JP2003529206A5 - - Google Patents
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- Publication number
- JP2003529206A5 JP2003529206A5 JP2001540821A JP2001540821A JP2003529206A5 JP 2003529206 A5 JP2003529206 A5 JP 2003529206A5 JP 2001540821 A JP2001540821 A JP 2001540821A JP 2001540821 A JP2001540821 A JP 2001540821A JP 2003529206 A5 JP2003529206 A5 JP 2003529206A5
- Authority
- JP
- Japan
- Prior art keywords
- vapor deposition
- physical vapor
- deposition target
- alloy
- atomic percent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000005240 physical vapour deposition Methods 0.000 claims 19
- 229910045601 alloy Inorganic materials 0.000 claims 11
- 239000000956 alloy Substances 0.000 claims 11
- 239000004332 silver Substances 0.000 claims 8
- 229910052709 silver Inorganic materials 0.000 claims 7
- 229910052718 tin Inorganic materials 0.000 claims 5
- 229910000881 Cu alloy Inorganic materials 0.000 claims 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 4
- 239000010419 fine particle Substances 0.000 claims 3
- 229910001316 Ag alloy Inorganic materials 0.000 claims 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 2
- 229910052802 copper Inorganic materials 0.000 claims 2
- 239000010949 copper Substances 0.000 claims 2
- 239000002245 particle Substances 0.000 claims 2
- 229910052684 Cerium Inorganic materials 0.000 claims 1
- 229910052692 Dysprosium Inorganic materials 0.000 claims 1
- 229910052691 Erbium Inorganic materials 0.000 claims 1
- 229910052693 Europium Inorganic materials 0.000 claims 1
- 229910052688 Gadolinium Inorganic materials 0.000 claims 1
- 229910052689 Holmium Inorganic materials 0.000 claims 1
- 229910052779 Neodymium Inorganic materials 0.000 claims 1
- 229910052777 Praseodymium Inorganic materials 0.000 claims 1
- 229910052772 Samarium Inorganic materials 0.000 claims 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims 1
- 229910052771 Terbium Inorganic materials 0.000 claims 1
- 229910052775 Thulium Inorganic materials 0.000 claims 1
- 229910052769 Ytterbium Inorganic materials 0.000 claims 1
- 229910052790 beryllium Inorganic materials 0.000 claims 1
- 229910052796 boron Inorganic materials 0.000 claims 1
- 229910052793 cadmium Inorganic materials 0.000 claims 1
- 229910052791 calcium Inorganic materials 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 229910052804 chromium Inorganic materials 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 229910052735 hafnium Inorganic materials 0.000 claims 1
- 229910052738 indium Inorganic materials 0.000 claims 1
- 229910052742 iron Inorganic materials 0.000 claims 1
- 229910052746 lanthanum Inorganic materials 0.000 claims 1
- 229910052745 lead Inorganic materials 0.000 claims 1
- 229910052748 manganese Inorganic materials 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 229910052758 niobium Inorganic materials 0.000 claims 1
- 229910052762 osmium Inorganic materials 0.000 claims 1
- 229910052763 palladium Inorganic materials 0.000 claims 1
- 229910052697 platinum Inorganic materials 0.000 claims 1
- 239000002244 precipitate Substances 0.000 claims 1
- 238000001552 radio frequency sputter deposition Methods 0.000 claims 1
- 229910052702 rhenium Inorganic materials 0.000 claims 1
- 229910052703 rhodium Inorganic materials 0.000 claims 1
- 229910052707 ruthenium Inorganic materials 0.000 claims 1
- 229910052711 selenium Inorganic materials 0.000 claims 1
- 229910052712 strontium Inorganic materials 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- 229910052713 technetium Inorganic materials 0.000 claims 1
- 229910052714 tellurium Inorganic materials 0.000 claims 1
- 229910052716 thallium Inorganic materials 0.000 claims 1
- 239000011135 tin Substances 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
- 229910052720 vanadium Inorganic materials 0.000 claims 1
- 229910052727 yttrium Inorganic materials 0.000 claims 1
- 229910052725 zinc Inorganic materials 0.000 claims 1
- 229910052726 zirconium Inorganic materials 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US44902599A | 1999-11-24 | 1999-11-24 | |
| US09/449,025 | 1999-11-24 | ||
| PCT/US2000/031310 WO2001039250A2 (en) | 1999-11-24 | 2000-11-14 | Conductive interconnection |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003529206A JP2003529206A (ja) | 2003-09-30 |
| JP2003529206A5 true JP2003529206A5 (enExample) | 2005-01-06 |
Family
ID=23782571
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001540821A Withdrawn JP2003529206A (ja) | 1999-11-24 | 2000-11-14 | 物理蒸着ターゲット、導電性集積回路金属合金相互接続配線、電気めっきアノード、集積回路における導電性相互接続配線として用いるための金属合金 |
Country Status (7)
| Country | Link |
|---|---|
| US (3) | US6758920B2 (enExample) |
| EP (1) | EP1232525A2 (enExample) |
| JP (1) | JP2003529206A (enExample) |
| KR (1) | KR20020070443A (enExample) |
| CN (1) | CN1425196A (enExample) |
| AU (1) | AU1609501A (enExample) |
| WO (1) | WO2001039250A2 (enExample) |
Families Citing this family (53)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6878250B1 (en) * | 1999-12-16 | 2005-04-12 | Honeywell International Inc. | Sputtering targets formed from cast materials |
| US20040072009A1 (en) * | 1999-12-16 | 2004-04-15 | Segal Vladimir M. | Copper sputtering targets and methods of forming copper sputtering targets |
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| US7696092B2 (en) * | 2001-11-26 | 2010-04-13 | Globalfoundries Inc. | Method of using ternary copper alloy to obtain a low resistance and large grain size interconnect |
| US6703307B2 (en) | 2001-11-26 | 2004-03-09 | Advanced Micro Devices, Inc. | Method of implantation after copper seed deposition |
| US6835655B1 (en) | 2001-11-26 | 2004-12-28 | Advanced Micro Devices, Inc. | Method of implanting copper barrier material to improve electrical performance |
| US6861349B1 (en) | 2002-05-15 | 2005-03-01 | Advanced Micro Devices, Inc. | Method of forming an adhesion layer with an element reactive with a barrier layer |
| JP4794802B2 (ja) | 2002-11-21 | 2011-10-19 | Ｊｘ日鉱日石金属株式会社 | 銅合金スパッタリングターゲット及び半導体素子配線 |
| WO2004083482A1 (ja) * | 2003-03-17 | 2004-09-30 | Nikko Materials Co., Ltd. | 銅合金スパッタリングターゲット及びその製造方法並びに半導体素子配線 |
| US7297247B2 (en) | 2003-05-06 | 2007-11-20 | Applied Materials, Inc. | Electroformed sputtering target |
| CN1839213A (zh) * | 2003-08-21 | 2006-09-27 | 霍尼韦尔国际公司 | 在三元混合物中包含铜的pvd靶和形成含铜pvd靶的方法 |
| US7169706B2 (en) * | 2003-10-16 | 2007-01-30 | Advanced Micro Devices, Inc. | Method of using an adhesion precursor layer for chemical vapor deposition (CVD) copper deposition |
| JP4478038B2 (ja) | 2004-02-27 | 2010-06-09 | 株式会社半導体理工学研究センター | 半導体装置及びその製造方法 |
| KR101101456B1 (ko) * | 2004-03-09 | 2012-01-03 | 이데미쓰 고산 가부시키가이샤 | 박막 트랜지스터, 박막 트랜지스터 기판, 이들의 제조방법, 이들을 사용한 액정 표시 장치, 관련된 장치 및방법, 및 스퍼터링 타깃, 이것을 사용하여 성막한 투명도전막, 투명 전극, 및 관련된 장치 및 방법 |
| US20060071338A1 (en) * | 2004-09-30 | 2006-04-06 | International Business Machines Corporation | Homogeneous Copper Interconnects for BEOL |
| US8795486B2 (en) * | 2005-09-26 | 2014-08-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | PVD target with end of service life detection capability |
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| US8647484B2 (en) | 2005-11-25 | 2014-02-11 | Applied Materials, Inc. | Target for sputtering chamber |
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| JP5234306B2 (ja) * | 2006-10-18 | 2013-07-10 | 三菱マテリアル株式会社 | 熱欠陥発生が少なくかつ表面状態の良好なｔｆｔトランジスターを用いたフラットパネルディスプレイ用配線および電極並びにそれらを形成するためのスパッタリングターゲット |
| US8791018B2 (en) * | 2006-12-19 | 2014-07-29 | Spansion Llc | Method of depositing copper using physical vapor deposition |
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| US8500697B2 (en) * | 2007-10-19 | 2013-08-06 | Pressure Products Medical Supplies, Inc. | Transseptal guidewire |
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| JP5491845B2 (ja) * | 2009-12-16 | 2014-05-14 | 株式会社Ｓｈカッパープロダクツ | スパッタリングターゲット材 |
| CN102011094B (zh) * | 2010-11-25 | 2012-07-25 | 福州阿石创光电子材料有限公司 | 一种光学蒸镀用材料的制备方法 |
| JP5590328B2 (ja) * | 2011-01-14 | 2014-09-17 | 三菱マテリアル株式会社 | 電気銅めっき用含リン銅アノードおよびそれを用いた電解銅めっき方法 |
| JP5626582B2 (ja) * | 2011-01-21 | 2014-11-19 | 三菱マテリアル株式会社 | 電気銅めっき用含リン銅アノードおよびそれを用いた電気銅めっき方法 |
| WO2014132857A1 (ja) * | 2013-03-01 | 2014-09-04 | Jx日鉱日石金属株式会社 | 高純度銅コバルト合金スパッタリングターゲット |
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| JP5694503B2 (ja) * | 2013-12-27 | 2015-04-01 | Jx日鉱日石金属株式会社 | 自己拡散抑制機能を有するシード層及び自己拡散抑制機能を備えたシード層の形成方法 |
| CN105463246A (zh) * | 2015-12-02 | 2016-04-06 | 苏州龙腾万里化工科技有限公司 | 一种磨削机仪器零件用耐用合金 |
| CN105463244A (zh) * | 2015-12-15 | 2016-04-06 | 苏州华安矿业科技有限公司 | 矿用多孔喷头 |
| CN105364428A (zh) * | 2015-12-24 | 2016-03-02 | 常熟市欧迪管业有限公司 | 凝汽器用钛管 |
| CN105463239A (zh) * | 2015-12-28 | 2016-04-06 | 苏州众禹环境科技有限公司 | 工业用旋流分离机 |
| CN107475557A (zh) * | 2015-12-29 | 2017-12-15 | 刘雷 | 一种高导电率高韧性的铜合金电缆导线及其制备方法 |
| CN105463242A (zh) * | 2016-01-05 | 2016-04-06 | 刘操 | 一种高导电率高延展性的铜合金导线及其制备方法 |
| US10269714B2 (en) | 2016-09-06 | 2019-04-23 | International Business Machines Corporation | Low resistance contacts including intermetallic alloy of nickel, platinum, titanium, aluminum and type IV semiconductor elements |
| CN108085531A (zh) * | 2016-11-21 | 2018-05-29 | 宜兴市帝洲新能源科技有限公司 | 一种地暖设备的弯头材料 |
| CN107424664A (zh) * | 2017-03-22 | 2017-12-01 | 合肥浦尔菲电线科技有限公司 | 一种复合高导电率导线 |
| CN107316671A (zh) * | 2017-06-29 | 2017-11-03 | 合肥达户电线电缆科技有限公司 | 一种低电阻率电线及其制作工艺 |
| CN107739873B (zh) * | 2017-09-30 | 2019-02-12 | 重庆鸽牌电线电缆有限公司 | 调相机用含银铜排坯料配方 |
| CN107937878A (zh) * | 2017-11-13 | 2018-04-20 | 有研亿金新材料有限公司 | 一种铜银合金靶材的制备方法 |
| US12385110B2 (en) | 2018-12-13 | 2025-08-12 | Mitsubishi Materials Corporation | Pure copper plate |
| WO2021060023A1 (ja) * | 2019-09-27 | 2021-04-01 | 三菱マテリアル株式会社 | 純銅板 |
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-
2000
- 2000-11-14 WO PCT/US2000/031310 patent/WO2001039250A2/en not_active Ceased
- 2000-11-14 CN CN00818631A patent/CN1425196A/zh active Pending
- 2000-11-14 KR KR1020027006699A patent/KR20020070443A/ko not_active Ceased
- 2000-11-14 JP JP2001540821A patent/JP2003529206A/ja not_active Withdrawn
- 2000-11-14 AU AU16095/01A patent/AU1609501A/en not_active Abandoned
- 2000-11-14 EP EP00978655A patent/EP1232525A2/en not_active Withdrawn
-
2001
- 2001-02-14 US US09/784,234 patent/US6758920B2/en not_active Expired - Fee Related
- 2001-02-14 US US09/783,835 patent/US6797079B2/en not_active Expired - Fee Related
- 2001-02-14 US US09/784,233 patent/US20020014289A1/en not_active Abandoned
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