JP5153075B2 - 高密度電界放出素子および前記放出素子を形成するための方法 - Google Patents

高密度電界放出素子および前記放出素子を形成するための方法 Download PDF

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JP5153075B2
JP5153075B2 JP2006035891A JP2006035891A JP5153075B2 JP 5153075 B2 JP5153075 B2 JP 5153075B2 JP 2006035891 A JP2006035891 A JP 2006035891A JP 2006035891 A JP2006035891 A JP 2006035891A JP 5153075 B2 JP5153075 B2 JP 5153075B2
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Prior art keywords
layer
silicon
opening
emitter
disposed
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JP2006035891A
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Japanese (ja)
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JP2006228730A (ja
JP2006228730A5 (https=
Inventor
ジン コー セオン
ダブリュ．ギブソン，ジュニヤ ジェラルド
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Agere Systems LLC
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Agere Systems LLC
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • H01J1/3042—Field-emissive cathodes microengineered, e.g. Spindt-type
    • H01J1/3044—Point emitters

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
JP2006035891A 2005-02-14 2006-02-14 高密度電界放出素子および前記放出素子を形成するための方法 Expired - Fee Related JP5153075B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/057,690 US7564178B2 (en) 2005-02-14 2005-02-14 High-density field emission elements and a method for forming said emission elements
US11/057690 2005-02-14

Publications (3)

Publication Number Publication Date
JP2006228730A JP2006228730A (ja) 2006-08-31
JP2006228730A5 JP2006228730A5 (https=) 2009-03-05
JP5153075B2 true JP5153075B2 (ja) 2013-02-27

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JP2006035891A Expired - Fee Related JP5153075B2 (ja) 2005-02-14 2006-02-14 高密度電界放出素子および前記放出素子を形成するための方法

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Country Link
US (2) US7564178B2 (https=)
JP (1) JP5153075B2 (https=)
KR (1) KR101184202B1 (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7564178B2 (en) * 2005-02-14 2009-07-21 Agere Systems Inc. High-density field emission elements and a method for forming said emission elements
FR2899572B1 (fr) * 2006-04-05 2008-09-05 Commissariat Energie Atomique Protection de cavites debouchant sur une face d'un element microstructure
CA2705542A1 (en) * 2007-11-13 2009-05-22 Sapphire Energy, Inc. Production of fc-fusion polypeptides in eukaryotic algae
TW200942489A (en) * 2008-04-08 2009-10-16 Univ Nat Taiwan Science Tech Nanopins producing method and nanopin arrays fabricated by utilizing the method
US9711392B2 (en) 2012-07-25 2017-07-18 Infineon Technologies Ag Field emission devices and methods of making thereof
EP2819165B1 (en) * 2013-06-26 2018-05-30 Nexperia B.V. Electric field gap device and manufacturing method
US11837435B2 (en) 2020-08-19 2023-12-05 Taiwan Semiconductor Manufacturing Co., Ltd. Atom probe tomography specimen preparation
CN113053917B (zh) * 2021-03-10 2022-08-23 武汉华星光电半导体显示技术有限公司 显示屏、阵列基板及其制造方法

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3789471A (en) * 1970-02-06 1974-02-05 Stanford Research Inst Field emission cathode structures, devices utilizing such structures, and methods of producing such structures
US3665241A (en) * 1970-07-13 1972-05-23 Stanford Research Inst Field ionizer and field emission cathode structures and methods of production
US3921022A (en) * 1974-09-03 1975-11-18 Rca Corp Field emitting device and method of making same
NL7604569A (nl) * 1976-04-29 1977-11-01 Philips Nv Veldemitterinrichting en werkwijze tot het vormen daarvan.
FR2623013A1 (fr) * 1987-11-06 1989-05-12 Commissariat Energie Atomique Source d'electrons a cathodes emissives a micropointes et dispositif de visualisation par cathodoluminescence excitee par emission de champ,utilisant cette source
EP0364964B1 (en) * 1988-10-17 1996-03-27 Matsushita Electric Industrial Co., Ltd. Field emission cathodes
US5129850A (en) * 1991-08-20 1992-07-14 Motorola, Inc. Method of making a molded field emission electron emitter employing a diamond coating
US5302238A (en) * 1992-05-15 1994-04-12 Micron Technology, Inc. Plasma dry etch to produce atomically sharp asperities useful as cold cathodes
KR950008758B1 (ko) * 1992-12-11 1995-08-04 삼성전관주식회사 실리콘 전계방출 소자 및 그의 제조방법
US5534743A (en) * 1993-03-11 1996-07-09 Fed Corporation Field emission display devices, and field emission electron beam source and isolation structure components therefor
US5363021A (en) * 1993-07-12 1994-11-08 Cornell Research Foundation, Inc. Massively parallel array cathode
US5583393A (en) * 1994-03-24 1996-12-10 Fed Corporation Selectively shaped field emission electron beam source, and phosphor array for use therewith
EP0675519A1 (en) * 1994-03-30 1995-10-04 AT&T Corp. Apparatus comprising field emitters
EP0700063A1 (en) * 1994-08-31 1996-03-06 International Business Machines Corporation Structure and method for fabricating of a field emission device
EP0700065B1 (en) * 1994-08-31 2001-09-19 AT&T Corp. Field emission device and method for making same
US5709577A (en) * 1994-12-22 1998-01-20 Lucent Technologies Inc. Method of making field emission devices employing ultra-fine diamond particle emitters
US6027663A (en) * 1995-08-28 2000-02-22 Georgia Tech Research Corporation Method and apparatus for low energy electron enhanced etching of substrates
JPH09288962A (ja) * 1996-04-24 1997-11-04 Ise Electronics Corp 電子放出素子およびその製造方法
US5921838A (en) * 1996-12-27 1999-07-13 Motorola, Inc. Method for protecting extraction electrode during processing of Spindt-tip field emitters
DE19800555A1 (de) * 1998-01-09 1999-07-15 Ibm Feldemissionskomponente, Verfahren zu ihrer Herstellung und Verwendung derselben
US6171164B1 (en) * 1998-02-19 2001-01-09 Micron Technology, Inc. Method for forming uniform sharp tips for use in a field emission array
US6232705B1 (en) * 1998-09-01 2001-05-15 Micron Technology, Inc. Field emitter arrays with gate insulator and cathode formed from single layer of polysilicon
US6176752B1 (en) * 1998-09-10 2001-01-23 Micron Technology, Inc. Baseplate and a method for manufacturing a baseplate for a field emission display
JP3436219B2 (ja) * 1998-11-19 2003-08-11 日本電気株式会社 カーボン材料とその製造方法、及びそれを用いた電界放出型冷陰極
US6235214B1 (en) * 1998-12-03 2001-05-22 Applied Materials, Inc. Plasma etching of silicon using fluorinated gas mixtures
US6426233B1 (en) * 1999-08-03 2002-07-30 Micron Technology, Inc. Uniform emitter array for display devices, etch mask for the same, and methods for making the same
US6350388B1 (en) * 1999-08-19 2002-02-26 Micron Technology, Inc. Method for patterning high density field emitter tips
US6461969B1 (en) * 1999-11-22 2002-10-08 Chartered Semiconductor Manufacturing Ltd. Multiple-step plasma etching process for silicon nitride
JP2004119263A (ja) * 2002-09-27 2004-04-15 Matsushita Electric Ind Co Ltd 電子放出材料およびその製造方法とそれを用いた電界放出素子および画像描画素子
US7112920B2 (en) * 2003-04-21 2006-09-26 National instutute of advanced industrial science and technology Field emission source with plural emitters in an opening
US7564178B2 (en) * 2005-02-14 2009-07-21 Agere Systems Inc. High-density field emission elements and a method for forming said emission elements

Also Published As

Publication number Publication date
JP2006228730A (ja) 2006-08-31
KR20060091242A (ko) 2006-08-18
US7564178B2 (en) 2009-07-21
US7981305B2 (en) 2011-07-19
US20060181188A1 (en) 2006-08-17
KR101184202B1 (ko) 2012-09-20
US20090280585A1 (en) 2009-11-12

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