HK85994A - Hydroxypolyimides and high temperature resistant positive photoresists - Google Patents

Hydroxypolyimides and high temperature resistant positive photoresists

Info

Publication number
HK85994A
HK85994A HK85994A HK85994A HK85994A HK 85994 A HK85994 A HK 85994A HK 85994 A HK85994 A HK 85994A HK 85994 A HK85994 A HK 85994A HK 85994 A HK85994 A HK 85994A
Authority
HK
Hong Kong
Prior art keywords
aromatic
radical
membered ring
hydroxypolyimides
high temperature
Prior art date
Application number
HK85994A
Other languages
English (en)
Inventor
Dinesh N Khanna
Werner H Dr Mueller
Original Assignee
Hoechst Celanese Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoechst Celanese Corp filed Critical Hoechst Celanese Corp
Publication of HK85994A publication Critical patent/HK85994A/xx

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/1057Polyimides containing other atoms than carbon, hydrogen, nitrogen or oxygen in the main chain
    • C08G73/1064Polyimides containing other atoms than carbon, hydrogen, nitrogen or oxygen in the main chain containing sulfur
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/1039Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors comprising halogen-containing substituents
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/1067Wholly aromatic polyimides, i.e. having both tetracarboxylic and diamino moieties aromatically bound
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/1067Wholly aromatic polyimides, i.e. having both tetracarboxylic and diamino moieties aromatically bound
    • C08G73/1071Wholly aromatic polyimides containing oxygen in the form of ether bonds in the main chain
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/1075Partially aromatic polyimides
    • C08G73/1078Partially aromatic polyimides wholly aromatic in the diamino moiety
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/016Diazonium salts or compounds
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/022Quinonediazides
    • G03F7/023Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0387Polyamides or polyimides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
  • Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Paints Or Removers (AREA)
HK85994A 1987-07-21 1994-08-18 Hydroxypolyimides and high temperature resistant positive photoresists HK85994A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/076,098 US4927736A (en) 1987-07-21 1987-07-21 Hydroxy polyimides and high temperature positive photoresists therefrom

Publications (1)

Publication Number Publication Date
HK85994A true HK85994A (en) 1994-08-26

Family

ID=22129912

Family Applications (1)

Application Number Title Priority Date Filing Date
HK85994A HK85994A (en) 1987-07-21 1994-08-18 Hydroxypolyimides and high temperature resistant positive photoresists

Country Status (7)

Country Link
US (1) US4927736A (xx)
EP (1) EP0300326B1 (xx)
JP (1) JP2935994B2 (xx)
KR (1) KR0123891B1 (xx)
AT (1) ATE90704T1 (xx)
DE (1) DE3881771D1 (xx)
HK (1) HK85994A (xx)

Families Citing this family (126)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5037720A (en) * 1987-07-21 1991-08-06 Hoechst Celanese Corporation Hydroxylated aromatic polyamide polymer containing bound naphthoquinone diazide photosensitizer, method of making and use
US5268193A (en) * 1988-06-28 1993-12-07 Amoco Corporation Low dielectric constant, low moisture uptake polyimides and copolyimides for interlevel dielectrics and substrate coatings
US5206091A (en) * 1988-06-28 1993-04-27 Amoco Corporation Low dielectric constant, low moisture uptake polyimides and copolyimides for interlevel dielectrics and substrate coatings
US4996254A (en) * 1988-10-11 1991-02-26 Ethyl Corporation Production of electronic coatings by spin coating a partially fluorinated polyamic acid composition
US5037673A (en) * 1988-10-11 1991-08-06 Ethyl Corporation Method of spin coating a solution of partially fluorinated polyamic acid polymer and cycloaliphatic ketone solvent
US4997869A (en) * 1988-10-11 1991-03-05 Ethyl Corporation Production of electronic coatings by spin coating a partially fluorinated polyimide composition
US5138424A (en) * 1988-11-07 1992-08-11 Brewer Science, Inc. Positive working polyamic acid/imide photoresist compositions and their use as dielectrics
US5024922A (en) * 1988-11-07 1991-06-18 Moss Mary G Positive working polyamic acid/imide and diazoquinone photoresist with high temperature pre-bake
EP0378156A3 (en) * 1989-01-09 1992-02-26 Nitto Denko Corporation Positively photosensitive polyimide composition
DE58908012D1 (de) * 1989-03-20 1994-08-11 Siemens Ag Lichtempfindliches Gemisch.
US5057399A (en) * 1989-03-31 1991-10-15 Tony Flaim Method for making polyimide microlithographic compositions soluble in alkaline media
WO1990012051A1 (en) * 1989-03-30 1990-10-18 Brewer Science, Inc. Base-soluble polyimide release layers for use in microlithographic processing
EP0391200B1 (de) * 1989-04-06 1995-10-11 Siemens Aktiengesellschaft Herstellung hochwärmebeständiger Reliefstrukturen
JP2906637B2 (ja) * 1989-10-27 1999-06-21 日産化学工業株式会社 ポジ型感光性ポリイミド樹脂組成物
US5288588A (en) * 1989-10-27 1994-02-22 Nissan Chemical Industries Ltd. Positive photosensitive polyimide resin composition comprising an o-quinone diazide as a photosensitive compound
KR950011927B1 (ko) * 1989-12-07 1995-10-12 가부시끼가이샤 도시바 감광성 조성물 및 수지봉지형 반도체장치
US5114826A (en) * 1989-12-28 1992-05-19 Ibm Corporation Photosensitive polyimide compositions
EP0449117A3 (en) * 1990-03-23 1992-05-06 Matsushita Electric Industrial Co., Ltd. Organic polymer and preparation and use thereof
DE59010552D1 (de) * 1990-03-29 1996-12-05 Siemens Ag Hochwärmebeständige Negativresists und Verfahren zur Herstellung hochwärmebeständiger Reliefstrukturen
JPH0415226A (ja) * 1990-05-10 1992-01-20 Chisso Corp ヒドロキシフェニル基を有する感光性耐熱重合体
US5231160A (en) * 1990-09-07 1993-07-27 Mitsui Toatsu Chemicals, Incorporated Aromatic diamine compound, preparation process of same and polyimide prepared from same
EP0478321B1 (en) * 1990-09-28 1997-11-12 Kabushiki Kaisha Toshiba Photosenstive resin composition for forming polyimide film pattern and method of forming polyimide film pattern
JP2890213B2 (ja) * 1991-02-25 1999-05-10 チッソ株式会社 感光性重合体組成物及びパターンの形成方法
US5851736A (en) * 1991-03-05 1998-12-22 Nitto Denko Corporation Heat-resistant photoresist composition, photosensitive substrate, and process for forming heat-resistant positive or negative pattern
DE69222203T2 (de) * 1991-03-05 1998-01-15 Nitto Denko Corp Hitzebeständige, positiv arbeitende Photoresistzusammensetzung, lichtempfindliches Substrat, und Verfahren zur Herstellung eines hitzebeständigen positiven Musters
US5302489A (en) * 1991-10-29 1994-04-12 E. I. Du Pont De Nemours And Company Positive photoresist compositions containing base polymer which is substantially insoluble at pH between 7 and 10, quinonediazide acid generator and silanol solubility enhancer
DE69308671T2 (de) * 1992-07-22 1997-10-16 Asahi Chemical Ind Photoempfindliche Polyimid-Zusammensetzung
US5290418A (en) * 1992-09-24 1994-03-01 Applied Biosystems, Inc. Viscous electrophoresis polymer medium and method
KR0134753B1 (ko) * 1993-02-26 1998-04-18 사토 후미오 폴리아미드산 조성물
JPH06308730A (ja) * 1993-04-26 1994-11-04 Chisso Corp 感光性ポリイミド前駆体組成物
TW502135B (en) 1996-05-13 2002-09-11 Sumitomo Bakelite Co Positive type photosensitive resin composition and process for preparing polybenzoxazole resin film by using the same
JP3321548B2 (ja) * 1996-06-17 2002-09-03 株式会社日立製作所 感光性ポリイミド前駆体組成物、およびそれを用いたパターン形成方法
JP3190967B2 (ja) 1996-12-16 2001-07-23 住友ベークライト株式会社 アルカリ性水溶液及び感光性樹脂組成物のパターン形成方法
US6207356B1 (en) 1996-12-31 2001-03-27 Sumitomo Bakelite Company Limited Method for the pattern-processing of photosensitive resin composition
DE69706396T2 (de) 1997-01-03 2002-04-18 Sumitomo Bakelite Co. Ltd., Tokio/Tokyo Verfahren zur Bebilderung einer photoempfindlichen Harzzusammensetzung
KR19980079775A (ko) * 1997-03-03 1998-11-25 이사오 우치가사키 내열성 감광성 중합체조성물, 패턴의 제조법 및 반도체 장치
TW434807B (en) * 1997-09-18 2001-05-16 Siemens Ag The production of structurized protecting and isolating layers
DE59804641D1 (de) 1997-09-24 2002-08-08 Infineon Technologies Ag o-Nitro(thio)phenolderivate und deren Herstellung
DE59802423D1 (de) * 1997-09-24 2002-01-24 Infineon Technologies Ag Bis-o-amino(thio)phenole und deren Herstellung
DE59802416D1 (de) * 1997-09-24 2002-01-24 Infineon Technologies Ag Bis-o-amino(thio)phenole und deren Herstellung
TW505984B (en) * 1997-12-12 2002-10-11 Applied Materials Inc Method of etching patterned layers useful as masking during subsequent etching or for damascene structures
US6004722A (en) * 1998-04-06 1999-12-21 Chartered Semiconductor Manufacturing Ltd. Hydrolytically stable organic polymer material for organic polymer anti-reflective (ARC) layer
JP3509612B2 (ja) 1998-05-29 2004-03-22 日立化成デュポンマイクロシステムズ株式会社 感光性重合体組成物、レリーフパターンの製造法及び電子部品
JP3426531B2 (ja) * 1998-10-30 2003-07-14 日立化成デュポンマイクロシステムズ株式会社 感光性重合体組成物、レリーフパターンの製造法及び電子部品
JP4529252B2 (ja) 1999-09-28 2010-08-25 日立化成デュポンマイクロシステムズ株式会社 ポジ型感光性樹脂組成物、パターンの製造法及び電子部品
CN1208683C (zh) 1999-11-30 2005-06-29 日产化学工业株式会社 正型感光性聚酰亚胺树脂组合物
KR100422971B1 (ko) 1999-12-29 2004-03-12 삼성전자주식회사 나프톨 구조를 가진 이온형 광산발생제 및 이를 이용한감광성 폴리이미드 조성물
WO2002023276A1 (en) * 2000-09-12 2002-03-21 Pi R & D Co., Ltd. Negative photosensitive polyimide composition and method of forming image from the same
JP4390028B2 (ja) 2000-10-04 2009-12-24 日産化学工業株式会社 ポジ型感光性ポリイミド樹脂組成物
US7923173B1 (en) * 2000-10-19 2011-04-12 Illinois Tool Works Inc. Photo definable polyimide film used as an embossing surface
JP3773845B2 (ja) 2000-12-29 2006-05-10 三星電子株式会社 ポジティブ型感光性ポリイミド前駆体およびこれを含む組成物
DE10104726A1 (de) * 2001-02-02 2002-08-08 Siemens Solar Gmbh Verfahren zur Strukturierung einer auf einem Trägermaterial aufgebrachten Oxidschicht
DE10112561C2 (de) * 2001-03-15 2003-12-18 Infineon Technologies Ag Verfahren zur Erzeugung von auf einem Substrat haftenden porösen organischen Schichten
US6582879B2 (en) 2001-03-27 2003-06-24 Korea Research Institute Of Chemical Technology Reactive photo acid-generating agent and heat-resistant photoresist composition with polyamide precursor
JP4065424B2 (ja) 2001-08-22 2008-03-26 ハンヤン ハク ウォン カンパニー,リミテッド 架橋スルホン化ポリイミドフィルム
TW200300772A (en) 2001-12-11 2003-06-16 Kaneka Corp Polyimide precursor, manufacturing method thereof, and resin composition using polyimide precursor
US7261997B2 (en) * 2002-01-17 2007-08-28 Brewer Science Inc. Spin bowl compatible polyamic acids/imides as wet developable polymer binders for anti-reflective coatings
KR100532590B1 (ko) * 2002-11-07 2005-12-01 삼성전자주식회사 감광성 폴리이미드 전구체용 가용성 폴리이미드 및, 이를포함하는 감광성 폴리이드 전구체 조성물
EP1630605B1 (en) * 2003-06-02 2017-10-11 Toray Industries, Inc. Photosensitive resin composition
US7364835B2 (en) * 2003-10-15 2008-04-29 Brewer Science Inc. Developer-soluble materials and methods of using the same in via-first dual damascene applications
JP2005196130A (ja) * 2003-12-12 2005-07-21 Hitachi Cable Ltd 感光性ポリイミド樹脂組成物、それを用いた絶縁膜、絶縁膜の製造方法および絶縁膜を使用した電子部品
US20070207406A1 (en) * 2004-04-29 2007-09-06 Guerrero Douglas J Anti-reflective coatings using vinyl ether crosslinkers
US20050255410A1 (en) * 2004-04-29 2005-11-17 Guerrero Douglas J Anti-reflective coatings using vinyl ether crosslinkers
US7638254B2 (en) 2004-05-07 2009-12-29 Hitachi Chemical Dupont Microsystems Ltd Positive photosensitive resin composition, method for forming pattern, and electronic part
WO2005109099A1 (ja) 2004-05-07 2005-11-17 Hitachi Chemical Dupont Microsystems Ltd. ポジ型感光性樹脂組成物、パターンの製造方法及び電子部品
CA2594335A1 (en) * 2005-01-07 2006-07-13 Sensory Analytics Anodizing system with a coating thickness monitor and an anodized product
WO2007034604A1 (ja) * 2005-09-22 2007-03-29 Hitachi Chemical Dupont Microsystems Ltd. ネガ型感光性樹脂組成物、パターン形成方法及び電子部品
KR20140009592A (ko) * 2006-03-16 2014-01-22 아사히 가라스 가부시키가이샤 네거티브형 감광성 함불소 방향족계 수지 조성물
TWI306882B (en) * 2006-05-25 2009-03-01 Ind Tech Res Inst Thermoplastic polyimide composition and method of making double-sided flexible copper clad laminate using the same
US20100159217A1 (en) * 2006-06-20 2010-06-24 Hitachi Chemical Dupont Microsystems, Ltd Negative-type photosensitive resin composition, method for forming patterns, and electronic parts
JP4969941B2 (ja) * 2006-08-02 2012-07-04 ソニーケミカル&インフォメーションデバイス株式会社 ポリイミド組成物、フレキシブル配線板及びフレキシブル配線板の製造方法
US7914974B2 (en) 2006-08-18 2011-03-29 Brewer Science Inc. Anti-reflective imaging layer for multiple patterning process
US11339430B2 (en) 2007-07-10 2022-05-24 Life Technologies Corporation Methods and apparatus for measuring analytes using large scale FET arrays
US7948015B2 (en) 2006-12-14 2011-05-24 Life Technologies Corporation Methods and apparatus for measuring analytes using large scale FET arrays
US8349167B2 (en) 2006-12-14 2013-01-08 Life Technologies Corporation Methods and apparatus for detecting molecular interactions using FET arrays
US8262900B2 (en) * 2006-12-14 2012-09-11 Life Technologies Corporation Methods and apparatus for measuring analytes using large scale FET arrays
JP5434588B2 (ja) 2007-03-12 2014-03-05 日立化成デュポンマイクロシステムズ株式会社 感光性樹脂組成物、該樹脂組成物を用いたパターン硬化膜の製造方法及び電子部品
US20100035182A1 (en) * 2007-04-10 2010-02-11 Nippon Kayaku Kabushiki Kaisha Photosensitive resin composition
KR101275474B1 (ko) * 2007-10-29 2013-06-14 히다치 가세이듀퐁 마이쿠로시스데무즈 가부시키가이샤 포지티브형 감광성 수지 조성물, 패턴의 제조방법 및 전자부품
EP2245512B1 (en) * 2008-01-29 2019-09-11 Brewer Science, Inc. On-track process for patterning hardmask by multiple dark field exposures
JP5320639B2 (ja) * 2008-02-13 2013-10-23 日立電線株式会社 絶縁電線
KR20090096365A (ko) 2008-03-07 2009-09-10 주식회사 엘지화학 포지티브형 감광성 폴리이미드 조성물
JP4849362B2 (ja) 2008-03-14 2012-01-11 ナガセケムテックス株式会社 感放射線性樹脂組成物
JP4911116B2 (ja) * 2008-05-22 2012-04-04 日立化成デュポンマイクロシステムズ株式会社 半導体装置及びその製造方法、感光性樹脂組成物並びに電子部品
KR101113037B1 (ko) * 2008-07-15 2012-02-27 주식회사 엘지화학 포지티브형 감광성 수지 조성물
US8367283B2 (en) * 2008-07-22 2013-02-05 Sumitomo Bakelite Company, Ltd. Positive photosensitive resin composition, cured film, protecting film, insulating film and semiconductor and display devices using the same
US20100137143A1 (en) 2008-10-22 2010-06-03 Ion Torrent Systems Incorporated Methods and apparatus for measuring analytes
US20100301398A1 (en) 2009-05-29 2010-12-02 Ion Torrent Systems Incorporated Methods and apparatus for measuring analytes
US9640396B2 (en) * 2009-01-07 2017-05-02 Brewer Science Inc. Spin-on spacer materials for double- and triple-patterning lithography
US20120261274A1 (en) 2009-05-29 2012-10-18 Life Technologies Corporation Methods and apparatus for measuring analytes
US8776573B2 (en) 2009-05-29 2014-07-15 Life Technologies Corporation Methods and apparatus for measuring analytes
KR101660315B1 (ko) * 2010-02-11 2016-09-28 삼성전자 주식회사 고분자 및 이를 포함하는 조성물과 필름
JP5952813B2 (ja) 2010-06-30 2016-07-13 ライフ テクノロジーズ コーポレーション Isfetアレイをテストする方法及び装置
TWI547688B (zh) 2010-06-30 2016-09-01 生命技術公司 離子感測電荷累積電路及方法
US8487790B2 (en) 2010-06-30 2013-07-16 Life Technologies Corporation Chemical detection circuit including a serializer circuit
US11307166B2 (en) 2010-07-01 2022-04-19 Life Technologies Corporation Column ADC
TWI527245B (zh) 2010-07-03 2016-03-21 生命技術公司 具有微摻雜汲極之化學感測器
JP2013533508A (ja) * 2010-07-14 2013-08-22 エルジー・ケム・リミテッド ポジティブ型感光性樹脂組成物およびこれを含む有機発光素子ブラックバンク
US9618475B2 (en) 2010-09-15 2017-04-11 Life Technologies Corporation Methods and apparatus for measuring analytes
WO2012039812A1 (en) 2010-09-24 2012-03-29 Life Technologies Corporation Matched pair transistor circuits
KR101910220B1 (ko) 2011-06-15 2018-10-19 히다치 가세이듀퐁 마이쿠로시스데무즈 가부시키가이샤 감광성 수지 조성물, 그 수지 조성물을 사용한 패턴 경화막의 제조 방법 및 전자 부품
US9970984B2 (en) 2011-12-01 2018-05-15 Life Technologies Corporation Method and apparatus for identifying defects in a chemical sensor array
US20140296408A1 (en) * 2012-01-13 2014-10-02 Lg Chem, Ltd. Insulation Material for Electronic Device
EP2806428A4 (en) * 2012-01-13 2015-08-12 Lg Chemical Ltd INSULATING MATERIAL FOR AN ELECTRONIC DEVICE
US8786331B2 (en) 2012-05-29 2014-07-22 Life Technologies Corporation System for reducing noise in a chemical sensor array
WO2014051050A1 (ja) * 2012-09-27 2014-04-03 三菱瓦斯化学株式会社 ポリイミド樹脂組成物
US9080968B2 (en) 2013-01-04 2015-07-14 Life Technologies Corporation Methods and systems for point of use removal of sacrificial material
US9841398B2 (en) 2013-01-08 2017-12-12 Life Technologies Corporation Methods for manufacturing well structures for low-noise chemical sensors
US8963216B2 (en) 2013-03-13 2015-02-24 Life Technologies Corporation Chemical sensor with sidewall spacer sensor surface
WO2014149779A1 (en) 2013-03-15 2014-09-25 Life Technologies Corporation Chemical device with thin conductive element
CN105264366B (zh) 2013-03-15 2019-04-16 生命科技公司 具有一致传感器表面区域的化学传感器
US9835585B2 (en) 2013-03-15 2017-12-05 Life Technologies Corporation Chemical sensor with protruded sensor surface
US20140336063A1 (en) 2013-05-09 2014-11-13 Life Technologies Corporation Windowed Sequencing
US10458942B2 (en) 2013-06-10 2019-10-29 Life Technologies Corporation Chemical sensor array having multiple sensors per well
KR101705755B1 (ko) 2013-12-19 2017-02-10 제일모직 주식회사 포지티브형 감광성 수지 조성물, 감광성 수지막, 및 표시 소자
CN103834168B (zh) 2014-02-25 2016-09-07 广东生益科技股份有限公司 一种无卤阻燃型树脂组合物
WO2016051809A1 (ja) 2014-10-02 2016-04-07 日立化成デュポンマイクロシステムズ株式会社 ポジ型感光性樹脂組成物、パターン硬化膜の製造方法、硬化物、層間絶縁膜、カバーコート層、表面保護膜及び電子部品
CN107407656B (zh) 2014-12-18 2020-04-07 生命科技公司 使用大规模 fet 阵列测量分析物的方法和装置
WO2016100486A1 (en) 2014-12-18 2016-06-23 Life Technologies Corporation High data rate integrated circuit with transmitter configuration
US10077472B2 (en) 2014-12-18 2018-09-18 Life Technologies Corporation High data rate integrated circuit with power management
CN105778414B (zh) 2014-12-26 2018-05-29 广东生益科技股份有限公司 一种环氧树脂组合物以及使用它的预浸料和层压板
CN105778413B (zh) 2014-12-26 2018-11-27 广东生益科技股份有限公司 一种无卤环氧树脂组合物以及使用它的预浸料和层压板
CN106916282B (zh) 2015-12-28 2019-07-26 广东生益科技股份有限公司 一种环氧树脂组合物以及使用其的预浸料和层压板
CN107793565B (zh) * 2017-11-03 2020-11-17 杭州超通科技有限公司 一种光敏聚酰亚胺及其制备方法
KR20200057146A (ko) 2018-11-15 2020-05-26 나노크리스탈주식회사 폴리벤즈옥사졸 전구체, 이를 포함하는 포토레지스트 조성물 및 이를 이용한 경화막 패턴의 형성방법.
CN115232017B (zh) * 2021-03-15 2024-06-18 华为技术有限公司 一种化合物、一种树脂及其制备方法和应用

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3666709A (en) * 1968-12-14 1972-05-30 Shawa Densen Denran Kk A K A S Solvent soluble aromatic polymides and production thereof
US3692740A (en) * 1969-06-24 1972-09-19 Showa Electric Wire & Cable Co Phnolic-solvent-soluble aromatic polyamide-imide and process for producing same
US3959350A (en) * 1971-05-17 1976-05-25 E. I. Du Pont De Nemours And Company Melt-fusible linear polyimide of 2,2-bis(3,4-dicarboxyphenyl)-hexafluoropropane dianhydride
JPS49106599A (xx) * 1973-02-08 1974-10-09
JPS5166397A (ja) * 1974-12-05 1976-06-08 Furukawa Electric Co Ltd Horiimidojushinoseizohoho
US4111906A (en) * 1976-07-19 1978-09-05 Trw Inc. Polyimides prepared from perfluoroisopropylidene diamine
JPS5381532A (en) * 1976-12-28 1978-07-19 Showa Electric Wire & Cable Co Ltd Production of resin composition for hot melt coating
DE2931297A1 (de) * 1979-08-01 1981-02-19 Siemens Ag Waermebestaendige positivresists und verfahren zur herstellung waermebestaendiger reliefstrukturen
DE3372983D1 (en) * 1982-04-21 1987-09-17 Ciba Geigy Ag Radiation-sensible coating composition and its use
US4657832A (en) * 1983-05-18 1987-04-14 Ciba-Geigy Corporation Photosensitive polymers as coating materials
US4698295A (en) * 1984-11-16 1987-10-06 Ciba-Geigy Corporation Polyimides, a process for their preparation and their use, and tetracarboxylic acids and tetracarboxylic acid derivatives
JPS61285254A (ja) * 1985-06-12 1986-12-16 Hitachi Ltd 感光性重合体組成物
JPS62105307A (ja) * 1985-10-31 1987-05-15 築地索道工業株式会社 伸縮自在の照明塔

Also Published As

Publication number Publication date
JPS6460630A (en) 1989-03-07
ATE90704T1 (de) 1993-07-15
EP0300326A1 (de) 1989-01-25
KR890002281A (ko) 1989-04-10
DE3881771D1 (de) 1993-07-22
EP0300326B1 (de) 1993-06-16
KR0123891B1 (ko) 1997-11-24
JP2935994B2 (ja) 1999-08-16
US4927736A (en) 1990-05-22

Similar Documents

Publication Publication Date Title
HK85994A (en) Hydroxypolyimides and high temperature resistant positive photoresists
AU1376388A (en) Novel alpha-aminoacetophenones as photoinitiators
GB8920521D0 (en) New compositions of matter
SE8207224L (sv) Nya aromatiska aminoalkoxiderivat, deras framstellning och deras terapeutiska anvendning
FI820087L (fi) Ljuskaenslig blandning baserad pao o-naftokinondiazider och avenna framstaellt kopiermaterial
JPS5228875A (en) Mask
JPS5684708A (en) Polymerization inhibitor
BE896505A (fr) Procede de fabrication d'un polyester a poids moleculaire eleve
ES525157A0 (es) "un procedimiento para producir el complejo antibiotico m 9226"
JPS54117445A (en) Substituted phenylurea derivative, its preparation, and herbicide containing the same
JPS52138922A (en) Lens system
SU834865A1 (ru) Устройство установки схем цифровойАВТОМАТиКи B иСХОдНОЕ СОСТО НиЕ
JPS535300A (en) Photosensitive polyamide-imide prepolymer
JPS5429975A (en) Photo mask
SG42686G (en) 1,3/diaza-9-thia-anthracene-2,4-diones and photopolymerisable mixture containing these compounds
JPS55164833A (en) Sensitizer
JPS53125030A (en) Electrophotographic photosensitive material
JPS531725A (en) Throttle lever for carburetor
JPS5342829A (en) Image supporting material
FR2666331B1 (fr) Procede de conversion d'hydrocarbures aliphatiques en hydrocarbures aromatiques.
JPS5324393A (en) Polyester sulfonate-imide and its preparation
JPS5748758A (en) Variable magnification converter of copying machine
JPS5225825A (en) Preparation of indanedione azomethine pigment
JPS52129381A (en) Production of photo mask
JPS5621132A (en) Sensitizer for organic photosensitive material

Legal Events

Date Code Title Description
PF Patent in force
AS Change of ownership

Owner name: CLARIANT FINANCE (BVI) LIMITED

Free format text: FORMER OWNER(S): HOECHST CELANESE CORPORATION

AS Change of ownership

Owner name: AZ ELECTRONIC MATERIALS (JAPAN) K.K.

Free format text: FORMER OWNER(S): CLARIANT FINANCE (BVI) LIMITED

CHPA Change of a particular in the register (except of change of ownership)
PE Patent expired

Effective date: 20080711