WO2019037324A1 - Oled显示面板及其制作方法 - Google Patents

Oled显示面板及其制作方法 Download PDF

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Publication number
WO2019037324A1
WO2019037324A1 PCT/CN2017/114459 CN2017114459W WO2019037324A1 WO 2019037324 A1 WO2019037324 A1 WO 2019037324A1 CN 2017114459 W CN2017114459 W CN 2017114459W WO 2019037324 A1 WO2019037324 A1 WO 2019037324A1
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Prior art keywords
oled
pixel
layer
backplane
display panel
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PCT/CN2017/114459
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English (en)
French (fr)
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唐甲
任章淳
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深圳市华星光电半导体显示技术有限公司
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Application filed by 深圳市华星光电半导体显示技术有限公司 filed Critical 深圳市华星光电半导体显示技术有限公司
Priority to EP17922223.7A priority Critical patent/EP3675199A4/en
Priority to JP2020504302A priority patent/JP2020528209A/ja
Priority to US16/641,260 priority patent/US20200357873A1/en
Priority to KR1020207008697A priority patent/KR20200040303A/ko
Publication of WO2019037324A1 publication Critical patent/WO2019037324A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/8791—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H10K59/8792—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. black layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/126—Shielding, e.g. light-blocking means over the TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/828—Transparent cathodes, e.g. comprising thin metal layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8052—Cathodes
    • H10K59/80524—Transparent cathodes, e.g. comprising thin metal layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/871—Self-supporting sealing arrangements
    • H10K59/8723—Vertical spacers, e.g. arranged between the sealing arrangement and the OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/302—Details of OLEDs of OLED structures
    • H10K2102/3023—Direction of light emission
    • H10K2102/3026—Top emission
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks

Definitions

  • the present invention relates to the field of display technologies, and in particular, to an OLED display panel and a method of fabricating the same.
  • OLED displays have self-illumination, low driving voltage, high luminous efficiency, short response time, high definition and contrast ratio, wide viewing angle, wide temperature range, flexible display and large area Color display and many other advantages, recognized by the industry as the most promising display device.
  • OLED products are mainly distributed in small-sized mobile phones, tablets (Pad) and larger-sized TV (TV) screens.
  • the OLED has an anode, an organic light emitting material layer, and a cathode which are sequentially formed on a substrate.
  • the cathode of the OLED adopts a thick metal layer, and the OLED display panel of the structure uses the light emitted by the organic light-emitting material layer. It is required to penetrate the flat layer (PLN) layer and the thin film transistor (TFT) layer underneath, thereby reducing the luminous efficiency. Therefore, as the resolution increases, the bottom emission type OLED is limited by the aperture ratio, and it is difficult to achieve high resolution. At the rate, more and more practitioners are turning to the development of top emission OLEDs to improve luminous efficiency and achieve high resolution display.
  • each pixel (pixel) of the OLED 11 is not only directed perpendicularly to the cap plate 20, but is similar to radiation in the OLED.
  • the light is emitted from the top of the backplane 10, and since the cover 20 and the OLED backplane 10 are not provided with an obstruction between the pixels, the light emitted by the OLED 11 of the pixel is easily generated in the region of another pixel.
  • the problem of light leakage from the side of the pixel, and the problem of color mixing between the pixels that is, the circle mark in the figure.
  • An object of the present invention is to provide an OLED display panel with a light shielding layer disposed between the OLED back plate and the package cover plate corresponding to the pixel spacing area, so that the light emitted by each of the top emission type OLEDs can be limited thereto.
  • the corresponding pixel emission thereby effectively avoiding the occurrence of pixel side leakage and color mixing problems.
  • Another object of the present invention is to provide a method for fabricating an OLED display panel by using A light shielding layer should be disposed between the OLED backplane and the package cover layer above the pixel spacing area, so that the light emitted by each of the top emission type OLEDs can be limited to be emitted in the corresponding pixel, thereby effectively avoiding the pixel lateral direction. Light leakage and color mixing problems occur.
  • the present invention provides an OLED display panel, including an opposite OLED backplane and a package cover, and a light shielding layer disposed on a side of the package cover adjacent to the OLED backplane;
  • the OLED backplane includes a TFT array substrate and a plurality of top emission OLEDs arranged in an array on the TFT array substrate;
  • the OLED backplane has a pixel spacing area and a plurality of pixel light emitting areas respectively corresponding to the plurality of top emission type OLEDs separated by the pixel spacing area;
  • the ray shielding layer is located between the OLED backplane and the package cover and corresponds to a pixel spacing area of the OLED backplane.
  • the light shielding layer is an organic photoresist material or an inorganic material.
  • Each of the top emission type OLEDs includes an anode, an organic light emitting material layer, and a transparent cathode which are sequentially stacked on the TFT array substrate from bottom to top.
  • the OLED backplane further includes a pixel defining layer disposed on the TFT array substrate and the anode, the pixel defining layer having a via hole exposing a portion of the anode, and the organic light emitting material layer of each of the top emitting OLEDs is correspondingly disposed on a region of the OLED backplane corresponding to the pixel defining layer is a pixel spacing region, and a region corresponding to the via hole is a pixel light emitting region;
  • the ray shielding layer is correspondingly disposed above the pixel defining layer.
  • the material of the organic luminescent material layer is an organic evaporation material or an inkjet printing material.
  • the invention also provides a method for manufacturing an OLED display panel, comprising the following steps:
  • Step S1 providing a TFT substrate, forming a plurality of top-emission OLEDs arranged in an array on the TFT substrate, and obtaining an OLED backplane; the OLED backplane having pixel spacing regions and spaced apart by the pixel spacing regions a plurality of pixel light emitting regions corresponding to the plurality of top emission type OLEDs;
  • Step S2 providing a package cover, and forming a light shielding layer on the package cover corresponding to the pixel spacing area of the OLED backplane;
  • Step S3 the light shielding layer formed on the package cover is oriented toward the OLED backplane, and the package cover and the OLED backplane are packaged, so that the light shielding layer corresponds to the OLED back.
  • the light shielding layer is an organic photoresist material, and the light shielding layer is specifically prepared by a yellow light process;
  • the light shielding layer is an inorganic material, and the light shielding layer is specifically formed by sequentially Film process, yellow light process and etching process are prepared;
  • the yellow light process comprises a photoresist coating step, an exposure step and a development step which are sequentially performed;
  • the film forming process adopts a chemical vapor deposition process or a physical vapor deposition process
  • the etching process uses a dry etching process or a wet etching process.
  • each of the top emission type OLEDs includes an anode, an organic light emitting material layer and a transparent cathode which are sequentially stacked on the TFT array substrate from bottom to top.
  • the step S1 further includes forming a pixel defining layer on the TFT array substrate and the anode, the pixel defining layer having a via hole exposing a portion of the anode, and the organic light emitting material layer of each of the top emitting OLEDs is correspondingly disposed on Inside the via hole;
  • the area of the OLED backplane corresponding to the pixel defining layer is a pixel spacing area, and the area corresponding to the via hole is a pixel lighting area;
  • the ray shielding layer is correspondingly disposed above the pixel defining layer.
  • the material of the organic luminescent material layer is an organic evaporation material, and the organic luminescent material layer is formed by an evaporation process;
  • the material of the organic luminescent material layer is an inkjet printing material, and the organic luminescent material layer is formed by an inkjet printing process.
  • the present invention further provides an OLED display panel, including an opposite OLED backplane and a package cover, and a light shielding layer disposed on a side of the package cover adjacent to the OLED backplane;
  • the OLED backplane includes a TFT array substrate and a plurality of top emission OLEDs arranged in an array on the TFT array substrate;
  • the OLED backplane has a pixel spacing area and a plurality of pixel light emitting areas respectively corresponding to the plurality of top emission type OLEDs separated by the pixel spacing area;
  • the light shielding layer is located between the OLED backplane and the package cover plate and correspondingly abuts against a pixel spacing area of the OLED backplane;
  • the light shielding layer is an organic photoresist material or an inorganic material
  • Each of the top emission type OLEDs includes an anode, an organic light emitting material layer and a transparent cathode which are sequentially stacked on the TFT array substrate from bottom to top;
  • the OLED backplane further includes a pixel defining layer disposed on the TFT array substrate and the anode, wherein the pixel defining layer has a via hole exposing a portion of the anode, and the organic light emitting material layer of each of the top emitting OLEDs corresponds to Provided in one of the via holes;
  • the area of the OLED backplane corresponding to the pixel defining layer is a pixel spacing area, and the area corresponding to the via hole is a pixel lighting area;
  • the ray shielding layer is correspondingly disposed above the pixel defining layer
  • the material of the organic luminescent material layer is an organic evaporation material or an inkjet printing material.
  • the OLED display panel of the present invention has a light shielding layer disposed between the OLED back plate and the package cover plate corresponding to the pixel spacing area to block the lateral light leakage of the pixel, thereby
  • the light emitted by the top emission type OLED is limited to be emitted in the corresponding pixel, thereby effectively avoiding the problem of lateral light leakage and color mixing of the pixel.
  • the method for fabricating the OLED display panel of the present invention can block each side of the OLED backplane and the package cover layer to block the lateral light leakage of the pixel, so that each of the top emission type OLEDs can be shielded.
  • the emitted light is limited to be emitted in the corresponding pixel, thereby effectively avoiding the problem of lateral light leakage and color mixing of the pixel.
  • FIG. 1 is a schematic diagram of lateral light leakage and color mixing of a pixel in a conventional OLED display panel
  • FIG. 2 is a schematic structural view of an OLED display panel of the present invention.
  • FIG. 3 is a flow chart of a method for fabricating an OLED display panel of the present invention.
  • step S1 is a schematic diagram of step S1 of the method for fabricating an OLED display panel of the present invention.
  • FIG. 5 is a schematic diagram of step S2 of the method for fabricating an OLED display panel of the present invention.
  • the present invention firstly provides an OLED display panel, including an OLED backplane 100 and a package cover 200 disposed opposite to each other, and a side of the package cover 200 disposed adjacent to the OLED backplane 100. a light shielding layer 300 between the OLED backplane 100 and the package cover 200;
  • the OLED backplane 100 includes a TFT array substrate 110 and a plurality of top emission OLEDs 120 arranged in an array on the TFT array substrate 110;
  • the OLED backplane 100 has a pixel spacing area and a plurality of pixel light emitting areas respectively corresponding to the plurality of top emission type OLEDs 120 separated by the pixel spacing area;
  • the light shielding layer 300 is correspondingly disposed on the pixel spacing area of the OLED backplane 100, so that the light emitted by each of the top emission OLEDs 120 can be limited to be emitted in the corresponding pixel, and the lateral light leakage of the pixel is blocked. .
  • the light shielding layer 300 may be an organic photoresist material, for example, a polyimide (PI), a black matrix (BM) material, or another organic photoresist material having a low light transmittance.
  • PI polyimide
  • BM black matrix
  • the yellow light process specifically includes a photoresist coating step, an exposure step, and a development step. or,
  • the light shielding layer 300 can also be formed by using an inorganic material having a low light transmittance, which is specifically formed by a sequential film forming process, a yellow light process, and an etching process; wherein the film forming process is performed by chemical vapor deposition. (Chemical Vapor Deposition, CVD) process or Physical Vapor Deposition (PVD) process; the yellow light process includes a photoresist coating step, an exposure step, and a development step; the etching process is dry etching Process or wet etching process.
  • CVD Chemical Vapor Deposition
  • PVD Physical Vapor Deposition
  • the TFT array substrate 110 has a plurality of arrays of TFTs (not shown) for driving the top emission type OLED 120.
  • the type of the TFTs is not limited, and may be a low temperature polysilicon type (Low). Any type of TFT such as Temperature Poly-silicon, LTPS, Oxide, or Solid-Phase-Crystallization (SPC).
  • each of the top emission type OLEDs 120 includes an anode 121, an organic light emitting material layer 122, and a transparent cathode 123 which are sequentially stacked on the TFT array substrate 110 from bottom to top.
  • the OLED backplane 100 further includes a Pixel Definition Layer (PDL) 130 disposed on the TFT array substrate 110 and the anode 121, and the pixel defining layer 130 has a via 131 exposing a portion of the anode 121.
  • the organic light-emitting material layer 122 of each of the top emission type OLEDs 120 is disposed in the via hole 131 correspondingly.
  • the area of the OLED backplane 100 corresponding to the pixel defining layer 130 is a pixel spacing area
  • the area corresponding to the via hole 131 is a pixel lighting area.
  • the light shielding layer 300 is correspondingly disposed above the pixel defining layer 130.
  • the organic luminescent material layer 122 may be formed by an organic evaporation material, which is formed by an evaporation process, and the pixel defining layer 130 may be a conventional non-hydrophobic PDL material; or
  • the organic light-emitting material layer 122 may also be formed by an inkjet printing (IJP) material.
  • IJP inkjet printing
  • the organic light-emitting material layer 122 is formed by an inkjet printing process, and the pixel defining layer 130 needs to adopt a hydrophobic PDL. material.
  • the OLED display panel of the present invention has a light shielding layer 300 disposed between the OLED backplane 100 and the package cover 200 to block the lateral light leakage of the pixel.
  • the light emitted by each of the top emission type OLEDs 120 can be limited to be emitted in the corresponding pixels, thereby effectively avoiding the problem of lateral light leakage and color mixing of the pixels.
  • the present invention further provides a method for fabricating an OLED display panel, comprising the following steps:
  • Step S1 as shown in FIG. 4, a TFT substrate 110 is provided, and a plurality of top emission type OLEDs 120 arranged in an array are formed on the TFT substrate 110 to obtain an OLED backplane 100.
  • the OLED backplane 100 has pixel spacing regions. And a plurality of pixel light-emitting regions respectively corresponding to the plurality of top emission-type OLEDs 120, which are spaced apart by the pixel spacing region.
  • the TFT array substrate 110 has a plurality of arrays of TFTs for driving the top emission type OLED 120.
  • the type of the TFT is not limited, and may be a low temperature polysilicon type, an oxide type or a solid phase. Any type of TFT such as a crystallized type.
  • each of the top emission type OLEDs 120 includes an anode 121, an organic light emitting material layer 122, and a transparent cathode 123 which are sequentially stacked on the TFT array substrate 110 from bottom to top.
  • the step S1 further includes: before the organic light emitting material layer 122 of the plurality of top emission type OLEDs 120 is formed, a pixel defining layer 130 is formed on the TFT array substrate 110 and the anode 121, and the pixel defining layer 130 has a via 131 exposing a portion of the anode 121, and the organic light-emitting material layer 122 of each of the top-emission OLEDs 120 is disposed in the via 131; the OLED backplane 100 corresponds to the pixel defining layer
  • the area of 130 is a pixel spacing area, and the area corresponding to the via 131 is a pixel light emitting area.
  • the organic luminescent material layer 122 may be an organic evaporation material, and in the step S1, it is formed by an evaporation process, and the pixel defining layer 130 may be a conventional non-hydrophobic PDL material; or ,
  • the organic light emitting material layer 122 may also be an inkjet printing material.
  • the organic light emitting material layer 122 is formed by an inkjet printing process, and the pixel defining layer 130 needs to adopt a hydrophobic PDL material. .
  • Step S2 as shown in FIG. 5, a package cover 200 is provided, and a light shielding layer 300 is formed on the package cover 200 corresponding to a pixel spacing area of the OLED backplane 100.
  • the light shielding layer 300 may be an organic photoresist material, such as polyimide, black matrix material or other organic photoresist material having a low light transmittance.
  • the light is used.
  • the occlusion layer 300 is specifically formed by a yellow light process, wherein the yellow light process specifically includes a photoresist coating step, an exposure step, and a development step. or,
  • the light shielding layer 300 may also be made of an inorganic material having a low light transmittance.
  • the film is formed by sequentially performing a film forming process, a yellow light process, and an etching process.
  • the film process adopts a chemical vapor deposition process or a physical vapor deposition process; the yellow light
  • the process includes a photoresist coating step, an exposure step, and a development step which are sequentially performed; the etching process employs a dry etching process or a wet etching process.
  • Step S3 the light shielding layer 300 formed on the package cover 200 is oriented toward the OLED backplane 100, and the package cover 200 and the OLED backplane 100 are packaged together, so that the light shielding layer 300 corresponds to A OLED display panel as shown in FIG. 2 is obtained on the pixel spacing area of the OLED backplane 100, so that the ray shielding layer 300 can limit the light emitted by each of the top emission OLEDs 120 to its corresponding pixel. Internal emission, blocking the lateral leakage of pixels.
  • the ray shielding layer 300 is correspondingly disposed above the pixel defining layer 130.
  • the method for fabricating the OLED display panel of the present invention comprises: arranging a light shielding layer 300 between the OLED backplane 100 and the package cover 200 over the pixel spacing area to block the lateral light leakage of the pixel, thereby The light emitted by the OLED 120 is limited to be emitted in the corresponding pixel, thereby effectively avoiding the problem of lateral light leakage and color mixing of the pixel.
  • the OLED display panel of the present invention has a light shielding layer disposed between the OLED back plate and the package cover plate corresponding to the pixel spacing area to block the lateral light leakage of the pixel, so that each of the tops can be
  • the light emitted by the OLED is limited to be emitted in the corresponding pixel, thereby effectively avoiding the problem of lateral light leakage and color mixing of the pixel.
  • the method for fabricating the OLED display panel of the present invention can block each side of the OLED backplane and the package cover layer to block the lateral light leakage of the pixel, so that each of the top emission type OLEDs can be shielded.
  • the emitted light is limited to be emitted in the corresponding pixel, thereby effectively avoiding the problem of lateral light leakage and color mixing of the pixel.

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Abstract

一种OLED显示面板，其OLED背板（100）和封装盖板（200）之间在对应于像素间隔区域的上方设有光线遮挡层（300），以遮挡像素的侧向漏光，从而可以将每一顶发射型OLED（120）发出的光线限定在其所对应的像素内发射，进而有效避免了像素侧向漏光和混色问题的发生。一种显示面板的制作方法，通过在对应于像素间隔区域上方于OLED背板（100）和封装盖板（200）之间设置光线遮挡层（300），以遮挡像素的侧向漏光，从而可以将每一顶发射型OLED（120）发出的光线限定在其所对应的像素内发射，进而有效避免了像素侧向漏光和混色问题的发生。

Description

OLED显示面板及其制作方法 技术领域
本发明涉及显示技术领域，尤其涉及一种OLED显示面板及其制作方法。
背景技术
有机发光二极管(Organic Light Emitting Diodes，OLED)显示器具有自发光、驱动电压低、发光效率高、响应时间短、清晰度与对比度高、宽视角、使用温度范围广，可实现柔性显示与大面积全色显示等诸多优点，被业界公认为是最有发展潜力的显示装置。目前应用OLED的产品主要分布在小尺寸的手机、平板电脑(Pad)和较大尺寸的电视(TV)屏幕等。
OLED具有依次形成于基板上的阳极、有机发光材料层和阴极。在大尺寸OLED显示器的应用方向，市面上的产品大多采用底发射型(Bottom emission)结构，将OLED的阴极采用较厚的金属层，采用该结构的OLED显示面板，有机发光材料层发出的光线需要穿透其下方的平坦层(PLN)层及薄膜晶体管(TFT)层，从而降低了发光效率，因此，随着分辨率的增长，底发射型OLED会受到开口率的限制，难以实现高分辨率，越来越多的从业者将精力转向顶发射型(Top emission)OLED的开发，以提高发光效率并实现高分辨率的显示。
但是对于全彩显示的顶发射型OLED显示面板来说，如图1所示，由于每一像素(pixel)的OLED11并非仅是垂直地射向盖板20，而是类似于辐射的方式在OLED背板10上方发射光线，又由于盖板20和OLED背板10在各像素之间不设置遮挡物，那么这就很容易导致本像素的OLED11发出的光线射到另一像素的区域内而产生像素侧向漏光的问题，进而在各像素之间即图中圆圈标示处产生混色的问题。
发明内容
本发明的目的在于提供一种OLED显示面板，其OLED背板和封装盖板之间在对应于像素间隔区域上方设有光线遮挡层，从而可以将每一顶发射型OLED发出的光线限定在其所对应的像素内发射，进而有效避免了像素侧向漏光和混色问题的发生。
本发明的目的还在于提供一种OLED显示面板的制作方法，通过在对 应于像素间隔区域上方于OLED背板和封装盖板之间设置光线遮挡层，从而可以将每一顶发射型OLED发出的光线限定在其所对应的像素内发射，进而有效避免了像素侧向漏光和混色问题的发生。
为实现上述目的，本发明提供一种OLED显示面板，包括相对设置的OLED背板和封装盖板及设于所述封装盖板靠近OLED背板的一侧上的光线遮挡层；
所述OLED背板包括TFT阵列基板及设于所述TFT阵列基板上阵列排布的多个顶发射型OLED；
所述OLED背板具有像素间隔区域及由所述像素间隔区域间隔出的与所述多个顶发射型OLED一一对应的多个像素发光区域；
所述光线遮挡层位于所述OLED背板和封装盖板之间并对应抵靠在所述OLED背板的像素间隔区域上。
所述光线遮挡层为有机光阻材料或无机材料。
每一所述顶发射型OLED包括由下至上依次层叠设于所述TFT阵列基板上的阳极、有机发光材料层及透明阴极。
所述OLED背板还包括设于TFT阵列基板和阳极上的像素定义层，所述像素定义层具有暴露出部分阳极的过孔，每一所述顶发射型OLED的有机发光材料层对应设置于一所述过孔内；所述OLED背板对应于所述像素定义层的区域为像素间隔区域，对应于所述过孔的区域为像素发光区域；
所述光线遮挡层对应设置于所述像素定义层的上方。
所述有机发光材料层的材料为有机蒸镀材料或喷墨打印材料。
本发明还提供一种OLED显示面板的制作方法，包括以下步骤：
步骤S1、提供一TFT基板，在所述TFT基板上形成阵列排布的多个顶发射型OLED，得到OLED背板；所述OLED背板具有像素间隔区域及由所述像素间隔区域间隔出的与所述多个顶发射型OLED一一对应的多个像素发光区域；
步骤S2、提供一封装盖板，在所述封装盖板上对应所述OLED背板的像素间隔区域制作光线遮挡层；
步骤S3、使制作在封装盖板上的光线遮挡层朝向所述OLED背板，对组所述封装盖板与OLED背板并进行封装，使得所述光线遮挡层对应抵靠在所述OLED背板的像素间隔区域上。
所述步骤S2中，所述光线遮挡层为有机光阻材料，所述光线遮挡层具体通过黄光制程制得；或者，
所述光线遮挡层为无机材料，所述光线遮挡层具体通过依次进行的成 膜制程、黄光制程及蚀刻制程制得；
其中，所述黄光制程包括依次进行的光阻涂布步骤、曝光步骤及显影步骤；
所述成膜制程采用化学气相沉积工艺或物理气相沉积工艺；
所述蚀刻制程采用干法蚀刻工艺或湿法蚀刻工艺。
所述步骤S1中，每一所述顶发射型OLED包括由下至上依次层叠设于所述TFT阵列基板上的阳极、有机发光材料层及透明阴极。
所述步骤S1中，还包括在TFT阵列基板和阳极上制作像素定义层，所述像素定义层具有暴露出部分阳极的过孔，每一所述顶发射型OLED的有机发光材料层对应设置于一所述过孔内；
所述OLED背板对应于所述像素定义层的区域为像素间隔区域，对应于所述过孔的区域为像素发光区域；
所述步骤S3中，所述光线遮挡层对应设置于所述像素定义层的上方。
所述步骤S1中，所述有机发光材料层的材料为有机蒸镀材料，所述有机发光材料层通过蒸镀工艺形成；或者，
所述有机发光材料层的材料为喷墨打印材料，所述有机发光材料层通过喷墨打印工艺形成。
本发明还提供一种OLED显示面板，包括相对设置的OLED背板和封装盖板及设于所述封装盖板靠近OLED背板一侧上的光线遮挡层；
所述OLED背板包括TFT阵列基板及设于所述TFT阵列基板上阵列排布的多个顶发射型OLED；
所述OLED背板具有像素间隔区域及由所述像素间隔区域间隔出的与所述多个顶发射型OLED一一对应的多个像素发光区域；
所述光线遮挡层位于所述OLED背板和封装盖板之间并对应抵靠在所述OLED背板的像素间隔区域上；
其中，所述光线遮挡层为有机光阻材料或无机材料；
其中，每一所述顶发射型OLED包括由下至上依次层叠设于所述TFT阵列基板上的阳极、有机发光材料层及透明阴极；
其中，所述OLED背板还包括设于TFT阵列基板和阳极上的像素定义层，所述像素定义层具有暴露出部分阳极的过孔，每一所述顶发射型OLED的有机发光材料层对应设置于一所述过孔内；
所述OLED背板对应于所述像素定义层的区域为像素间隔区域，对应于所述过孔的区域为像素发光区域；
所述光线遮挡层对应设置于所述像素定义层的上方；
其中，所述有机发光材料层的材料为有机蒸镀材料或喷墨打印材料。
本发明的有益效果：本发明的OLED显示面板，其OLED背板和封装盖板之间在对应于像素间隔区域的上方设有光线遮挡层，以遮挡像素的侧向漏光，从而可以将每一顶发射型OLED发出的光线限定在其所对应的像素内发射，进而有效避免了像素侧向漏光和混色问题的发生。本发明的OLED显示面板的制作方法，通过在对应于像素间隔区域上方于OLED背板和封装盖板之间设置光线遮挡层，以遮挡像素的侧向漏光，从而可以将每一顶发射型OLED发出的光线限定在其所对应的像素内发射，进而有效避免了像素侧向漏光和混色问题的发生。
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图说明
下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。
附图中，
图1为现有的OLED显示面板发生像素侧向漏光和混色的示意图；
图2为本发明的OLED显示面板的结构示意图；
图3为本发明的OLED显示面板的制作方法的流程图；
图4为本发明的OLED显示面板的制作方法的步骤S1的示意图；
图5为本发明的OLED显示面板的制作方法的步骤S2的示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图2，本发明首先提供一种OLED显示面板，包括相对设置的OLED背板100和封装盖板200及设于所述封装盖板200靠近OLED背板100的一侧上而位于所述OLED背板100和封装盖板200之间的光线遮挡层300；
所述OLED背板100包括TFT阵列基板110及设于所述TFT阵列基板110上阵列排布的多个顶发射型OLED120；
所述OLED背板100具有像素间隔区域及由所述像素间隔区域间隔出的与所述多个顶发射型OLED120一一对应的多个像素发光区域；
所述光线遮挡层300对应抵靠在所述OLED背板100的像素间隔区域上，从而可以将每一顶发射型OLED120发出的光线限定在其所对应的像素内发射，遮挡像素的侧向漏光。
具体地，所述光线遮挡层300可以采用有机光阻材料，例如，聚酰亚胺(PI)、黑色矩阵(Black Matrix，BM)材料或其他光透过率较低的有机光阻材料，其具体通过黄光制程制作形成，其中，所述的黄光制程具体包括依次进行的光阻涂布(coating)步骤、曝光步骤及显影步骤。或者，
所述光线遮挡层300也可以采用光透过率较低的无机材料，则其具体通过依次进行的成膜制程、黄光制程及蚀刻制程制作形成；其中，所述成膜制程采用化学气相沉积(Chemical Vapor Deposition，CVD)工艺或物理气相沉积(Physical Vapor Deposition，PVD)工艺；所述黄光制程包括依次进行的光阻涂布步骤、曝光步骤及显影步骤；所述蚀刻制程采用干法蚀刻工艺或湿法蚀刻工艺。
具体地，所述TFT阵列基板110带有多个阵列排布的对所述顶发射型OLED120进行驱动的TFT(未图示)，所述TFT的类型没有限制，其可以为低温多晶硅型(Low Temperature Poly-silicon，LTPS)、氧化物型(Oxide)或者固相晶化型(Solid-Phase-Crystallization，SPC)等任意类型的TFT。
具体地，每一所述顶发射型OLED120包括由下至上依次层叠设于所述TFT阵列基板110上的阳极121、有机发光材料层122及透明阴极123。
具体地，所述OLED背板100还包括设于TFT阵列基板110和阳极121上的像素定义层(Pixel Definition Layer，PDL)130，所述像素定义层130具有暴露出部分阳极121的过孔131，每一所述顶发射型OLED120的有机发光材料层122对应设置于一所述过孔131内。
具体地，所述OLED背板100对应于所述像素定义层130的区域为像素间隔区域，对应于所述过孔131的区域为像素发光区域。
具体地，所述光线遮挡层300对应设置于所述像素定义层130的上方。
具体地，所述有机发光材料层122可以采用有机蒸镀材料，其通过蒸镀工艺制作形成，则所述像素定义层130采用常规的非疏水性PDL材料即可；或者，
所述有机发光材料层122也可以采用喷墨打印(Ink Jet Printing，IJP)材料，所述有机发光材料层122通过喷墨打印工艺制作形成，则所述像素定义层130需采用疏水性的PDL材料。
本发明的OLED显示面板，其OLED背板100和封装盖板200之间在对应于像素间隔区域上方设有光线遮挡层300，以遮挡像素的侧向漏光，从 而可以将每一顶发射型OLED120发出的光线限定在其所对应的像素内发射，进而有效避免了像素侧向漏光和混色问题的发生。
请参阅图3，基于上述的OLED显示面板，本发明还提供一种OLED显示面板的制作方法，包括以下步骤：
步骤S1、如图4所示，提供一TFT基板110，在所述TFT基板110上形成阵列排布的多个顶发射型OLED120，得到OLED背板100；所述OLED背板100具有像素间隔区域及由所述像素间隔区域间隔出的与所述多个顶发射型OLED120一一对应的多个像素发光区域。
具体地，所述TFT阵列基板110带有多个阵列排布的对所述顶发射型OLED120进行驱动的TFT，所述TFT的类型没有限制，其可以为低温多晶硅型、氧化物型或者固相晶化型等任意类型的TFT。
具体地，每一所述顶发射型OLED120包括由下至上依次层叠设于所述TFT阵列基板110上的阳极121、有机发光材料层122及透明阴极123。
具体地，所述步骤S1还包括，在制作所述多个顶发射型OLED120的有机发光材料层122之前，在所述TFT阵列基板110和阳极121上制作像素定义层130，所述像素定义层130具有暴露出部分阳极121的过孔131，每一所述顶发射型OLED120的有机发光材料层122对应设置于一所述过孔131内；所述OLED背板100对应于所述像素定义层130的区域为像素间隔区域，对应于所述过孔131的区域为像素发光区域。
具体地，所述有机发光材料层122可以采用有机蒸镀材料，所述步骤S1中，其通过蒸镀工艺制作形成，则所述像素定义层130采用常规的非疏水性PDL材料即可；或者，
所述有机发光材料层122也可以采用喷墨打印材料，所述步骤S1中，所述有机发光材料层122通过喷墨打印工艺制作形成，则所述像素定义层130需采用疏水性的PDL材料。
步骤S2、如图5所示，提供一封装盖板200，在所述封装盖板200上对应所述OLED背板100的像素间隔区域制作光线遮挡层300。
具体地，所述光线遮挡层300可以采用有机光阻材料，例如，聚酰亚胺、黑色矩阵材料或其他光透过率较低的有机光阻材料，则所述步骤S3中，所述光线遮挡层300具体通过黄光制程制作形成，其中，所述的黄光制程具体包括依次进行的光阻涂布步骤、曝光步骤及显影步骤。或者，
所述光线遮挡层300也可以采用光透过率较低的无机材料，则所述步骤S3中，其具体通过依次进行的成膜制程、黄光制程及蚀刻制程制得；其中，所述成膜制程采用化学气相沉积工艺或物理气相沉积工艺；所述黄光 制程包括依次进行的光阻涂布步骤、曝光步骤及显影步骤；所述蚀刻制程采用干法蚀刻工艺或湿法蚀刻工艺。
步骤S3、使制作在封装盖板200上的光线遮挡层300朝向所述OLED背板100，对组所述封装盖板200与OLED背板100并进行封装，使得所述光线遮挡层300对应抵靠在所述OLED背板100的像素间隔区域上，得到如图2所示的OLED显示面板，从而所述光线遮挡层300可以将每一顶发射型OLED120发出的光线限定在其所对应的像素内发射，遮挡像素的侧向漏光。
具体地，所述步骤S3中，在对组所述封装盖板200与OLED背板100并进行封装后，所述光线遮挡层300对应设置于所述像素定义层130的上方。
本发明的OLED显示面板的制作方法，通过在对应于像素间隔区域上方于OLED背板100和封装盖板200之间设置光线遮挡层300，以遮挡像素的侧向漏光，从而可以将每一顶发射型OLED120发出的光线限定在其所对应的像素内发射，进而有效避免了像素侧向漏光和混色问题的发生。
综上所述，本发明的OLED显示面板，其OLED背板和封装盖板之间在对应于像素间隔区域的上方设有光线遮挡层，以遮挡像素的侧向漏光，从而可以将每一顶发射型OLED发出的光线限定在其所对应的像素内发射，进而有效避免了像素侧向漏光和混色问题的发生。本发明的OLED显示面板的制作方法，通过在对应于像素间隔区域上方于OLED背板和封装盖板之间设置光线遮挡层，以遮挡像素的侧向漏光，从而可以将每一顶发射型OLED发出的光线限定在其所对应的像素内发射，进而有效避免了像素侧向漏光和混色问题的发生。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (11)

  1. 一种OLED显示面板，包括相对设置的OLED背板和封装盖板及设于所述封装盖板靠近OLED背板一侧上的光线遮挡层；
    所述OLED背板包括TFT阵列基板及设于所述TFT阵列基板上阵列排布的多个顶发射型OLED；
    所述OLED背板具有像素间隔区域及由所述像素间隔区域间隔出的与所述多个顶发射型OLED一一对应的多个像素发光区域；
    所述光线遮挡层位于所述OLED背板和封装盖板之间并对应抵靠在所述OLED背板的像素间隔区域上。
  2. 如权利要求1所述的OLED显示面板，其中，所述光线遮挡层为有机光阻材料或无机材料。
  3. 如权利要求1所述的OLED显示面板，其中，每一所述顶发射型OLED包括由下至上依次层叠设于所述TFT阵列基板上的阳极、有机发光材料层及透明阴极。
  4. 如权利要求3所述的OLED显示面板，其中，所述OLED背板还包括设于TFT阵列基板和阳极上的像素定义层，所述像素定义层具有暴露出部分阳极的过孔，每一所述顶发射型OLED的有机发光材料层对应设置于一所述过孔内；
    所述OLED背板对应于所述像素定义层的区域为像素间隔区域，对应于所述过孔的区域为像素发光区域；
    所述光线遮挡层对应设置于所述像素定义层的上方。
  5. 如权利要求3所述的OLED显示面板，其中，所述有机发光材料层的材料为有机蒸镀材料或喷墨打印材料。
  6. 一种OLED显示面板的制作方法，包括以下步骤：
    步骤S1、提供一TFT基板，在所述TFT基板上形成阵列排布的多个顶发射型OLED，得到OLED背板；所述OLED背板具有像素间隔区域及由所述像素间隔区域间隔出的与所述多个顶发射型OLED一一对应的多个像素发光区域；
    步骤S2、提供一封装盖板，在所述封装盖板上对应所述OLED背板的像素间隔区域制作光线遮挡层；
    步骤S3、使制作在封装盖板上的光线遮挡层朝向所述OLED背板，对组所述封装盖板与OLED背板并进行封装，使得所述光线遮挡层对应抵靠 在所述OLED背板的像素间隔区域上。
  7. 如权利要求6所述的OLED显示面板的制作方法，其中，所述步骤S2中，所述光线遮挡层为有机光阻材料，所述光线遮挡层通过黄光制程制得；或者，
    所述光线遮挡层为无机材料，所述光线遮挡层通过依次进行的成膜制程、黄光制程及蚀刻制程制得；
    其中，所述黄光制程包括依次进行的光阻涂布步骤、曝光步骤及显影步骤；
    所述成膜制程采用化学气相沉积工艺或物理气相沉积工艺；
    所述蚀刻制程采用干法蚀刻工艺或湿法蚀刻工艺。
  8. 如权利要求6所述的OLED显示面板的制作方法，其中，所述步骤S1中，每一所述顶发射型OLED包括由下至上依次层叠设于所述TFT阵列基板上的阳极、有机发光材料层及透明阴极。
  9. 如权利要求8所述的OLED显示面板的制作方法，其中，所述步骤S1中，还包括在TFT阵列基板和阳极上制作像素定义层，所述像素定义层具有暴露出部分阳极的过孔，每一所述顶发射型OLED的有机发光材料层对应设置于一所述过孔内；
    所述OLED背板对应于所述像素定义层的区域为像素间隔区域，对应于所述过孔的区域为像素发光区域；
    所述步骤S3中，所述光线遮挡层对应设置于所述像素定义层的上方。
  10. 如权利要求8所述的OLED显示面板的制作方法，其中，所述步骤S1中，所述有机发光材料层的材料为有机蒸镀材料，所述有机发光材料层通过蒸镀工艺形成；或者，
    所述有机发光材料层的材料为喷墨打印材料，所述有机发光材料层通过喷墨打印工艺形成。
  11. 一种OLED显示面板，包括相对设置的OLED背板和封装盖板及设于所述封装盖板靠近OLED背板一侧上的光线遮挡层；
    所述OLED背板包括TFT阵列基板及设于所述TFT阵列基板上阵列排布的多个顶发射型OLED；
    所述OLED背板具有像素间隔区域及由所述像素间隔区域间隔出的与所述多个顶发射型OLED一一对应的多个像素发光区域；
    所述光线遮挡层位于所述OLED背板和封装盖板之间并对应抵靠在所述OLED背板的像素间隔区域上；
    其中，所述光线遮挡层为有机光阻材料或无机材料；
    其中，每一所述顶发射型OLED包括由下至上依次层叠设于所述TFT阵列基板上的阳极、有机发光材料层及透明阴极；
    其中，所述OLED背板还包括设于TFT阵列基板和阳极上的像素定义层，所述像素定义层具有暴露出部分阳极的过孔，每一所述顶发射型OLED的有机发光材料层对应设置于一所述过孔内；
    所述OLED背板对应于所述像素定义层的区域为像素间隔区域，对应于所述过孔的区域为像素发光区域；
    所述光线遮挡层对应设置于所述像素定义层的上方；
    其中，所述有机发光材料层的材料为有机蒸镀材料或喷墨打印材料。
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