JP2001267473A - 半導体装置およびその製造方法 - Google Patents

半導体装置およびその製造方法

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Publication number
JP2001267473A
JP2001267473A JP2000076709A JP2000076709A JP2001267473A JP 2001267473 A JP2001267473 A JP 2001267473A JP 2000076709 A JP2000076709 A JP 2000076709A JP 2000076709 A JP2000076709 A JP 2000076709A JP 2001267473 A JP2001267473 A JP 2001267473A
Authority
JP
Japan
Prior art keywords
main surface
chip
substrate
semiconductor chip
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000076709A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001267473A5 (enExample
Inventor
Hideko Ando
英子 安藤
Hiroshi Kikuchi
広 菊地
Ikuo Yoshida
育生 吉田
Toshihiko Sato
俊彦 佐藤
Tomo Shimizu
朋 清水
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2000076709A priority Critical patent/JP2001267473A/ja
Priority to KR1020010010284A priority patent/KR20010091916A/ko
Priority to US09/800,589 priority patent/US6433412B2/en
Priority to TW090105543A priority patent/TW498522B/zh
Publication of JP2001267473A publication Critical patent/JP2001267473A/ja
Publication of JP2001267473A5 publication Critical patent/JP2001267473A5/ja
Pending legal-status Critical Current

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    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901Structure
    • H01L2924/1904Component type
    • H01L2924/19041Component type being a capacitor
    • HELECTRICITY
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    • H01L2924/1901Structure
    • H01L2924/1904Component type
    • H01L2924/19043Component type being a resistor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
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    • H01L2924/191Disposition
    • H01L2924/19101Disposition of discrete passive components
    • H01L2924/19105Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2924/30Technical effects
    • H01L2924/35Mechanical effects
    • H01L2924/351Thermal stress

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US8089146B2 (en) 2006-02-28 2012-01-03 Fujitsu Limited Semiconductor device and heat radiation member
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JP2012129355A (ja) * 2010-12-15 2012-07-05 Fujitsu Semiconductor Ltd 半導体装置及び半導体装置の製造方法
JP2014017371A (ja) * 2012-07-09 2014-01-30 Fujitsu Semiconductor Ltd 半導体装置及び半導体装置製造方法
JP2017037980A (ja) * 2015-08-11 2017-02-16 株式会社ソシオネクスト 半導体装置、半導体装置の製造方法及び電子装置
WO2018164160A1 (ja) * 2017-03-10 2018-09-13 株式会社村田製作所 モジュール
WO2020162417A1 (ja) * 2019-02-04 2020-08-13 株式会社ソニー・インタラクティブエンタテインメント 電子機器、半導体装置、絶縁シート、及び半導体装置の製造方法
JPWO2020162417A1 (ja) * 2019-02-04 2021-12-09 株式会社ソニー・インタラクティブエンタテインメント 電子機器、半導体装置、絶縁シート、及び半導体装置の製造方法
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JP2023118943A (ja) * 2019-02-04 2023-08-25 株式会社ソニー・インタラクティブエンタテインメント 半導体装置、絶縁シート、及び半導体装置の製造方法
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