JP2001338988A5 - - Google Patents

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JP2001338988A5
JP2001338988A5 JP2000159544A JP2000159544A JP2001338988A5 JP 2001338988 A5 JP2001338988 A5 JP 2001338988A5 JP 2000159544 A JP2000159544 A JP 2000159544A JP 2000159544 A JP2000159544 A JP 2000159544A JP 2001338988 A5 JP2001338988 A5 JP 2001338988A5
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JP
Japan
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JP2000159544A
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JP2001338988A (ja
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Priority to JP2000159544A priority Critical patent/JP2001338988A/ja
Priority claimed from JP2000159544A external-priority patent/JP2001338988A/ja
Priority to TW090107891A priority patent/TW502443B/zh
Priority to US09/824,225 priority patent/US6724019B2/en
Priority to KR1020010022292A priority patent/KR100783980B1/ko
Publication of JP2001338988A publication Critical patent/JP2001338988A/ja
Priority to US10/738,544 priority patent/US6995054B2/en
Publication of JP2001338988A5 publication Critical patent/JP2001338988A5/ja
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JP2000159544A 2000-05-25 2000-05-25 半導体装置及びその製造方法 Pending JP2001338988A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2000159544A JP2001338988A (ja) 2000-05-25 2000-05-25 半導体装置及びその製造方法
TW090107891A TW502443B (en) 2000-05-25 2001-04-02 Semiconductor device and manufacturing method
US09/824,225 US6724019B2 (en) 2000-05-25 2001-04-03 Multi-layered, single crystal field effect transistor
KR1020010022292A KR100783980B1 (ko) 2000-05-25 2001-04-25 반도체 장치 및 그 제조 방법
US10/738,544 US6995054B2 (en) 2000-05-25 2003-12-18 Method of manufacturing a semiconductor device

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Application Number Priority Date Filing Date Title
JP2000159544A JP2001338988A (ja) 2000-05-25 2000-05-25 半導体装置及びその製造方法

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JP2001338988A JP2001338988A (ja) 2001-12-07
JP2001338988A5 true JP2001338988A5 (ja) 2006-03-30

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JP2000159544A Pending JP2001338988A (ja) 2000-05-25 2000-05-25 半導体装置及びその製造方法

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US (2) US6724019B2 (ja)
JP (1) JP2001338988A (ja)
KR (1) KR100783980B1 (ja)
TW (1) TW502443B (ja)

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