WO2019085108A1 - Oled显示器及其制作方法 - Google Patents

Oled显示器及其制作方法 Download PDF

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Publication number
WO2019085108A1
WO2019085108A1 PCT/CN2017/113564 CN2017113564W WO2019085108A1 WO 2019085108 A1 WO2019085108 A1 WO 2019085108A1 CN 2017113564 W CN2017113564 W CN 2017113564W WO 2019085108 A1 WO2019085108 A1 WO 2019085108A1
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light
pixel isolation
tft substrate
layer
dam
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PCT/CN2017/113564
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English (en)
French (fr)
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范英春
任章淳
张晓星
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深圳市华星光电半导体显示技术有限公司
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Priority to US15/742,586 priority Critical patent/US10424626B2/en
Publication of WO2019085108A1 publication Critical patent/WO2019085108A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/8791—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment

Definitions

  • the present invention relates to the field of display technologies, and in particular, to an OLED display and a method of fabricating the same.
  • OLED Organic Light Emitting Display
  • OLED has self-illumination, low driving voltage, high luminous efficiency, short response time, high definition and contrast ratio, near 180° viewing angle, wide temperature range, and flexible display.
  • a large-area full-color display and many other advantages have been recognized by the industry as the most promising display device.
  • OLED can be divided into two types: passive matrix OLED (PMOLED) and active matrix OLED (AMOLED), namely direct addressing and thin film transistor (TFT) matrix addressing. class.
  • PMOLED passive matrix OLED
  • AMOLED active matrix OLED
  • TFT thin film transistor
  • the AMOLED has pixels arranged in an array, belongs to an active display type, has high luminous efficiency, and is generally used as a high-definition large-sized display device.
  • the OLED device generally includes a substrate, an anode disposed on the substrate, a hole injection layer disposed on the anode, a hole transport layer disposed on the hole injection layer, and a light-emitting layer disposed on the hole transport layer.
  • the principle of illumination of OLED devices is that semiconductor materials and organic luminescent materials are driven by electric fields, causing luminescence by carrier injection and recombination.
  • an OLED device generally uses an ITO pixel electrode and a metal electrode as anodes and cathodes of the device, respectively.
  • electrons and holes are injected from the cathode and the anode to the electron injection layer and the hole injection layer, respectively, and electrons and holes.
  • the holes migrate to the light-emitting layer through the electron transport layer and the hole transport layer, respectively, and meet in the light-emitting layer to form excitons and excite the light-emitting molecules, and the latter emits visible light through radiation relaxation.
  • FIG. 1 is a schematic structural diagram of a top-emitting OLED display, which includes a TFT substrate 100', a plurality of pixel isolation dams 200' disposed on the TFT substrate 100', and is disposed on the TFT substrate. a plurality of OLED light emitting layers 300' on 100', a cathode 400' disposed on the plurality of OLED light emitting layers 300', a package cover 500' disposed above the pixel isolation dam 200' and the cathode 400', and a package cover The frame 500' is connected to the TFT substrate 100'.
  • the TFT substrate 100' includes a base substrate 110', a TFT array layer 120' disposed on the base substrate 110', and a TFT array layer 120'.
  • the layers 300' are respectively disposed in the plurality of pixel regions 101', and the package cover 500' A filter layer 510' is further disposed on a side of the TFT substrate 100'.
  • the plurality of OLED light-emitting layers 300' are all made by printing or vapor-depositing the OLED luminescent material in the pixel region 101', whether by printing or evaporation.
  • the OLED light-emitting layer 300' When the OLED light-emitting layer 300' is formed, part of the light is obliquely incident on the pixel region 101' adjacent to the pixel region 101' where it is located, thereby causing a problem of light leakage and affecting the display effect.
  • An object of the present invention is to provide an OLED display capable of eliminating light leakage generated when an OLED light emitting layer emits light, and displaying quality is good.
  • Another object of the present invention is to provide a method for fabricating an OLED display, which can eliminate light leakage generated when an OLED light emitting layer emits light, and improve display quality of the OLED display.
  • the present invention firstly provides an OLED display, comprising: a TFT substrate, a plurality of light-shielding pixel isolation dams disposed on the TFT substrate, a plurality of OLED light-emitting layers disposed on the TFT substrate, and a plurality of cathodes on the plurality of OLED light emitting layers;
  • the opaque pixel isolation dam includes a dam body and a light shielding portion disposed on the dam body; the dam body of the plurality of light shielding pixel isolation dams surrounds a plurality of pixel regions on the TFT substrate, and the plurality of OLED light emitting layers respectively Located in multiple pixel areas.
  • the TFT substrate includes a base substrate, a TFT array layer provided on the base substrate, a planarization layer covering the TFT array layer, and a plurality of anodes provided on the planarization layer corresponding to the plurality of pixel regions.
  • the OLED display further includes a package cover plate disposed above the light shielding pixel isolation dam and the cathode, and a sealant between the package cover plate and the TFT substrate to connect the package cover plate and the TFT substrate;
  • the OLED display is a top emission type OLED display.
  • the material of the shading pixel isolation dam is an organic material or an inorganic material.
  • the invention also provides a method for manufacturing an OLED display, comprising the following steps:
  • Step S1 providing a TFT substrate
  • Step S2 forming a plurality of light-shielding pixel isolation dams on the TFT substrate
  • the opaque pixel isolation dam includes a dam body and a light shielding portion disposed on the dam body; the dam body of the plurality of light shielding pixel isolation dams surrounds a plurality of pixel regions on the TFT substrate;
  • Step S3 forming an OLED light emitting layer in a plurality of pixel regions of the TFT substrate.
  • the TFT substrate includes a base substrate, a TFT array layer provided on the base substrate, a planarization layer covering the TFT array layer, and a plurality of anodes provided on the planarization layer corresponding to the plurality of pixel regions.
  • the manufacturing method of the OLED display further includes:
  • Step S4 forming a cathode on the OLED light emitting layer
  • Step S5 providing a package cover; forming a sealant on one side of the package cover, and bonding the side of the package cover formed with the sealant to the side of the TFT substrate on which the light-shielded pixel isolation dam is formed, to obtain an OLED display
  • the OLED display is a top emission type OLED display.
  • the material of the shading pixel isolation dam is an organic material or an inorganic material.
  • the material of the light-shielding pixel isolation dam is a photosensitive material; the specific process of forming a plurality of light-shielding pixel isolation dams on the TFT substrate in the step S2 is: coating a pixel isolation dam layer on the TFT substrate, using halftone The mask exposes and develops the pixel isolation dam layer to form a plurality of light shielding pixel isolation dams; or
  • the material of the light-shielding pixel isolation dam is a non-photosensitive material; the specific process of forming a plurality of light-shielding pixel isolation dams on the TFT substrate in the step S2 is: forming a pixel isolation dam layer on the TFT substrate, and then Forming a photoresist layer on the pixel isolation dam layer, exposing and developing the photoresist layer by using a halftone mask to obtain a photoresist pattern corresponding to the light shielding pixel isolation dam, wherein the photoresist pattern corresponds to the light shielding portion
  • the thickness of the portion is larger than the thickness of the portion other than the portion corresponding to the light shielding portion, and the pixel isolation dam layer is etched by the photoresist pattern to remove the pixel isolation dam layer not covered by the photoresist pattern, and then the photoresist pattern is removed.
  • the ashing is performed to remove portions other than the portion corresponding to the light shielding portion of the photoresist pattern, and the pixel isolation dam layer is continuously etched by ashing the photoresist pattern to form a plurality of light shielding pixel isolation dams.
  • an OLED light-emitting layer is formed in a plurality of pixel regions of the TFT substrate by printing or evaporation.
  • the present invention also provides an OLED display, comprising: a TFT substrate, a plurality of light-shielding pixel isolation dams disposed on the TFT substrate, a plurality of OLED light-emitting layers disposed on the TFT substrate, and respectively disposed on the plurality of OLED light-emitting layers Multiple cathodes on;
  • the opaque pixel isolation dam includes a dam body and a light shielding portion disposed on the dam body; the dam body of the plurality of light shielding pixel isolation dams surrounds a plurality of pixel regions on the TFT substrate, and the plurality of OLED light emitting layers respectively Located in multiple pixel areas;
  • the TFT substrate includes: a base substrate, a TFT array layer disposed on the base substrate, a planarization layer covering the TFT array layer, and a plurality of anodes disposed on the planarization layer corresponding to the plurality of pixel regions;
  • the package cover plate disposed on the light-shielding pixel isolation dam and the cathode, and the sealant between the package cover plate and the TFT substrate to connect the package cover plate and the TFT substrate;
  • the OLED display is a top emission type OLED display
  • the material of the shading pixel isolation dam is an organic material or an inorganic material.
  • the present invention provides an OLED display on a TFT substrate a plurality of light-shielded pixel isolation dams are disposed, the light-shielding pixel isolation dam includes a dam body and a light-shielding portion disposed on the dam body, and the dam body of the plurality of light-shielding pixel isolation dams surrounds the plurality of pixel regions on the TFT substrate, The plurality of OLED light-emitting layers are respectively located in the plurality of pixel regions.
  • the problem that the OLED light-emitting layer is caused to leak light due to the oblique incidence of light into the adjacent pixel region during the light-emitting layer can be effectively improved.
  • the display effect of the OLED display can be eliminated. The method for fabricating an OLED display provided by the invention can eliminate the light leakage generated when the OLED light emitting layer emits light, and improve the display quality of the OLED display.
  • FIG. 1 is a schematic structural view of a conventional top emission type OLED display
  • FIG. 2 is a schematic structural view of an OLED display of the present invention
  • FIG. 3 is a flow chart of a method of fabricating an OLED display of the present invention.
  • step S1 is a schematic diagram of step S1 of the method for fabricating an OLED display of the present invention.
  • step S2 is a schematic diagram of step S2 of the method for fabricating an OLED display of the present invention.
  • step S3 is a schematic diagram of step S3 of the method for fabricating an OLED display of the present invention.
  • FIG. 7 is a schematic diagram of step S4 of the method of fabricating the OLED display of the present invention.
  • the present invention provides an OLED display, comprising: a TFT substrate 100, a plurality of light-shielding pixel isolation dams 200 disposed on the TFT substrate 100, and a plurality of OLED light-emitting layers 300 disposed on the TFT substrate 100, A plurality of cathodes 400 respectively disposed on the plurality of OLED light-emitting layers 300, a package cover 500 disposed above the light-shielding pixel isolation dam 200 and the cathode 400, and a package cover 500 between the package cover 500 and the TFT substrate 100 a sealant 600 connected to the TFT substrate 100;
  • the opaque pixel isolation dam 200 includes a dam body 210 and a light shielding portion 220 disposed on the dam body 210.
  • the dam body 210 of the plurality of light shielding pixel isolation dams 200 surrounds the TFT substrate 100.
  • the plurality of pixel regions 101 are respectively located in the plurality of pixel regions 101.
  • the TFT substrate 100 includes a base substrate 110, a TFT array layer 120 disposed on the base substrate 110, a planarization layer 130 covering the TFT array layer 120, and a plurality of layers disposed on the planarization layer 130.
  • the base substrate 110 may be a glass substrate.
  • the TFT array layer 120 has a plurality of TFTs, and the plurality of TFTs may be low temperature polysilicon (LTPS) TFTs, oxide semiconductor (Oxide) TFTs, solid phase crystallization (SPC) TFTs, or other commonly used. TFT in an OLED display.
  • LTPS low temperature polysilicon
  • Oxide oxide semiconductor
  • SPC solid phase crystallization
  • the planarization layer 130 may be an inorganic layer fabricated by chemical vapor deposition (CVD), an organic layer formed by coating, or a combination of the two, and the material of the organic layer may be selected.
  • CVD chemical vapor deposition
  • PI Polyimide
  • the OLED display is a top emission type OLED display.
  • the OLED light emitting layer 300 may include a red OLED light emitting layer, a green OLED light emitting layer, a blue OLED light emitting layer, and of course, a white OLED light emitting layer.
  • a side of the package cover 500 adjacent to the TFT substrate 100 may further be provided with a filter layer (not shown) for filtering light emitted by the OLED light-emitting layer 300.
  • the material of the package cover 500 may be glass.
  • the material of the light-shielding pixel isolation dam 200 may be selected from an organic material or an inorganic material, which is not limited herein.
  • the material of the light-shielding pixel isolation dam 200 may be selected from a photosensitive material, such as a photosensitive polyimide material, or a non-photosensitive material, and correspondingly, when the material of the light-shielding pixel isolation dam 200 is a photosensitive material.
  • the light-shielding pixel isolation dam 200 is directly exposed to a pixel isolation dam layer formed on the TFT substrate 100 by using a half-tone mask
  • the material of the light-shielding pixel isolation dam 200 is a non-photosensitive material
  • a pixel isolation dam layer and a photoresist layer are sequentially formed on the TFT substrate 100, and the photoresist layer is exposed and developed by a halftone mask, and the developed photoresist layer is used as an occlusion to etch the pixel isolation dam layer to obtain a light-shielding pixel. Isolation dam 200.
  • the OLED display of the present invention by providing the light-shielding pixel isolation dam 200 having the light-shielding portion 220, the OLED light-emitting layer 300 fabricated in the pixel region 101 is illuminated toward adjacent pixels.
  • the oblique light of the region 101 can be blocked by the light shielding portion 220 and cannot be incident into the adjacent pixel region 101, thereby effectively preventing the OLED light emitting layer 300 from leaking light due to oblique rays entering the adjacent pixel region 101 during light emission.
  • the problem effectively improves the display effect of the OLED display.
  • the present invention further provides a method for fabricating the above OLED display, comprising the following steps:
  • Step S1 referring to FIG. 4, a TFT substrate 100 is provided.
  • the TFT substrate 100 includes a base substrate 110, a TFT array layer 120 disposed on the base substrate 110, a planarization layer 130 covering the TFT array layer 120, and a plurality of layers disposed on the planarization layer 130.
  • the base substrate 110 may be a glass substrate.
  • the TFT array layer 120 has a plurality of TFTs, and the plurality of TFTs may be low temperature polysilicon TFTs, oxide semiconductor TFTs, solid phase crystallized TFTs, or other TFTs commonly used in OLED displays.
  • the planarization layer 130 may be an inorganic layer formed by chemical vapor deposition, an organic layer formed by coating, or a combination of both, and the material of the organic layer may be selected from polyimide.
  • Step S2 please refer to FIG. 5, forming a plurality of light-shielding pixel isolation dams 200 on the TFT substrate 100;
  • the opaque pixel isolation dam 200 includes a dam body 210 and a light shielding portion 220 disposed on the dam body 210.
  • the dam body 210 of the plurality of light shielding pixel isolation dams 200 surrounds the plurality of pixel regions 101 on the TFT substrate 100.
  • the material of the light shielding pixel isolation dam 200 may be an organic material or an inorganic material.
  • the material of the light-shielding pixel isolation dam 200 may be a photosensitive material, such as photosensitive polyimide; correspondingly, in the step S2, a plurality of light-shielding pixel isolation dams 200 are formed on the TFT substrate 100.
  • the specific process is: coating a pixel isolation dam layer on the TFT substrate 100, and exposing and developing the pixel isolation dam layer by using a halftone mask to form a plurality of light shielding pixel isolation dams 200.
  • the material of the light-shielding pixel isolation dam 200 may also be a non-photosensitive material; correspondingly, the specific process of forming a plurality of light-shielding pixel isolation dams 200 on the TFT substrate 100 in the step S2 is: Forming a pixel isolation dam layer on the TFT substrate 100 by low temperature chemical vapor deposition or other methods commonly used in the prior art for forming a non-photosensitive material layer, and then forming a photoresist layer on the pixel isolation dam layer, using half The photoresist layer exposes and develops the photoresist layer to obtain a photoresist pattern corresponding to the light-shielding pixel isolation dam 200, wherein a portion of the photoresist pattern corresponding to the light-shielding portion 220 has a thickness greater than that corresponding to the light-shielding portion 220.
  • the thickness of the portion other than the portion is etched by the photoresist pattern to etch the pixel isolation dam layer, removing the pixel isolation dam layer not covered by the photoresist pattern, and then ashing the photoresist pattern to remove the photoresist pattern except
  • a portion other than the portion corresponding to the light shielding portion 220 continues to etch the pixel isolation dam layer with the ash resist pattern as an occlusion, thereby forming a plurality of light shielding pixel isolation dams 200.
  • Step S3 referring to FIG. 6, forming an OLED in the plurality of pixel regions 101 of the TFT substrate 100 Light emitting layer 300.
  • the OLED light emitting layer 300 is formed in the plurality of pixel regions 101 of the TFT substrate 100 by printing or evaporation.
  • the OLED light emitting layer 300 may include a red OLED light emitting layer, a green OLED light emitting layer, and a blue OLED light emitting layer.
  • the OLED light emitting layer 300 may further include a white OLED light emitting layer.
  • Step S4 referring to FIG. 7, a cathode 400 is formed on the OLED light emitting layer 300.
  • the material of the cathode 400 may be a magnesium-silver alloy.
  • Step S5 referring to FIG. 2, a package cover 500 is provided; a sealant 600 is formed on an edge of one side of the package cover 500, and a side of the package cover 500 formed with the sealant 600 and the TFT substrate 100 are formed with a light-shielding pixel.
  • One side of the isolation dam 200 is attached to the group to obtain an OLED display, which is a top-emitting OLED display.
  • a side of the encapsulation cover 500 formed with the sealant 600 may further be provided with a filter layer (not shown) for filtering the light emitted by the OLED luminescent layer 300.
  • the material of the package cover 500 may be glass.
  • the OLED light-emitting layer 300 fabricated in the pixel region 101 is obliquely irradiated toward the adjacent pixel region 101 when emitting light. It can be blocked by the light shielding portion 220 and cannot be incident into the adjacent pixel region 101, thereby effectively avoiding the problem that light leakage occurs when the OLED light emitting layer 300 is obliquely incident on the adjacent pixel region 101 during light emission, thereby effectively improving The display effect of the OLED display.
  • a plurality of light-shielding pixel isolation dams are disposed on the TFT substrate, and the light-shielding pixel isolation dam includes a dam body and a light-shielding portion disposed on the dam body, and the plurality of light-shielding pixel isolation dams
  • the dam body surrounds a plurality of pixel regions on the TFT substrate, and the plurality of OLED light-emitting layers are respectively located in the plurality of pixel regions.
  • the problem of light leakage is caused by entering adjacent pixel regions, which effectively improves the display effect of the OLED display.
  • the manufacturing method of the OLED display of the invention can eliminate the light leakage generated when the OLED light emitting layer emits light, and improve the display quality of the OLED display.

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Abstract

提供一种OLED显示器及其制作方法。该OLED显示器在TFT基板（100）上设置数条遮光像素隔离坝（200），遮光像素隔离坝包括坝体（210）、及设于坝体上的遮光部（220），数条遮光像素隔离坝的坝体在TFT基板上围拢出多个像素区域（101），多个OLED发光层（300）分别位于多个像素区域内，通过设置具有遮光部的遮光像素隔离坝，能够避免OLED发光层在发光时因光线斜射入相邻的像素区域而产生漏光的问题，有效地提升了OLED显示器的显示效果。

Description

OLED显示器及其制作方法 技术领域
本发明涉及显示技术领域，尤其涉及一种OLED显示器及其制作方法。
背景技术
有机发光二极管显示装置(Organic Light Emitting Display，OLED)具有自发光、驱动电压低、发光效率高、响应时间短、清晰度与对比度高、近180°视角、使用温度范围宽，可实现柔性显示与大面积全色显示等诸多优点，被业界公认为是最有发展潜力的显示装置。
OLED按照驱动方式可以分为无源矩阵型OLED(Passive Matrix OLED，PMOLED)和有源矩阵型OLED(Active Matrix OLED，AMOLED)两大类，即直接寻址和薄膜晶体管(TFT)矩阵寻址两类。其中，AMOLED具有呈阵列式排布的像素，属于主动显示类型，发光效能高，通常用作高清晰度的大尺寸显示装置。
OLED器件通常包括：基板、设于基板上的阳极、设于阳极上的空穴注入层、设于空穴注入层上的空穴传输层、设于空穴传输层上的发光层、设于发光层上的电子传输层、设于电子传输层上的电子注入层、及设于电子注入层上的阴极。OLED器件的发光原理为半导体材料和有机发光材料在电场驱动下，通过载流子注入和复合导致发光。具体的，OLED器件通常采用ITO像素电极和金属电极分别作为器件的阳极和阴极，在一定电压驱动下，电子和空穴分别从阴极和阳极注入到电子注入层和空穴注入层，电子和空穴分别经过电子传输层和空穴传输层迁移到发光层，并在发光层中相遇，形成激子并使发光分子激发，后者经过辐射弛豫而发出可见光。
请参阅图1，为现有的一种顶发光型的OLED显示器的结构示意图，该OLED显示器包括TFT基板100’、设于TFT基板100’上的多个像素隔离坝200’、设于TFT基板100’上的多个OLED发光层300’、设于多个OLED发光层300’上的阴极400’、设于像素隔离坝200’及阴极400’上方的封装盖板500’、及将封装盖板500’与TFT基板100’连接的框胶600’，所述TFT基板100’包括衬底基板110’、设于衬底基板110’上的TFT阵列层120’、覆盖TFT阵列层120’的平坦化层130’、及设于平坦化层130’上的阳极140’，所述多个像素隔离坝200’在TFT基板100’上围拢出多个像素区域101’，所述多个OLED发光层300’分别设于多个像素区域101’中，所述封装盖板500’ 靠近TFT基板100’的一侧还设有滤光层510’，多个OLED发光层300’均通过在像素区域101’内打印或蒸镀OLED发光材料制得，无论是采用打印或蒸镀工艺，制得的OLED发光层300’在发光时均会有部分光线斜射入与其所在的像素区域101’相邻的像素区域101’，从而产生漏光的问题，影响显示效果。
发明内容
本发明的目的在于提供一种OLED显示器，能够消除OLED发光层发光时产生的漏光，显示品质好。
本发明的另一目的在于提供一种OLED显示器的制作方法，能够消除OLED发光层发光时产生的漏光，提升OLED显示器的显示品质。
为实现上述目的，本发明首先提供一种OLED显示器，包括：TFT基板、设于所述TFT基板上的数条遮光像素隔离坝、设于TFT基板上的多个OLED发光层、及分别设于多个OLED发光层上的多个阴极；
所述遮光像素隔离坝包括坝体、及设于坝体上的遮光部；所述数条遮光像素隔离坝的坝体在TFT基板上围拢出多个像素区域，所述多个OLED发光层分别位于多个像素区域内。
所述TFT基板包括：衬底基板、设于衬底基板上的TFT阵列层、覆盖TFT阵列层的平坦化层、及设于平坦化层上与多个像素区域对应的多个阳极。
所述OLED显示器还包括设于遮光像素隔离坝及阴极上方的封装盖板、及位于封装盖板与TFT基板之间将封装盖板与TFT基板连接的框胶；
所述OLED显示器为顶发光型OLED显示器。
所述遮光像素隔离坝的材料为有机材料或无机材料。
本发明还提供一种OLED显示器的制作方法，包括如下步骤：
步骤S1、提供TFT基板；
步骤S2、在所述TFT基板上形成数条遮光像素隔离坝；
所述遮光像素隔离坝包括坝体、及设于坝体上的遮光部；所述数条遮光像素隔离坝的坝体在TFT基板上围拢出多个像素区域；
步骤S3、在TFT基板的多个像素区域内形成OLED发光层。
所述TFT基板包括：衬底基板、设于衬底基板上的TFT阵列层、覆盖TFT阵列层的平坦化层、及设于平坦化层上与多个像素区域对应的多个阳极。
所述OLED显示器的制作方法还包括：
步骤S4、在OLED发光层上形成阴极；
步骤S5、提供封装盖板；在封装盖板的一侧形成框胶，将封装盖板形成有框胶的一侧与TFT基板形成有遮光像素隔离坝的一侧对组贴合，得到OLED显示器，所述OLED显示器为顶发光型OLED显示器。
所述遮光像素隔离坝的材料为有机材料或无机材料。
所述遮光像素隔离坝的材料为感光性材料；所述步骤S2中在所述TFT基板上形成数条遮光像素隔离坝的具体过程为：在TFT基板上涂覆像素隔离坝层，利用一半色调光罩对所述像素隔离坝层进行曝光及显影，形成数条遮光像素隔离坝；或者，
所述遮光像素隔离坝的材料为非感光性材料；所述步骤S2中在所述TFT基板上形成数条遮光像素隔离坝的具体过程为：在TFT基板上形成一像素隔离坝层，之后在所述像素隔离坝层上形成光阻层，利用一半色调光罩对所述光阻层进行曝光及显影，得到与遮光像素隔离坝对应的光阻图案，所述光阻图案中与遮光部对应的部分的厚度大于除了与遮光部对应的部分以外的部分的厚度，以光阻图案为遮挡对像素隔离坝层进行蚀刻，去除未被光阻图案覆盖的像素隔离坝层，之后对光阻图案进行灰化，去除光阻图案中除了与遮光部对应的部分以外的部分，以灰化后的光阻图案为遮挡继续对像素隔离坝层进行蚀刻，形成数条遮光像素隔离坝。
所述步骤S3中通过打印或蒸镀的方式在TFT基板的多个像素区域内形成OLED发光层。
本发明还提供一种OLED显示器，包括：TFT基板、设于所述TFT基板上的数条遮光像素隔离坝、设于TFT基板上的多个OLED发光层、及分别设于多个OLED发光层上的多个阴极；
所述遮光像素隔离坝包括坝体、及设于坝体上的遮光部；所述数条遮光像素隔离坝的坝体在TFT基板上围拢出多个像素区域，所述多个OLED发光层分别位于多个像素区域内；
其中，所述TFT基板包括：衬底基板、设于衬底基板上的TFT阵列层、覆盖TFT阵列层的平坦化层、及设于平坦化层上与多个像素区域对应的多个阳极；
还包括，设于遮光像素隔离坝及阴极上方的封装盖板、及位于封装盖板与TFT基板之间将封装盖板与TFT基板连接的框胶；
所述OLED显示器为顶发光型OLED显示器；
其中，所述遮光像素隔离坝的材料为有机材料或无机材料。
本发明的有益效果：本发明提供的一种OLED显示器，在TFT基板上 设置数条遮光像素隔离坝，所述遮光像素隔离坝包括坝体、及设于坝体上的遮光部，数条遮光像素隔离坝的坝体在TFT基板上围拢出多个像素区域，所述多个OLED发光层分别位于多个像素区域内，通过设置具有遮光部的遮光像素隔离坝，能够避免OLED发光层在发光时因光线斜射入相邻的像素区域而产生漏光的问题，有效地提升了OLED显示器的显示效果。本发明提供的一种OLED显示器的制作方法，能够消除OLED发光层发光时产生的漏光，提升OLED显示器的显示品质。
附图说明
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图中，
图1为现有的一种顶发光型的OLED显示器的结构示意图；
图2为本发明的OLED显示器的结构示意图；
图3为本发明的OLED显示器的制作方法的流程图；
图4为本发明的OLED显示器的制作方法的步骤S1的示意图；
图5为本发明的OLED显示器的制作方法的步骤S2的示意图；
图6为本发明的OLED显示器的制作方法的步骤S3的示意图；
图7为本发明的OLED显示器的制作方法的步骤S4的示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图2，本发明提供一种OLED显示器，包括：TFT基板100、设于所述TFT基板100上的数条遮光像素隔离坝200、设于TFT基板100上的多个OLED发光层300、分别设于多个OLED发光层300上的多个阴极400、设于遮光像素隔离坝200及阴极400上方的封装盖板500、及位于封装盖板500与TFT基板100之间将封装盖板500与TFT基板100连接的框胶600；
需要重点注意的是，所述遮光像素隔离坝200包括坝体210、及设于坝体210上的遮光部220；所述数条遮光像素隔离坝200的坝体210在TFT基板100上围拢出多个像素区域101，所述多个OLED发光层300分别位于多个像素区域101内。
具体地，所述TFT基板100包括：衬底基板110、设于衬底基板110上的TFT阵列层120、覆盖TFT阵列层120的平坦化层130、及设于平坦化层130上与多个像素区域101对应的多个阳极140。
具体地，所述衬底基板110可为玻璃基板。
具体地，所述TFT阵列层120中具有多个TFT，所述多个TFT可为低温多晶硅(LTPS)TFT、氧化物半导体(Oxide)TFT、固相晶化(SPC)TFT、或其他常用于OLED显示器中的TFT。
具体地，所述平坦化层130可为通过化学气相沉积(CVD)的方式制作的无机层、通过涂布(Coating)形成的有机层、或者两者的结合，所述有机层的材料可选择聚酰亚胺(PI)。
具体地，所述OLED显示器为顶发光型OLED显示器。
具体地，所述OLED发光层300可包括红色OLED发光层、绿色OLED发光层、蓝色OLED发光层，当然，还可包括白色OLED发光层。
进一步地，所述封装盖板500靠近TFT基板100的一侧还可设置滤光层(未图示)，该滤光层用于对OLED发光层300发出的光进行滤光。
具体地，所述封装盖板500的材料可为玻璃。
具体地，所述遮光像素隔离坝200的材料可选择有机材料或无机材料，在此不进行限定。
具体地，所述遮光像素隔离坝200的材料可选择感光性材料，例如光敏聚酰亚胺材料，或者也可选择非感光性材料，对应地，当遮光像素隔离坝200的材料为感光性材料时，通过利用一半色调光罩直接对一形成于TFT基板100上的像素隔离坝层进行曝光显影制程得到遮光像素隔离坝200，当遮光像素隔离坝200的材料为非感光性材料时，通过在TFT基板100上依次形成像素隔离坝层及光阻层，并利用半色调光罩对光阻层进行曝光显影制程，利用显影后的光阻层为遮挡对像素隔离坝层进行蚀刻而得到遮光像素隔离坝200。
需要说明的是，请参阅图2，本发明的OLED显示器，通过设置具有遮光部220的遮光像素隔离坝200，使制作在像素区域101内的OLED发光层300在发光时，朝着相邻像素区域101斜射的光线能够被遮光部220阻挡，而无法射入相邻的像素区域101内，从而有效地避免了OLED发光层300在发光时因光线斜射入相邻的像素区域101而产生漏光的问题，有效地提升了OLED显示器的显示效果。
请参阅图3，基于同一发明构思，本发明还提供一种上述的OLED显示器的制作方法，包括如下步骤：
步骤S1、请参阅图4，提供TFT基板100。
具体地，所述TFT基板100包括：衬底基板110、设于衬底基板110上的TFT阵列层120、覆盖TFT阵列层120的平坦化层130、及设于平坦化层130上与多个像素区域101对应的多个阳极140。
具体地，所述衬底基板110可为玻璃基板。
具体地，所述TFT阵列层120中具有多个TFT，所述多个TFT可为低温多晶硅TFT、氧化物半导体TFT、固相晶化TFT、或其他常用于OLED显示器中的TFT。
具体地，所述平坦化层130可为通过化学气相沉积的方式制作的无机层、通过涂布形成的有机层、或者两者的结合，所述有机层的材料可选择聚酰亚胺。
步骤S2、请参阅图5，在所述TFT基板100上形成数条遮光像素隔离坝200；
所述遮光像素隔离坝200包括坝体210、及设于坝体210上的遮光部220；所述数条遮光像素隔离坝200的坝体210在TFT基板100上围拢出多个像素区域101。
可选地，所述遮光像素隔离坝200的材料可为有机材料或无机材料。
可选地，所述遮光像素隔离坝200的材料可为感光性材料，例如光敏聚酰亚胺；相应地，所述步骤S2中在所述TFT基板100上形成数条遮光像素隔离坝200的具体过程为：在TFT基板100上涂覆像素隔离坝层，利用一半色调光罩对所述像素隔离坝层进行曝光及显影，形成数条遮光像素隔离坝200。
可选地，所述遮光像素隔离坝200的材料也可为非感光性材料；相应地，所述步骤S2中在所述TFT基板100上形成数条遮光像素隔离坝200的具体过程为：在TFT基板100上通过低温化学气相沉积的方式或其他现有技术中常用于形成非感光性材料层的方式形成一像素隔离坝层，之后在所述像素隔离坝层上形成光阻层，利用一半色调光罩对所述光阻层进行曝光及显影，得到与遮光像素隔离坝200对应的光阻图案，所述光阻图案中与遮光部220对应的部分的厚度大于除了与遮光部220对应的部分以外的部分的厚度，以光阻图案为遮挡对像素隔离坝层进行蚀刻，去除未被光阻图案覆盖的像素隔离坝层，之后对光阻图案进行灰化，去除光阻图案中除了与遮光部220对应的部分以外的部分，以灰化后的光阻图案为遮挡继续对像素隔离坝层进行蚀刻，形成数条遮光像素隔离坝200。
步骤S3、请参阅图6，在TFT基板100的多个像素区域101内形成OLED 发光层300。
具体地，所述步骤S3中通过打印或蒸镀的方式在TFT基板100的多个像素区域101内形成OLED发光层300。
具体地，所述OLED发光层300可包括红色OLED发光层、绿色OLED发光层、蓝色OLED发光层，当然，所述OLED发光层300还可包括白色OLED发光层。
步骤S4、请参阅图7，在OLED发光层300上形成阴极400。
具体地，所述阴极400的材料可为镁银合金。
步骤S5、请参阅图2，提供封装盖板500；在封装盖板500的一侧的边缘形成框胶600，将封装盖板500形成有框胶600的一侧与TFT基板100形成有遮光像素隔离坝200的一侧对组贴合，得到OLED显示器，所述OLED显示器为顶发光型OLED显示器。
进一步地，所述封装盖板500形成有框胶600的一侧还可设置滤光层(未图示)，该滤光层用于对OLED发光层300发出的光进行滤光。
具体地，所述封装盖板500的材料可为玻璃。
需要说明的是，本发明通过在TFT基板上制作具有遮光部220的遮光像素隔离坝200，使制作在像素区域101内的OLED发光层300在发光时，朝着相邻像素区域101斜射的光线能够被遮光部220阻挡，而无法射入相邻的像素区域101内，从而有效地避免了OLED发光层300在发光时因光线斜射入相邻的像素区域101而产生漏光的问题，有效地提升了OLED显示器的显示效果。
综上所述，本发明的OLED显示器，在TFT基板上设置数条遮光像素隔离坝，所述遮光像素隔离坝包括坝体、及设于坝体上的遮光部，数条遮光像素隔离坝的坝体在TFT基板上围拢出多个像素区域，所述多个OLED发光层分别位于多个像素区域内，通过设置具有遮光部的遮光像素隔离坝，能够避免OLED发光层在发光时因光线斜射入相邻的像素区域而产生漏光的问题，有效地提升了OLED显示器的显示效果。本发明的OLED显示器的制作方法，能够消除OLED发光层发光时产生的漏光，提升OLED显示器的显示品质。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (11)

  1. 一种OLED显示器，包括：TFT基板、设于所述TFT基板上的数条遮光像素隔离坝、设于TFT基板上的多个OLED发光层、及分别设于多个OLED发光层上的多个阴极；
    所述遮光像素隔离坝包括坝体、及设于坝体上的遮光部；所述数条遮光像素隔离坝的坝体在TFT基板上围拢出多个像素区域，所述多个OLED发光层分别位于多个像素区域内。
  2. 如权利要求1所述的OLED显示器，其中，所述TFT基板包括：衬底基板、设于衬底基板上的TFT阵列层、覆盖TFT阵列层的平坦化层、及设于平坦化层上与多个像素区域对应的多个阳极。
  3. 如权利要求1所述的OLED显示器，还包括，设于遮光像素隔离坝及阴极上方的封装盖板、及位于封装盖板与TFT基板之间将封装盖板与TFT基板连接的框胶；
    所述OLED显示器为顶发光型OLED显示器。
  4. 如权利要求1所述的OLED显示器，其中，所述遮光像素隔离坝的材料为有机材料或无机材料。
  5. 一种OLED显示器的制作方法，包括如下步骤：
    步骤S1、提供TFT基板；
    步骤S2、在所述TFT基板上形成数条遮光像素隔离坝；
    所述遮光像素隔离坝包括坝体、及设于坝体上的遮光部；所述数条遮光像素隔离坝的坝体在TFT基板上围拢出多个像素区域；
    步骤S3、在TFT基板的多个像素区域内形成OLED发光层。
  6. 如权利要求5所述的OLED显示器的制作方法，其中，所述TFT基板包括：衬底基板、设于衬底基板上的TFT阵列层、覆盖TFT阵列层的平坦化层、及设于平坦化层上与多个像素区域对应的多个阳极。
  7. 如权利要求5所述的OLED显示器的制作方法，还包括：
    步骤S4、在OLED发光层上形成阴极；
    步骤S5、提供封装盖板；在封装盖板的一侧形成框胶，将封装盖板形成有框胶的一侧与TFT基板形成有遮光像素隔离坝的一侧对组贴合，得到OLED显示器，所述OLED显示器为顶发光型OLED显示器。
  8. 如权利要求5所述的OLED显示器的制作方法，其中，所述遮光像素隔离坝的材料为有机材料或无机材料。
  9. 如权利要求5所述的OLED显示器的制作方法，其中，所述遮光像素隔离坝的材料为感光性材料；所述步骤S2中在所述TFT基板上形成数条遮光像素隔离坝的具体过程为：在TFT基板上涂覆像素隔离坝层，利用一半色调光罩对所述像素隔离坝层进行曝光及显影，形成数条遮光像素隔离坝；或者，
    所述遮光像素隔离坝的材料为非感光性材料；所述步骤S2中在所述TFT基板上形成数条遮光像素隔离坝的具体过程为：在TFT基板上形成一像素隔离坝层，之后在所述像素隔离坝层上形成光阻层，利用一半色调光罩对所述光阻层进行曝光及显影，得到与遮光像素隔离坝对应的光阻图案，所述光阻图案中与遮光部对应的部分的厚度大于除了与遮光部对应的部分以外的部分的厚度，以光阻图案为遮挡对像素隔离坝层进行蚀刻，去除未被光阻图案覆盖的像素隔离坝层，之后对光阻图案进行灰化，去除光阻图案中除了与遮光部对应的部分以外的部分，以灰化后的光阻图案为遮挡继续对像素隔离坝层进行蚀刻，形成数条遮光像素隔离坝。
  10. 如权利要求5所述的OLED显示器的制作方法，其中，所述步骤S3中通过打印或蒸镀的方式在TFT基板的多个像素区域内形成OLED发光层。
  11. 一种OLED显示器，包括：TFT基板、设于所述TFT基板上的数条遮光像素隔离坝、设于TFT基板上的多个OLED发光层、及分别设于多个OLED发光层上的多个阴极；
    所述遮光像素隔离坝包括坝体、及设于坝体上的遮光部；所述数条遮光像素隔离坝的坝体在TFT基板上围拢出多个像素区域，所述多个OLED发光层分别位于多个像素区域内；
    其中，所述TFT基板包括：衬底基板、设于衬底基板上的TFT阵列层、覆盖TFT阵列层的平坦化层、及设于平坦化层上与多个像素区域对应的多个阳极；
    还包括，设于遮光像素隔离坝及阴极上方的封装盖板、及位于封装盖板与TFT基板之间将封装盖板与TFT基板连接的框胶；
    所述OLED显示器为顶发光型OLED显示器；
    其中，所述遮光像素隔离坝的材料为有机材料或无机材料。
PCT/CN2017/113564 2017-11-06 2017-11-29 Oled显示器及其制作方法 WO2019085108A1 (zh)

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