EP0992070B1 - Composant a semi-conducteur de puissance et procede permettant de le produire - Google Patents
Composant a semi-conducteur de puissance et procede permettant de le produire Download PDFInfo
- Publication number
- EP0992070B1 EP0992070B1 EP98929357A EP98929357A EP0992070B1 EP 0992070 B1 EP0992070 B1 EP 0992070B1 EP 98929357 A EP98929357 A EP 98929357A EP 98929357 A EP98929357 A EP 98929357A EP 0992070 B1 EP0992070 B1 EP 0992070B1
- Authority
- EP
- European Patent Office
- Prior art keywords
- semiconductor
- schottky
- barrier
- semiconductor layer
- component
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 66
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 6
- 239000000463 material Substances 0.000 claims abstract description 22
- 230000004888 barrier function Effects 0.000 claims description 35
- 238000000034 method Methods 0.000 claims description 18
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 14
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 11
- 239000002800 charge carrier Substances 0.000 claims description 10
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 230000000295 complement effect Effects 0.000 claims description 5
- 238000009792 diffusion process Methods 0.000 claims description 2
- 238000000695 excitation spectrum Methods 0.000 claims description 2
- 238000005468 ion implantation Methods 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 230000007704 transition Effects 0.000 claims 6
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 230000000903 blocking effect Effects 0.000 description 11
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 230000002349 favourable effect Effects 0.000 description 8
- 238000002347 injection Methods 0.000 description 7
- 239000007924 injection Substances 0.000 description 7
- 239000000969 carrier Substances 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 229910002601 GaN Inorganic materials 0.000 description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000011144 upstream manufacturing Methods 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910008484 TiSi Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000035876 healing Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 230000037230 mobility Effects 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/6606—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/47—Schottky barrier electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/47—Schottky barrier electrodes
- H01L29/475—Schottky barrier electrodes on AIII-BV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/1608—Silicon carbide
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
L'invention concerne un composant à semi-conducteur à jonctions Schottky (5) et pn (9), situées dans une zone de migration (2, 10) d'un matériau à semi-conducteur. L'invention concerne en outre un procédé permettant de le produire.
Claims (12)
- Procédé de fabrication d'un composant à semi-conducteur MPS avec une anode et une cathode, où sont disposés sur une couche semi-conductrice (2) plusieurs contacts de Schottky dont les zones de bord sont pourvues chacune d'un écran constitué d'une zone semi-conductrice hautement dotée (7, 8) complémentaire à la couche semi-conductrice de telle sorte que l'écran forme aux zones de bord des barrières de Schottky (5) avec la couche semi-conductrice (2) respectivement une jonction pn (9) et que la couche semi-conductrice (2) forme entre les contacts de Schottky individuels et entre les jonctions pn individuelles (9) respectivement une zone de déplacement (10) où
la différence d'énergie (Egap-barrier) entre l'écart énergétique (Egap) dans le spectre d'excitation électronique du semi-conducteur de zone de déplacement (10) et la hauteur énergétique (barrier) de la barrière de Schottky (5) à l'état sans tension du composant à semi-conducteur est au moins de 0,8 eV, caractérisé en ce qu'on dépose sur un substrat de carbure de silicium (1) doté d'un premier agent de dopage d'au moins 1018 cm-3 d'une manière homo-épitactique une couche semi-conductrice (2) dotée d'un deuxième agent de dopage du même type de support de charge dans la plage entre 1014 et 1017 cm-3, à la suite de quoi est introduit dans la surface de la couche semi-conductrice disposée à distance du substrat un troisième agent de dopage d'un type de support de charge complémentaire structuré par diffusion et/ou implantation d'ions pour former les jonctions pn (7, 8, 9) formant l'écran, ensuite le composant est soumis à un traitement thermique entre 1400°C et 1700°C, après le traitement thermique, une première couche métallique est appliquée sur la surface implantée pour former un contact de Schottky et une deuxième couche métallique pour former un contact ohmique, et la première et la deuxième couche sont ensuite structurées. - Procédé selon la revendication 1, caractérisé en ce que pendant le traitement thermique, le composant est maintenu pendant une durée de temps limitée à une température entre 1400°C et 1500°C, et qu'ensuite le traitement de composant est poursuivi à une seconde température supérieure à 1500°C.
- Procédé selon la revendication 1 ou 2, caractérisé en ce que pendant le traitement thermique, le composant est chauffé au voisinage direct de silicium élémentaire.
- Procédé selon au moins l'une des revendications précédentes, caractérisé en ce que la différence énergétique (Egap-barrier) est au moins de 1 eV.
- Procédé selon au moins l'une des revendications précédentes, caractérisé en ce que la hauteur énergétique de la barrière de Schottky (barrier) est plus grande que 0,5 eV et plus petite que 2 eV.
- Procédé selon au moins l'une des revendications précédentes, caractérisé en ce que la couche semi-conductrice (2) présente une épaisseur entre 2 µm et 50 µm.
- Procédé selon au moins l'une des revendications précédentes, caractérisé en ce que l'écart de jonctions pn avoisinantes (9) est compris entre 0,5 µm et 20 µm.
- Procédé selon au moins l'une des revendications précédentes, caractérisé en ce que les jonctions pn (9) sont disposées dans des évidements réalisés par attaque chimique dans la couche semi-conductrice (2).
- Procédé selon au moins l'une des revendications précédentes, caractérisé en ce que les zones semiconductrices hautement dotées de l'écran (7, 8) d'une part, et les zones de déplacement (10), d'autre part, sont formées par des matériaux semi-conducteurs différents.
- Procédé selon au moins l'une des revendications précédentes, caractérisé en ce que la cathode (K) et l'anode (A) sont disposées sur des surfaces opposées du composant à semi-conducteur.
- Procédé selon au moins l'une des revendications précédentes, caractérisé en ce que la cathode (K) et l'anode (A) sont disposées sur la même surface du composant à semi-conducteur.
- Procédé selon au moins l'une des revendications précédentes, caractérisé en ce qu'il est disposé en amont de la cathode une zone semi-conductrice hautement dotée (1) qui présente le même type de conductivité que la couche semi-conductrice (2).
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19723176A DE19723176C1 (de) | 1997-06-03 | 1997-06-03 | Leistungshalbleiter-Bauelement und Verfahren zu dessen Herstellung |
| DE19723176 | 1997-06-03 | ||
| PCT/EP1998/003010 WO1998056043A1 (fr) | 1997-06-03 | 1998-05-22 | Composant a semi-conducteur de puissance et procede permettant de le produire |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| EP0992070A1 EP0992070A1 (fr) | 2000-04-12 |
| EP0992070B1 true EP0992070B1 (fr) | 2003-01-08 |
Family
ID=7831234
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP98929357A Expired - Lifetime EP0992070B1 (fr) | 1997-06-03 | 1998-05-22 | Composant a semi-conducteur de puissance et procede permettant de le produire |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US6501145B1 (fr) |
| EP (1) | EP0992070B1 (fr) |
| JP (1) | JP2002508888A (fr) |
| CN (1) | CN1230913C (fr) |
| DE (2) | DE19723176C1 (fr) |
| WO (1) | WO1998056043A1 (fr) |
Families Citing this family (96)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10322760A (ja) * | 1997-05-21 | 1998-12-04 | Toshiba Corp | セルラ無線システム |
| DE19723176C1 (de) * | 1997-06-03 | 1998-08-27 | Daimler Benz Ag | Leistungshalbleiter-Bauelement und Verfahren zu dessen Herstellung |
| WO2001017027A1 (fr) * | 1999-08-30 | 2001-03-08 | Institute Of Biophysics Chinese Academy Of Sciences | Diode a plaques paralleles |
| JP3138705B1 (ja) * | 1999-08-31 | 2001-02-26 | 工業技術院長 | ダイヤモンドｐｎ接合ダイオードおよびその作製方法 |
| WO2001022498A1 (fr) * | 1999-09-22 | 2001-03-29 | Siced Electronics Development Gmbh & Co. Kg | Dispositif a semi-conducteur (sic) pourvu d'un contact schottky, et son procede de production |
| US6717229B2 (en) | 2000-01-19 | 2004-04-06 | Fabtech, Inc. | Distributed reverse surge guard |
| EP1119055A1 (fr) * | 2000-01-19 | 2001-07-25 | Fabtech, Inc. | Dispositif antisurcharge inverse réparti |
| JP4831272B2 (ja) * | 2001-03-26 | 2011-12-07 | 株式会社デンソー | 半導体装置の製造方法 |
| US20030015708A1 (en) | 2001-07-23 | 2003-01-23 | Primit Parikh | Gallium nitride based diodes with low forward voltage and low reverse current operation |
| DE10235198B4 (de) * | 2001-08-02 | 2011-08-11 | Fuji Electric Systems Co., Ltd. | Leistungs-Halbleitergleichrichter mit ringförmigen Gräben |
| JP2003069045A (ja) * | 2001-08-22 | 2003-03-07 | Mitsubishi Electric Corp | 半導体装置 |
| JP4064085B2 (ja) * | 2001-10-18 | 2008-03-19 | 三菱電機株式会社 | 半導体装置及びその製造方法 |
| FR2832547A1 (fr) * | 2001-11-21 | 2003-05-23 | St Microelectronics Sa | Procede de realisation d'une diode schottky sur substrat de carbure de silicium |
| FR2837322B1 (fr) | 2002-03-14 | 2005-02-04 | Commissariat Energie Atomique | DIODE SCHOTTKY DE PUISSANCE A SUBSTRAT SiCOI, ET PROCEDE DE REALISATION D'UN TELLE DIODE |
| JP2004127968A (ja) * | 2002-09-30 | 2004-04-22 | Sanyo Electric Co Ltd | 半導体装置およびその製造方法 |
| US6825073B1 (en) * | 2003-09-17 | 2004-11-30 | Chip Integration Tech Co., Ltd. | Schottky diode with high field breakdown and low reverse leakage current |
| JP2005191227A (ja) * | 2003-12-25 | 2005-07-14 | Sanyo Electric Co Ltd | 半導体装置 |
| JP2005243716A (ja) * | 2004-02-24 | 2005-09-08 | Sanyo Electric Co Ltd | 半導体装置 |
| US7417266B1 (en) | 2004-06-10 | 2008-08-26 | Qspeed Semiconductor Inc. | MOSFET having a JFET embedded as a body diode |
| US20050275065A1 (en) * | 2004-06-14 | 2005-12-15 | Tyco Electronics Corporation | Diode with improved energy impulse rating |
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| JP4567426B2 (ja) | 2004-11-25 | 2010-10-20 | パナソニック株式会社 | ショットキーバリアダイオード及びダイオードアレイ |
| US7436039B2 (en) * | 2005-01-06 | 2008-10-14 | Velox Semiconductor Corporation | Gallium nitride semiconductor device |
| US9070850B2 (en) | 2007-10-31 | 2015-06-30 | Cree, Inc. | Light emitting diode package and method for fabricating same |
| EP1758171A4 (fr) * | 2005-03-04 | 2009-04-29 | Sumitomo Electric Industries | Dispositif semi-conducteur de nitrure de gallium vertical et substrat épitaxial |
| JP4895520B2 (ja) * | 2005-03-28 | 2012-03-14 | 日本電信電話株式会社 | ショットキーダイオードおよびその製造方法 |
| US7658828B2 (en) * | 2005-04-13 | 2010-02-09 | Siemens Water Technologies Holding Corp. | Regeneration of adsorption media within electrical purification apparatuses |
| JP5303819B2 (ja) * | 2005-08-05 | 2013-10-02 | 住友電気工業株式会社 | 半導体装置およびその製造方法 |
| US8026568B2 (en) * | 2005-11-15 | 2011-09-27 | Velox Semiconductor Corporation | Second Schottky contact metal layer to improve GaN Schottky diode performance |
| DE102006001195A1 (de) | 2006-01-10 | 2007-07-12 | Sms Demag Ag | Verfahren zum Gieß-Walzen mit erhöhter Gießgeschwindigkeit und daran anschließendem Warmwalzen von relativ dünnen Metall-,insbesondere Stahlwerkstoff-Strängen,und Gieß-Walz-Einrichtung |
| US20070170934A1 (en) * | 2006-01-23 | 2007-07-26 | Maxmile Technologies, Llc | Method and Apparatus for Nondestructive Evaluation of Semiconductor Wafers |
| JP5580872B2 (ja) * | 2006-03-30 | 2014-08-27 | 日本碍子株式会社 | 半導体素子 |
| JP5362187B2 (ja) * | 2006-03-30 | 2013-12-11 | 日本碍子株式会社 | 半導体素子 |
| JP5272323B2 (ja) * | 2006-04-28 | 2013-08-28 | 日産自動車株式会社 | 半導体装置とその製造方法 |
| US7781802B2 (en) * | 2006-04-28 | 2010-08-24 | Nissan Motor Co., Ltd. | Semiconductor device and manufacturing method thereof |
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- 1998-05-22 CN CNB988056917A patent/CN1230913C/zh not_active Expired - Lifetime
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Also Published As
| Publication number | Publication date |
|---|---|
| US20030020135A1 (en) | 2003-01-30 |
| JP2002508888A (ja) | 2002-03-19 |
| DE19723176C1 (de) | 1998-08-27 |
| WO1998056043A1 (fr) | 1998-12-10 |
| CN1259228A (zh) | 2000-07-05 |
| EP0992070A1 (fr) | 2000-04-12 |
| DE59806872D1 (de) | 2003-02-13 |
| US6949401B2 (en) | 2005-09-27 |
| CN1230913C (zh) | 2005-12-07 |
| US6501145B1 (en) | 2002-12-31 |
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