JP2003243534A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2003243534A5 JP2003243534A5 JP2002036129A JP2002036129A JP2003243534A5 JP 2003243534 A5 JP2003243534 A5 JP 2003243534A5 JP 2002036129 A JP2002036129 A JP 2002036129A JP 2002036129 A JP2002036129 A JP 2002036129A JP 2003243534 A5 JP2003243534 A5 JP 2003243534A5
- Authority
- JP
- Japan
- Prior art keywords
- film
- semiconductor device
- electrode
- pentoxide
- tantalum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims description 29
- 238000004519 manufacturing process Methods 0.000 claims description 7
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Inorganic materials O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 claims 14
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 claims 14
- 239000000203 mixture Substances 0.000 claims 10
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims 10
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 claims 10
- 239000003990 capacitor Substances 0.000 claims 6
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims 4
- 238000000034 method Methods 0.000 claims 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims 4
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims 3
- 229910052758 niobium Inorganic materials 0.000 claims 3
- 239000010955 niobium Substances 0.000 claims 3
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 3
- 229910052707 ruthenium Inorganic materials 0.000 claims 3
- 229910052715 tantalum Inorganic materials 0.000 claims 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 2
- 229910052802 copper Inorganic materials 0.000 claims 2
- 239000010949 copper Substances 0.000 claims 2
- 239000013078 crystal Substances 0.000 claims 2
- 229910052697 platinum Inorganic materials 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 claims 2
- 239000010703 silicon Substances 0.000 claims 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims 2
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 230000004888 barrier function Effects 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 239000012528 membrane Substances 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002036129A JP4012411B2 (ja) | 2002-02-14 | 2002-02-14 | 半導体装置およびその製造方法 |
| US10/300,763 US6833577B2 (en) | 2002-02-14 | 2002-11-21 | Semiconductor device |
| US10/853,133 US6955959B2 (en) | 2002-02-14 | 2004-05-26 | Method of making a memory structure having a multilayered contact and a storage capacitor with a composite dielectric layer of crystalized niobium pentoxide and tantalum pentoxide films |
| US11/242,911 US7265407B2 (en) | 2002-02-14 | 2005-10-05 | Capacitive electrode having semiconductor layers with an interface of separated grain boundaries |
| US11/878,475 US7511327B2 (en) | 2002-02-14 | 2007-07-25 | Capacitive electrode having semiconductor layers with an interface of separated grain boundaries |
| US12/328,046 US7800153B2 (en) | 2002-02-14 | 2008-12-04 | Capacitive electrode having semiconductor layers with an interface of separated grain boundaries |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002036129A JP4012411B2 (ja) | 2002-02-14 | 2002-02-14 | 半導体装置およびその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2003243534A JP2003243534A (ja) | 2003-08-29 |
| JP2003243534A5 true JP2003243534A5 (enExample) | 2005-03-17 |
| JP4012411B2 JP4012411B2 (ja) | 2007-11-21 |
Family
ID=27655022
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002036129A Expired - Fee Related JP4012411B2 (ja) | 2002-02-14 | 2002-02-14 | 半導体装置およびその製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (5) | US6833577B2 (enExample) |
| JP (1) | JP4012411B2 (enExample) |
Families Citing this family (47)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4012411B2 (ja) * | 2002-02-14 | 2007-11-21 | 株式会社ルネサステクノロジ | 半導体装置およびその製造方法 |
| JP4563655B2 (ja) | 2003-04-23 | 2010-10-13 | 株式会社日立製作所 | 半導体装置及びその製造方法 |
| KR100725690B1 (ko) * | 2003-07-08 | 2007-06-07 | 마츠시타 덴끼 산교 가부시키가이샤 | 반도체장치 및 그 제조방법 |
| JP2005032800A (ja) * | 2003-07-08 | 2005-02-03 | Renesas Technology Corp | 半導体装置の製造方法 |
| JP2005129672A (ja) * | 2003-10-23 | 2005-05-19 | Nec Electronics Corp | 半導体装置及びその製造方法 |
| KR100555533B1 (ko) * | 2003-11-27 | 2006-03-03 | 삼성전자주식회사 | 실린더형 스토리지 전극을 포함하는 반도체 메모리 소자및 그 제조방법 |
| JP2005175003A (ja) * | 2003-12-08 | 2005-06-30 | Matsushita Electric Ind Co Ltd | デカップリングコンデンサ及び半導体集積回路 |
| KR100519777B1 (ko) * | 2003-12-15 | 2005-10-07 | 삼성전자주식회사 | 반도체 소자의 캐패시터 및 그 제조 방법 |
| JP4559757B2 (ja) * | 2004-03-18 | 2010-10-13 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
| US6972985B2 (en) * | 2004-05-03 | 2005-12-06 | Unity Semiconductor Corporation | Memory element having islands |
| KR100645041B1 (ko) * | 2004-07-12 | 2006-11-10 | 삼성전자주식회사 | 엠아이엠 캐패시터를 갖는 반도체 소자 및 그 형성 방법 |
| KR100634509B1 (ko) * | 2004-08-20 | 2006-10-13 | 삼성전자주식회사 | 3차원 반도체 캐패시터 및 그 제조 방법 |
| KR100604911B1 (ko) * | 2004-10-20 | 2006-07-28 | 삼성전자주식회사 | 하부전극 콘택을 갖는 반도체 메모리 소자 및 그 제조방법 |
| FR2890982B1 (fr) * | 2005-09-21 | 2008-05-02 | St Microelectronics Sa | Procede de realisation d'une couche dielectrique sur un materiau porteur et un circuit integre comprenant un condensateur incorporant une couche dielectrique |
| KR100832005B1 (ko) * | 2006-06-29 | 2008-05-26 | 주식회사 하이닉스반도체 | 캐패시터 및 그 제조 방법 |
| KR100778227B1 (ko) * | 2006-08-23 | 2007-11-20 | 동부일렉트로닉스 주식회사 | 반도체 소자 및 그 제조방법 |
| KR100854925B1 (ko) * | 2006-12-21 | 2008-08-27 | 동부일렉트로닉스 주식회사 | 반도체 소자 및 그 제조방법 |
| JP2008166563A (ja) | 2006-12-28 | 2008-07-17 | Elpida Memory Inc | 半導体装置および半導体装置の製造方法 |
| JP4400626B2 (ja) | 2007-01-31 | 2010-01-20 | エルピーダメモリ株式会社 | 半導体装置及び半導体装置の製造方法 |
| US20080272421A1 (en) * | 2007-05-02 | 2008-11-06 | Micron Technology, Inc. | Methods, constructions, and devices including tantalum oxide layers |
| KR20090010486A (ko) * | 2007-07-23 | 2009-01-30 | 삼성전자주식회사 | 반도체 메모리 소자 및 그 형성방법 |
| JP5057957B2 (ja) * | 2007-12-17 | 2012-10-24 | 株式会社東芝 | 半導体装置及びその製造方法 |
| JP2010114409A (ja) * | 2008-10-10 | 2010-05-20 | Sony Corp | Ｓｏｉ基板とその製造方法、固体撮像装置とその製造方法、および撮像装置 |
| KR101036744B1 (ko) * | 2009-01-29 | 2011-05-24 | 주식회사 하이닉스반도체 | 반도체 메모리 소자의 제조 방법 |
| JP2011044488A (ja) * | 2009-08-19 | 2011-03-03 | Elpida Memory Inc | 半導体装置およびその製造方法 |
| KR20110044489A (ko) * | 2009-10-23 | 2011-04-29 | 삼성전자주식회사 | 유전층을 포함하는 반도체 구조물, 이를 이용하는 커패시터 및 반도체 구조물의 형성 방법 |
| CN101807517B (zh) * | 2010-02-25 | 2011-09-21 | 中国科学院上海微系统与信息技术研究所 | 形成铜互连mim电容器结构的方法 |
| US8803286B2 (en) * | 2010-11-05 | 2014-08-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Low cost metal-insulator-metal capacitors |
| JP2013058559A (ja) * | 2011-09-07 | 2013-03-28 | Tokyo Electron Ltd | 半導体装置の製造方法及び基板処理システム |
| US9825040B2 (en) | 2013-12-31 | 2017-11-21 | Taiwan Semiconductor Manufacturing Company Limited | Semiconductor arrangement with capacitor and method of fabricating the same |
| US9768109B2 (en) * | 2015-09-22 | 2017-09-19 | Qualcomm Incorporated | Integrated circuits (ICS) on a glass substrate |
| US10177152B1 (en) * | 2017-07-21 | 2019-01-08 | Micron Technology, Inc. | Integrated assemblies comprising stud-type capacitors |
| JP7189814B2 (ja) * | 2019-03-18 | 2022-12-14 | キオクシア株式会社 | 半導体記憶装置 |
| KR102789286B1 (ko) | 2019-03-29 | 2025-04-01 | 삼성전자주식회사 | 캐패시터를 포함하는 반도체 소자 및 그 제조 방법 |
| US11282815B2 (en) | 2020-01-14 | 2022-03-22 | Micron Technology, Inc. | Methods of forming microelectronic devices, and related microelectronic devices and electronic systems |
| CN113517288B (zh) | 2020-04-10 | 2024-03-29 | 长鑫存储技术有限公司 | 半导体结构及其形成方法 |
| US11335602B2 (en) | 2020-06-18 | 2022-05-17 | Micron Technology, Inc. | Methods of forming microelectronic devices, and related microelectronic devices and electronic systems |
| US11699652B2 (en) * | 2020-06-18 | 2023-07-11 | Micron Technology, Inc. | Microelectronic devices and electronic systems |
| US11563018B2 (en) | 2020-06-18 | 2023-01-24 | Micron Technology, Inc. | Microelectronic devices, and related methods, memory devices, and electronic systems |
| US11380669B2 (en) | 2020-06-18 | 2022-07-05 | Micron Technology, Inc. | Methods of forming microelectronic devices |
| US11557569B2 (en) | 2020-06-18 | 2023-01-17 | Micron Technology, Inc. | Microelectronic devices including source structures overlying stack structures, and related electronic systems |
| US11705367B2 (en) | 2020-06-18 | 2023-07-18 | Micron Technology, Inc. | Methods of forming microelectronic devices, and related microelectronic devices, memory devices, electronic systems, and additional methods |
| KR102860346B1 (ko) * | 2020-07-31 | 2025-09-16 | 주식회사 원익아이피에스 | 박막 증착 방법 |
| US11825658B2 (en) | 2020-08-24 | 2023-11-21 | Micron Technology, Inc. | Methods of forming microelectronic devices and memory devices |
| US11417676B2 (en) | 2020-08-24 | 2022-08-16 | Micron Technology, Inc. | Methods of forming microelectronic devices and memory devices, and related microelectronic devices, memory devices, and electronic systems |
| KR102764319B1 (ko) | 2020-09-02 | 2025-02-07 | 삼성전자주식회사 | 반도체 소자 및 이를 포함하는 반도체 장치 |
| US11751408B2 (en) | 2021-02-02 | 2023-09-05 | Micron Technology, Inc. | Methods of forming microelectronic devices, and related microelectronic devices, memory devices, and electronic systems |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5605733A (en) * | 1992-01-22 | 1997-02-25 | Hitachi, Ltd. | Magnetic recording medium, method for its production, and system for its use |
| JP2636755B2 (ja) | 1994-11-09 | 1997-07-30 | 日本電気株式会社 | 半導体装置および半導体装置の製造方法 |
| US6075691A (en) * | 1997-03-06 | 2000-06-13 | Lucent Technologies Inc. | Thin film capacitors and process for making them |
| TW411615B (en) * | 1997-12-04 | 2000-11-11 | Fujitsu Ltd | Semiconductor device and method of manufacturing the same |
| JP2000012796A (ja) | 1998-06-19 | 2000-01-14 | Hitachi Ltd | 半導体装置ならびにその製造方法および製造装置 |
| US6348705B1 (en) * | 1999-12-22 | 2002-02-19 | Advanced Technology Materials, Inc. | Low temperature process for high density thin film integrated capacitors and amorphously frustrated ferroelectric materials therefor |
| US6461931B1 (en) * | 2000-08-29 | 2002-10-08 | Micron Technology, Inc. | Thin dielectric films for DRAM storage capacitors |
| JP3624822B2 (ja) * | 2000-11-22 | 2005-03-02 | 株式会社日立製作所 | 半導体装置およびその製造方法 |
| JP4012411B2 (ja) * | 2002-02-14 | 2007-11-21 | 株式会社ルネサステクノロジ | 半導体装置およびその製造方法 |
-
2002
- 2002-02-14 JP JP2002036129A patent/JP4012411B2/ja not_active Expired - Fee Related
- 2002-11-21 US US10/300,763 patent/US6833577B2/en not_active Expired - Lifetime
-
2004
- 2004-05-26 US US10/853,133 patent/US6955959B2/en not_active Expired - Lifetime
-
2005
- 2005-10-05 US US11/242,911 patent/US7265407B2/en not_active Expired - Fee Related
-
2007
- 2007-07-25 US US11/878,475 patent/US7511327B2/en not_active Expired - Fee Related
-
2008
- 2008-12-04 US US12/328,046 patent/US7800153B2/en not_active Expired - Lifetime
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2003243534A5 (enExample) | ||
| JP3970477B2 (ja) | 強誘電体集積回路及びその製造方法 | |
| TW449882B (en) | Semiconductor device and method of manufacturing the same | |
| JP2002170940A5 (enExample) | ||
| TW434887B (en) | Method of manufacturing ferroelectric memory device | |
| JP2002314044A5 (enExample) | ||
| JP2004165559A5 (enExample) | ||
| JPH05136132A (ja) | 半導体素子の多層構造の段差を緩和させる方法及び多層構造の段差緩和用ダミー層を備えた半導体素子 | |
| KR970008552A (ko) | 반도체 장치의 캐패시터 제조방법 | |
| TWI228798B (en) | Barrier for capacitor over plug structures | |
| EP1035588A3 (en) | Iridium conductive electrode/barrier structure and method for same | |
| KR100358430B1 (ko) | 이리듐 복합 배리어 구조 및 그의 제조 방법 | |
| US7732851B2 (en) | Method for fabricating a three-dimensional capacitor | |
| TW200307364A (en) | Ferroelectric capacitor, method of manufacturing same, and semiconductor memory device | |
| JP3212194B2 (ja) | 半導体装置の製造方法 | |
| JP2001203327A (ja) | 容量素子と抵抗素子とを有する電子部材の製造方法、半導体装置の製造方法、及び半導体装置 | |
| TW200415797A (en) | Capacitor in an interconnect system and method of manufacturing thereof | |
| CA2361737A1 (en) | Capacitor and method for manufacturing the same | |
| JPH11177048A (ja) | 半導体素子およびその製造方法 | |
| JPH11177048A5 (enExample) | ||
| JPH1197632A (ja) | 半導体装置及びその製造方法 | |
| US20040131762A1 (en) | Manufacturing of a high-capacitance capacitor | |
| JPH1174354A5 (enExample) | ||
| JP2002334995A5 (enExample) | ||
| JP2003204043A5 (enExample) |