JPH1174354A5 - - Google Patents

Info

Publication number
JPH1174354A5
JPH1174354A5 JP1998177267A JP17726798A JPH1174354A5 JP H1174354 A5 JPH1174354 A5 JP H1174354A5 JP 1998177267 A JP1998177267 A JP 1998177267A JP 17726798 A JP17726798 A JP 17726798A JP H1174354 A5 JPH1174354 A5 JP H1174354A5
Authority
JP
Japan
Prior art keywords
film
forming
integrated circuit
semiconductor integrated
circuit device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1998177267A
Other languages
English (en)
Japanese (ja)
Other versions
JPH1174354A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP10177267A priority Critical patent/JPH1174354A/ja
Priority claimed from JP10177267A external-priority patent/JPH1174354A/ja
Publication of JPH1174354A publication Critical patent/JPH1174354A/ja
Publication of JPH1174354A5 publication Critical patent/JPH1174354A5/ja
Pending legal-status Critical Current

Links

JP10177267A 1997-06-30 1998-06-24 半導体集積回路装置およびその製造方法 Pending JPH1174354A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10177267A JPH1174354A (ja) 1997-06-30 1998-06-24 半導体集積回路装置およびその製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP9-174150 1997-06-30
JP17415097 1997-06-30
JP10177267A JPH1174354A (ja) 1997-06-30 1998-06-24 半導体集積回路装置およびその製造方法

Publications (2)

Publication Number Publication Date
JPH1174354A JPH1174354A (ja) 1999-03-16
JPH1174354A5 true JPH1174354A5 (enExample) 2005-02-03

Family

ID=26495851

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10177267A Pending JPH1174354A (ja) 1997-06-30 1998-06-24 半導体集積回路装置およびその製造方法

Country Status (1)

Country Link
JP (1) JPH1174354A (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6159818A (en) 1999-09-02 2000-12-12 Micron Technology, Inc. Method of forming a container capacitor structure
JP2001298028A (ja) * 2000-04-17 2001-10-26 Tokyo Electron Ltd 半導体デバイス製造方法
JP4860219B2 (ja) * 2005-02-14 2012-01-25 東京エレクトロン株式会社 基板の処理方法、電子デバイスの製造方法及びプログラム
US8753933B2 (en) * 2008-11-19 2014-06-17 Micron Technology, Inc. Methods for forming a conductive material, methods for selectively forming a conductive material, methods for forming platinum, and methods for forming conductive structures
JP5209106B2 (ja) * 2011-10-28 2013-06-12 東京エレクトロン株式会社 半導体デバイス製造方法
JP7512386B2 (ja) * 2019-11-21 2024-07-08 アプライド マテリアルズ インコーポレイテッド ダイナミックランダムアクセスメモリのビットラインメタルを平滑化する方法及び装置
JP2021136273A (ja) * 2020-02-25 2021-09-13 キオクシア株式会社 半導体装置およびその製造方法

Similar Documents

Publication Publication Date Title
JP2540024B2 (ja) 金属配線のためのタングステンプラグの形成方法
JP4002647B2 (ja) 半導体素子の薄膜キャパシタ製造方法
JP2962475B2 (ja) 集積回路強誘電体デバイスのための二層メタライゼーション方法
TW201222787A (en) Semiconductor memory
JP2002170940A5 (enExample)
JP2002524872A5 (enExample)
TW432691B (en) Method for forming a DRAM capacitor and capacitor made thereby
JP2000036568A5 (enExample)
JP2000349255A (ja) 半導体記憶装置およびその製造方法
KR970077371A (ko) 반도체 집적회로장치와 그 제조방법
TW200405552A (en) Semiconductor device
KR100533971B1 (ko) 반도체 소자의 캐패시터 제조방법
US5688718A (en) Method of CVD TiN barrier layer integration
JPH1174354A5 (enExample)
JP4662943B2 (ja) コンタクトの形成中、コンタクトホール幅の増大を防ぐ方法
TW200415797A (en) Capacitor in an interconnect system and method of manufacturing thereof
US6596548B2 (en) Method for fabricating a capacitor of a semiconductor device
KR100570059B1 (ko) 반도체 소자의 메탈콘택 형성 방법
JP2003060082A5 (enExample)
JPH01273347A (ja) 半導体装置
TWI234876B (en) Capacitor over plug structure
JP2001267529A (ja) 半導体装置およびその製造方法
KR100307539B1 (ko) 커패시터 제조방법
KR970030375A (ko) 반도체 기판상에 다층 상호 접속패턴을 제조하는 방법
JPH08222629A (ja) 配線構造及び配線構造の製造方法