
WO (1) WO2020074875A1 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12426426B2 (en) 2019-07-19 2025-09-23 Snap Inc. Arrays of LED structures extending through holes in a dielectric layer and independently activated
US12446385B2 (en) 2023-11-03 2025-10-14 Snap Inc. Monolithic RGB microLED array

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* Cited by examiner, † Cited by third party
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WO2021102013A1 (en) * 2019-11-18 2021-05-27 Avicenatech Corp. High speed and multi-contact leds for data communication
FR3112026B1 (fr) * 2020-06-30 2022-09-23 Aledia Dispositif optoélectronique et procédé de fabrication
CN111864024A (zh) * 2020-07-24 2020-10-30 武汉大学 一种选区外延生长Micro-LED芯片及其制备方法
JP7591785B2 (ja) * 2020-12-25 2024-11-29 セイコーエプソン株式会社 発光装置の製造方法
WO2022203655A1 (en) * 2021-03-23 2022-09-29 Google Llc Baseline and shaped pulse driving for micro-light emitting diode display
DE102021134107A1 (de) 2021-12-21 2023-06-22 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zum herstellen von mikro-halbleiter-leuchtdioden-strukturen und halbleiter-leuchtdiode
CN118867079A (zh) * 2023-04-27 2024-10-29 苏州晶湛半导体有限公司 一种半导体结构及其制作方法
CN119050125B (zh) * 2024-08-21 2025-08-26 西安电子科技大学广州研究院 一种多种颜色led阵列及其制备方法

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JP2009071220A (ja) 2007-09-18 2009-04-02 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子
JP2010135859A (ja) 2010-03-17 2010-06-17 Panasonic Electric Works Co Ltd 半導体発光素子の製造方法
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CN111864024A (zh) 2020-07-24 2020-10-30 武汉大学 一种选区外延生长Micro-LED芯片及其制备方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002026387A (ja) 2000-07-03 2002-01-25 Nobuhiko Sawaki 半導体素子およびその製造方法
JP2009071220A (ja) 2007-09-18 2009-04-02 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子
JP2010135859A (ja) 2010-03-17 2010-06-17 Panasonic Electric Works Co Ltd 半導体発光素子の製造方法
JP2011258631A (ja) 2010-06-07 2011-12-22 Panasonic Corp 発光ダイオード素子およびその製造方法
CN102709410A (zh) 2012-06-04 2012-10-03 中国科学院半导体研究所 纳米柱发光二极管的制作方法
US20140166974A1 (en) 2012-12-14 2014-06-19 Samsung Electronics Co., Ltd. Nano-structured light-emitting devices
US20140246647A1 (en) 2013-01-29 2014-09-04 Samsung Electronics Co., Ltd. Nanostructure light emitting device and method of manufacturing the same
US20160064607A1 (en) 2014-09-01 2016-03-03 Samsung Electronics Co., Ltd. Nanostructure semiconductor light emitting device
WO2016049507A1 (en) 2014-09-26 2016-03-31 Glo Ab Monolithic image chip for near-to-eye display
CN107833878A (zh) 2017-11-29 2018-03-23 北京工业大学 一种全色堆栈式外延的Micro‑LED倒装阵列制备方法
CN111864024A (zh) 2020-07-24 2020-10-30 武汉大学 一种选区外延生长Micro-LED芯片及其制备方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12426426B2 (en) 2019-07-19 2025-09-23 Snap Inc. Arrays of LED structures extending through holes in a dielectric layer and independently activated
US12446385B2 (en) 2023-11-03 2025-10-14 Snap Inc. Monolithic RGB microLED array

Also Published As

Publication number Publication date
JP7617236B2 (ja) 2025-01-17
JP2024026392A (ja) 2024-02-28
EP3864699A1 (en) 2021-08-18
JP2025060989A (ja) 2025-04-10
GB201816455D0 (en) 2018-11-28
JP7829745B2 (ja) 2026-03-13
CN112823421B (zh) 2025-08-08
KR102790443B1 (ko) 2025-04-01
WO2020074875A1 (en) 2020-04-16
KR20250050979A (ko) 2025-04-15
JP2022504524A (ja) 2022-01-13
US20210335884A1 (en) 2021-10-28
CN112823421A (zh) 2021-05-18
KR20210069101A (ko) 2021-06-10
US20250022910A1 (en) 2025-01-16
CN121038476A (zh) 2025-11-28

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