JP4012411B2 - 半導体装置およびその製造方法 - Google Patents

半導体装置およびその製造方法 Download PDF

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Publication number
JP4012411B2
JP4012411B2 JP2002036129A JP2002036129A JP4012411B2 JP 4012411 B2 JP4012411 B2 JP 4012411B2 JP 2002036129 A JP2002036129 A JP 2002036129A JP 2002036129 A JP2002036129 A JP 2002036129A JP 4012411 B2 JP4012411 B2 JP 4012411B2
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JP
Japan
Prior art keywords
film
semiconductor device
electrode
pentoxide
niobium pentoxide
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Expired - Fee Related
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JP2002036129A
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English (en)
Japanese (ja)
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JP2003243534A (ja
JP2003243534A5 (enExample
Inventor
裕一 松井
正彦 平谷
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Renesas Technology Corp
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Renesas Technology Corp
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Publication date
Application filed by Renesas Technology Corp filed Critical Renesas Technology Corp
Priority to JP2002036129A priority Critical patent/JP4012411B2/ja
Priority to US10/300,763 priority patent/US6833577B2/en
Publication of JP2003243534A publication Critical patent/JP2003243534A/ja
Priority to US10/853,133 priority patent/US6955959B2/en
Publication of JP2003243534A5 publication Critical patent/JP2003243534A5/ja
Priority to US11/242,911 priority patent/US7265407B2/en
Priority to US11/878,475 priority patent/US7511327B2/en
Application granted granted Critical
Publication of JP4012411B2 publication Critical patent/JP4012411B2/ja
Priority to US12/328,046 priority patent/US7800153B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H10P14/662—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/405—Oxides of refractory metals or yttrium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10P14/6334—
    • H10P14/6544—
    • H10P14/6939—
    • H10P14/69397—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/09—Manufacture or treatment with simultaneous manufacture of the peripheral circuit region and memory cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/315—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor with the capacitor higher than a bit line
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/48—Data lines or contacts therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
    • H10D1/684—Capacitors having no potential barriers having dielectrics comprising perovskite structures the dielectrics comprising multiple layers, e.g. comprising buffer layers, seed layers or gradient layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/696—Electrodes comprising multiple layers, e.g. comprising a barrier layer and a metal layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/711—Electrodes having non-planar surfaces, e.g. formed by texturisation
    • H10D1/716—Electrodes having non-planar surfaces, e.g. formed by texturisation having vertical extensions
    • H10P14/69393—

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Formation Of Insulating Films (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2002036129A 2002-02-14 2002-02-14 半導体装置およびその製造方法 Expired - Fee Related JP4012411B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2002036129A JP4012411B2 (ja) 2002-02-14 2002-02-14 半導体装置およびその製造方法
US10/300,763 US6833577B2 (en) 2002-02-14 2002-11-21 Semiconductor device
US10/853,133 US6955959B2 (en) 2002-02-14 2004-05-26 Method of making a memory structure having a multilayered contact and a storage capacitor with a composite dielectric layer of crystalized niobium pentoxide and tantalum pentoxide films
US11/242,911 US7265407B2 (en) 2002-02-14 2005-10-05 Capacitive electrode having semiconductor layers with an interface of separated grain boundaries
US11/878,475 US7511327B2 (en) 2002-02-14 2007-07-25 Capacitive electrode having semiconductor layers with an interface of separated grain boundaries
US12/328,046 US7800153B2 (en) 2002-02-14 2008-12-04 Capacitive electrode having semiconductor layers with an interface of separated grain boundaries

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002036129A JP4012411B2 (ja) 2002-02-14 2002-02-14 半導体装置およびその製造方法

Publications (3)

Publication Number Publication Date
JP2003243534A JP2003243534A (ja) 2003-08-29
JP2003243534A5 JP2003243534A5 (enExample) 2005-03-17
JP4012411B2 true JP4012411B2 (ja) 2007-11-21

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JP2002036129A Expired - Fee Related JP4012411B2 (ja) 2002-02-14 2002-02-14 半導体装置およびその製造方法

Country Status (2)

Country Link
US (5) US6833577B2 (enExample)
JP (1) JP4012411B2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11532696B2 (en) 2019-03-29 2022-12-20 Samsung Electronics Co., Ltd. Semiconductor devices including capacitor and methods of manufacturing the semiconductor devices

Families Citing this family (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4012411B2 (ja) * 2002-02-14 2007-11-21 株式会社ルネサステクノロジ 半導体装置およびその製造方法
JP4563655B2 (ja) 2003-04-23 2010-10-13 株式会社日立製作所 半導体装置及びその製造方法
JP2005032800A (ja) * 2003-07-08 2005-02-03 Renesas Technology Corp 半導体装置の製造方法
KR100725690B1 (ko) * 2003-07-08 2007-06-07 마츠시타 덴끼 산교 가부시키가이샤 반도체장치 및 그 제조방법
JP2005129672A (ja) * 2003-10-23 2005-05-19 Nec Electronics Corp 半導体装置及びその製造方法
KR100555533B1 (ko) * 2003-11-27 2006-03-03 삼성전자주식회사 실린더형 스토리지 전극을 포함하는 반도체 메모리 소자및 그 제조방법
JP2005175003A (ja) * 2003-12-08 2005-06-30 Matsushita Electric Ind Co Ltd デカップリングコンデンサ及び半導体集積回路
KR100519777B1 (ko) 2003-12-15 2005-10-07 삼성전자주식회사 반도체 소자의 캐패시터 및 그 제조 방법
JP4559757B2 (ja) * 2004-03-18 2010-10-13 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US6972985B2 (en) * 2004-05-03 2005-12-06 Unity Semiconductor Corporation Memory element having islands
KR100645041B1 (ko) * 2004-07-12 2006-11-10 삼성전자주식회사 엠아이엠 캐패시터를 갖는 반도체 소자 및 그 형성 방법
KR100634509B1 (ko) * 2004-08-20 2006-10-13 삼성전자주식회사 3차원 반도체 캐패시터 및 그 제조 방법
KR100604911B1 (ko) * 2004-10-20 2006-07-28 삼성전자주식회사 하부전극 콘택을 갖는 반도체 메모리 소자 및 그 제조방법
FR2890982B1 (fr) * 2005-09-21 2008-05-02 St Microelectronics Sa Procede de realisation d'une couche dielectrique sur un materiau porteur et un circuit integre comprenant un condensateur incorporant une couche dielectrique
KR100832005B1 (ko) * 2006-06-29 2008-05-26 주식회사 하이닉스반도체 캐패시터 및 그 제조 방법
KR100778227B1 (ko) * 2006-08-23 2007-11-20 동부일렉트로닉스 주식회사 반도체 소자 및 그 제조방법
KR100854925B1 (ko) * 2006-12-21 2008-08-27 동부일렉트로닉스 주식회사 반도체 소자 및 그 제조방법
JP2008166563A (ja) 2006-12-28 2008-07-17 Elpida Memory Inc 半導体装置および半導体装置の製造方法
JP4400626B2 (ja) 2007-01-31 2010-01-20 エルピーダメモリ株式会社 半導体装置及び半導体装置の製造方法
US20080272421A1 (en) * 2007-05-02 2008-11-06 Micron Technology, Inc. Methods, constructions, and devices including tantalum oxide layers
KR20090010486A (ko) * 2007-07-23 2009-01-30 삼성전자주식회사 반도체 메모리 소자 및 그 형성방법
JP5057957B2 (ja) * 2007-12-17 2012-10-24 株式会社東芝 半導体装置及びその製造方法
JP2010114409A (ja) * 2008-10-10 2010-05-20 Sony Corp Ｓｏｉ基板とその製造方法、固体撮像装置とその製造方法、および撮像装置
KR101036744B1 (ko) * 2009-01-29 2011-05-24 주식회사 하이닉스반도체 반도체 메모리 소자의 제조 방법
JP2011044488A (ja) * 2009-08-19 2011-03-03 Elpida Memory Inc 半導体装置およびその製造方法
KR20110044489A (ko) * 2009-10-23 2011-04-29 삼성전자주식회사 유전층을 포함하는 반도체 구조물, 이를 이용하는 커패시터 및 반도체 구조물의 형성 방법
CN101807517B (zh) * 2010-02-25 2011-09-21 中国科学院上海微系统与信息技术研究所 形成铜互连mim电容器结构的方法
US8803286B2 (en) * 2010-11-05 2014-08-12 Taiwan Semiconductor Manufacturing Company, Ltd. Low cost metal-insulator-metal capacitors
JP2013058559A (ja) * 2011-09-07 2013-03-28 Tokyo Electron Ltd 半導体装置の製造方法及び基板処理システム
US9825040B2 (en) 2013-12-31 2017-11-21 Taiwan Semiconductor Manufacturing Company Limited Semiconductor arrangement with capacitor and method of fabricating the same
US9768109B2 (en) * 2015-09-22 2017-09-19 Qualcomm Incorporated Integrated circuits (ICS) on a glass substrate
US10177152B1 (en) * 2017-07-21 2019-01-08 Micron Technology, Inc. Integrated assemblies comprising stud-type capacitors
JP7189814B2 (ja) * 2019-03-18 2022-12-14 キオクシア株式会社 半導体記憶装置
US11282815B2 (en) 2020-01-14 2022-03-22 Micron Technology, Inc. Methods of forming microelectronic devices, and related microelectronic devices and electronic systems
CN113517288B (zh) * 2020-04-10 2024-03-29 长鑫存储技术有限公司 半导体结构及其形成方法
US11705367B2 (en) 2020-06-18 2023-07-18 Micron Technology, Inc. Methods of forming microelectronic devices, and related microelectronic devices, memory devices, electronic systems, and additional methods
US11380669B2 (en) 2020-06-18 2022-07-05 Micron Technology, Inc. Methods of forming microelectronic devices
US11557569B2 (en) 2020-06-18 2023-01-17 Micron Technology, Inc. Microelectronic devices including source structures overlying stack structures, and related electronic systems
US11563018B2 (en) 2020-06-18 2023-01-24 Micron Technology, Inc. Microelectronic devices, and related methods, memory devices, and electronic systems
US11699652B2 (en) 2020-06-18 2023-07-11 Micron Technology, Inc. Microelectronic devices and electronic systems
US11335602B2 (en) 2020-06-18 2022-05-17 Micron Technology, Inc. Methods of forming microelectronic devices, and related microelectronic devices and electronic systems
KR102860346B1 (ko) * 2020-07-31 2025-09-16 주식회사 원익아이피에스 박막 증착 방법
US11417676B2 (en) 2020-08-24 2022-08-16 Micron Technology, Inc. Methods of forming microelectronic devices and memory devices, and related microelectronic devices, memory devices, and electronic systems
US11825658B2 (en) 2020-08-24 2023-11-21 Micron Technology, Inc. Methods of forming microelectronic devices and memory devices
KR102764319B1 (ko) * 2020-09-02 2025-02-07 삼성전자주식회사 반도체 소자 및 이를 포함하는 반도체 장치
US11751408B2 (en) 2021-02-02 2023-09-05 Micron Technology, Inc. Methods of forming microelectronic devices, and related microelectronic devices, memory devices, and electronic systems

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5605733A (en) * 1992-01-22 1997-02-25 Hitachi, Ltd. Magnetic recording medium, method for its production, and system for its use
JP2636755B2 (ja) 1994-11-09 1997-07-30 日本電気株式会社 半導体装置および半導体装置の製造方法
US6075691A (en) * 1997-03-06 2000-06-13 Lucent Technologies Inc. Thin film capacitors and process for making them
US6635523B1 (en) * 1997-12-04 2003-10-21 Fujitsu Limited Semiconductor device and method of manufacturing the same
JP2000012796A (ja) 1998-06-19 2000-01-14 Hitachi Ltd 半導体装置ならびにその製造方法および製造装置
US6348705B1 (en) * 1999-12-22 2002-02-19 Advanced Technology Materials, Inc. Low temperature process for high density thin film integrated capacitors and amorphously frustrated ferroelectric materials therefor
US6461931B1 (en) * 2000-08-29 2002-10-08 Micron Technology, Inc. Thin dielectric films for DRAM storage capacitors
JP3624822B2 (ja) 2000-11-22 2005-03-02 株式会社日立製作所 半導体装置およびその製造方法
JP4012411B2 (ja) * 2002-02-14 2007-11-21 株式会社ルネサステクノロジ 半導体装置およびその製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11532696B2 (en) 2019-03-29 2022-12-20 Samsung Electronics Co., Ltd. Semiconductor devices including capacitor and methods of manufacturing the semiconductor devices
US11929392B2 (en) 2019-03-29 2024-03-12 Samsung Electronics Co., Ltd. Semiconductor devices including capacitor and methods of manufacturing the semiconductor devices
US12356642B2 (en) 2019-03-29 2025-07-08 Samsung Electronics Co., Ltd. Semiconductor devices including capacitor and methods of manufacturing the semiconductor devices

Also Published As

Publication number Publication date
US20080035979A1 (en) 2008-02-14
US7265407B2 (en) 2007-09-04
JP2003243534A (ja) 2003-08-29
US20060027851A1 (en) 2006-02-09
US20030151083A1 (en) 2003-08-14
US6833577B2 (en) 2004-12-21
US20040212000A1 (en) 2004-10-28
US7511327B2 (en) 2009-03-31
US7800153B2 (en) 2010-09-21
US6955959B2 (en) 2005-10-18
US20090085086A1 (en) 2009-04-02

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