DE69308671T2 - Photoempfindliche Polyimid-Zusammensetzung - Google Patents

Photoempfindliche Polyimid-Zusammensetzung

Info

Publication number
DE69308671T2
DE69308671T2 DE69308671T DE69308671T DE69308671T2 DE 69308671 T2 DE69308671 T2 DE 69308671T2 DE 69308671 T DE69308671 T DE 69308671T DE 69308671 T DE69308671 T DE 69308671T DE 69308671 T2 DE69308671 T2 DE 69308671T2
Authority
DE
Germany
Prior art keywords
photosensitive polyimide
polyimide composition
composition
photosensitive
polyimide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69308671T
Other languages
English (en)
Other versions
DE69308671D1 (de
Inventor
Yoshio Matsuoka
Kanichi Yokota
Yasuhiro Kataoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Asahi Kasei Corp
Asahi Chemical Industry Co Ltd
Original Assignee
Asahi Chemical Industry Co Ltd
Asahi Kasei Kogyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=16677279&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE69308671(T2) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Asahi Chemical Industry Co Ltd, Asahi Kasei Kogyo KK filed Critical Asahi Chemical Industry Co Ltd
Application granted granted Critical
Publication of DE69308671D1 publication Critical patent/DE69308671D1/de
Publication of DE69308671T2 publication Critical patent/DE69308671T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0387—Polyamides or polyimides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G03F7/037—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polyamides or polyimides
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0313—Organic insulating material
    • H05K1/032—Organic insulating material consisting of one material
    • H05K1/0346—Organic insulating material consisting of one material containing N
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/46—Manufacturing multilayer circuits
    • H05K3/4644—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
    • H05K3/4673—Application methods or materials of intermediate insulating layers not specially adapted to any one of the previous methods of adding a circuit layer
    • H05K3/4676—Single layer compositions
DE69308671T 1992-07-22 1993-07-19 Photoempfindliche Polyimid-Zusammensetzung Expired - Fee Related DE69308671T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21573292 1992-07-22

Publications (2)

Publication Number Publication Date
DE69308671D1 DE69308671D1 (de) 1997-04-17
DE69308671T2 true DE69308671T2 (de) 1997-10-16

Family

ID=16677279

Family Applications (2)

Application Number Title Priority Date Filing Date
DE69308671T Expired - Fee Related DE69308671T2 (de) 1992-07-22 1993-07-19 Photoempfindliche Polyimid-Zusammensetzung
DE69331471T Revoked DE69331471T2 (de) 1992-07-22 1993-07-19 Photoempfindliche Polyimidvorlaüferzusammensetzung

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE69331471T Revoked DE69331471T2 (de) 1992-07-22 1993-07-19 Photoempfindliche Polyimidvorlaüferzusammensetzung

Country Status (4)

Country Link
US (2) US6162580A (de)
EP (2) EP0580108B1 (de)
KR (1) KR0127278B1 (de)
DE (2) DE69308671T2 (de)

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EP0624826B1 (de) * 1993-05-14 1997-07-16 OCG Microelectronic Materials Inc. Verfahren zur Herstellung von Reliefstrukturen durch i-Linien-Bestrahlung
JP3687988B2 (ja) 1993-09-03 2005-08-24 日立化成工業株式会社 ｉ線ステッパ用感光性樹脂組成物
US5807498A (en) * 1996-03-29 1998-09-15 Alliant Techsystems Inc. Process and materials for aligning liquid crystals and liquid crystal optical elements
US5958292A (en) * 1998-05-18 1999-09-28 Elsicon Inc. Materials for inducing alignment of liquid crystals and liquid crystal optical elements
US6991834B1 (en) * 1998-12-23 2006-01-31 Elsicon, Inc. Materials for inducing alignment of liquid crystals and liquid crystal optical elements
US7005165B2 (en) * 1998-12-23 2006-02-28 Elsicon, Inc. Photosensitive polyimides for optical alignment of liquid crystals
US6610815B1 (en) * 1999-01-21 2003-08-26 Asahi Kasei Kabushiki Kaisha Polyamic acid ester
JP3949849B2 (ja) * 1999-07-19 2007-07-25 日東電工株式会社 チップサイズパッケージ用インターポーザーの製造方法およびチップサイズパッケージ用インターポーザー
DE19955969A1 (de) * 1999-11-19 2001-05-31 Inst Mikrotechnik Mainz Gmbh Verwendung von Polyimid für Haftschichten und lithographisches Verfahren zur Herstellung von Mikrobauteilen
US7261997B2 (en) * 2002-01-17 2007-08-28 Brewer Science Inc. Spin bowl compatible polyamic acids/imides as wet developable polymer binders for anti-reflective coatings
US20050255410A1 (en) 2004-04-29 2005-11-17 Guerrero Douglas J Anti-reflective coatings using vinyl ether crosslinkers
CN1980984B (zh) * 2004-07-16 2010-06-09 旭化成电子材料株式会社 聚酰胺
US7524617B2 (en) * 2004-11-23 2009-04-28 E.I. Du Pont De Nemours And Company Low-temperature curable photosensitive compositions
US7914974B2 (en) 2006-08-18 2011-03-29 Brewer Science Inc. Anti-reflective imaging layer for multiple patterning process
WO2008069812A1 (en) * 2006-12-03 2008-06-12 Central Glass Co., Ltd. Photosensitive polybenzoxazines and methods of making the same
US20100216070A1 (en) * 2006-12-04 2010-08-26 Central Glass Co., Ltd. Photosensitive Polyimides and Methods of Making the Same
US8133659B2 (en) * 2008-01-29 2012-03-13 Brewer Science Inc. On-track process for patterning hardmask by multiple dark field exposures
US9640396B2 (en) 2009-01-07 2017-05-02 Brewer Science Inc. Spin-on spacer materials for double- and triple-patterning lithography
US10725379B2 (en) 2012-12-21 2020-07-28 Hitachi Chemical Dupont Microsystems, Ltd. Polymide precursor resin composition
US9751984B2 (en) 2012-12-21 2017-09-05 Hitachi Chemical Dupont Microsystems, Ltd. Polyimide precursor, photosensitive resin composition containing said polyimide precursor, and cured-pattern-film manufacturing method and semiconductor device using said photosensitive resin composition
JP6244871B2 (ja) * 2013-12-13 2017-12-13 日立化成デュポンマイクロシステムズ株式会社 ポリイミド前駆体樹脂組成物
KR20180055875A (ko) 2016-08-22 2018-05-25 아사히 가세이 가부시키가이샤 감광성 수지 조성물 및 경화 릴리프 패턴의 제조 방법
TWI658066B (zh) * 2017-02-03 2019-05-01 台虹科技股份有限公司 聚醯亞胺聚合物以及聚醯亞胺膜
CN107011925B (zh) * 2017-05-23 2020-12-29 成都海亿科技有限公司 液晶垂直取向膜用材料及由其制备的液晶盒和制备方法
TWI658067B (zh) * 2017-11-24 2019-05-01 台虹科技股份有限公司 聚醯亞胺前驅物及其所製得之微影圖案
WO2023088869A2 (en) * 2021-11-17 2023-05-25 Merck Patent Gmbh Compositions and methods for improving metal structure fabrication by wet chemical etch

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL177718C (nl) * 1973-02-22 1985-11-01 Siemens Ag Werkwijze ter vervaardiging van reliefstructuren uit warmte-bestendige polymeren.
DE2933827A1 (de) * 1979-08-21 1981-03-12 Siemens AG, 1000 Berlin und 8000 München Verfahren zur herstellung hochwaermebestaendiger reliefstrukturen und deren verwendung.
US4548891A (en) * 1983-02-11 1985-10-22 Ciba Geigy Corporation Photopolymerizable compositions containing prepolymers with olefin double bonds and titanium metallocene photoinitiators
DE3411714A1 (de) * 1984-03-29 1985-10-10 Siemens AG, 1000 Berlin und 8000 München Verfahren zur herstellung von polyimidazol- und polyimidazopyrrolon-reliefstrukturen
JPS6173740A (ja) * 1984-09-20 1986-04-15 Asahi Chem Ind Co Ltd 感光性組成物
EP0254230A3 (de) * 1986-07-22 1988-11-23 Asahi Kasei Kogyo Kabushiki Kaisha Wärmebeständiger Photolackfilm
JPS6327828A (ja) * 1986-07-22 1988-02-05 Asahi Chem Ind Co Ltd 耐熱性フオトレジストフイルム
DE3786628T2 (de) * 1986-09-04 1994-03-24 Kanegafuchi Chemical Ind Hoch molekulare, amphiphile, photoempfindliche Photopolymere und Herstellungsverfahren.
JPH0646302B2 (ja) * 1987-06-22 1994-06-15 株式会社日立製作所 耐熱感光性重合体組成物
US4927736A (en) * 1987-07-21 1990-05-22 Hoechst Celanese Corporation Hydroxy polyimides and high temperature positive photoresists therefrom
US5037720A (en) * 1987-07-21 1991-08-06 Hoechst Celanese Corporation Hydroxylated aromatic polyamide polymer containing bound naphthoquinone diazide photosensitizer, method of making and use
DE3724368A1 (de) * 1987-07-23 1989-02-02 Basf Ag Verfahren zur herstellung oligomerer oder polymerer strahlungsreaktiver vorstufen fuer loesungsmittelstrukturierte schichten
US5019482A (en) * 1987-08-12 1991-05-28 Asahi Kasei Kogyo Kabushiki Kaisha Polymer/oxime ester/coumarin compound photosensitive composition
JP2626696B2 (ja) * 1988-04-11 1997-07-02 チッソ株式会社 感光性重合体
JPH0749483B2 (ja) * 1988-05-02 1995-05-31 チッソ株式会社 感光性重合体の製造方法
DE68919453T2 (de) * 1988-08-24 1995-03-30 Asahi Chemical Ind Vorläufer für ein Polymid mit geringer thermischer Spannung und einen Polymidvorläufer enthaltende photopolymensierbare Zusammensetzung.
DE3833438A1 (de) * 1988-10-01 1990-04-05 Basf Ag Strahlungsempfindliche gemische und deren verwendung
US5055549A (en) * 1989-01-18 1991-10-08 Chisso Corporation Process for preparing photosensitive heat-resistant polymer
JPH0371633A (ja) 1989-08-11 1991-03-27 Sumitomo Bakelite Co Ltd 半導体装置の製造方法
CA2025681A1 (en) * 1989-09-22 1991-03-23 Allan E. Nader Photoreactive resin compositions developable in a semi-aqueous solution
JPH0452647A (ja) 1990-06-20 1992-02-20 Toray Ind Inc 化学線感応性重合体組成物
JP2547944B2 (ja) * 1992-09-30 1996-10-30 インターナショナル・ビジネス・マシーンズ・コーポレイション 二層レジスト組成物を使用する光学リソグラフによりサブ−ハーフミクロンパターンを形成する方法

Also Published As

Publication number Publication date
KR0127278B1 (ko) 1997-12-26
EP0580108B1 (de) 1997-03-12
DE69331471T2 (de) 2002-06-20
EP0718696A3 (de) 1998-03-25
US6482569B1 (en) 2002-11-19
EP0718696A2 (de) 1996-06-26
US6162580A (en) 2000-12-19
EP0718696B1 (de) 2002-01-16
KR940005998A (ko) 1994-03-22
DE69331471D1 (de) 2002-02-21
EP0580108A2 (de) 1994-01-26
EP0580108A3 (en) 1994-08-24
DE69308671D1 (de) 1997-04-17

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Legal Events

Date Code Title Description
8363 Opposition against the patent
8328 Change in the person/name/address of the agent

Free format text: DERZEIT KEIN VERTRETER BESTELLT

8339 Ceased/non-payment of the annual fee