JP2006228730A5 - - Google Patents

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Publication number
JP2006228730A5
JP2006228730A5 JP2006035891A JP2006035891A JP2006228730A5 JP 2006228730 A5 JP2006228730 A5 JP 2006228730A5 JP 2006035891 A JP2006035891 A JP 2006035891A JP 2006035891 A JP2006035891 A JP 2006035891A JP 2006228730 A5 JP2006228730 A5 JP 2006228730A5
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JP
Japan
Prior art keywords
emitter
silicon
substrate
tip
silicon substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2006035891A
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English (en)
Japanese (ja)
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JP2006228730A (ja
JP5153075B2 (ja
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Publication date
Priority claimed from US11/057,690 external-priority patent/US7564178B2/en
Application filed filed Critical
Publication of JP2006228730A publication Critical patent/JP2006228730A/ja
Publication of JP2006228730A5 publication Critical patent/JP2006228730A5/ja
Application granted granted Critical
Publication of JP5153075B2 publication Critical patent/JP5153075B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2006035891A 2005-02-14 2006-02-14 高密度電界放出素子および前記放出素子を形成するための方法 Expired - Fee Related JP5153075B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/057,690 US7564178B2 (en) 2005-02-14 2005-02-14 High-density field emission elements and a method for forming said emission elements
US11/057690 2005-02-14

Publications (3)

Publication Number Publication Date
JP2006228730A JP2006228730A (ja) 2006-08-31
JP2006228730A5 true JP2006228730A5 (https=) 2009-03-05
JP5153075B2 JP5153075B2 (ja) 2013-02-27

Family

ID=36814985

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006035891A Expired - Fee Related JP5153075B2 (ja) 2005-02-14 2006-02-14 高密度電界放出素子および前記放出素子を形成するための方法

Country Status (3)

Country Link
US (2) US7564178B2 (https=)
JP (1) JP5153075B2 (https=)
KR (1) KR101184202B1 (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7564178B2 (en) * 2005-02-14 2009-07-21 Agere Systems Inc. High-density field emission elements and a method for forming said emission elements
FR2899572B1 (fr) * 2006-04-05 2008-09-05 Commissariat Energie Atomique Protection de cavites debouchant sur une face d'un element microstructure
CA2705542A1 (en) * 2007-11-13 2009-05-22 Sapphire Energy, Inc. Production of fc-fusion polypeptides in eukaryotic algae
TW200942489A (en) * 2008-04-08 2009-10-16 Univ Nat Taiwan Science Tech Nanopins producing method and nanopin arrays fabricated by utilizing the method
US9711392B2 (en) 2012-07-25 2017-07-18 Infineon Technologies Ag Field emission devices and methods of making thereof
EP2819165B1 (en) * 2013-06-26 2018-05-30 Nexperia B.V. Electric field gap device and manufacturing method
US11837435B2 (en) 2020-08-19 2023-12-05 Taiwan Semiconductor Manufacturing Co., Ltd. Atom probe tomography specimen preparation
CN113053917B (zh) * 2021-03-10 2022-08-23 武汉华星光电半导体显示技术有限公司 显示屏、阵列基板及其制造方法

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US3665241A (en) * 1970-07-13 1972-05-23 Stanford Research Inst Field ionizer and field emission cathode structures and methods of production
US3921022A (en) * 1974-09-03 1975-11-18 Rca Corp Field emitting device and method of making same
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FR2623013A1 (fr) * 1987-11-06 1989-05-12 Commissariat Energie Atomique Source d'electrons a cathodes emissives a micropointes et dispositif de visualisation par cathodoluminescence excitee par emission de champ,utilisant cette source
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US5534743A (en) * 1993-03-11 1996-07-09 Fed Corporation Field emission display devices, and field emission electron beam source and isolation structure components therefor
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US6171164B1 (en) * 1998-02-19 2001-01-09 Micron Technology, Inc. Method for forming uniform sharp tips for use in a field emission array
US6232705B1 (en) * 1998-09-01 2001-05-15 Micron Technology, Inc. Field emitter arrays with gate insulator and cathode formed from single layer of polysilicon
US6176752B1 (en) * 1998-09-10 2001-01-23 Micron Technology, Inc. Baseplate and a method for manufacturing a baseplate for a field emission display
JP3436219B2 (ja) * 1998-11-19 2003-08-11 日本電気株式会社 カーボン材料とその製造方法、及びそれを用いた電界放出型冷陰極
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