DE602004006043D1 - Gruppe III-Nitridschichten mit strukturierten Oberflächen - Google Patents

Gruppe III-Nitridschichten mit strukturierten Oberflächen

Info

Publication number
DE602004006043D1
DE602004006043D1 DE602004006043T DE602004006043T DE602004006043D1 DE 602004006043 D1 DE602004006043 D1 DE 602004006043D1 DE 602004006043 T DE602004006043 T DE 602004006043T DE 602004006043 T DE602004006043 T DE 602004006043T DE 602004006043 D1 DE602004006043 D1 DE 602004006043D1
Authority
DE
Germany
Prior art keywords
group iii
iii nitride
nitride layers
structured surfaces
structured
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE602004006043T
Other languages
English (en)
Other versions
DE602004006043T2 (de
Inventor
Aref Chowdhury
Hock Min Ng
Richard Elliott Slusher
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nokia of America Corp
Original Assignee
Lucent Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lucent Technologies Inc filed Critical Lucent Technologies Inc
Publication of DE602004006043D1 publication Critical patent/DE602004006043D1/de
Application granted granted Critical
Publication of DE602004006043T2 publication Critical patent/DE602004006043T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • D—TEXTILES; PAPER
    • D06—TREATMENT OF TEXTILES OR THE LIKE; LAUNDERING; FLEXIBLE MATERIALS NOT OTHERWISE PROVIDED FOR
    • D06Q—DECORATING TEXTILES
    • D06Q1/00—Decorating textiles
    • D06Q1/10—Decorating textiles by treatment with, or fixation of, a particulate material, e.g. mica, glass beads
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B1/00—Devices without movable or flexible elements, e.g. microcapillary devices
    • D—TEXTILES; PAPER
    • D04—BRAIDING; LACE-MAKING; KNITTING; TRIMMINGS; NON-WOVEN FABRICS
    • D04D—TRIMMINGS; RIBBONS, TAPES OR BANDS, NOT OTHERWISE PROVIDED FOR
    • D04D9/00—Ribbons, tapes, welts, bands, beadings, or other decorative or ornamental strips, not otherwise provided for
    • D—TEXTILES; PAPER
    • D06—TREATMENT OF TEXTILES OR THE LIKE; LAUNDERING; FLEXIBLE MATERIALS NOT OTHERWISE PROVIDED FOR
    • D06Q—DECORATING TEXTILES
    • D06Q1/00—Decorating textiles
    • D06Q1/12—Decorating textiles by transferring a chemical agent or a metallic or non-metallic material in particulate or other form, from a solid temporary carrier to the textile
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • G02B6/1225—Basic optical elements, e.g. light-guiding paths comprising photonic band-gap structures or photonic lattices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J3/00—Details of electron-optical or ion-optical arrangements or of ion traps common to two or more basic types of discharge tubes or lamps
    • H01J3/02—Electron guns
    • H01J3/021—Electron guns using a field emission, photo emission, or secondary emission electron source
    • H01J3/022—Electron guns using a field emission, photo emission, or secondary emission electron source with microengineered cathode, e.g. Spindt-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30612—Etching of AIIIBV compounds
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12035—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Computer Hardware Design (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Textile Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Biophysics (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Weting (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
DE602004006043T 2003-03-26 2004-02-24 Gruppe III-Nitridschichten mit strukturierten Oberflächen Expired - Lifetime DE602004006043T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/397,799 US6986693B2 (en) 2003-03-26 2003-03-26 Group III-nitride layers with patterned surfaces
US397799 2003-03-26

Publications (2)

Publication Number Publication Date
DE602004006043D1 true DE602004006043D1 (de) 2007-06-06
DE602004006043T2 DE602004006043T2 (de) 2007-12-27

Family

ID=32869148

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602004006043T Expired - Lifetime DE602004006043T2 (de) 2003-03-26 2004-02-24 Gruppe III-Nitridschichten mit strukturierten Oberflächen

Country Status (6)

Country Link
US (6) US6986693B2 (de)
EP (3) EP1780748B1 (de)
JP (2) JP4790226B2 (de)
KR (1) KR101050676B1 (de)
CN (2) CN101261936B (de)
DE (1) DE602004006043T2 (de)

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US6960526B1 (en) * 2003-10-10 2005-11-01 The United States Of America As Represented By The Secretary Of The Army Method of fabricating sub-100 nanometer field emitter tips comprising group III-nitride semiconductors
US7276423B2 (en) * 2003-12-05 2007-10-02 International Rectifier Corporation III-nitride device and method with variable epitaxial growth direction
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Also Published As

Publication number Publication date
KR20040084666A (ko) 2004-10-06
CN1532890A (zh) 2004-09-29
US7084563B2 (en) 2006-08-01
US8070966B2 (en) 2011-12-06
US20120028448A1 (en) 2012-02-02
EP1467404B1 (de) 2007-04-25
US6986693B2 (en) 2006-01-17
JP5721545B2 (ja) 2015-05-20
JP2011233531A (ja) 2011-11-17
US7468578B2 (en) 2008-12-23
DE602004006043T2 (de) 2007-12-27
US20060220525A1 (en) 2006-10-05
EP1467404A2 (de) 2004-10-13
USRE47767E1 (en) 2019-12-17
US8613860B2 (en) 2013-12-24
JP2004297070A (ja) 2004-10-21
KR101050676B1 (ko) 2011-07-21
EP3035372A1 (de) 2016-06-22
US20050269593A1 (en) 2005-12-08
EP1780748B1 (de) 2016-09-21
CN101261936A (zh) 2008-09-10
CN100397559C (zh) 2008-06-25
US20040189173A1 (en) 2004-09-30
EP1467404A3 (de) 2004-10-20
US20090139957A1 (en) 2009-06-04
JP4790226B2 (ja) 2011-10-12
EP1780748A1 (de) 2007-05-02
CN101261936B (zh) 2010-10-13

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