JP7189814B2 - 半導体記憶装置 - Google Patents
半導体記憶装置 Download PDFInfo
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- JP7189814B2 JP7189814B2 JP2019050252A JP2019050252A JP7189814B2 JP 7189814 B2 JP7189814 B2 JP 7189814B2 JP 2019050252 A JP2019050252 A JP 2019050252A JP 2019050252 A JP2019050252 A JP 2019050252A JP 7189814 B2 JP7189814 B2 JP 7189814B2
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- 239000004065 semiconductor Substances 0.000 title claims description 44
- 238000003860 storage Methods 0.000 title claims description 26
- 230000004888 barrier function Effects 0.000 claims description 50
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 13
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 11
- 229910052799 carbon Inorganic materials 0.000 claims description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 16
- 230000004048 modification Effects 0.000 description 10
- 238000012986 modification Methods 0.000 description 10
- 229910052757 nitrogen Inorganic materials 0.000 description 8
- 238000000231 atomic layer deposition Methods 0.000 description 7
- 230000014759 maintenance of location Effects 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- GETQZCLCWQTVFV-UHFFFAOYSA-N trimethylamine Chemical compound CN(C)C GETQZCLCWQTVFV-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 150000003973 alkyl amines Chemical class 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- HPNMFZURTQLUMO-UHFFFAOYSA-N diethylamine Chemical compound CCNCC HPNMFZURTQLUMO-UHFFFAOYSA-N 0.000 description 1
- 238000010893 electron trap Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000010406 interfacial reaction Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- LXEXBJXDGVGRAR-UHFFFAOYSA-N trichloro(trichlorosilyl)silane Chemical compound Cl[Si](Cl)(Cl)[Si](Cl)(Cl)Cl LXEXBJXDGVGRAR-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
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- H01—ELECTRIC ELEMENTS
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
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- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
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- H01L21/76834—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers formation of thin insulating films on the sidewalls or on top of conductors
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- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
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- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
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Description
バリア層31は、炭素に加えて、シリコンおよび窒素を含有してもよい。
図7は、変形例1に係る半導体記憶装置の要部の構造を示す断面図である。上述した第1実施形態と同様の構成要素には同じ符号を付し、詳細な説明を省略する。
図8は、第2実施形態に係る半導体記憶装置の要部の構造を示す断面図である。上述した第1実施形態と同様の構成要素には同じ符号を付し、詳細な説明を省略する。
図9は、第3実施形態に係る半導体記憶装置の要部の構造を示す断面図である。上述した第1実施形態と同様の構成要素には同じ符号を付し、詳細な説明を省略する。
図10は、第4実施形態に係る半導体記憶装置の要部の構造を示す断面図である。上述した第1実施形態と同様の構成要素には同じ符号を付し、詳細な説明を省略する。
Claims (2)
- 半導体基板と、
前記半導体基板上で複数の電極層が積層された積層体と、
前記積層体内で前記複数の電極層に対向する第1ブロック絶縁膜と、前記第1ブロック絶縁膜に対向する電荷蓄積膜と、前記電荷蓄積膜に対向するトンネル絶縁膜と、前記トンネル絶縁膜に対向するチャネル膜と、を有するメモリ膜と、
前記複数の電極層と前記メモリ膜との界面、および前記メモリ膜内の界面の少なくとも一方に設けられ、炭素を主成分とするバリア層と、
を備え、
前記複数の電極層の各々が、金属層と、前記金属層を覆うバリアメタル層と、前記バリアメタル層を覆う第2ブロック絶縁膜と、を有し、
前記バリア層が、前記第1ブロック絶縁膜と前記第2ブロック絶縁膜との界面に設けられている、半導体記憶装置。 - 半導体基板と、
前記半導体基板上で複数の電極層が積層された積層体と、
前記積層体内で前記複数の電極層に対向する第1ブロック絶縁膜と、前記第1ブロック絶縁膜に対向する電荷蓄積膜と、前記電荷蓄積膜に対向するトンネル絶縁膜と、前記トンネル絶縁膜に対向するチャネル膜と、を有するメモリ膜と、
前記複数の電極層と前記メモリ膜との界面、および前記メモリ膜内の界面の少なくとも一方に設けられ、炭素を主成分とするバリア層と、
を備え、
前記トンネル絶縁膜が、前記電荷蓄積膜に対向する第1膜と、前記チャネル膜に対向する第2膜と、を有し、前記第2膜の酸素濃度は、前記第1膜の酸素濃度よりも多く、
前記バリア層が、前記第1膜と前記第2膜との界面に設けられている、半導体記憶装置。
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JP2019050252A JP7189814B2 (ja) | 2019-03-18 | 2019-03-18 | 半導体記憶装置 |
TW108126126A TWI714183B (zh) | 2019-03-18 | 2019-07-24 | 半導體記憶裝置及其製造方法 |
CN201910726281.1A CN111725224B (zh) | 2019-03-18 | 2019-08-07 | 半导体存储装置及其制造方法 |
US16/569,215 US11309322B2 (en) | 2019-03-18 | 2019-09-12 | Semiconductor memory device |
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JP2019050252A JP7189814B2 (ja) | 2019-03-18 | 2019-03-18 | 半導体記憶装置 |
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JP7189814B2 true JP7189814B2 (ja) | 2022-12-14 |
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US (1) | US11309322B2 (ja) |
JP (1) | JP7189814B2 (ja) |
CN (1) | CN111725224B (ja) |
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JP2022144175A (ja) | 2021-03-18 | 2022-10-03 | キオクシア株式会社 | 半導体装置およびその製造方法 |
WO2023037567A1 (ja) * | 2021-09-09 | 2023-03-16 | キオクシア株式会社 | 半導体記憶装置 |
JP2023086438A (ja) * | 2021-12-10 | 2023-06-22 | キオクシア株式会社 | 半導体装置およびその製造方法 |
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