JP5924313B2 - ダイオード - Google Patents
ダイオード Download PDFInfo
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- JP5924313B2 JP5924313B2 JP2013160707A JP2013160707A JP5924313B2 JP 5924313 B2 JP5924313 B2 JP 5924313B2 JP 2013160707 A JP2013160707 A JP 2013160707A JP 2013160707 A JP2013160707 A JP 2013160707A JP 5924313 B2 JP5924313 B2 JP 5924313B2
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- diode
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- diode element
- insulating substrate
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- 239000000758 substrate Substances 0.000 claims description 53
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 27
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 22
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 19
- 238000002485 combustion reaction Methods 0.000 claims description 5
- 239000010409 thin film Substances 0.000 claims description 4
- 238000010292 electrical insulation Methods 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 description 31
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 17
- 230000015556 catabolic process Effects 0.000 description 15
- 239000010408 film Substances 0.000 description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 229910052594 sapphire Inorganic materials 0.000 description 13
- 239000010980 sapphire Substances 0.000 description 13
- 229910052710 silicon Inorganic materials 0.000 description 13
- 239000010703 silicon Substances 0.000 description 13
- 229910010271 silicon carbide Inorganic materials 0.000 description 11
- 239000012535 impurity Substances 0.000 description 10
- 238000005229 chemical vapour deposition Methods 0.000 description 8
- 239000010410 layer Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 235000012239 silicon dioxide Nutrition 0.000 description 6
- 238000005468 ion implantation Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 239000011247 coating layer Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/0455—Making n or p doped regions or layers, e.g. using diffusion
- H01L21/046—Making n or p doped regions or layers, e.g. using diffusion using ion implantation
- H01L21/0465—Making n or p doped regions or layers, e.g. using diffusion using ion implantation using masks
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Description
図1に示すように、本実施形態にかかるダイオードD1は、内燃機関に搭載された点火システムに適用されている。この点火システムは、一次コイル11および二次コイル12を有する点火コイル10と、一次コイル11への通電オンオフを制御するイグナイタ13と、二次コイル12に接続された点火プラグ20と、を備える。図1の例では、点火コイル10にイグナイタ13を内蔵させている。
上記第1実施形態では、1つの半導体チップ30(つまり1つのダイオード素子32)をモールドしてダイオードD1を形成しているが、図7に示す本実施形態では、複数の半導体チップ30を一体にするようモールドしてダイオードD2を形成している。
上記第2実施形態では、N型およびP型領域32a、32c、32b、32dが所定方向(図7の上下方向)に1列に並んだ状態の複数の半導体チップ30を、所定方向と垂直な方向(図7の左右方向)に並べてワイヤボンディングすることで、N型およびP型領域32a、32c、32b、32dが蛇行するように配置している。これに対し、図8に示す本実施形態では、N型およびP型領域32a、32c、32b、32dが直列にPN接合を形成することで1列になった状態の半導体チップ30を、蛇行するように形成してリードフレーム30d上に配置している。なお、図8の例では、複数本の半導体チップ30を並列に配置するとともに、電気的にも並列接続している。
上記第2実施形態では、各半導体チップ30の電極34をワイヤWで直接電気接続しているが、図9に示す本実施形態では、複数の半導体チップ30の電極34をリードフレーム30dに接続することで、リードフレーム30dを介して半導体チップ30を直列に接続している。図9の例では、第1のダイオード素子および第2のダイオード素子の2つをダイオードD4は備える。なお、第1のダイオード素子30の一端と電気接続されたプラス端子がリード端子30bに相当し、第2のダイオード素子の一端と電気接続されたマイナス端子がリード端子30cに相当する。なお、第1のダイオード素子30の他端と第2のダイオード素子の他端とが、リードフレーム30dおよびワイヤWを介して接続されている。
上記第4実施形態では、第1および第2のダイオード素子32の両方を、リードフレーム30dの一方の面(表面)に搭載しているが、図10に示す本実施形態では、第1のダイオード素子32をリードフレーム30dの表面に搭載し、第2のダイオード素子32をリードフレーム30dの裏面に搭載している。これによれば、リードフレーム30dの幅方向(図9および図10の左右方向)において、ダイオードD5を小型化できる。
本実施形態では、図2に示すダイオードD1を点火プラグ20上に搭載されるコイル、いわゆるプラグトップコイル(以下、PTC10Sと記載)に内蔵させている(図11参照)。
本実施形態では、図7〜図10に記載のダイオードD2〜D5をPTC10Sに内蔵させている(図12参照)。
ここで、点火プラグ20の放電電圧が高すぎると、点火プラグ20の電極消耗を抑制する点で望ましくない。一方、放電電圧が低すぎると、点火プラグ20での安定した放電を維持させる点で望ましくない。これらの点を鑑みると、点火プラグ20の放電電圧は、−30℃〜120℃の使用温度範囲において32〜38kV(より好ましくは33〜37kV)であることが望ましい。
上記第1実施形態では、N型およびP型領域を多結晶シリコン中に形成している。これに対し、本実施形態では、N型およびP型領域を単結晶シリコン中に形成している。なお、複数のダイオードが各々逆向きに直列接続された等価回路になるように形成する点では、上記各実施形態と本実施形態とは同じ構成である。
上記第9実施形態では、サファイアウェハ上に単結晶シリコンを形成しているが、本実施形態では、絶縁膜を内包した貼り合せウェハによるSOI(Silicon On Insulator)層中に単結晶シリコンを形成している。次に、このウェハ全体をフッ酸水溶液中に浸し、ダイオードの形成されたSOI層のみを剥離(リフトオフ)させる。これにより、薄膜状のダイオードウェハが形成される。次に、この薄膜状ダイオードウェハを石英ガラス基板に載せ、熱処理を施す。次に、表面に電極を形成し、石英ガラス基板上の単結晶シリコンからなるダイオード素子が完成する。このダイオード素子は、複数のダイオードが各々逆向きに直列接続された等価回路となっている。さらに、上記第1実施形態と同様にしてツェナーダイオードウェハをダイシングして1つ1つの半導体チップ30に切り取り、リード端子30b、30cの半田付け、トランスファーモールド等を実施して、ダイオードD1を完成させる。
上記各実施形態では、絶縁基板31上に多結晶シリコンまたは単結晶シリコンを形成し、そのシリコン中にN型領域32a、32cおよびP型領域32b、32dを形成している。これに対し本実施形態では、絶縁基板31上に多結晶シリコンカーバイドまたは単結晶シリコンカーバイドを形成し、そのシリコンカーバイド中にN型領域32a、32cおよびP型領域32b、32dを形成している。例えば、図2〜図4に示すダイオードD1において、N型領域32a、32cおよびP型領域32b、32dの形成に用いられるシリコンを、シリコンカーバイドに置き換えて、本実施形態に係るダイオードを製造する。
本発明は上記実施形態の記載内容に限定されず、以下のように変更して実施してもよい。また、各実施形態の特徴的構成をそれぞれ任意に組み合わせるようにしてもよい。
Claims (9)
- 複数のN型領域(32a、32c)および複数のP型領域(32b、32d)を有し、前記N型領域および前記P型領域が交互に直列にPN接合を形成したダイオード素子(32)と、
電気絶縁性を有する絶縁基板(31)と、
を備え、
前記N型領域および前記P型領域は、前記絶縁基板上に形成され、かつ、多結晶シリコンカーバイドまたは単結晶シリコンカーバイド中に形成され、
1組の前記N型領域および前記P型領域からなる単位ダイオードのツェナー電圧が、20V以上28V以下であることを特徴とするダイオード。 - 前記N型領域および前記P型領域を単結晶シリコンカーバイド中に形成することにより、前記ダイオード素子は薄膜状に形成され、
当該薄膜状のダイオード素子を前記絶縁基板に貼り付けて構成されていることを特徴とする請求項1に記載のダイオード。 - 前記P型領域および前記N型領域が直列にPN接合を形成することで1列になった状態の前記ダイオード素子を、蛇行するように配置したことを特徴とする請求項1または2に記載のダイオード。
- 前記ダイオード素子は、前記P型領域および前記N型領域が所定方向に1列に並ぶように形成されており、
複数の前記ダイオード素子を、ワイヤボンディングして直列に電気接続するとともに、前記P型領域および前記N型領域が蛇行するように配置したことを特徴とする請求項1または2に記載のダイオード。 - 前記ダイオード素子は、前記P型領域および前記N型領域が前記絶縁基板上で直線的に1列に並ぶように形成されていることを特徴とする請求項1または2に記載のダイオード。
- 前記ダイオード素子を複数備えるとともに、
前記複数のダイオード素子が前記絶縁基板を介して搭載されているリードフレームと、
前記複数のダイオード素子のうち第1のダイオード素子の一端と電気接続されたプラス端子と、
前記複数のダイオード素子のうち第2のダイオード素子の一端と電気接続されたマイナス端子と、
を備え、
前記第1のダイオード素子の他端と、前記第2のダイオード素子の他端とを、前記リードフレームを介して接続したことを特徴とする請求項1〜5のいずれか1つに記載のダイオード。 - 前記第1のダイオード素子は前記リードフレームの表面に搭載され、
前記第2のダイオード素子は前記リードフレームの裏面に搭載されていることを特徴とする請求項6に記載のダイオード。 - 前記ダイオード素子のツェナー電圧をVz、前記ダイオード素子の温度をT、その温度がゼロ℃の時の前記ツェナー電圧VzをV0とし、Vz=V0(1+KT)との式で表されるKをツェナー電圧温度係数Kとした場合において、
前記ツェナー電圧温度係数Kが、700ppm/℃以下であることを特徴とする請求項1〜7のいずれか1つに記載のダイオード。 - 内燃機関に搭載された点火コイルの二次側に接続され、ツェナー電圧を超えた電圧を点火プラグへ印加させないように機能する定電圧ダイオードとして適用されていることを特徴とする請求項1〜8のいずれか1つに記載のダイオード。
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