EP1182461B2 - Sensor für die Detektion der Richtung eines Magnetfeldes - Google Patents

Sensor für die Detektion der Richtung eines Magnetfeldes Download PDF

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Publication number
EP1182461B2
EP1182461B2 EP01202840.3A EP01202840A EP1182461B2 EP 1182461 B2 EP1182461 B2 EP 1182461B2 EP 01202840 A EP01202840 A EP 01202840A EP 1182461 B2 EP1182461 B2 EP 1182461B2
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EP
European Patent Office
Prior art keywords
magnetic field
hall
hall elements
group
concentrator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
EP01202840.3A
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German (de)
English (en)
French (fr)
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EP1182461B8 (de
EP1182461A3 (de
EP1182461A2 (de
EP1182461B1 (de
Inventor
Radivoje Popovic
Robert Racz
Christian Schott
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Melexis Technologies NV
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Melexis Technologies NV
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
    • G01B7/30—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring angles or tapers; for testing the alignment of axes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
    • G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
    • G01D5/12—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means
    • G01D5/14—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage
    • G01D5/142—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage using Hall-effect devices
    • G01D5/145—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage using Hall-effect devices influenced by the relative movement between the Hall device and magnetic fields
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/07—Hall effect devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/07—Hall effect devices
    • G01R33/077—Vertical Hall-effect devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
    • G01D2205/00—Indexing scheme relating to details of means for transferring or converting the output of a sensing member
    • G01D2205/40—Position sensors comprising arrangements for concentrating or redirecting magnetic flux

Definitions

  • the invention relates to a sensor for the detection of the direction of a magnetic field referred to in the preamble of claim 1 and 2 Art.
  • Such a sensor is suitable, for example, as an angle sensor for the control of brushless electric motors, which have a stator consisting of several coils.
  • the rotor of the electric motor has a permanent magnet, which cooperates with the sensor for generating a signal dependent on the rotation angle for the phase-controlled control of the coils.
  • the sensor is a vertical Hall element with multiple arms, wherein in each arm a dependent of the rotational position of the permanent magnet Hall voltage is generated.
  • the Hall voltages are used to drive the coils of the electric motor.
  • the vertical Hall element is sensitive to the running parallel to the chip surface components of the magnetic field generated by the permanent magnet. It has the disadvantage that it can not be realized together with the processing electronics on the same chip, since it is based on a special semiconductor technology.
  • Hall elements which are sensitive to the incident perpendicular to the chip surface component of the magnetic field generated by the permanent magnet.
  • these Hall elements are integrated with the processing electronics on the same chip.
  • this solution has the disadvantage that the Hall elements must be arranged in the region of the edge of the permanent magnet, where the vertical component of the magnetic field is greatest. In the area of the axis of rotation, the vertical component is small.
  • the placement of the Hall elements is dependent on the dimensions of the permanent magnet. With larger permanent magnets, it is then no longer economical to integrate the Hall elements on a single semiconductor chip.
  • EP 893 668 is an angle sensor with a magnetic field sensor element is known, which is based on the magnetoresistance effect.
  • an additional horizontal Hall element is available.
  • the Hall element must be positioned at a different location than the magnetic field sensor element, since the magnetic field sensor element must measure the horizontally extending components of the magnetic field, the rotating permanent magnet, the Hall element but the vertical component of the magnetic field.
  • Magnetoresistive effect sensors also exhibit hysteresis effects that limit resolution.
  • an angle sensor which comprises a disc-shaped magnetic field concentrator and a plurality of magnetoresistive magnetic field sensors arranged along a circle around the magnetic field concentrator.
  • the magnetic field concentrator interacts with a magnet used as an angle transmitter in order to generate a magnetic field which, in the region of the magnetic field sensors, is tangential to the magnetic field sensors and thus in their sensitivity direction.
  • the invention has for its object to provide a sensor that no longer has the disadvantages mentioned above.
  • a sensor for detecting the direction of a magnetic field comprises a single magnetic field concentrator with a planar shape and at least one first Hall element and a second Hall element or at least a first group and a second group of Hall elements, wherein the Hall elements in the region Edge of the magnetic field concentrator are arranged.
  • the areal magnetic field concentrator has the task of influencing an external magnetic field in such a way that it flows through the Hall elements in an optimal way.
  • the Hall elements may be so-called horizontal Hall elements or so-called vertical Hall elements.
  • Horizontal Hall elements are sensitive to the component of the magnetic field that impinges perpendicular to their surface, while vertical Hall elements are sensitive to a component of the magnetic field that is parallel to their surface.
  • Horizontal Hall elements are therefore below the magnetic field concentrator, vertical Hall elements in the area next to the edge to arrange outside the magnetic field concentrator.
  • a sensor for detecting the direction of a magnetic field comprises at least three magnetic field concentrators symmetrically arranged with respect to a symmetry point in the region of the point of symmetry have mutually facing edges which are parallel to each other, and per magnetic field concentrator, a Hall element or a group of Hall elements, wherein the Hall elements are arranged in the region of the parallel edges of the edge of the associated magnetic field concentrator.
  • the Fig. 1 shows in plan view of a sensor according to the invention, which is suitable for example as an angle sensor for the control of a brushless electric motor with three coils.
  • the sensor comprises a semiconductor chip 1 with six horizontal Hall elements 2.1 to 2.6 and a single magnetic field concentrator 3.
  • the magnetic field concentrator 3 is disk-shaped and the six Hall elements 2 are arranged at regular intervals along the edge 4 of the magnetic field concentrator 3.
  • the Hall elements 2.1 to 2.6 are known per se in technology, preferably in CMOS technology as n-well 6 (FIG. Fig. 2 ) in a p-doped substrate 7 (FIG. Fig. 2 ) realized. Horizontal Hall elements are sensitive to the component of the magnetic field which impinges perpendicular to the surface 8 of the semiconductor chip 1.
  • the Hall elements 2.1 to 2.6 have a cross-shaped structure whose orientation is preferably parallel to the crystal axis 100, so that the influence of varying mechanical stresses on the Hall signal remains as low as possible.
  • the magnetic field concentrator 3 is made of ferromagnetic material, preferably permalloy or mumetal or a metal glass, e.g. available as a tape of about 15 ⁇ m to 30 ⁇ m thickness. Preference is given to a metal glass with a comparatively low coercive force, so that no hysteresis effects occur. In addition, their magnetization is largely isotropic.
  • the magnetic field concentrator 3 extends in a plane 9 and has a flat shape, ie its thickness is substantially less than its extent in the plane.
  • the magnetic field concentrator 3 preferably has a uniform thickness. But it can be made thicker in the middle than at the edge.
  • the magnetic field concentrator 3 therefore acts as a concentrator for the components of the magnetic field which lie in the plane 9.
  • the function of the magnetic field concentrator 3 is based on the Fig. 2 explained in more detail.
  • the magnetic field concentrator 3 has in this example a center of symmetry 5, namely, it is rotationally symmetrical.
  • the Fig. 2 shows the sensor in a section along the line 1-1 of Fig. 1 , and a magnetic field generating permanent magnet 10, for example, mounted on the axis of rotation 11 of a brushless electric motor 12 with three coils.
  • the magnetic field concentrator 3 changes in its environment the course of the field lines 13 of the magnetic field and in particular causes the field lines, which would run in the absence of the magnetic field concentrator 3 parallel to the surface 8 of the semiconductor chip 1, the Hall element 2.1 penetrate approximately perpendicular to the surface 8.
  • the relative permeability of the material of the magnetic field concentrator 3 is greater than 1000, while the relative permeability of air and the semiconductor substrate 7 is about 1.
  • the field lines are therefore virtually always directed perpendicular to the surface of the magnetic field concentrator 3.
  • the Hall elements 2.1 to 2.6 are arranged in the region of the lateral edge 4 of the magnetic field concentrator 3, since the vertical component of the magnetic field is greatest there.
  • diametrically opposite Hall elements each form a pair for generating an output signal, wherein the Hall voltage of a Hall element is subtracted from the Hall voltage of the other Hall element. Since the field lines penetrate the two Hall elements of a pair in the opposite vertical direction, the voltages resulting from the "deflection" of the magnetic field, while Hall voltages arising for example due to an external, the Hall elements perpendicularly penetrating magnetic interference field, cancel each other out , In addition, technology-related offset voltages are at least partially compensated.
  • the Hall elements 2.1 and 2.4 together generate the output signal S 1
  • the Hall elements 2.2 and 2.5 generate the output signal S 2
  • the Hall elements 2.3 and 2.6 generate the output signal S 3 .
  • the strength of the output signals S 1 , S 2 and S 3 depends on the direction of the magnetic field in the plane 9.
  • the magnetic field rotates with and generates approximately sinusoidal output signals S 1 , S 2 and S 3 , which are phase-shifted by 120 °.
  • the output signal S 1 is always maximum when the direction of the magnetic field of the permanent magnet 10 is parallel to the axis connecting the two Hall elements 2.1 and 2.4
  • the output signal S 2 is always maximum when the direction of the magnetic field of the permanent magnet 10 is parallel to the axis connecting the two Hall elements 2.3 and 2.5, etc.
  • the output signals S 1 , S 2 and S 3 can, as in the European patent application EP 954085 described, are used to control the three coils of the electric motor 12.
  • the output signals S 1 , S 2 and S 3 can also be used to determine the angle of rotation ⁇ of the axis of rotation 11 when the electric motor 12 is stationary.
  • the output signals S 1 , S 2 and S 3 are superimposed as possible no signals that do not originate from the magnetic field of the permanent magnet 10.
  • the proposed example with the pairwise coupled Hall elements is particularly suitable for this because the influence of external interference fields is largely eliminated and technology-related offset voltages are largely compensated.
  • Technology-related offset voltages can be further reduced if instead of the individual Hall elements 2.1 to 2.6 of two or more Hall elements existing groups of Hall elements are used, the current directions in the different Hall elements of a group are different.
  • FIG. 3 Such an example is in the Fig. 3 represented where four groups 14 to 17, each with two Hall elements 2.1 to 2.8 are present. Mutually diametrically opposed groups of Hall elements are coupled in pairs, so that the sensor provides two output signals S 1 and S 2 .
  • the Hall elements are cross-shaped and each Hall element is associated with an arrow indicating the direction of current within the Hall element.
  • the magnetic field concentrator 3 also has a cross-shaped structure, resulting in a higher concentration of the magnetic field at the location of the Hall elements than the circular structure shown in the previous example.
  • This sensor is suitable for example for the control of an electric motor 12 with two coils. If necessary, it is possible to store the value of the output signals S 1 and S 2 as a function of the angle of rotation ⁇ . Since the output signals S 1 and S 2 are phase-shifted, the rotational angle ⁇ can be easily determined unambiguously on the basis of the output signals S 1 and S 2 .
  • the Fig. 4 shows, with respect to the sensor of the first example, in a schematic, not true to scale representation of the semiconductor chip 1 with the two integrated Hall elements 2.1 and 2.4, which are diametrically opposed to each other in the plane with respect to the axis of rotation 11 (see also Fig. 1 ) and the circular magnetic field concentrator 3.
  • With vertical arrows are the strength and direction of the permanent magnet 10 (FIG. Fig. 2 ) generated field in the region of the two Hall elements 2.1 and 2.4.
  • a displacement of the magnetic field concentrator 3 from the ideal position in the positive x-direction causes a decrease in the Hall voltage in the Hall element 2.1 and an increase in the Hall voltage in the Hall element 2.4.
  • the diameter of the magnetic field concentrator 3 is matched to the distance of the two Hall elements 2.1 and 2.4, that both Hall elements 2.1 and 2.4, with ideal position of the magnetic field concentrator 3 with respect to the two Hall elements 2.1 and 2.4, not within the zone where the field strength of the magnetic field reaches its maximum: the Hall elements 2.1 and 2.4 are either closer to the center, as in the Fig. 4 shown, or placed more distant from the center. The influence of positioning variations of the magnetic field concentrator 3 with respect to the two Hall elements 2.1 and 2.4 is minimized.
  • the sensor is only used to control an electric motor, wherein the rotation angle at the stoppage of the engine is not interested, then it is sufficient if only one of the paired Hall elements is present.
  • these are the Hall elements 2.1, 2.2 and 2.3.
  • a magnetic field concentrator instead of a circular magnetic field concentrator, a magnetic field concentrator with another, e.g. polygonal shape, to be used. In particular, for photolithographic reasons, it may be appropriate to approximate the circular shape by a polygon. Likewise, the number of Hall elements can be increased.
  • the Fig. 5 shows an embodiment with vertical Hall elements 2.
  • Vertical Hall elements are sensitive to the component of the magnetic field, which penetrate the Hall element parallel to the surface 8 of the semiconductor chip 1.
  • a with the electronics integrable vertical Hall element is for example in the American patent US 5572058 described.
  • the vertical Hall elements 2 are aligned tangentially to the edge 4 of the magnetic field concentrator 3. They are in the region of the edge 4 of the magnetic field concentrator 3, but not below the magnetic field concentrator 3 as the horizontal Hall elements, but laterally offset outside the magnetic field concentrator 3, where the parallel to the surface 8 of the semiconductor chip 1 extending field lines 13 (FIG. Fig. 2 ) of the magnetic field are greatest.
  • the Fig. 6 shows with arrows the strength of the horizontal field lines 13 (FIG. Fig. 2 ) of the magnetic field in the region of the vertical Hall elements 2, wherein the length of the arrows is proportional to the strength of the magnetic field.
  • the sensors described are also suitable as angle sensor for the in the cited European patent application EP 893 668 described applications.
  • the Fig. 7a shows an example of a sensor in which the magnetic field concentrator 3 has the shape of a circular ring. This allows the arrangement of a further horizontal Hall element 2 ', for example in the center of the annulus, with which the perpendicular to the Hall element 2' incident component of the magnetic field can be measured.
  • a sensor is suitable for use in a joystick, for example, since it allows the direction of an external magnetic field to be determined in three dimensions.
  • the magnetic field concentrator 3 Since the magnetic field concentrator 3 is very thin, it practically does not affect the component of the magnetic field which impinges perpendicular to the Hall element 2 '. Also with the in the Fig. 7b The sensor shown can determine the direction of an external magnetic field in three dimensions. However, there is a risk that the vertical component of horizontal components overlap, because the magnetic field concentrator 3 amplified the horizontal components and secondly in deviations of the magnetic field concentrator 3 from its desired position and horizontal components of the magnetic field, the Hall element 2 'could penetrate in the vertical direction ,
  • the magnetic field concentrator 3 can also act as a concentrator for the vertical component of the magnetic field, namely when the width of the ferromagnetic annulus is comparable to its thickness. From the sum of the signals of the two Hall elements 2.1 and 2.3 or the sum of the signals of the two Hall elements 2.2 and 2.4, a signal can be obtained which is proportional to the vertical component of the magnetic field, while from the differences, as stated above, the horizontal components of the magnetic field. The Hall element 2 'can then be omitted.
  • a single Hall element occupies a relatively small area of typically several tens * tens of microns.
  • the diameter of the circular magnetic field concentrator is about 0.2 mm to 0.5 mm. Ideally, the diameter of the magnetic field concentrator is less than the diameter of the permanent magnet, which is typically 1.3 mm or more.
  • an external field above 20 mT leads to saturation effects in the magnetic field concentrator. If the desired distance between the permanent magnet and the sensor is selected such that the magnetic field concentrator is at least partially magnetically saturated, then this has the advantage that the output signals S 1 , S 2 , etc. are not or only slightly offset by distance fluctuations of the permanent magnet Suspend the sensor.
  • Hall elements it is also possible to operate the Hall elements as a pulse, wherein the rotating permanent magnet per revolution generates as many pulses as Hall elements are present.
  • the Fig. 8 shows an angle sensor with three magnetic field concentrators 18.1, 18.2 and 18.3, which is like the sensor of the first example together with an acting as an angle sensor permanent magnet as an angle sensor for controlling a three coils having electric motor.
  • the magnetic field concentrators 18.1, 18.2 and 18.3 are arranged symmetrically with respect to a point of symmetry 19, namely with a 120 ° rotational symmetry. In the region of the edge 4 of each magnetic field concentrator facing the point of symmetry 19, there is a horizontal Hall element 2.1, 2.2 or 2.3.
  • the edge 4 of the magnetic field concentrators is subdivided into two regions, namely an inner region where opposing edges 20 of the magnetic field concentrators 18.1, 18.2 and 18.3 run parallel so that the density of the magnetic field lines in the gap between the two edges 20 is as homogeneous as possible and one Saturation of the peaks is avoided, and an outer area, where the distance between adjacent magnetic field concentrators is much larger, to avoid that the magnetic field is "shorted" here.
  • the outer edge 21 of the magnetic field concentrators 18.1, 18.2 and 18.3 extends over as large an angular range as possible to focus the outer magnetic field as efficiently as possible in the Hall elements 2.1, 2.2 and 2.3 and to avoid saturation peaks, which influence the angular dependence of the signals.
  • each Hall element 2.1, 2.2 or 2.3 provides an output signal S 1 S 2 or S 3 .
  • FIGS. 9 and 10 show two more sensors with four magnetic field concentrators 18.1 to 18.4, with which The direction of a magnetic field can be determined in two spatial dimensions.
  • two mutually diametrically opposite Hall elements are each coupled to a pair with respect to the point of symmetry 19: the Hall elements 2.1 and 2.3 together generate the output signal S 1 , the Hall elements 2.2 and 2.4 together generate the output signal S 2 . From the output signals S 1 and S 2 , the direction of the magnetic field in the plane 9 of the sensor can be determined.
  • the magnetic field concentrators need not be flat. They can be made thicker against the edge or coupled to additional external magnetic field concentrators in order to concentrate the magnetic field in the region of the Hall elements as efficiently as possible.
  • the Fig. 11 shows an embodiment with three magnetic field concentrators 18.1, 18.2, 18.3 and three vertical Hall elements 2.1, 2.2, 2.3, which are each arranged in the middle between the parallel edges 20 of adjacent magnetic field concentrators 18.1, 18.2, 18.3.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Transmission And Conversion Of Sensor Element Output (AREA)
  • Measuring Magnetic Variables (AREA)
  • Hall/Mr Elements (AREA)
  • Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
  • Brushless Motors (AREA)
  • Geophysics And Detection Of Objects (AREA)
  • Switches That Are Operated By Magnetic Or Electric Fields (AREA)
EP01202840.3A 2000-08-21 2001-07-24 Sensor für die Detektion der Richtung eines Magnetfeldes Expired - Lifetime EP1182461B2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CH16452000 2000-08-21
CH20001645 2000-08-21

Publications (5)

Publication Number Publication Date
EP1182461A2 EP1182461A2 (de) 2002-02-27
EP1182461A3 EP1182461A3 (de) 2009-01-21
EP1182461B1 EP1182461B1 (de) 2010-04-28
EP1182461B8 EP1182461B8 (de) 2010-06-16
EP1182461B2 true EP1182461B2 (de) 2019-10-09

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EP01202840.3A Expired - Lifetime EP1182461B2 (de) 2000-08-21 2001-07-24 Sensor für die Detektion der Richtung eines Magnetfeldes

Country Status (11)

Country Link
US (1) US6545462B2 (enExample)
EP (1) EP1182461B2 (enExample)
JP (1) JP4936299B2 (enExample)
KR (1) KR100810784B1 (enExample)
CN (1) CN1303430C (enExample)
AT (1) ATE466293T1 (enExample)
BR (1) BR0103428B1 (enExample)
CA (1) CA2355682C (enExample)
DE (1) DE50115458D1 (enExample)
MX (1) MXPA01008406A (enExample)
TW (1) TW544525B (enExample)

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TW544525B (en) 2003-08-01
ATE466293T1 (de) 2010-05-15
DE50115458D1 (de) 2010-06-10
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EP1182461B8 (de) 2010-06-16
US20020021124A1 (en) 2002-02-21
EP1182461A3 (de) 2009-01-21
EP1182461A2 (de) 2002-02-27
JP4936299B2 (ja) 2012-05-23
BR0103428B1 (pt) 2015-01-20
CA2355682A1 (en) 2002-02-21
EP1182461B1 (de) 2010-04-28
US6545462B2 (en) 2003-04-08
CN1303430C (zh) 2007-03-07
MXPA01008406A (es) 2003-05-19
BR0103428A (pt) 2002-03-26
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CN1343889A (zh) 2002-04-10
KR20020015275A (ko) 2002-02-27

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