KR101184202B1 - 고밀도 전계 방출 소자들과 그 방출 소자들 형성 방법 - Google Patents

고밀도 전계 방출 소자들과 그 방출 소자들 형성 방법 Download PDF

Info

Publication number
KR101184202B1
KR101184202B1 KR1020060012904A KR20060012904A KR101184202B1 KR 101184202 B1 KR101184202 B1 KR 101184202B1 KR 1020060012904 A KR1020060012904 A KR 1020060012904A KR 20060012904 A KR20060012904 A KR 20060012904A KR 101184202 B1 KR101184202 B1 KR 101184202B1
Authority
KR
South Korea
Prior art keywords
layer
silicon
delete delete
elements
silicon substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
KR1020060012904A
Other languages
English (en)
Korean (ko)
Other versions
KR20060091242A (ko
Inventor
고성진
제랄드 더블유. 2세 깁슨
Original Assignee
에이저 시스템즈 인크
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 에이저 시스템즈 인크 filed Critical 에이저 시스템즈 인크
Publication of KR20060091242A publication Critical patent/KR20060091242A/ko
Application granted granted Critical
Publication of KR101184202B1 publication Critical patent/KR101184202B1/ko
Assigned to 아바고 테크놀로지스 제너럴 아이피 (싱가포르) 피티이 리미티드 reassignment 아바고 테크놀로지스 제너럴 아이피 (싱가포르) 피티이 리미티드 권리의 전부이전등록 Assignors: 에이저 시스템즈 엘엘시
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • H01J1/3042—Field-emissive cathodes microengineered, e.g. Spindt-type
    • H01J1/3044—Point emitters

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
KR1020060012904A 2005-02-14 2006-02-10 고밀도 전계 방출 소자들과 그 방출 소자들 형성 방법 Expired - Lifetime KR101184202B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/057,690 2005-02-14
US11/057,690 US7564178B2 (en) 2005-02-14 2005-02-14 High-density field emission elements and a method for forming said emission elements

Publications (2)

Publication Number Publication Date
KR20060091242A KR20060091242A (ko) 2006-08-18
KR101184202B1 true KR101184202B1 (ko) 2012-09-20

Family

ID=36814985

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020060012904A Expired - Lifetime KR101184202B1 (ko) 2005-02-14 2006-02-10 고밀도 전계 방출 소자들과 그 방출 소자들 형성 방법

Country Status (3)

Country Link
US (2) US7564178B2 (https=)
JP (1) JP5153075B2 (https=)
KR (1) KR101184202B1 (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7564178B2 (en) * 2005-02-14 2009-07-21 Agere Systems Inc. High-density field emission elements and a method for forming said emission elements
FR2899572B1 (fr) * 2006-04-05 2008-09-05 Commissariat Energie Atomique Protection de cavites debouchant sur une face d'un element microstructure
CA2705542A1 (en) * 2007-11-13 2009-05-22 Sapphire Energy, Inc. Production of fc-fusion polypeptides in eukaryotic algae
TW200942489A (en) * 2008-04-08 2009-10-16 Univ Nat Taiwan Science Tech Nanopins producing method and nanopin arrays fabricated by utilizing the method
US9711392B2 (en) 2012-07-25 2017-07-18 Infineon Technologies Ag Field emission devices and methods of making thereof
EP2819165B1 (en) * 2013-06-26 2018-05-30 Nexperia B.V. Electric field gap device and manufacturing method
US11837435B2 (en) 2020-08-19 2023-12-05 Taiwan Semiconductor Manufacturing Co., Ltd. Atom probe tomography specimen preparation
CN113053917B (zh) * 2021-03-10 2022-08-23 武汉华星光电半导体显示技术有限公司 显示屏、阵列基板及其制造方法

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3789471A (en) * 1970-02-06 1974-02-05 Stanford Research Inst Field emission cathode structures, devices utilizing such structures, and methods of producing such structures
US3665241A (en) * 1970-07-13 1972-05-23 Stanford Research Inst Field ionizer and field emission cathode structures and methods of production
US3921022A (en) * 1974-09-03 1975-11-18 Rca Corp Field emitting device and method of making same
NL7604569A (nl) * 1976-04-29 1977-11-01 Philips Nv Veldemitterinrichting en werkwijze tot het vormen daarvan.
FR2623013A1 (fr) * 1987-11-06 1989-05-12 Commissariat Energie Atomique Source d'electrons a cathodes emissives a micropointes et dispositif de visualisation par cathodoluminescence excitee par emission de champ,utilisant cette source
EP0364964B1 (en) * 1988-10-17 1996-03-27 Matsushita Electric Industrial Co., Ltd. Field emission cathodes
US5129850A (en) * 1991-08-20 1992-07-14 Motorola, Inc. Method of making a molded field emission electron emitter employing a diamond coating
US5302238A (en) * 1992-05-15 1994-04-12 Micron Technology, Inc. Plasma dry etch to produce atomically sharp asperities useful as cold cathodes
KR950008758B1 (ko) * 1992-12-11 1995-08-04 삼성전관주식회사 실리콘 전계방출 소자 및 그의 제조방법
US5534743A (en) * 1993-03-11 1996-07-09 Fed Corporation Field emission display devices, and field emission electron beam source and isolation structure components therefor
US5363021A (en) * 1993-07-12 1994-11-08 Cornell Research Foundation, Inc. Massively parallel array cathode
US5583393A (en) * 1994-03-24 1996-12-10 Fed Corporation Selectively shaped field emission electron beam source, and phosphor array for use therewith
EP0675519A1 (en) * 1994-03-30 1995-10-04 AT&T Corp. Apparatus comprising field emitters
EP0700063A1 (en) * 1994-08-31 1996-03-06 International Business Machines Corporation Structure and method for fabricating of a field emission device
EP0700065B1 (en) * 1994-08-31 2001-09-19 AT&T Corp. Field emission device and method for making same
US5709577A (en) * 1994-12-22 1998-01-20 Lucent Technologies Inc. Method of making field emission devices employing ultra-fine diamond particle emitters
US6027663A (en) * 1995-08-28 2000-02-22 Georgia Tech Research Corporation Method and apparatus for low energy electron enhanced etching of substrates
JPH09288962A (ja) * 1996-04-24 1997-11-04 Ise Electronics Corp 電子放出素子およびその製造方法
US5921838A (en) * 1996-12-27 1999-07-13 Motorola, Inc. Method for protecting extraction electrode during processing of Spindt-tip field emitters
DE19800555A1 (de) * 1998-01-09 1999-07-15 Ibm Feldemissionskomponente, Verfahren zu ihrer Herstellung und Verwendung derselben
US6171164B1 (en) * 1998-02-19 2001-01-09 Micron Technology, Inc. Method for forming uniform sharp tips for use in a field emission array
US6232705B1 (en) * 1998-09-01 2001-05-15 Micron Technology, Inc. Field emitter arrays with gate insulator and cathode formed from single layer of polysilicon
US6176752B1 (en) * 1998-09-10 2001-01-23 Micron Technology, Inc. Baseplate and a method for manufacturing a baseplate for a field emission display
JP3436219B2 (ja) * 1998-11-19 2003-08-11 日本電気株式会社 カーボン材料とその製造方法、及びそれを用いた電界放出型冷陰極
US6235214B1 (en) * 1998-12-03 2001-05-22 Applied Materials, Inc. Plasma etching of silicon using fluorinated gas mixtures
US6426233B1 (en) * 1999-08-03 2002-07-30 Micron Technology, Inc. Uniform emitter array for display devices, etch mask for the same, and methods for making the same
US6350388B1 (en) * 1999-08-19 2002-02-26 Micron Technology, Inc. Method for patterning high density field emitter tips
US6461969B1 (en) * 1999-11-22 2002-10-08 Chartered Semiconductor Manufacturing Ltd. Multiple-step plasma etching process for silicon nitride
JP2004119263A (ja) * 2002-09-27 2004-04-15 Matsushita Electric Ind Co Ltd 電子放出材料およびその製造方法とそれを用いた電界放出素子および画像描画素子
US7112920B2 (en) * 2003-04-21 2006-09-26 National instutute of advanced industrial science and technology Field emission source with plural emitters in an opening
US7564178B2 (en) * 2005-02-14 2009-07-21 Agere Systems Inc. High-density field emission elements and a method for forming said emission elements

Also Published As

Publication number Publication date
JP2006228730A (ja) 2006-08-31
KR20060091242A (ko) 2006-08-18
JP5153075B2 (ja) 2013-02-27
US7564178B2 (en) 2009-07-21
US7981305B2 (en) 2011-07-19
US20060181188A1 (en) 2006-08-17
US20090280585A1 (en) 2009-11-12

Similar Documents

Publication Publication Date Title
US7981305B2 (en) High-density field emission elements and a method for forming said emission elements
US20040027052A1 (en) Field emission device
KR20050071480A (ko) 탄소 나노튜브 평판 디스플레이용 장벽 금속층
US20050139817A1 (en) Field emission device, display adopting the same and method of manufacturing the same
US6417016B1 (en) Structure and method for field emitter tips
KR100250458B1 (ko) 전계 방출 소자의 캐소드 팁 제조 방법
US6660173B2 (en) Method for forming uniform sharp tips for use in a field emission array
JP2002520770A (ja) 電界放射素子
US5481156A (en) Field emission cathode and method for manufacturing a field emission cathode
US6045425A (en) Process for manufacturing arrays of field emission tips
KR100319379B1 (ko) 집속 렌즈를 갖는 전계 방출 표시 소자의 제조방법
KR100405971B1 (ko) 전계방출소자의 집속전극 구조 및 형성방법
KR100260258B1 (ko) 필드 에미터 소자의 제조방법
KR100325075B1 (ko) 전계방출표시소자및그제조방법
KR100260270B1 (ko) 전계방출소자의 필드 에미터 어레이 형성방법
KR100266224B1 (ko) 전계방출 소자 및 그 제조방법과 그를 이용한전계방출 디스플레이 장치
KR100288077B1 (ko) 집속전극을구비한분화구형금속필드에미터어레이형성방법
KR20000002658A (ko) 전계방출표시소자의 금속팁 제조방법
KR20080047180A (ko) 수평 전계방출 반도체 진공관 및 그 제조방법
KR20000002650A (ko) 전계방출표시소자의 제조방법
KR20000002643A (ko) 전계방출표시소자 및 그 제조방법
KR19990043836A (ko) 전계방출 표시소자의 제조방법
KR20020074021A (ko) 전계방출소자의 전극구조
KR20000002648A (ko) 전계방출표시소자의 제조방법
KR20000040119A (ko) 전계방출 표시소자의 제조방법

Legal Events

Date Code Title Description
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 20060210

PG1501 Laying open of application
A201 Request for examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20110210

Comment text: Request for Examination of Application

Patent event code: PA02011R01I

Patent event date: 20060210

Comment text: Patent Application

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20120602

Patent event code: PE09021S01D

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 20120903

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20120913

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20120914

End annual number: 3

Start annual number: 1

PG1601 Publication of registration
FPAY Annual fee payment

Payment date: 20180219

Year of fee payment: 6

PR1001 Payment of annual fee

Payment date: 20180219

Start annual number: 6

End annual number: 6

FPAY Annual fee payment

Payment date: 20180903

Year of fee payment: 7

PR1001 Payment of annual fee

Payment date: 20180903

Start annual number: 7

End annual number: 7

PR1001 Payment of annual fee

Payment date: 20200901

Start annual number: 9

End annual number: 9

PR1001 Payment of annual fee

Payment date: 20210820

Start annual number: 10

End annual number: 10

PR1001 Payment of annual fee

Payment date: 20220822

Start annual number: 11

End annual number: 11

PR1001 Payment of annual fee

Payment date: 20230828

Start annual number: 12

End annual number: 12

PR1001 Payment of annual fee

Payment date: 20240826

Start annual number: 13

End annual number: 13