EP1064684A1 - Bordure terminale pour un composant a semi-conducteur, diode a barriere de schottky dotee d'une bordure terminale et procede de fabrication d'une diode a barriere de schottky - Google Patents

Bordure terminale pour un composant a semi-conducteur, diode a barriere de schottky dotee d'une bordure terminale et procede de fabrication d'une diode a barriere de schottky

Info

Publication number
EP1064684A1
EP1064684A1 EP00904821A EP00904821A EP1064684A1 EP 1064684 A1 EP1064684 A1 EP 1064684A1 EP 00904821 A EP00904821 A EP 00904821A EP 00904821 A EP00904821 A EP 00904821A EP 1064684 A1 EP1064684 A1 EP 1064684A1
Authority
EP
European Patent Office
Prior art keywords
schottky diode
semiconductor
semiconductor body
edge termination
edge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP00904821A
Other languages
German (de)
English (en)
Inventor
Frank Pfirsch
Roland Rupp
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies AG
Original Assignee
Infineon Technologies AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies AG filed Critical Infineon Technologies AG
Publication of EP1064684A1 publication Critical patent/EP1064684A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H01L29/405—Resistive arrangements, e.g. resistive or semi-insulating field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1608—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes

Definitions

  • the present invention relates to an edge termination for a semiconductor component according to the preamble of claim 1 and a Schottky diode with an edge termination according to the preamble of claim 2. Furthermore, the present invention relates to a method for producing a semiconductor component with such an edge termination.
  • the invention relates primarily to asymmetrically blocking semiconductor components with planar edge closures.
  • the invention relates in particular to semiconductor components designed as Schottky diodes. Such semiconductor components and their mode of operation have been known for a long time and do not require any further description.
  • edge terminations in Schottky diodes are described.
  • One of these edge closures is designed here as a guard ring surrounding the Schottky contact, which forms a pn junction with the remaining semiconductor region.
  • the Schottky contact can also be made directly with an edge closure formed from field plates, i.e. H. without pn transition.
  • Schottky diodes are majority carrier semiconductor components and are therefore particularly suitable for high-frequency applications, that is to say for applications in which very fast switching operations and the lowest possible reverse current when commutating are required. Silicon Schottky diodes are, however, limited to reverse voltages up to approximately 100 V due to their very large reverse current.
  • Such a material is, for example, silicon carbide (SiC).
  • SiC silicon carbide
  • An SiC Schottky diode is described in US Pat. No. 5,789,311. SiC semiconductor components or SiC Schottky diodes have excellent electrical and physical properties compared to semiconductor components made of silicon, some of which are shown below.
  • SiC has a 10 to 15 times greater breakthrough field strength than silicon. Due to the very high breakthrough field strength, SiC semiconductor components are very suitable dimension small, which advantageously also results in a very low ON resistance. SiC semiconductor components thus offer a particularly good compromise between high blocking capability and low forward voltage.
  • SiC has a significantly shorter charge carrier life than silicon
  • SiC is particularly suitable for semiconductor components for high-frequency applications, since significantly higher switching speeds can be achieved here.
  • SiC Schottky diode Due to the fact that an SiC Schottky diode has almost no minority charge carriers, the charge carriers can be removed very quickly during commutation, which enables very high switching speeds.
  • SiC Compared to silicon, SiC is extremely stable thermally - the sublimation temperature at SiC is above 1600 ° C - and has a higher thermal conductivity by a factor of 3. Particularly due to the fact that SiC has a very large band gap and the associated low intrinsic concentration, SiC is particularly suitable for applications at high temperatures.
  • a major disadvantage of semiconductor components made of SiC is that typically very high temperatures (> 1500 ° C.) are required for the healing and activation of implanted doping regions, which are required for processing such SiC semiconductor components in conventional production facilities based on silicon technology usually do not allow.
  • the object of the present invention to provide an edge termination for a SiC semiconductor component and a Schottky diode, which can be produced as far as possible while circumventing the processing difficulties described above. Another The object is to specify a method for producing a Schottky diode with such an edge termination.
  • the product-related tasks are solved according to the invention by an edge seal with the features of claim 1 and by a Schottky diode with the features of claim 2.
  • the process-related problem is solved by a method having the features of patent claim 12.
  • all process steps can be processed at a temperature ( ⁇ 1250 ° C.) typical in silicon technology for the production of edge closures in SiC semiconductor components. These process steps can be carried out in a conventional silicon production line. With the exception of the SiC base material production and the production of the epitaxial layer, SiC Schottky diodes in particular can be manufactured entirely independently of the known difficulties of SiC technology.
  • FIG. 1 shows a first partial section of a SiC Schottky diode with an edge termination according to the invention, which contains a Zener diode chain;
  • FIG. 2 shows a top view of the layout of a SiC Schottky diode in which a single (a) or four (b) spiral zener diode chain is provided in the edge region;
  • FIG. 3 shows a second partial section of a SiC Schottky diode with an edge termination according to the invention, which contains a Zener diode chain and field plates arranged in between;
  • FIG. 4 shows a top view of the layout of a SiC Schottky diode in which the edge termination contains a Zener diode chain with field plates arranged in between;
  • Figure 5 shows an advantageous method for producing an SiC Schottky diode according to the invention with edge termination using various process steps.
  • SiC Schottky diodes The semiconductor components described in more detail below are SiC Schottky diodes. However, the invention is not limited exclusively to SiC Schottky diodes, but can also be used very advantageously in the context of the invention with all other SiC semiconductor components, such as, for example, pn diodes, MOSFETs, bipolar transistors or the like.
  • Figure 1 shows a partial section of the edge termination of a SiC Schottky diode, in which a Zener diode chain is provided for the edge termination.
  • 1 denotes the semiconductor body of a semiconductor component designed as a Schottky diode.
  • the Schottky diode has an anode connection A and a cathode connection K, which are arranged on opposite sides of the semiconductor body 1.
  • the SiC-containing semiconductor body 1 the polytype of which is not described in the present exemplary embodiment and is also not relevant to the invention, has an inner zone 2 heavily n-doped in the present exemplary embodiment.
  • a large-area cathode electrode 3 is applied to the inner zone 2 and thus to the rear surface 4 of the semiconductor body 1.
  • the cathode electrode 3 is connected to the cathode connection K.
  • a weakly n-doped epitaxial layer 5 is provided on the anode side and adjoins the inner zone 2 and the front surface 6 over the entire width of the semiconductor body 1.
  • the Schottky diode in FIG. 1 has an anode electrode 7 connected to the anode connection A in the central area on the front surface 6. This central area is also referred to below as the active area AB of the semiconductor component.
  • the anode electrode 7 is applied to the epitaxial layer 3 over a large area in the central region such that these together form a Schottky contact 8 in a known manner.
  • the anode electrode 7 is designed in such a way that it takes a set course towards the edge and there has the shape of a field plate 7.
  • the areas outside the active area AB of the Schottky diode are also referred to below as the edge area RB.
  • An insulation layer 9, which contains silicon dioxide, for example, is provided over a large area in the edge region RB.
  • the Schottky diode according to FIG. 1 has a space charge zone stop 10.
  • This space charge zone stop 10 is arranged in the outermost edge region RB of the semiconductor component, that is to say directly in front of its sawing edge.
  • the space charge zone stopper 10 is designed in a known manner as a single-stage substrate contact electrode 10 which rises towards the active region AB and which typically forms an ohmic contact with the substrate of the semiconductor body.
  • the substrate contact electrode 10 is typically metallic, can however, it can also be designed as a polysilicon electrode or, depending on the application, also omitted.
  • a diode chain 11 is provided on the insulation layer 9 in the edge region RB of the semiconductor component.
  • the diode chain 11 is spaced from the semiconductor body 1 via the insulation layer 10.
  • the diode chain 11 is connected to the anode electrode 7 towards the active region AB of the semiconductor component and towards the edge to the substrate contact electrode 10. In the event that the substrate contact electrode 10 has been omitted, this outermost layer 12 of the diode chain 11 can also be connected directly to the semiconductor substrate.
  • the diode chain consists of a multiplicity of adjoining semiconductor layers 12 of alternating conduction type, with two adjoining semiconductor layers 12 each forming a pn diode.
  • Any semiconductor material for example silicon, gallium arsenide or the like, can be selected as the semiconductor material of the semiconductor layers 12, as required.
  • the diodes of the diode chain 11 are designed as a Zener diode.
  • the configuration of the diode chain 11 with zener diodes is particularly advantageous since, depending on their dimensioning or doping concentration, zener diodes can have a breakdown voltage in the range from 6 V to 60 V.
  • the breakdown voltage in Zener diodes is generally a function of temperature. In the case of Zener diodes in particular, this temperature dependence of the breakdown voltage is very low if the breakdown voltage of the respective Zener diodes is selected. Specifically, this means that, in particular in the case of Zener diodes in the transition region between Zener breakdown and avalanche breakdown, with very small breakdown voltages, the temperature dependence can be almost avoided.
  • the individual semiconductor layers 12 have the same width and thus an equidistant grid. In this way, a linear potential reduction in the semiconductor body 1 can be ensured.
  • the widths of the semiconductor layers 12 need not be the same. It would of course also be conceivable for the semiconductor layers 12 of the diode chain 11 to have a non-equidistant grid, in which, for example, the individual semiconductor layers 12 have a decreasing grid toward the edge. In this case, depending on the application, a non-linear, for example parabolic potential reduction of the edge termination in the semiconductor body 1 can be achieved.
  • FIG. 2 shows two plan views each of a Schottky diode in which diode chains 11 according to the invention are provided in the edge region RB of the semiconductor component.
  • a single diode chain 11 is provided, which is constructed from a multiplicity of equidistantly arranged semiconductor layers 12 with an alternating conductivity type.
  • This single diode chain 11 is formed in the edge region RB of the semiconductor component in a spiral shape with an outwardly increasing distance from the active region AB.
  • FIG. 2 (b) shows a Schottky diode in which a total of four spiral-shaped diode chains 11 are provided in the edge region RB of the semiconductor component.
  • the diode chains 11 are each connected to the anode metallization 7 and to the substrate contact electrode 10.
  • an edge termination with one or more spirally arranged diode chains 11 is provided.
  • these diode chains 11 can also be realized in a different way, for example by means of one or more meandering, staggered or otherwise nested diode chains 11.
  • the potential in the edge region RB can be gradually and definedly reduced.
  • this edge area RB can be reduced to a minimal area in the case of a generic, high-blocking semiconductor component.
  • FIG. 3 shows the partial section of a semiconductor component designed as a Schottky diode, in which a plurality of diode chains with field plates arranged in between are provided as the edge termination.
  • the Schottky diode in FIG. 3 has an edge termination, in which a plurality, in the present exemplary embodiment three, of diode chains 11 which are spaced apart from one another are provided. Two adjacent diode chains 11 are connected to one another here via a field plate 13. The outermost diode chains 11 are each connected in a known manner to the anode electrode 7 or the substrate contact electrode 10.
  • the field plates are typically designed in the form of a metallic conductor track, but they can also be implemented using a metal silicide or polysilicon.
  • field plates 13 are arranged in the edge region RB where the electric field takes a steeply increasing course.
  • field plate rings 14 it is sufficient to use only a single diode chain 11, which is intended to determine the respective potentials of the field plates.
  • a semiconductor component with field plates 13 or field plate rings 14 in its edge region RB its reverse current can be reduced in a defined manner.
  • the different field plates 13 do not necessarily have to short-circuit two diode chains 11 spaced from one another; it would also be conceivable for a field plate 13 to be connected to a single or to two adjacent semiconductor layers 12.
  • the layout of an SiC Schottky diode designed according to FIG. 3 is shown in the top view in FIG. 4.
  • the field plates 13 are arranged as concentric, annular conductor tracks 14 around the active region AB of the semiconductor component.
  • the particular advantage of these so-called field plate rings lies in the fact that only a single diode chain 11 has to be provided between the active region AB and the substrate contact electrode 10, which is necessary for determining the respective potentials of the field plate rings 14.
  • the field plate rings 14 serve the purpose of bundling or channeling the potential lines in the edge region RB of the semiconductor component.
  • the Schottky diode has a rectangular layout in the plan view of FIGS. 2 and 4.
  • the present invention is not to be applied to such rectangular layouts of semiconductor components. limits, but rather can be applied to any type of round, oval, hexagonal, triangular or the like designed layouts.
  • a semiconductor body 1 containing SiC, the inner zone 2 of which has a strong n-doping, is provided.
  • a weakly n-doped epitaxial layer 5 is applied to the surface of the inner zone 2 via an epitaxy process (FIG. 5 (a)).
  • an insulating material is applied to the second surface 6 of the semiconductor body 1 that is created and structured in such a way that an insulation layer 9 is produced in the edge region RB (FIG. 5 (b)).
  • the insulating material is advantageously silicon dioxide, but can consist of any other insulation material, for example silicon nitride.
  • Polysilicon is applied to the insulation layer 9 in the edge region RB of the semiconductor body 1 (FIG. 5 (d)).
  • the polysilicon is structured and implanted in such a way that a multiplicity of semiconductor layers 12 result in alternating conductivity types.
  • Metallization is applied to the second surface 6 of the semiconductor body 1 in order to produce the anode electrode 7 (FIG. 5 (e)).
  • the anode electrode 7 is temperature-treated in such a way that a Schottky contact 8 is formed at this point from the interaction of the epitaxial layer 5 and the anode electrode 7.
  • the electrode electrode 7 is also structured such that it is connected to one of the semiconductor layers 12 of the diode chain 11.
  • At least one further semiconductor layer 11 is also connected to the semiconductor body 1 via the substrate contact electrode 10 (FIG. 5 (f)).
  • a cathode electrode 3 forming an ohmic contact is applied over a large area (FIG. 5 (c) and (g)).
  • Electrodes 3, 7, 10 has a metallization which serves to improve the electrical properties or to strengthen the contacts.
  • Metal alloys with sufficiently good adhesive properties in SiC contain at least some of tungsten, molybdenum, platinum, chromium, titanium, nickel, iron and the like.
  • a thin contact metallization consisting of a metal alloy just described is first applied directly to the semiconductor body and at a temperature of approximately
  • This metallization applied to the thin metallization serves to strengthen the contacts, that is to say to improve the bandability or solderability of the contacts, and to achieve good transverse conductivity.
  • SiC silicon dioxide on the semiconductor body 1.
  • this process takes an extremely long time. Because of this, it is advantageous if first a thin thermal silicon dioxide on the surface 6 of the semiconductor body. pers 1 is generated. A field oxide generated, for example, by deposition can then be applied to this thermal oxide.
  • the edge termination according to the invention was described using a Schottky diode.
  • the present invention is not restricted exclusively to SiC Schottky diodes. Rather, the present invention can also be applied to pn diodes, pin diodes, MOSFETs and the like.
  • the edge termination according to the invention is of interest for all semiconductor components in which high reverse voltages are relevant.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

Bordure terminale pour un composant à semi-conducteur doté d'un corps semi-conducteur (1) contenant du carbure de silicium, ladite bordure terminale comprenant au moins une chaîne de diodes (11) isolées par rapport au corps semi-conducteur (1), qui comporte une pluralité de couches semi-conductrices (12) à type de conduction alternant.
EP00904821A 1999-01-15 2000-01-03 Bordure terminale pour un composant a semi-conducteur, diode a barriere de schottky dotee d'une bordure terminale et procede de fabrication d'une diode a barriere de schottky Withdrawn EP1064684A1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE19901385 1999-01-15
DE19901385 1999-01-15
PCT/DE2000/000024 WO2000042661A1 (fr) 1999-01-15 2000-01-03 Bordure terminale pour un composant a semi-conducteur, diode a barriere de schottky dotee d'une bordure terminale et procede de fabrication d'une diode a barriere de schottky

Publications (1)

Publication Number Publication Date
EP1064684A1 true EP1064684A1 (fr) 2001-01-03

Family

ID=7894369

Family Applications (1)

Application Number Title Priority Date Filing Date
EP00904821A Withdrawn EP1064684A1 (fr) 1999-01-15 2000-01-03 Bordure terminale pour un composant a semi-conducteur, diode a barriere de schottky dotee d'une bordure terminale et procede de fabrication d'une diode a barriere de schottky

Country Status (4)

Country Link
US (1) US6320205B1 (fr)
EP (1) EP1064684A1 (fr)
JP (1) JP2002535839A (fr)
WO (1) WO2000042661A1 (fr)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1032046A1 (fr) * 1999-02-01 2000-08-30 Fuji Electric Co., Ltd. Dispositif semi-conducteur comportant une structure de façonnage de champ en couche mince
US6573128B1 (en) * 2000-11-28 2003-06-03 Cree, Inc. Epitaxial edge termination for silicon carbide Schottky devices and methods of fabricating silicon carbide devices incorporating same
US20030222272A1 (en) * 2002-05-30 2003-12-04 Hamerski Roman J. Semiconductor devices using minority carrier controlling substances
US9515135B2 (en) 2003-01-15 2016-12-06 Cree, Inc. Edge termination structures for silicon carbide devices
US7026650B2 (en) * 2003-01-15 2006-04-11 Cree, Inc. Multiple floating guard ring edge termination for silicon carbide devices
US20060006394A1 (en) * 2004-05-28 2006-01-12 Caracal, Inc. Silicon carbide Schottky diodes and fabrication method
US7812441B2 (en) 2004-10-21 2010-10-12 Siliconix Technology C.V. Schottky diode with improved surge capability
US7394158B2 (en) * 2004-10-21 2008-07-01 Siliconix Technology C.V. Solderable top metal for SiC device
US7183626B2 (en) * 2004-11-17 2007-02-27 International Rectifier Corporation Passivation structure with voltage equalizing loops
JP2006310769A (ja) * 2005-02-02 2006-11-09 Internatl Rectifier Corp Ｉｉｉ族窒化物一体化ショットキおよび電力素子
US9419092B2 (en) * 2005-03-04 2016-08-16 Vishay-Siliconix Termination for SiC trench devices
US7834376B2 (en) * 2005-03-04 2010-11-16 Siliconix Technology C. V. Power semiconductor switch
US8901699B2 (en) 2005-05-11 2014-12-02 Cree, Inc. Silicon carbide junction barrier Schottky diodes with suppressed minority carrier injection
US7768092B2 (en) * 2005-07-20 2010-08-03 Cree Sweden Ab Semiconductor device comprising a junction having a plurality of rings
US8368165B2 (en) * 2005-10-20 2013-02-05 Siliconix Technology C. V. Silicon carbide Schottky diode
US7586156B2 (en) 2006-07-26 2009-09-08 Fairchild Semiconductor Corporation Wide bandgap device in parallel with a device that has a lower avalanche breakdown voltage and a higher forward voltage drop than the wide bandgap device
JP2009545885A (ja) * 2006-07-31 2009-12-24 ヴィシェイ−シリコニックス ＳｉＣショットキーダイオード用モリブデンバリア金属および製造方法
JP5170614B2 (ja) * 2006-12-26 2013-03-27 日立金属株式会社 磁気センサ及び回転角度検出装置
US8174051B2 (en) * 2007-06-26 2012-05-08 International Rectifier Corporation III-nitride power device
JP5359056B2 (ja) * 2008-06-25 2013-12-04 日立金属株式会社 磁気センサ及び回転角度検出装置
JP2012221976A (ja) * 2011-04-04 2012-11-12 Toyota Central R&D Labs Inc 半導体装置
JP5924313B2 (ja) 2012-08-06 2016-05-25 株式会社デンソー ダイオード
TWI618240B (zh) * 2015-11-27 2018-03-11 世界先進積體電路股份有限公司 半導體裝置
US9607944B1 (en) 2016-01-26 2017-03-28 Vanguard International Semiconductor Corporation Efficient layout placement of a diode
DE102017107952B4 (de) * 2017-04-12 2022-07-07 Infineon Technologies Ag Herstellungsverfahren für eine halbleitervorrichtung
DE102017108047A1 (de) 2017-04-13 2018-10-18 Infineon Technologies Ag Halbleitervorrichtung mit struktur zum schutz gegen elektrostatische entladung

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5266831A (en) * 1991-11-12 1993-11-30 Motorola, Inc. Edge termination structure
JP3207615B2 (ja) * 1992-06-24 2001-09-10 株式会社東芝 半導体装置
US5382825A (en) * 1993-01-07 1995-01-17 Harris Corporation Spiral edge passivation structure for semiconductor devices
JPH07326743A (ja) * 1994-05-31 1995-12-12 Fuji Electric Co Ltd プレーナ型半導体素子
US5486718A (en) * 1994-07-05 1996-01-23 Motorola, Inc. High voltage planar edge termination structure and method of making same
JPH0897441A (ja) * 1994-09-26 1996-04-12 Fuji Electric Co Ltd 炭化けい素ショットキーダイオードの製造方法
JP3555250B2 (ja) * 1995-06-23 2004-08-18 株式会社デンソー 車両用交流発電機及びショットキバリアダイオード
JP4960540B2 (ja) * 1998-11-05 2012-06-27 富士電機株式会社 半導体装置

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
None *
See also references of WO0042661A1 *

Also Published As

Publication number Publication date
US6320205B1 (en) 2001-11-20
JP2002535839A (ja) 2002-10-22
WO2000042661A1 (fr) 2000-07-20

Similar Documents

Publication Publication Date Title
EP1064684A1 (fr) Bordure terminale pour un composant a semi-conducteur, diode a barriere de schottky dotee d'une bordure terminale et procede de fabrication d'une diode a barriere de schottky
DE10259373B4 (de) Überstromfeste Schottkydiode mit niedrigem Sperrstrom
EP0992070B1 (fr) Composant a semi-conducteur de puissance et procede permettant de le produire
EP0772889B1 (fr) Composant a semi-conducteur a terminaison marginale a haut pouvoir de blocage
DE112017003754B4 (de) Halbleitervorrichtung und verfahren zum herstellen einer halbleitervorrichtung
DE19811297B4 (de) MOS-Halbleitervorrichtung mit hoher Durchbruchspannung
EP1222694B1 (fr) Dispositif semi-conducteur en SiC à contact Schottky et sa méthode de fabrication
DE112011104322T5 (de) Halbleitervorrichtung und Verfahren zur Herstellung einer Halbleitervorrichtung
DE112011104631B4 (de) Halbleitervorrichtung
EP0715771A1 (fr) TRANSISTOR SiC A EFFET DE CHAMP ET SON PROCEDE DE FABRICATION
WO1999053550A1 (fr) Element de terminaison marginal haute tension pour structures de type planar
EP1946377A2 (fr) Diode de puissance sic-pn
DE19701189A1 (de) Halbleiterbauteil
DE102019129537A1 (de) Sic-leistungs-halbleitervorrichtung mit integriertem schottky-übergang
EP0760528B1 (fr) Dispositif semi-conducteur sur base de silicium avec bordure à blocage élevé
DE112011100533T5 (de) Halbleitervorrichtung
DE102011080258A1 (de) Super-Junction-Schottky-Oxid-PiN-Diode
EP0913000B1 (fr) Composant a semiconducteur pouvant etre commande par effet de champ
DE112006001280B4 (de) Halbleitervorrichtung und Verfahren zu deren Herstellung
EP1092238A1 (fr) Plaquette de semiconducteur universelle pour composants a semiconducteur haute tension
EP0551625A1 (fr) Diode à puissance
EP1488465B1 (fr) Structure semiconductrice comportant un element de commutation et un element marginal
DE102005046706B4 (de) JBS-SiC-Halbleiterbauelement
WO2000016403A1 (fr) Dispositif a semiconducteur et structure semiconductrice a contact
EP0600241A2 (fr) Diode commandée par MOS

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 20001010

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE

RBV Designated contracting states (corrected)

Designated state(s): AT DE FR GB IE IT

17Q First examination report despatched

Effective date: 20061215

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN

18D Application deemed to be withdrawn

Effective date: 20070626