US6320205B1 - Edge termination for a semiconductor component, a schottky diode having an edge termination, and a method for producing the schottky diode - Google Patents

Edge termination for a semiconductor component, a schottky diode having an edge termination, and a method for producing the schottky diode Download PDF

Info

Publication number
US6320205B1
US6320205B1 US09/663,570 US66357000A US6320205B1 US 6320205 B1 US6320205 B1 US 6320205B1 US 66357000 A US66357000 A US 66357000A US 6320205 B1 US6320205 B1 US 6320205B1
Authority
US
United States
Prior art keywords
semiconductor
semiconductor body
diode
edge termination
chain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US09/663,570
Other languages
English (en)
Inventor
Frank Pfirsch
Roland Rupp
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies AG
Original Assignee
Infineon Technologies AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies AG filed Critical Infineon Technologies AG
Assigned to INFINEON TECHNOLOGIES AG reassignment INFINEON TECHNOLOGIES AG ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: RUPP, ROLAND, PFIRSCH, FRANK
Application granted granted Critical
Publication of US6320205B1 publication Critical patent/US6320205B1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402Field plates
    • H01L29/405Resistive arrangements, e.g. resistive or semi-insulating field plates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1608Silicon carbide
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861Diodes
    • H01L29/872Schottky diodes

Definitions

  • the present invention relates to an edge termination for a semiconductor component formed of silicon carbide and to a Schottky diode having an edge termination.
  • the present invention also relates to a method for producing a semiconductor component having such an edge termination.
  • the invention relates predominantly to asymmetrically blocking semiconductor components having planar edge terminations.
  • the invention relates in particular to semiconductor components in the form of Schottky diodes. Such semiconductor components and their method of operation have been known for a long time and require no further description.
  • edge terminations are provided, which are disposed in the form of rings and typically completely enclose the semiconductor component. The edge terminations weaken or reduce local field strength peaks in the edge area of the semiconductor component. Undesirable voltage breakdowns in the edge area can thus be avoided, and the semiconductor component remains serviceable.
  • U.S. Pat. No. 5,486,718 describes edge terminations in which chains of zener diodes containing polysilicon are disposed in a spiral shape in the edge area. These zener diodes are intended to control the potential profile of the electrical field in the edge area.
  • edge terminations for Schottky diodes are described.
  • one of the edge terminations is in the form of a guard ring that surrounds the Schottky contact and forms a pn-junction with the remaining semiconductor region.
  • the Schottky contact can also be provided directly with an edge termination formed from field plates, that is to say without a pn-junction.
  • Schottky diodes are majority-carrier semiconductor components and are thus particularly suitable for high-frequency applications, that is to say for applications which require very fast switching processes and a reverse current which is as low as possible during off-commutation. Silicon Schottky diodes are, however, limited to reverse voltages of about 100 V owing to their very large reverse current.
  • SiC silicon carbide
  • SiC Schottky diode SiC semiconductor components and SiC Schottky diodes have excellent electrical and physical characteristics in comparison with those semiconductor components produced from silicon, and a number of these will be described in the following text.
  • SiC semiconductor components Owing to the very high breakdown field strength, SiC semiconductor components can be made very small, which advantageously also results in a very low ON resistance. SiC semiconductor components thus offer a particularly good compromise between a high blocking capability and a low forward voltage.
  • SiC has a considerably shorter charge carrier life than silicon
  • SiC is particularly suitable for semiconductor components for radio-frequency applications, since considerably higher switching speeds can be achieved here.
  • an SiC Schottky diode has virtually no minority charge carriers, the charge carriers can be depleted very quickly during off-commutation, thus making high switching speeds possible.
  • SiC is thermally extremely stable-SiC has a sublimation temperature of more than 1600° C.—and its thermal conductivity is greater by a factor of 3.
  • SiC has a very wide energy gap and, associated with this, a low intrinsic concentration
  • SiC is particularly suitable for applications at high temperatures.
  • a major disadvantage of semiconductor components composed of SiC is, however, that high temperatures (>1500° C.) are typically required to heal and activate implanted doped regions, and these high temperatures generally do not allow such SiC semiconductor components to be processed in conventional workshops set up for silicon technology.
  • a semiconductor component containing a semiconductor body formed of silicon carbide; an insulation layer disposed on the semiconductor body; and an edge termination having at least one diode chain disposed on the insulation layer and thereby being insulated from the semiconductor body.
  • the diode chain has a large number of semiconductor layers formed of alternating conductivity types.
  • a Schottky diode containing a semiconductor body of a first conductivity type, formed of silicon carbide, and having a first surface and a second surface.
  • the semiconductor body has a dopant layer of the first conductivity type and a top surface of the dopant layer defines the first surface of the semiconductor body.
  • the dopant layer has a dopant concentration lower than that of the remainder of the semiconductor body.
  • a metallic first electrode is disposed on the first surface and forms a Schottky contact with the semiconductor body.
  • a second electrode contacting the semiconductor body on the second surface is provided.
  • An insulation layer is disposed on the first surface of the semiconductor body.
  • a reference ground potential terminal is provided.
  • An edge termination having at least one diode chain is disposed on the insulation layer and thereby is insulated from the semiconductor body.
  • the diode chain has a large number of semiconductor layers formed of alternating conductivity types, the diode chain is connected to the first electrode and to the reference-ground potential terminal.
  • the present invention allows all the process steps for the production of the edge terminations for the SiC semiconductor components to be carried out at a temperature ( ⁇ 1250° C.) which is typical in silicon technology. These process steps can be carried out in a conventional silicon production line.
  • SiC Schottky diodes can thus be manufactured, with the exception of the production of the basic SiC material and the production of the epitaxial layer, entirely independently of the known difficulties with SiC technology.
  • the diode chain is a single, continuous chain of mutually adjacent ones of the semiconductor layers having alternating conductivity types.
  • At least one field plate is connected to at least one of the semiconductor layers of the diode chain.
  • the semiconductor body has an active area
  • the field plate is one of a plurality of field plates disposed as concentric interconnects, circular rings, around the active area of the semiconductor body.
  • the semiconductor layers of the diode chain have one of an equidistant grid and a non-equidistant grid with a grid size reducing toward an edge of the semiconductor body.
  • the semiconductor layers of the diode chain form a large number of zener diodes.
  • the diode chain in a lateral projection, has at least one of a spiral and a meandering shape, and is interleaved.
  • the semiconductor layers contain at least one of doped polysilicon and doped monocrystalline silicon.
  • the reference ground potential terminal is at a cathode potential of the Schottky diode.
  • a method for producing a Schottky diode includes the step of providing a semiconductor body having a first surface and a second surface.
  • the semiconductor body has a doped layer of a first conductivity type formed using a epitaxial process and a top surface of the doped layer defines the first surface of the semiconductor body.
  • the doped layer has a lower dopant concentration than a remainder of the semiconductor body.
  • An oxide is applied to the first surface of the doped layer, and the oxide is structured to form an insulation layer in an edge area.
  • Polysilicon is applied to the insulation layer in the edge area.
  • the polysilicon is structured and implanted such that a large number of semiconductor layers having alternating conductivity types are formed.
  • a metallization forming a Schottky contact and a first electrode is applied to the first surface.
  • the first electrode is structured such that it is connected to at least one of the semiconductor layers.
  • a second electrode forming a resistive contact is formed over a large area of the second surface of the semiconductor body.
  • a further metallization which can be soldered or bonded well and is used for contact reinforcement to at least one of the first electrode and the second electrode.
  • the insulation layer has a thermally formed first oxide applied directly to the first surface of the semiconductor body, and a second oxide, produced by deposition, is applied to the first oxide.
  • FIG. 1 is a diagrammatic, partial sectional view of an SiC Schottky diode having an edge termination according to the invention, which contains a zener diode chain;
  • FIGS. 2A and 2B are plan views of a layout of the SiC Schottky diode, in which a single zener diode chain (FIG. 2A) and four zener diode chains (FIG. 2 B), disposed in a spiral shape is or are provided in the edge area;
  • FIG. 3 is a partial sectional view of the SiC Schottky diode having the edge termination according to the invention, which contains the zener diode chain and field plates disposed in between;
  • FIG. 4 is a plan view of the layout of the SiC Schottky diode, in which the edge termination contains the zener diode chain with field plates disposed in between;
  • FIGS. 5A-5G are sectional views of a method for producing the SiC Schottky diode according to the invention and having the edge termination, on the basis of various method steps.
  • FIG. 1 there is shown a part of a silicon carbide (SiC) Schottky diode.
  • SiC silicon carbide
  • the invention is not exclusively limited to SiC Schottky diodes but, within the scope of the invention, can also be used highly advantageously with all other SiC semiconductor components, such as pn diodes, MOSFETS, bipolar transistors or the like.
  • FIG. 1 shows a partial section of an edge termination of the SiC Schottky diode, in which a zener diode chain is provided for the edge termination.
  • the Schottky diode has an anode connection A and a cathode connection K, which are disposed on opposite sides of a semiconductor body 1 .
  • the semiconductor body 1 which contains SiC and whose poly type will not be described in any more detail in the present exemplary embodiment and is also irrelevant to the invention, has an inner zone 2 , which is heavily n-doped in the present exemplary embodiment.
  • a large-area cathode electrode 3 is applied to the inner zone 2 , and thus to a rear-face surface of the semiconductor body 1 .
  • the cathode electrode 3 is connected to the cathode connection K.
  • a lightly n-doped epitaxial layer 5 is provided on the anode side, and is adjacent to the inner zone 2 and to a front-face surface 6 over the entire width of the semiconductor body 1 .
  • the Schottky diode in FIG. 1 has an anode electrode 7 which is connected to the anode connection A.
  • the central area will also be referred to as active area AB of the semiconductor component.
  • the anode electrode 7 is applied over a large area in the central area to the epitaxial layer 5 in such a way that they together form a Schottky contact 8 , in a known manner.
  • the anode electrode 7 is configured in such a way that it has a rising profile toward the edge, where it has the form of a field plate 7 ′.
  • the areas outside the active area AB of the Schottky diode are also referred to as an edge area RB in the following text.
  • An insulation layer 9 that, for example, contains silicon dioxide, is provided over a large area in the edge area RB.
  • the Schottky diode shown in FIG. 1 has a space charge zone stopper 10 .
  • the space charge zone stopper 10 is disposed in an outermost edge area RB of the semiconductor component, that is to say immediately in front of its sawn edge.
  • the space charge zone stopper 10 is configured in a known manner as a substrate contact electrode 10 , which rises toward the active area AB, is in the form of a single step, and typically forms a resistive contact with the substrate of the semiconductor body 1 .
  • the substrate contact electrode 10 is typically metallic, but may also be in the form of a polysilicon electrode, or may even be omitted, depending on the application.
  • a diode chain 11 is provided on the insulation layer 9 in the edge area RB of the semiconductor component.
  • the diode chain 11 is in this case kept at a distance from the semiconductor body 1 via the insulation layer 9 .
  • the diode chain 11 is connected to the anode electrode 7 , and toward the edge it is connected to the substrate contact electrode 10 .
  • an outermost layer 12 of the diode chain 11 may also be connected directly to the semiconductor substrate.
  • the diode chain 11 contains a large number of mutually adjacent semiconductor layers 12 of alternating conductivity types, with two mutually adjacent semiconductor layers 12 in each case forming a pn diode.
  • Any desired semiconductor material for example silicon, gallium arsenide or the like, may be chosen as the semiconductor material for the semiconductor layers 12 , depending on the requirement.
  • the diodes in the diode chain 11 are assumed to be in the form of zener diodes. It is particularly advantageous to configure the diode chain 11 with zener diodes since, depending on their sizes and doping concentration, zener diodes may have a breakdown voltage in the range from 6 V to 60 V. The breakdown voltage of zener diodes is generally a function of the temperature.
  • the temperature dependency of the breakdown voltage is very small, if the breakdown voltage of the respective zener diodes is chosen. Specifically, this results in that, in the transitional region between zener breakdown and avalanche breakdown, and with very low breakdown voltages, the temperature dependency can be virtually avoided, particularly with zener diodes.
  • the individual semiconductor layers 12 have the same width and thus form an equidistant grid. This makes it possible to ensure that the potential is reduced linearly in the semiconductor body 1 .
  • the widths of the semiconductor layers 12 need not, however, be the same. It would, of course, also be feasible for the semiconductor layers 12 in the diode chain 11 to have a non-equidistant grid in which, for example, the individual semiconductor layers 12 have a decreasing grid size toward the edge. In this case, depending on the application, a non-linear reduction in potential, for example a parabolic reduction in potential, can be achieved for the edge termination in the semiconductor body 1 .
  • FIGS. 2A and 2B shows the Schottky diode in each of two plan views, in which the diode chains 11 according to the invention are provided in the edge area RB of the semiconductor component.
  • a single diode chain 11 is provided in FIG. 2A, which is formed from a large number of semiconductor layers 12 disposed at equal intervals and having alternating conductivity types.
  • the single diode chain 11 in this case has a spiral shape in the edge area RB of the semiconductor component, with the distance from the active area AB increasing toward the outside.
  • FIG. 2B shows the Schottky diode in which a total of four diode chains 11 disposed in a spiral shape are provided in the edge area RB of the semiconductor component.
  • the diode chains 11 are connected to the anode metallization 7 and to the substrate contact electrode 10 .
  • the edge termination is provided having one or more of the diode chains 11 disposed in a spiral shape.
  • the diode chains 11 may, of course, also be provided in any other way, for example by one or more meandering, or staggered diode chains 11 , or diode chains 11 interleaved in one another in some other way.
  • diode chains 11 having a large number of the semiconductor layers 12 which are disposed in the edge area RB of a semiconductor component makes it possible to reduce the potential in the edge area RB in steps and in a defined manner.
  • the use of diode chains 11 interleaved in one another in a spiral shape, a meandering shape or in some other way in the edge area RB allows the edge area RB to be reduced to a minimal area in a high-blocking-capability semiconductor component of this generic type.
  • FIG. 3 shows a partial section of the semiconductor component in the form of the Schottky diode, in which a number of the diode chains 11 with field plates 13 disposed in between are provided as the edge termination.
  • the Schottky diode in FIG. 3 has an edge termination in which a number of the diode chains 11 , three in the present exemplary embodiment, are provided, which are kept at a distance from one another.
  • two adjacent diode chains 11 are in each case connected to one another via the field plate 13 .
  • the outside diode chains 11 are each connected in a known manner to the anode electrode 7 or the substrate contact electrode 10 .
  • the field plates 13 are typically in the form of a metallic interconnect, but they can also be provided by a metal silicide or by polysilicon.
  • the field plates 13 are disposed in the edge area RB, where the electrical field has a sharply rising profile.
  • the electrical field has a sharply rising profile.
  • the reverse current in a semiconductor component having field plates 13 and/or field plate rings 14 in its edge area RB can be reduced in a defined manner.
  • the various field plates 13 need not necessarily short out two diode chains 11 that are kept at a distance from one another. It would also be feasible for one field plate 13 in each case to be connected to an individual semiconductor layer 12 , or to two semiconductor layers 12 adjacent to one another.
  • the layout of the SiC Schottky diode in the form shown in FIG. 3 is illustrated in plan view in FIG. 4 .
  • the field plates 13 are in this case disposed as concentric interconnects 14 , in the form of rings, around the active area AB of the semiconductor component.
  • the particular advantage of these so-called field plate rings 14 is that, in this case, only a single diode chain 11 need be provided between the active area AB and the substrate contact electrode 10 , this being required to fix the respective potentials of the field plate rings 14 .
  • the field plate rings 14 in this case have the purpose of focusing or channeling the potential lines in the edge area RB of the semiconductor component.
  • edge terminations for such SiC semiconductor components for example floating field rings with or without field plates.
  • the Schottky diode has a rectangular layout in the plan view shown in FIGS. 2 and 4.
  • the present invention is not intended to be limited to such rectangular layouts of semiconductor components but can, in fact, be used for any type of round, oval, hexagonal, triangular or other such layouts.
  • the semiconductor body 1 is provided which contains SiC, and whose inner zone 2 has heavy n-doping.
  • the lightly n-doped epitaxial layer 5 is applied to the surface of the inner zone 2 using an epitaxial process (FIG. 5 A).
  • An insulating material 9 is then applied to the second surface 6 of the semiconductor body 1 produced in this way, and is structured in such a way that the insulation layer 9 is produced in the edge area RB (FIG. 5 B).
  • the insulating material is advantageously silicon dioxide, but it may also be formed from any other insulation material, for example from silicon nitrite.
  • Polysilicon is applied to the insulation layer 9 in the edge area RB of the semiconductor body 1 (FIG. 5 D).
  • the polysilicon is structured and implanted in such a way that a large number of the semiconductor layers 12 of alternating conductivity types are produced.
  • Metallization is applied to the second surface 6 of the semiconductor body 1 in order to produce the anode electrode 7 (FIG. 5 E).
  • the anode electrode 7 is in this case heat-treated in such a way that the Schottky contact 8 is formed at this point from the interaction of the epitaxial layer 5 and the anode electrode 7 .
  • the anode electrode 7 is furthermore structured in such a way that it is connected to one of the semiconductor layers 12 of the diode chain 11 .
  • At least one further semiconductor layer 11 is additionally connected to the semiconductor body 1 via the substrate contact electrode 10 (FIG. 5 F).
  • the cathode electrode 3 which forms a resistive contact, is applied over a large area to the second surface 4 of the semiconductor body 1 via metallization (FIGS. 5 C and 5 G).
  • Electrodes 3 , 7 , 10 has metallization, which is used to improve the electrical characteristics or for reinforcing the contacts.
  • Metal alloys with sufficiently good adhesion characteristics for SiC contain at least a proportion of tungsten, molybdenum, platinum, chromium, titanium, nickel, iron and the like.
  • Thin contact metallization containing a metal alloy such as that just described is typically applied directly to the semiconductor body 1 first of all to produce a contact with SiC, and is treated at a temperature of about 900° C. The actual metal alloy for the appropriate electrode is then applied to the contact electrode.
  • the metallization which is applied to the thin metallization is used for contact reinforcement, that is to say to improve the capabilities for bonding or soldering the contacts, and to provide good transverse conductivity.
  • a major advantage of SiC is the capability to grow thermally produced silicon dioxide on the semiconductor body 1 . However, this process takes an extremely long time. Because of this, it is advantageous for a thin thermal silicon dioxide to be produced first on the surface 6 of the semiconductor body 1 . A field oxide that is produced, for example, by deposition, can then be applied to this thermal oxide.
  • the edge termination according to the invention has been explained with reference to a Schottky diode.
  • the present invention is not exclusively limited to SiC Schottky diodes.
  • the present invention can also be used with pn diodes, pin diodes, MOSFETs and the like.
  • the edge termination according to the invention is of interest generally for all semiconductor components in which high reverse voltages are relevant.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
US09/663,570 1999-01-15 2000-09-15 Edge termination for a semiconductor component, a schottky diode having an edge termination, and a method for producing the schottky diode Expired - Lifetime US6320205B1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE19901385 1999-01-15
DE19901385 1999-01-15
PCT/DE2000/000024 WO2000042661A1 (fr) 1999-01-15 2000-01-03 Bordure terminale pour un composant a semi-conducteur, diode a barriere de schottky dotee d'une bordure terminale et procede de fabrication d'une diode a barriere de schottky

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2000/000024 Continuation WO2000042661A1 (fr) 1999-01-15 2000-01-03 Bordure terminale pour un composant a semi-conducteur, diode a barriere de schottky dotee d'une bordure terminale et procede de fabrication d'une diode a barriere de schottky

Publications (1)

Publication Number Publication Date
US6320205B1 true US6320205B1 (en) 2001-11-20

Family

ID=7894369

Family Applications (1)

Application Number Title Priority Date Filing Date
US09/663,570 Expired - Lifetime US6320205B1 (en) 1999-01-15 2000-09-15 Edge termination for a semiconductor component, a schottky diode having an edge termination, and a method for producing the schottky diode

Country Status (4)

Country Link
US (1) US6320205B1 (fr)
EP (1) EP1064684A1 (fr)
JP (1) JP2002535839A (fr)
WO (1) WO2000042661A1 (fr)

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6573128B1 (en) * 2000-11-28 2003-06-03 Cree, Inc. Epitaxial edge termination for silicon carbide Schottky devices and methods of fabricating silicon carbide devices incorporating same
US20030222272A1 (en) * 2002-05-30 2003-12-04 Hamerski Roman J. Semiconductor devices using minority carrier controlling substances
US20040135153A1 (en) * 2003-01-15 2004-07-15 Sei-Hyung Ryu Multiple floating guard ring edge termination for silicon carbide devices and methods of fabricating silicon carbide devices incorporating same
US20060006394A1 (en) * 2004-05-28 2006-01-12 Caracal, Inc. Silicon carbide Schottky diodes and fabrication method
US20060175633A1 (en) * 2005-02-02 2006-08-10 Kinzer Daniel M III-nitride integrated schottky and power device
US20060197105A1 (en) * 2005-03-04 2006-09-07 Rossano Carta Power semiconductor switch
US20060214242A1 (en) * 2005-03-04 2006-09-28 International Rectifier Corporation Termination for SiC trench devices
US20070018171A1 (en) * 2005-07-20 2007-01-25 Christopher Harris Semiconductor device and a method for production thereof
US20070090481A1 (en) * 2005-10-20 2007-04-26 International Rectifier Corporation Silicon carbide schottky diode
US20080237608A1 (en) * 2006-07-31 2008-10-02 Giovanni Richieri Molybdenum barrier metal for SiC Schottky diode and process of manufacture
US20080286968A1 (en) * 2004-10-21 2008-11-20 Siliconix Technology C.V. Solderable top metal for silicon carbide semiconductor devices
US20090001424A1 (en) * 2007-06-26 2009-01-01 Jianjun Cao III-nitride power device
US8901699B2 (en) 2005-05-11 2014-12-02 Cree, Inc. Silicon carbide junction barrier Schottky diodes with suppressed minority carrier injection
US9412880B2 (en) 2004-10-21 2016-08-09 Vishay-Siliconix Schottky diode with improved surge capability
US9515135B2 (en) 2003-01-15 2016-12-06 Cree, Inc. Edge termination structures for silicon carbide devices
US9607944B1 (en) 2016-01-26 2017-03-28 Vanguard International Semiconductor Corporation Efficient layout placement of a diode
TWI618240B (zh) * 2015-11-27 2018-03-11 世界先進積體電路股份有限公司 半導體裝置
US20180301338A1 (en) * 2017-04-12 2018-10-18 Infineon Technologies Ag Semiconductor Device with Metallization Structure and Method for Manufacturing Thereof
US11302781B2 (en) 2017-04-13 2022-04-12 Infineon Technologies Ag Semiconductor device having an electrostatic discharge protection structure

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1032046A1 (fr) * 1999-02-01 2000-08-30 Fuji Electric Co., Ltd. Dispositif semi-conducteur comportant une structure de façonnage de champ en couche mince
US7183626B2 (en) 2004-11-17 2007-02-27 International Rectifier Corporation Passivation structure with voltage equalizing loops
US7586156B2 (en) 2006-07-26 2009-09-08 Fairchild Semiconductor Corporation Wide bandgap device in parallel with a device that has a lower avalanche breakdown voltage and a higher forward voltage drop than the wide bandgap device
JP5170614B2 (ja) * 2006-12-26 2013-03-27 日立金属株式会社 磁気センサ及び回転角度検出装置
JP5359056B2 (ja) * 2008-06-25 2013-12-04 日立金属株式会社 磁気センサ及び回転角度検出装置
JP2012221976A (ja) * 2011-04-04 2012-11-12 Toyota Central R&D Labs Inc 半導体装置
JP5924313B2 (ja) 2012-08-06 2016-05-25 株式会社デンソー ダイオード

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5486718A (en) * 1994-07-05 1996-01-23 Motorola, Inc. High voltage planar edge termination structure and method of making same
US5780996A (en) * 1995-06-23 1998-07-14 Nippondenso Co., Ltd. Alternating current generator and schottky barrier diode
US5789311A (en) * 1994-09-26 1998-08-04 Fuji Electric Co., Ltd. Manufacturing method of SiC Schottky diode

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5266831A (en) * 1991-11-12 1993-11-30 Motorola, Inc. Edge termination structure
JP3207615B2 (ja) * 1992-06-24 2001-09-10 株式会社東芝 半導体装置
US5382825A (en) * 1993-01-07 1995-01-17 Harris Corporation Spiral edge passivation structure for semiconductor devices
JPH07326743A (ja) * 1994-05-31 1995-12-12 Fuji Electric Co Ltd プレーナ型半導体素子
JP4960540B2 (ja) * 1998-11-05 2012-06-27 富士電機株式会社 半導体装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5486718A (en) * 1994-07-05 1996-01-23 Motorola, Inc. High voltage planar edge termination structure and method of making same
US5789311A (en) * 1994-09-26 1998-08-04 Fuji Electric Co., Ltd. Manufacturing method of SiC Schottky diode
US5780996A (en) * 1995-06-23 1998-07-14 Nippondenso Co., Ltd. Alternating current generator and schottky barrier diode

Cited By (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6673662B2 (en) 2000-11-28 2004-01-06 Cree, Inc. Epitaxial edge termination for silicon carbide Schottky devices and methods of fabricating silicon carbide devices incorporating same
US6573128B1 (en) * 2000-11-28 2003-06-03 Cree, Inc. Epitaxial edge termination for silicon carbide Schottky devices and methods of fabricating silicon carbide devices incorporating same
US20030222272A1 (en) * 2002-05-30 2003-12-04 Hamerski Roman J. Semiconductor devices using minority carrier controlling substances
US7419877B2 (en) 2003-01-15 2008-09-02 Cree, Inc. Methods of fabricating silicon carbide devices including multiple floating guard ring edge termination
US20040135153A1 (en) * 2003-01-15 2004-07-15 Sei-Hyung Ryu Multiple floating guard ring edge termination for silicon carbide devices and methods of fabricating silicon carbide devices incorporating same
US7842549B2 (en) 2003-01-15 2010-11-30 Cree, Inc. Methods of fabricating silicon carbide devices incorporating multiple floating guard ring edge terminations
US7026650B2 (en) 2003-01-15 2006-04-11 Cree, Inc. Multiple floating guard ring edge termination for silicon carbide devices
US20090035926A1 (en) * 2003-01-15 2009-02-05 Sei-Hyung Ryu Methods of Fabricating Silicon Carbide Devices Incorporating Multiple Floating Guard Ring Edge Terminations
US9515135B2 (en) 2003-01-15 2016-12-06 Cree, Inc. Edge termination structures for silicon carbide devices
US20110081772A1 (en) * 2003-01-15 2011-04-07 Sei Hyung Ryu Methods of fabricating silicon carbide devices incorporating multiple floating guard ring edge terminations
US8124480B2 (en) 2003-01-15 2012-02-28 Cree, Inc. Methods of fabricating silicon carbide devices incorporating multiple floating guard ring edge terminations
US20060006394A1 (en) * 2004-05-28 2006-01-12 Caracal, Inc. Silicon carbide Schottky diodes and fabrication method
US9412880B2 (en) 2004-10-21 2016-08-09 Vishay-Siliconix Schottky diode with improved surge capability
US20080286968A1 (en) * 2004-10-21 2008-11-20 Siliconix Technology C.V. Solderable top metal for silicon carbide semiconductor devices
US9496421B2 (en) 2004-10-21 2016-11-15 Siliconix Technology C.V. Solderable top metal for silicon carbide semiconductor devices
US20060175633A1 (en) * 2005-02-02 2006-08-10 Kinzer Daniel M III-nitride integrated schottky and power device
US7498617B2 (en) * 2005-02-02 2009-03-03 International Rectifier Corporation III-nitride integrated schottky and power device
US9472403B2 (en) 2005-03-04 2016-10-18 Siliconix Technology C.V. Power semiconductor switch with plurality of trenches
US7834376B2 (en) 2005-03-04 2010-11-16 Siliconix Technology C. V. Power semiconductor switch
US9419092B2 (en) 2005-03-04 2016-08-16 Vishay-Siliconix Termination for SiC trench devices
US20060214242A1 (en) * 2005-03-04 2006-09-28 International Rectifier Corporation Termination for SiC trench devices
US20060197105A1 (en) * 2005-03-04 2006-09-07 Rossano Carta Power semiconductor switch
US8901699B2 (en) 2005-05-11 2014-12-02 Cree, Inc. Silicon carbide junction barrier Schottky diodes with suppressed minority carrier injection
US7768092B2 (en) * 2005-07-20 2010-08-03 Cree Sweden Ab Semiconductor device comprising a junction having a plurality of rings
US20070018171A1 (en) * 2005-07-20 2007-01-25 Christopher Harris Semiconductor device and a method for production thereof
US9627553B2 (en) 2005-10-20 2017-04-18 Siliconix Technology C.V. Silicon carbide schottky diode
US8368165B2 (en) 2005-10-20 2013-02-05 Siliconix Technology C. V. Silicon carbide Schottky diode
US20070090481A1 (en) * 2005-10-20 2007-04-26 International Rectifier Corporation Silicon carbide schottky diode
US9627552B2 (en) 2006-07-31 2017-04-18 Vishay-Siliconix Molybdenum barrier metal for SiC Schottky diode and process of manufacture
US20080237608A1 (en) * 2006-07-31 2008-10-02 Giovanni Richieri Molybdenum barrier metal for SiC Schottky diode and process of manufacture
US8174051B2 (en) * 2007-06-26 2012-05-08 International Rectifier Corporation III-nitride power device
US20090001424A1 (en) * 2007-06-26 2009-01-01 Jianjun Cao III-nitride power device
TWI618240B (zh) * 2015-11-27 2018-03-11 世界先進積體電路股份有限公司 半導體裝置
US9607944B1 (en) 2016-01-26 2017-03-28 Vanguard International Semiconductor Corporation Efficient layout placement of a diode
US20180301338A1 (en) * 2017-04-12 2018-10-18 Infineon Technologies Ag Semiconductor Device with Metallization Structure and Method for Manufacturing Thereof
US11348789B2 (en) 2017-04-12 2022-05-31 Infineon Technologies Ag Method for manufacturing semiconductor device with metallization structure
US11302781B2 (en) 2017-04-13 2022-04-12 Infineon Technologies Ag Semiconductor device having an electrostatic discharge protection structure

Also Published As

Publication number Publication date
JP2002535839A (ja) 2002-10-22
EP1064684A1 (fr) 2001-01-03
WO2000042661A1 (fr) 2000-07-20

Similar Documents

Publication Publication Date Title
US6320205B1 (en) Edge termination for a semiconductor component, a schottky diode having an edge termination, and a method for producing the schottky diode
US20200194428A1 (en) Method of Manufacturing a Semiconductor Device
US9064779B2 (en) Semiconductor rectifier
EP0965146B1 (fr) TERMINAISON DE JONCTION POUR DIODE SCHOTTKY SiC
JP6425659B2 (ja) ショットキーダイオード及びショットキーダイオードの製造方法
US8952481B2 (en) Super surge diodes
EP3425676B1 (fr) Dispositif mosfet de carbure de silicium ayant une diode intégrée et son procédé de fabrication
US7105875B2 (en) Lateral power diodes
WO2013179728A1 (fr) Dispositif à semi-conducteur de carbure de silicium et procédé de production d'un dispositif à semi-conducteur de carbure de silicium
JP2002203967A (ja) 半導体素子
US8304783B2 (en) Schottky diodes including polysilicon having low barrier heights and methods of fabricating the same
US5705830A (en) Static induction transistors
US11869969B2 (en) Semiconductor device and method for manufacturing the same
CN113421927B (zh) 一种逆导SiC MOSFET器件及其制造方法
CN112786680A (zh) 一种碳化硅mosfet器件的元胞结构及功率半导体器件
CN212365972U (zh) 融合pn肖特基二极管
US20210036165A1 (en) MERGED PiN SCHOTTKY (MPS) DIODE WITH ENHANCED SURGE CURRENT CAPACITY
JP3327571B2 (ja) 半導体装置
US9960247B2 (en) Schottky barrier structure for silicon carbide (SiC) power devices
JP4383250B2 (ja) ショットキバリアダイオード及びその製造方法
US11955543B2 (en) Semiconductor device
EP4156280A1 (fr) Dispositif à semiconducteurs
CN113130665A (zh) 一种碳化硅肖特基二极管芯片的元胞结构及半导体芯片
KR20230133790A (ko) 반도체 스위칭 디바이스

Legal Events

Date Code Title Description
AS Assignment

Owner name: INFINEON TECHNOLOGIES AG, GERMANY

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:PFIRSCH, FRANK;RUPP, ROLAND;REEL/FRAME:012249/0635;SIGNING DATES FROM 20001025 TO 20001027

STCF Information on status: patent grant

Free format text: PATENTED CASE

FPAY Fee payment

Year of fee payment: 4

FPAY Fee payment

Year of fee payment: 8

FPAY Fee payment

Year of fee payment: 12