JP2004031400A - 基板処理装置及びその処理方法 - Google Patents

基板処理装置及びその処理方法 Download PDF

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Publication number
JP2004031400A
JP2004031400A JP2002181151A JP2002181151A JP2004031400A JP 2004031400 A JP2004031400 A JP 2004031400A JP 2002181151 A JP2002181151 A JP 2002181151A JP 2002181151 A JP2002181151 A JP 2002181151A JP 2004031400 A JP2004031400 A JP 2004031400A
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JP
Japan
Prior art keywords
substrate
processing
processing liquid
recovery
processed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002181151A
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English (en)
Japanese (ja)
Other versions
JP2004031400A5 (enExample
Inventor
Minoru Matsuzawa
松澤　実
Michio Nagasaka
長阪　道雄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sipec Corp
Original Assignee
Sipec Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sipec Corp filed Critical Sipec Corp
Priority to JP2002181151A priority Critical patent/JP2004031400A/ja
Priority to EP03733530A priority patent/EP1536460A4/en
Priority to CNB038174138A priority patent/CN100380601C/zh
Priority to TW092116810A priority patent/TWI311779B/zh
Priority to PCT/JP2003/007849 priority patent/WO2004001828A1/ja
Priority to KR1020047020752A priority patent/KR100704594B1/ko
Priority to US10/516,949 priority patent/US20050244579A1/en
Publication of JP2004031400A publication Critical patent/JP2004031400A/ja
Publication of JP2004031400A5 publication Critical patent/JP2004031400A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02—Cleaning by the force of jets or sprays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Cleaning By Liquid Or Steam (AREA)
JP2002181151A 2002-06-21 2002-06-21 基板処理装置及びその処理方法 Pending JP2004031400A (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2002181151A JP2004031400A (ja) 2002-06-21 2002-06-21 基板処理装置及びその処理方法
EP03733530A EP1536460A4 (en) 2002-06-21 2003-06-20 DEVICE AND METHOD FOR PROCESSING A SUBSTRATE
CNB038174138A CN100380601C (zh) 2002-06-21 2003-06-20 基板处理装置及其基板处理方法
TW092116810A TWI311779B (en) 2002-06-21 2003-06-20 Substrate processing apparatus and processing method thereof
PCT/JP2003/007849 WO2004001828A1 (ja) 2002-06-21 2003-06-20 基板処理装置及び基板処理方法
KR1020047020752A KR100704594B1 (ko) 2002-06-21 2003-06-20 기판 처리 장치 및 기판 처리 방법
US10/516,949 US20050244579A1 (en) 2002-06-21 2003-06-20 Substrate processing device and substrate processing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002181151A JP2004031400A (ja) 2002-06-21 2002-06-21 基板処理装置及びその処理方法

Publications (2)

Publication Number Publication Date
JP2004031400A true JP2004031400A (ja) 2004-01-29
JP2004031400A5 JP2004031400A5 (enExample) 2005-10-20

Family

ID=29996621

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002181151A Pending JP2004031400A (ja) 2002-06-21 2002-06-21 基板処理装置及びその処理方法

Country Status (7)

Country Link
US (1) US20050244579A1 (enExample)
EP (1) EP1536460A4 (enExample)
JP (1) JP2004031400A (enExample)
KR (1) KR100704594B1 (enExample)
CN (1) CN100380601C (enExample)
TW (1) TWI311779B (enExample)
WO (1) WO2004001828A1 (enExample)

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005088691A1 (ja) * 2004-03-12 2005-09-22 Sipec Corporation 基板処理装置
JP2006286832A (ja) * 2005-03-31 2006-10-19 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理方法
JP2007180268A (ja) * 2005-12-28 2007-07-12 Ses Co Ltd 基板処理装置
JP2007311446A (ja) * 2006-05-17 2007-11-29 Realize Advanced Technology Ltd 洗浄装置
KR100797081B1 (ko) * 2006-08-24 2008-01-22 세메스 주식회사 기판 처리 장치 및 방법
JP2008091717A (ja) * 2006-10-03 2008-04-17 Dainippon Screen Mfg Co Ltd 基板処理装置
JP2008141010A (ja) * 2006-12-01 2008-06-19 Dainippon Screen Mfg Co Ltd 基板処理装置
JP2008535252A (ja) * 2005-04-01 2008-08-28 エフエスアイ インターナショナル インコーポレイテッド 一つ又はそれ以上の処理流体を用いた、マイクロエレクトロニクス用加工物に使用されるツール用の移動かつ入れ子化できる、コンパクトなダクトシステム
JP2009520362A (ja) * 2005-12-16 2009-05-21 ソリッド ステイト イクイップメント コーポレイション 化学的分離の装置及び方法
US7913706B2 (en) 2007-08-07 2011-03-29 Fsi International, Inc. Rinsing methodologies for barrier plate and venturi containment systems in tools used to process microelectronic workpieces with one or more treatment fluids, and related apparatuses
JP2012044213A (ja) * 2011-10-26 2012-03-01 Dainippon Screen Mfg Co Ltd 基板処理装置
US8313609B2 (en) 2005-03-31 2012-11-20 Dainippon Screen Mfg. Co., Ltd. Substrate processing apparatus and substrate processing method
US8387635B2 (en) 2006-07-07 2013-03-05 Tel Fsi, Inc. Barrier structure and nozzle device for use in tools used to process microelectronic workpieces with one or more treatment fluids
US9039840B2 (en) 2008-05-09 2015-05-26 Tel Fsi, Inc. Tools and methods for processing microelectronic workpieces using process chamber designs that easily transition between open and closed modes of operation
CN107093567A (zh) * 2016-02-18 2017-08-25 顶程国际股份有限公司 环状液体收集装置

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4796902B2 (ja) * 2005-07-11 2011-10-19 芝浦メカトロニクス株式会社 基板のスピン処理装置
KR100824306B1 (ko) * 2006-12-22 2008-04-22 세메스 주식회사 기판 처리 장치
KR100872877B1 (ko) * 2007-03-06 2008-12-10 세메스 주식회사 기판 처리 장치
JP5084639B2 (ja) 2008-06-30 2012-11-28 芝浦メカトロニクス株式会社 スピン処理装置
CN101958228B (zh) * 2009-07-13 2012-06-20 弘塑科技股份有限公司 具有移动式泄液槽的清洗蚀刻机台
JP5693438B2 (ja) 2011-12-16 2015-04-01 東京エレクトロン株式会社 基板処理装置、基板処理方法および記憶媒体
US10707099B2 (en) 2013-08-12 2020-07-07 Veeco Instruments Inc. Collection chamber apparatus to separate multiple fluids during the semiconductor wafer processing cycle
TWI656594B (zh) * 2016-12-15 2019-04-11 辛耘企業股份有限公司 基板處理裝置
WO2018200398A1 (en) 2017-04-25 2018-11-01 Veeco Precision Surface Processing Llc Semiconductor wafer processing chamber
CN109570126B (zh) * 2018-12-27 2021-06-22 北京半导体专用设备研究所（中国电子科技集团公司第四十五研究所） 多级药品回收的单片清洗装置
JP2024060970A (ja) * 2022-10-20 2024-05-07 東京エレクトロン株式会社 カップ、液処理装置及び液処理方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0434902Y2 (enExample) * 1987-01-13 1992-08-19
JPH0724396A (ja) * 1993-07-12 1995-01-27 Dainippon Screen Mfg Co Ltd 基板処理装置
US5608943A (en) * 1993-08-23 1997-03-11 Tokyo Electron Limited Apparatus for removing process liquid
JP3116297B2 (ja) * 1994-08-03 2000-12-11 東京エレクトロン株式会社 処理方法及び処理装置
TW306011B (enExample) * 1995-04-19 1997-05-21 Tokyo Electron Co Ltd
US5843527A (en) * 1995-06-15 1998-12-01 Dainippon Screen Mfg. Co., Ltd. Coating solution applying method and apparatus
US5725663A (en) * 1996-01-31 1998-03-10 Solitec Wafer Processing, Inc. Apparatus for control of contamination in spin systems
TW357389B (en) * 1996-12-27 1999-05-01 Tokyo Electric Ltd Apparatus and method for supplying process solution to surface of substrate to be processed
JP4043593B2 (ja) * 1998-04-30 2008-02-06 東芝松下ディスプレイテクノロジー株式会社 基板処理装置
JPH11333354A (ja) * 1998-05-27 1999-12-07 Sumitomo Precision Prod Co Ltd 回転式基板処理装置
JP3929192B2 (ja) * 1998-12-21 2007-06-13 大日本スクリーン製造株式会社 基板処理装置
TW504776B (en) * 1999-09-09 2002-10-01 Mimasu Semiconductor Ind Co Wafer rotary holding apparatus and wafer surface treatment apparatus with waste liquid recovery mechanism
JP4426036B2 (ja) * 1999-12-02 2010-03-03 東京エレクトロン株式会社 基板処理装置

Cited By (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100837711B1 (ko) * 2004-03-12 2008-06-13 리아라이즈·아도반스토테쿠노로지 가부시키가이샤 기판 처리 장치
WO2005088691A1 (ja) * 2004-03-12 2005-09-22 Sipec Corporation 基板処理装置
JP2006286832A (ja) * 2005-03-31 2006-10-19 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理方法
US8545668B2 (en) 2005-03-31 2013-10-01 Dainippon Screen Mfg. Co., Ltd. Substrate processing apparatus and substrate processing method
US8313609B2 (en) 2005-03-31 2012-11-20 Dainippon Screen Mfg. Co., Ltd. Substrate processing apparatus and substrate processing method
US8899248B2 (en) 2005-04-01 2014-12-02 Tel Fsi, Inc. Barrier structure and nozzle device for use in tools used to process microelectronic workpieces with one or more treatment fluids
KR101255048B1 (ko) * 2005-04-01 2013-04-16 에프에스아이 인터내쇼날 인크. 하나 이상의 처리 유체를 이용하여 마이크로일렉트로닉 워크피이스를 처리하는데 이용되는 장치용 배리어 구조 및 노즐 장치
US8656936B2 (en) 2005-04-01 2014-02-25 Tel Fsi, Inc. Barrier structure and nozzle device for use in tools used to process microelectronic workpieces with one or more treatment fluids
JP2008535252A (ja) * 2005-04-01 2008-08-28 エフエスアイ インターナショナル インコーポレイテッド 一つ又はそれ以上の処理流体を用いた、マイクロエレクトロニクス用加工物に使用されるツール用の移動かつ入れ子化できる、コンパクトなダクトシステム
US7681581B2 (en) * 2005-04-01 2010-03-23 Fsi International, Inc. Compact duct system incorporating moveable and nestable baffles for use in tools used to process microelectronic workpieces with one or more treatment fluids
JP2009520362A (ja) * 2005-12-16 2009-05-21 ソリッド ステイト イクイップメント コーポレイション 化学的分離の装置及び方法
JP2007180268A (ja) * 2005-12-28 2007-07-12 Ses Co Ltd 基板処理装置
JP2007311446A (ja) * 2006-05-17 2007-11-29 Realize Advanced Technology Ltd 洗浄装置
US8978675B2 (en) 2006-07-07 2015-03-17 Tel Fsi, Inc. Method and apparatus for treating a workpiece with arrays of nozzles
US8387635B2 (en) 2006-07-07 2013-03-05 Tel Fsi, Inc. Barrier structure and nozzle device for use in tools used to process microelectronic workpieces with one or more treatment fluids
US9666456B2 (en) 2006-07-07 2017-05-30 Tel Fsi, Inc. Method and apparatus for treating a workpiece with arrays of nozzles
US8967167B2 (en) 2006-07-07 2015-03-03 Tel Fsi, Inc. Barrier structure and nozzle device for use in tools used to process microelectronic workpieces with one or more treatment fluids
KR100797081B1 (ko) * 2006-08-24 2008-01-22 세메스 주식회사 기판 처리 장치 및 방법
JP2008091717A (ja) * 2006-10-03 2008-04-17 Dainippon Screen Mfg Co Ltd 基板処理装置
JP2008141010A (ja) * 2006-12-01 2008-06-19 Dainippon Screen Mfg Co Ltd 基板処理装置
US7913706B2 (en) 2007-08-07 2011-03-29 Fsi International, Inc. Rinsing methodologies for barrier plate and venturi containment systems in tools used to process microelectronic workpieces with one or more treatment fluids, and related apparatuses
US9039840B2 (en) 2008-05-09 2015-05-26 Tel Fsi, Inc. Tools and methods for processing microelectronic workpieces using process chamber designs that easily transition between open and closed modes of operation
JP2012044213A (ja) * 2011-10-26 2012-03-01 Dainippon Screen Mfg Co Ltd 基板処理装置
CN107093567A (zh) * 2016-02-18 2017-08-25 顶程国际股份有限公司 环状液体收集装置
CN107093567B (zh) * 2016-02-18 2019-08-06 顶程国际股份有限公司 环状液体收集装置

Also Published As

Publication number Publication date
KR100704594B1 (ko) 2007-04-10
CN1672245A (zh) 2005-09-21
WO2004001828A1 (ja) 2003-12-31
TWI311779B (en) 2009-07-01
TW200405451A (en) 2004-04-01
CN100380601C (zh) 2008-04-09
EP1536460A1 (en) 2005-06-01
KR20050016598A (ko) 2005-02-21
US20050244579A1 (en) 2005-11-03
EP1536460A4 (en) 2009-07-29

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