CN100397559C - 具有图案式表面的iii族元素氮化物层 - Google Patents

具有图案式表面的iii族元素氮化物层 Download PDF

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Publication number
CN100397559C
CN100397559C CNB2004100304925A CN200410030492A CN100397559C CN 100397559 C CN100397559 C CN 100397559C CN B2004100304925 A CNB2004100304925 A CN B2004100304925A CN 200410030492 A CN200410030492 A CN 200410030492A CN 100397559 C CN100397559 C CN 100397559C
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China
Prior art keywords
layer
group iii
substrate
nitride
iii nitride
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Expired - Fee Related
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CNB2004100304925A
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English (en)
Chinese (zh)
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CN1532890A (zh
Inventor
阿里夫·乔杜里
黄福明
理查特·埃利奥特·斯拉歇尔
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Nokia of America Corp
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Lucent Technologies Inc
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    • D—TEXTILES; PAPER
    • D06—TREATMENT OF TEXTILES OR THE LIKE; LAUNDERING; FLEXIBLE MATERIALS NOT OTHERWISE PROVIDED FOR
    • D06Q—DECORATING TEXTILES
    • D06Q1/00—Decorating textiles
    • D06Q1/10—Decorating textiles by treatment with, or fixation of, a particulate material, e.g. mica, glass beads
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B1/00—Devices without movable or flexible elements, e.g. microcapillary devices
    • D—TEXTILES; PAPER
    • D04—BRAIDING; LACE-MAKING; KNITTING; TRIMMINGS; NON-WOVEN FABRICS
    • D04D—TRIMMINGS; RIBBONS, TAPES OR BANDS, NOT OTHERWISE PROVIDED FOR
    • D04D9/00—Ribbons, tapes, welts, bands, beadings, or other decorative or ornamental strips, not otherwise provided for
    • D—TEXTILES; PAPER
    • D06—TREATMENT OF TEXTILES OR THE LIKE; LAUNDERING; FLEXIBLE MATERIALS NOT OTHERWISE PROVIDED FOR
    • D06Q—DECORATING TEXTILES
    • D06Q1/00—Decorating textiles
    • D06Q1/12—Decorating textiles by transferring a chemical agent or a metallic or non-metallic material in particulate or other form, from a solid temporary carrier to the textile
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • G02B6/1225—Basic optical elements, e.g. light-guiding paths comprising photonic band-gap structures or photonic lattices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J3/00—Details of electron-optical or ion-optical arrangements common to two or more basic types of discharge tubes or lamps
    • H01J3/02—Electron guns
    • H01J3/021—Electron guns using a field emission, photo emission, or secondary emission electron source
    • H01J3/022—Electron guns using a field emission, photo emission, or secondary emission electron source with microengineered cathode, e.g. Spindt-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • H10P50/646—Chemical etching of Group III-V materials
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12035—Materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/27—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials
    • H10P14/271—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials characterised by the preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3416—Nitrides

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nanotechnology (AREA)
  • Textile Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Led Devices (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Weting (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
CNB2004100304925A 2003-03-26 2004-03-25 具有图案式表面的iii族元素氮化物层 Expired - Fee Related CN100397559C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/397,799 US6986693B2 (en) 2003-03-26 2003-03-26 Group III-nitride layers with patterned surfaces
US10/397,799 2003-03-26

Related Child Applications (1)

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CN2008100949590A Division CN101261936B (zh) 2003-03-26 2004-03-25 具有图案式表面的ⅲ族元素氮化物层

Publications (2)

Publication Number Publication Date
CN1532890A CN1532890A (zh) 2004-09-29
CN100397559C true CN100397559C (zh) 2008-06-25

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CNB2004100304925A Expired - Fee Related CN100397559C (zh) 2003-03-26 2004-03-25 具有图案式表面的iii族元素氮化物层
CN2008100949590A Expired - Fee Related CN101261936B (zh) 2003-03-26 2004-03-25 具有图案式表面的ⅲ族元素氮化物层

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Country Link
US (6) US6986693B2 (https=)
EP (3) EP3035372A1 (https=)
JP (2) JP4790226B2 (https=)
KR (1) KR101050676B1 (https=)
CN (2) CN100397559C (https=)
DE (1) DE602004006043T2 (https=)

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KR100492482B1 (ko) * 2002-09-04 2005-06-03 한국과학기술연구원 Ｐｅｍｂｅ로 제조된 상온 자성반도체 및 그 소자
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US6960526B1 (en) * 2003-10-10 2005-11-01 The United States Of America As Represented By The Secretary Of The Army Method of fabricating sub-100 nanometer field emitter tips comprising group III-nitride semiconductors
US7276423B2 (en) * 2003-12-05 2007-10-02 International Rectifier Corporation III-nitride device and method with variable epitaxial growth direction
EP1741144A1 (de) * 2004-04-29 2007-01-10 Osram Opto Semiconductors GmbH Verfahren zum herstellen eines strahlungsemittierenden halbleiterchips
US20050244159A1 (en) * 2004-04-30 2005-11-03 Aref Chowdhury Optical wavelength-conversion
KR101041843B1 (ko) * 2005-07-30 2011-06-17 삼성엘이디 주식회사 질화물계 화합물 반도체 발광소자 및 그 제조방법
US7952109B2 (en) * 2006-07-10 2011-05-31 Alcatel-Lucent Usa Inc. Light-emitting crystal structures
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US8507304B2 (en) * 2009-07-17 2013-08-13 Applied Materials, Inc. Method of forming a group III-nitride crystalline film on a patterned substrate by hydride vapor phase epitaxy (HVPE)
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CN105870006A (zh) * 2016-06-08 2016-08-17 江苏新广联半导体有限公司 GaN基材料的侧壁加工工艺
CN106531614A (zh) * 2016-09-29 2017-03-22 北京科技大学 一种在蓝宝石衬底上生长具有不同极性GaN结构的方法
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Also Published As

Publication number Publication date
CN1532890A (zh) 2004-09-29
CN101261936A (zh) 2008-09-10
JP5721545B2 (ja) 2015-05-20
EP1780748B1 (en) 2016-09-21
US20050269593A1 (en) 2005-12-08
EP1467404A3 (en) 2004-10-20
EP1780748A1 (en) 2007-05-02
KR20040084666A (ko) 2004-10-06
EP1467404A2 (en) 2004-10-13
US20090139957A1 (en) 2009-06-04
EP3035372A1 (en) 2016-06-22
KR101050676B1 (ko) 2011-07-21
US6986693B2 (en) 2006-01-17
CN101261936B (zh) 2010-10-13
JP2011233531A (ja) 2011-11-17
US7468578B2 (en) 2008-12-23
USRE47767E1 (en) 2019-12-17
US20060220525A1 (en) 2006-10-05
US8070966B2 (en) 2011-12-06
US20120028448A1 (en) 2012-02-02
US20040189173A1 (en) 2004-09-30
US8613860B2 (en) 2013-12-24
DE602004006043D1 (de) 2007-06-06
US7084563B2 (en) 2006-08-01
EP1467404B1 (en) 2007-04-25
JP2004297070A (ja) 2004-10-21
DE602004006043T2 (de) 2007-12-27
JP4790226B2 (ja) 2011-10-12

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