JP2008053553A - 半導体装置及びその製造方法 - Google Patents
半導体装置及びその製造方法 Download PDFInfo
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- JP2008053553A JP2008053553A JP2006229673A JP2006229673A JP2008053553A JP 2008053553 A JP2008053553 A JP 2008053553A JP 2006229673 A JP2006229673 A JP 2006229673A JP 2006229673 A JP2006229673 A JP 2006229673A JP 2008053553 A JP2008053553 A JP 2008053553A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 134
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 47
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 112
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 112
- 239000000758 substrate Substances 0.000 claims abstract description 45
- 239000001257 hydrogen Substances 0.000 claims abstract description 41
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 41
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 21
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 21
- 239000002994 raw material Substances 0.000 claims abstract description 17
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 50
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 50
- 238000000034 method Methods 0.000 claims description 48
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 32
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 claims description 14
- 238000010438 heat treatment Methods 0.000 claims description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- VYIRVGYSUZPNLF-UHFFFAOYSA-N n-(tert-butylamino)silyl-2-methylpropan-2-amine Chemical compound CC(C)(C)N[SiH2]NC(C)(C)C VYIRVGYSUZPNLF-UHFFFAOYSA-N 0.000 claims description 7
- 239000011368 organic material Substances 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 3
- 230000006866 deterioration Effects 0.000 abstract description 16
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 14
- 230000003647 oxidation Effects 0.000 abstract description 3
- 238000007254 oxidation reaction Methods 0.000 abstract description 3
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 2
- LPQOADBMXVRBNX-UHFFFAOYSA-N ac1ldcw0 Chemical compound Cl.C1CN(C)CCN1C1=C(F)C=C2C(=O)C(C(O)=O)=CN3CCSC1=C32 LPQOADBMXVRBNX-UHFFFAOYSA-N 0.000 abstract 1
- 229920005591 polysilicon Polymers 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 description 27
- 230000014759 maintenance of location Effects 0.000 description 20
- 238000009826 distribution Methods 0.000 description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 239000010410 layer Substances 0.000 description 12
- 229910052710 silicon Inorganic materials 0.000 description 12
- 239000010703 silicon Substances 0.000 description 12
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 10
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 7
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 7
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 229910021529 ammonia Inorganic materials 0.000 description 5
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 229910000077 silane Inorganic materials 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 239000012298 atmosphere Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000009825 accumulation Methods 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- 238000004380 ashing Methods 0.000 description 2
- 125000006309 butyl amino group Chemical group 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- -1 arsenic ions Chemical class 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
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Abstract
【解決手段】p型の半導体基板101の上に、電荷を蓄積するONO膜102を有し、ONO膜102の上に多結晶シリコンからなる複数のワードライン103を有し、ワードライン103の表面、ワードライン103の側面、およびONO膜102の表面上に、有機原料を用いた減圧CVD法による、膜厚が約30nm、水素結合量が約5×1022個/cm3、水素含有量が約5×1022atoms/cm3、炭素含有量が約5×1021atoms/cm3のシリコン窒化膜104を有する。これにより、トラップ膜へのチャージングを無くすと共に、ゲート電極間の酸化絶縁膜中の固定電荷を制御することで、メモリセルのデータ保持特性の劣化を防止することができる。
【選択図】図1
Description
図1(a)〜図1(c)は本発明の実施形態に係る半導体装置の平面構成及び断面構成を示している。
図2A(a)〜図2A(g)及び図2B(a)〜図2B(d)は図1のA−A’、B−B’における本発明の第1の実施形態に係る半導体装置の製造方法の工程順の断面構成を示している。
図3は図1のA−A’、B−B’における本発明の実施形態に係る半導体装置の製造方法の工程順の断面構成を示している。
ここで、本実施形態の製造方法の前半は図2A及び図2Bの製造工程そのものであるため、繰り返しの説明を省略する。
図4(a)〜図4(c)は本発明の実施形態に係る半導体装置の平面構成及び断面構成を示している。
酸化絶縁膜上にシリコン窒化膜を形成することにより酸化絶縁膜中(ゲート電極間)の固定電荷の量を変化させることができ、更にシリコン窒化膜中の水素結合量により固定電荷の量を制御することができるため、書込動作時の電子注入プロファイル及び消去動作時のホール注入プロファイルの最適化が可能となり、メモリセルのデータ保持特性の劣化を防止することができる。
図5(a)〜図5(c)は図4のA−A’、B−B’における本発明の第2の実施形態に係る半導体装置の製造方法の工程順の断面構成を示している。
ここで、本実施形態の製造方法の前半は図2A及び図2B(a)〜図2B(c)の製造工程そのものであるため、繰り返しの説明を省略する。
酸化絶縁膜上にシリコン窒化膜を形成することにより酸化絶縁膜中(ゲート電極間)の固定電荷の量を変化させることができ、更にシリコン窒化膜中の水素結合量により固定電荷の量を制御することができるため、書込動作時の電子注入プロファイル及び消去動作時のホール注入プロファイルの最適化が可能となり、メモリセルのデータ保持特性の劣化を防止することができる。
102 ONO膜(トラップ膜)
102a 第一のシリコン酸化膜
102b シリコン窒化膜
102c 第二のシリコン酸化膜
103 ワードライン(ゲート電極)
104 シリコン窒化膜
105 酸化絶縁膜(ビットライン酸化膜)
106 拡散ビットライン
201 半導体基板(半導体領域)
202 ONO膜(トラップ膜)
202a 第一のシリコン酸化膜
202b シリコン窒化膜
202c 第二のシリコン酸化膜
203 レジストパターン
204 n型拡散層
205 酸化絶縁膜(ビットライン酸化膜)
206 多結晶シリコン膜
207 レジストパターン
208 ワードライン(ゲート電極)
209 シリコン窒化膜
301 半導体基板(半導体領域)
302 ONO膜(トラップ膜)
302a 第一のシリコン酸化膜
302b シリコン窒化膜
302c 第二のシリコン酸化膜
303 n型拡散層
304 酸化絶縁膜(ビットライン酸化膜)
305 ワードライン(ゲート電極)
306 シリコン窒化膜
307 熱バジェット
401 半導体基板(半導体領域)
402 ONO膜(トラップ膜)
402a 第一のシリコン酸化膜
402b シリコン窒化膜
402c 第二のシリコン酸化膜
403 ワードライン(ゲート電極)
404 シリコン窒化膜
405 酸化絶縁膜(ビットライン酸化膜)
406 拡散ビットライン
407 酸化絶縁膜
501 半導体基板(半導体領域)
502 ONO膜(トラップ膜)
502a 第一のシリコン酸化膜
502b シリコン窒化膜
502c 第二のシリコン酸化膜
503 n型拡散層
504 酸化絶縁膜(ビットライン酸化膜)
505 ワードライン(ゲート電極)
506 酸化絶縁膜
507 酸化絶縁膜
508 シリコン窒化膜
601 半導体基板(半導体領域)
602 ONO膜(トラップ膜)
603 ワードライン(ゲート電極)
604 第1のシリコン窒化膜
605 第2のシリコン窒化膜
606 酸化絶縁膜(ビットライン酸化膜)
607 拡散ビットライン
701 半導体基板(半導体領域)
702 ONO膜(トラップ膜)
702a 第一のシリコン酸化膜
702b シリコン窒化膜
702c 第二のシリコン酸化膜
703 レジストパターン
704 n型拡散層
705 酸化絶縁膜(ビットライン酸化膜)
706 拡散ビットライン
707 多結晶シリコン膜
708 レジストパターン
709 ワードライン(ゲート電極)
710 第1のシリコン窒化膜
711 サイドウォール
712 第2のシリコン窒化膜
801 半導体基板(半導体領域)
802 ONO膜(トラップ膜)
803 ワードライン(ゲート電極)
804 拡散ビットライン
805 酸化絶縁膜(ビットライン酸化膜)
806 プラズマCVD法によるシリコン窒化膜
807 減圧CVD法によるシリコン窒化膜
808 プラズマによるホールのチャージング
809 書込動作による電子
810 書込直後の電子分布
811 時間経過後の電子分布
901 半導体基板(半導体領域)
902 ONO膜(トラップ膜)
903 ワードライン(ゲート電極)
904 拡散ビットライン
905 酸化絶縁膜(ビットライン酸化膜)
906 減圧CVD法によるシリコン窒化膜
907 有機原料を用いた減圧CVD法によるシリコン窒化膜
908 プラズマによるホールのチャージング
909 書込動作による電子
910 書込直後の電子分布
911 時間経過後の電子分布
Claims (16)
- 半導体基板中に形成されたソース・ドレイン領域と、前記ソース・ドレイン領域間のチャネル領域上を含む前記半導体基板上に形成された、電荷を蓄積することにより情報を記憶するトラップ膜と、前記トラップ膜上に形成されたゲート電極とを有する半導体装置であって、
前記ゲート電極上、及び隣接する前記ゲート電極間における前記トラップ膜上を覆うように、有機原料を用いた減圧CVD法で形成した炭素を含有するシリコン窒化膜が形成されていることを特徴とする半導体装置。 - 前記隣接するゲート電極間における前記トラップ膜上において、前記トラップ膜と前記炭素を含有するシリコン窒化膜との間に介在するシリコン酸化膜をさらに有することを特徴とする請求項1に記載の半導体装置。
- 前記トラップ膜は、窒素を含む絶縁膜であることを特徴とする請求項1または2に記載の半導体装置。
- 前記炭素を含有するシリコン窒化膜の膜厚は、5nm〜100nmであることを特徴とする請求項1〜3のうちいずれか1項に記載の半導体装置。
- 前記炭素を含有するシリコン窒化膜中の水素結合量は、1020〜1024個/cm3であることを特徴とする請求項1〜4のうちいずれか1項に記載の半導体装置。
- 前記炭素を含有するシリコン窒化膜中の、水素濃度は1020〜1024atoms/cm3、かつ炭素濃度は1018〜1024atoms/cm3であることを特徴とする請求項1〜5のうちいずれか1項に記載の半導体装置。
- 半導体基板中にソース・ドレイン領域を形成する第1工程と、
前記ソース・ドレイン領域間のチャネル領域上を含む前記半導体基板上に、電荷を蓄積することにより情報を記憶するトラップ膜を形成する第2工程と、
前記トラップ膜上にゲート電極を形成する第3工程と、
前記ゲート電極上、及び隣接する前記ゲート電極間における前記トラップ膜上を覆うように有機原料を用いた減圧CVD法によるシリコン窒化膜を形成する第4工程とを備えたことを特徴とする半導体装置の製造方法。 - 前記第3工程と第4工程との間に、
前記隣接するゲート電極間における前記トラップ膜上にシリコン酸化膜を形成する工程と、
異方性エッチングにより前記ゲート電極表面が露出するまで前記シリコン酸化膜を除去することにより、前記ゲート電極間にシリコン酸化膜を埋め込む工程とを有することを特徴とする請求項7に記載の半導体装置の製造方法。 - 前記有機原料は、ビス(3級ブチルアミノ)シランまたはヘキサメチルジシラザンのうち少なくともいずれか1つを用いることを特徴とする請求項7または8に記載の半導体装置の製造方法。
- 前記第4工程の後にさらに熱処理を行うことを特徴とする請求項7〜9のうちいずれか1項に記載の半導体装置の製造方法。
- 前記熱処理の温度は、400℃〜1100℃であることを特徴とする請求項10に記載の半導体装置の製造方法。
- 前記熱処理の時間は、1分以上かつ60分以下であることを特徴とする請求項10または11に記載の半導体装置の製造方法。
- 前記トラップ膜は、窒素を含む絶縁膜であることを特徴とする請求項7〜12のうちいずれか1項に記載の半導体装置の製造方法。
- 前記シリコン窒化膜の膜厚は、5nm〜100nmであることを特徴とする請求項7〜13のうちいずれか1項に記載の半導体装置の製造方法。
- 前記シリコン窒化膜中の水素結合量は、1020〜1024個/cm3であることを特徴とする請求項7〜14のうちいずれか1項に記載の半導体装置の製造方法。
- 前記シリコン窒化膜中の、水素濃度は1020〜1024atoms/cm3、かつ炭素濃度は1018〜1024atoms/cm3であることを特徴とする請求項7〜15のうちいずれか1項に記載の半導体装置の製造方法。
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JP2012094642A (ja) * | 2010-10-26 | 2012-05-17 | Renesas Electronics Corp | 抵抗素子および抵抗素子の製造方法 |
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