DE69301999T2 - Photoresist Zusammensetzung - Google Patents

Photoresist Zusammensetzung

Info

Publication number
DE69301999T2
DE69301999T2 DE69301999T DE69301999T DE69301999T2 DE 69301999 T2 DE69301999 T2 DE 69301999T2 DE 69301999 T DE69301999 T DE 69301999T DE 69301999 T DE69301999 T DE 69301999T DE 69301999 T2 DE69301999 T2 DE 69301999T2
Authority
DE
Germany
Prior art keywords
photoresist composition
photoresist
composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69301999T
Other languages
English (en)
Other versions
DE69301999D1 (de
Inventor
James Field Cameron
Jean M J Frechet
Man-Kit Leung
Claus-Peter Niesert
Scott Arthur Macdonald
Carlton Grant Willson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of DE69301999D1 publication Critical patent/DE69301999D1/de
Application granted granted Critical
Publication of DE69301999T2 publication Critical patent/DE69301999T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
DE69301999T 1992-11-24 1993-11-22 Photoresist Zusammensetzung Expired - Fee Related DE69301999T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US98103392A 1992-11-24 1992-11-24

Publications (2)

Publication Number Publication Date
DE69301999D1 DE69301999D1 (de) 1996-05-02
DE69301999T2 true DE69301999T2 (de) 1996-10-10

Family

ID=25528049

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69301999T Expired - Fee Related DE69301999T2 (de) 1992-11-24 1993-11-22 Photoresist Zusammensetzung

Country Status (4)

Country Link
US (1) US5545509A (de)
EP (1) EP0599571B1 (de)
JP (1) JP2654339B2 (de)
DE (1) DE69301999T2 (de)

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KR0174316B1 (ko) * 1994-07-05 1999-04-01 모리시다 요이치 미세패턴 형성방법
JP2946280B2 (ja) * 1994-09-19 1999-09-06 光技術研究開発株式会社 半導体結晶成長方法
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EP1124158A1 (de) * 1996-02-26 2001-08-16 Matsushita Electric Industrial Co., Ltd. Bilderzeugungsmaterial und Verfahren
JP4308326B2 (ja) * 1997-03-18 2009-08-05 チバ スペシャルティ ケミカルズ ホールディング インコーポレーテッド α−アミノアルケン類に基づく光励起性の窒素含有塩基類
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JP3383564B2 (ja) * 1997-12-26 2003-03-04 株式会社東芝 パターン形成方法および感光性組成物
DE59903270D1 (de) 1998-08-21 2002-12-05 Ciba Sc Holding Ag Photoaktivierbare stickstoffhaltige basen
US6537736B1 (en) * 1999-03-12 2003-03-25 Matsushita Electric Industrial Co., Ltd. Patten formation method
US6528240B1 (en) * 1999-03-12 2003-03-04 Matsushita Electric Industrial Co., Ltd. Pattern formation method
US6727047B2 (en) 1999-04-16 2004-04-27 Applied Materials, Inc. Method of extending the stability of a photoresist during direct writing of an image upon the photoresist
US6969569B2 (en) * 1999-04-16 2005-11-29 Applied Materials, Inc. Method of extending the stability of a photoresist during direct writing of an image
US6338934B1 (en) 1999-08-26 2002-01-15 International Business Machines Corporation Hybrid resist based on photo acid/photo base blending
KR100719426B1 (ko) * 2000-08-29 2007-05-18 제이에스알 가부시끼가이샤 감방사선성 굴절율 변화성 조성물 및 굴절율 변화법
DE10131667B4 (de) * 2001-06-29 2007-05-31 Infineon Technologies Ag Negativ Resistprozess mit simultaner Entwicklung und Silylierung
JP2003043682A (ja) 2001-08-01 2003-02-13 Jsr Corp 感放射線性誘電率変化性組成物、誘電率変化法
DE60219812T8 (de) * 2001-10-17 2008-05-21 Ciba Specialty Chemicals Holding Inc. Photoaktivierbare stickstoffbasen
US20050227183A1 (en) * 2002-01-11 2005-10-13 Mark Wagner Compositions and methods for image development of conventional chemically amplified photoresists
US6929904B2 (en) * 2002-11-14 2005-08-16 The University Of North Carolina At Chapel Hill Positive tone lithography with carbon dioxide development systems
US6919167B2 (en) * 2002-11-14 2005-07-19 Micell Technologies Positive tone lithography in carbon dioxide solvents
US20050126697A1 (en) * 2003-12-11 2005-06-16 International Business Machines Corporation Photochemically and thermally curable adhesive formulations
US7410751B2 (en) * 2005-01-28 2008-08-12 Micell Technologies, Inc. Compositions and methods for image development of conventional chemically amplified photoresists
WO2006081534A1 (en) * 2005-01-28 2006-08-03 Micell Technologies, Inc. Compositions and methods for image development of conventional chemically amplified photoresists
TW200715067A (en) * 2005-09-06 2007-04-16 Koninkl Philips Electronics Nv Lithographic method
JP2009175363A (ja) * 2008-01-23 2009-08-06 Tokyo Ohka Kogyo Co Ltd 液浸露光用レジスト組成物、レジストパターン形成方法、および含フッ素共重合体
JP5412125B2 (ja) * 2008-05-01 2014-02-12 東京応化工業株式会社 液浸露光用ネガ型レジスト組成物およびレジストパターン形成方法
JP5401126B2 (ja) 2008-06-11 2014-01-29 東京応化工業株式会社 液浸露光用レジスト組成物およびそれを用いたレジストパターン形成方法
JP5172505B2 (ja) * 2008-07-07 2013-03-27 東京応化工業株式会社 ネガ型レジスト組成物およびそれを用いたレジストパターン形成方法
JP5573356B2 (ja) 2009-05-26 2014-08-20 信越化学工業株式会社 レジスト材料及びパターン形成方法
KR101716915B1 (ko) 2009-06-17 2017-03-15 쓰리본드 화인 케미칼 가부시키가이샤 염기 및 라디칼 발생제, 및 그것을 이용한 조성물 및 그의 경화 방법
JP5516195B2 (ja) 2009-08-04 2014-06-11 信越化学工業株式会社 パターン形成方法及びレジスト材料
JP5573578B2 (ja) 2009-10-16 2014-08-20 信越化学工業株式会社 パターン形成方法及びレジスト材料
JP5504823B2 (ja) * 2009-10-28 2014-05-28 Ｊｓｒ株式会社 感放射線性組成物、保護膜、層間絶縁膜、及びそれらの形成方法
JP5621735B2 (ja) 2010-09-03 2014-11-12 信越化学工業株式会社 パターン形成方法及び化学増幅ポジ型レジスト材料
WO2012174384A1 (en) 2011-06-15 2012-12-20 Promerus Llc Thermally decomposable polymer compositions incorporating thermally activated base generators
CN103034059B (zh) * 2011-09-29 2015-02-04 中芯国际集成电路制造(北京)有限公司 光致抗蚀剂和光刻方法
EP2792694A4 (de) 2011-12-16 2015-07-15 Three Bond Fine Chemical Co Ltd Härtbare harzzusammensetzung
US8846295B2 (en) 2012-04-27 2014-09-30 International Business Machines Corporation Photoresist composition containing a protected hydroxyl group for negative development and pattern forming method using thereof
JP5871771B2 (ja) * 2012-10-26 2016-03-01 東京応化工業株式会社 ポジ型感光性樹脂組成物、ポリイミド樹脂パターンの形成方法、及びパターン化されたポリイミド樹脂膜
US9505948B2 (en) 2012-12-17 2016-11-29 Promerus, Llc Thermally decomposable polymer compositions for forming microelectronic assemblies
TWI561919B (en) * 2014-03-15 2016-12-11 Univ Texas Ordering block copolymers

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US4035189A (en) * 1972-02-25 1977-07-12 Hitachi Chemical Company, Ltd. Image forming curable resin compositions
US4181531A (en) * 1978-04-07 1980-01-01 E. I. Du Pont De Nemours And Company Positive non-silver systems containing nitrofuryldihydropyridine
US4239848A (en) * 1979-02-26 1980-12-16 Eastman Kodak Company Photocrosslinkable carbonyl-containing polymeric composition and element with cobalt complex
US4400461A (en) * 1981-05-22 1983-08-23 Bell Telephone Laboratories, Incorporated Process of making semiconductor devices using photosensitive bodies
DE3231144A1 (de) * 1982-08-21 1984-02-23 Basf Ag, 6700 Ludwigshafen Verfahren zur herstellung von tiefdruckformen mit kunststoff-druckschichten
DE3231147A1 (de) * 1982-08-21 1984-02-23 Basf Ag, 6700 Ludwigshafen Positiv arbeitendes verfahren zur herstellung von reliefbildern oder resistmustern
US4491628A (en) * 1982-08-23 1985-01-01 International Business Machines Corporation Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone
US4666820A (en) * 1983-04-29 1987-05-19 American Telephone And Telegraph Company, At&T Laboratories Photosensitive element comprising a substrate and an alkaline soluble mixture
US4552833A (en) * 1984-05-14 1985-11-12 International Business Machines Corporation Radiation sensitive and oxygen plasma developable resist
US4810601A (en) * 1984-12-07 1989-03-07 International Business Machines Corporation Top imaged resists
US4981909A (en) * 1985-03-19 1991-01-01 International Business Machines Corporation Plasma-resistant polymeric material, preparation thereof, and use thereof
US4657845A (en) * 1986-01-14 1987-04-14 International Business Machines Corporation Positive tone oxygen plasma developable photoresist
JPH03136054A (ja) * 1989-10-23 1991-06-10 Sony Corp ネガ型フォトレジスト組成物
US5650261A (en) * 1989-10-27 1997-07-22 Rohm And Haas Company Positive acting photoresist comprising a photoacid, a photobase and a film forming acid-hardening resin system
JP2583364B2 (ja) * 1990-06-19 1997-02-19 三菱電機株式会社 感光性樹脂組成物
JP3008468B2 (ja) * 1990-09-26 2000-02-14 ソニー株式会社 感光性組成物、及び該感光性組成物を用いたパターン形成方法及び半導体の製造方法
JPH04158363A (ja) * 1990-10-22 1992-06-01 Mitsubishi Electric Corp パターン形成用レジスト材料
US5206117A (en) * 1991-08-14 1993-04-27 Labadie Jeffrey W Photosensitive polyamic alkyl ester composition and process for its use

Also Published As

Publication number Publication date
EP0599571A2 (de) 1994-06-01
EP0599571B1 (de) 1996-03-27
EP0599571A3 (de) 1994-08-03
DE69301999D1 (de) 1996-05-02
JPH07134399A (ja) 1995-05-23
JP2654339B2 (ja) 1997-09-17
US5545509A (en) 1996-08-13

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Legal Events

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8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee