JP4808044B2 - 半導体バルク抵抗素子および半導体バルク抵抗素子を有するモジュール - Google Patents
半導体バルク抵抗素子および半導体バルク抵抗素子を有するモジュール Download PDFInfo
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- JP4808044B2 JP4808044B2 JP2006047964A JP2006047964A JP4808044B2 JP 4808044 B2 JP4808044 B2 JP 4808044B2 JP 2006047964 A JP2006047964 A JP 2006047964A JP 2006047964 A JP2006047964 A JP 2006047964A JP 4808044 B2 JP4808044 B2 JP 4808044B2
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- 239000012535 impurity Substances 0.000 claims description 58
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- 229910052698 phosphorus Inorganic materials 0.000 description 5
- 239000011574 phosphorus Substances 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000003513 alkali Substances 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 3
- 230000007935 neutral effect Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- KAPYVWKEUSXLKC-UHFFFAOYSA-N [Sb].[Au] Chemical compound [Sb].[Au] KAPYVWKEUSXLKC-UHFFFAOYSA-N 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
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Description
図1は、本発明の実施の形態1である半導体バルク抵抗素子が備える半導体チップ100であり、(a)は上面からみた一部破断平面図、(b)は(a)に示した半導体チップ100のA―A’線での断面図である。
すなわち、n++型半導体領域4をp+型半導体領域3より先に形成しておけば、各不純物の拡散係数の違いにより、熱処理時間に関わらず、n++型半導体領域4がp+型半導体領域3を確実に貫通するように形成させることができる。ところが、p+型半導体領域3をn++型半導体領域4より先に形成した場合、各不純物の拡散係数の違いに対応した一定の熱処理時間を経過しなければ、n++型半導体領域4がp+型半導体領域3を貫通するように形成させることができない。
図4は本発明の実施の形態2である半導体バルク抵抗素子が備える半導体チップ101であり、(a)は上面からみた一部破断平面図、(b)は(a)に示した半導体チップ100のB―B’線での断面図である。図4において、図1と同一の符号の説明は省略する。
図6は本発明の実施の形態3である半導体バルク抵抗素子が備える半導体チップ102、103、104、105を示す図であり、(a)は半導体チップ102、(b)は半導体チップ103、(c)は半導体チップ104、(d)は半導体チップ105を示す。図6において、図1と同一の符号の説明は省略する。なお、図6では本実施の形態3の半導体バルク抵抗素子の動作を説明するため、図2と同様にキャリアである電子の流れ21、22、23、24も図示する。以下、実施の形態3である半導体バルク抵抗素子の特徴を図6を参照して説明する。
図7は本発明の実施の形態4である半導体チップをモールド樹脂で封止した半導体バルク抵抗素子110の概観図を示す。図7において、100、101、102、103、104、105は実施の形態1〜3で説明した半導体チップであり、半導体チップの第2主面の第2電極6に半田12を介して第2リード電極11bに接続され、ワイヤボンディングによってワイヤ13が半導体チップの第1主面の第1電極7と第1リード電極11aと接続している。さらに、第1リード電極11a、第2リード電極11bの一部を除いて、全体をモールド樹脂14aで封止され、面実装型の半導体バルク抵抗素子110が完成する。
図8および図9は、本発明の実施の形態5であるダイオードモジュール200を示す。図8は図7で説明した面実装型の半導体バルク抵抗素子110以外に、図7と同様のパッケージを有するキャパシタ120、インダクタ140等の受動部品とダイオード130を、1つのダイオードモジュール200として組み込んだ例を示す。図9は図8に示したモジュールの一断面を示す。図8において、15はモジュールとして使用する場合のリード電極であり、このリード電極15は例えば図7で示した面実装型の半導体バルク抵抗素子110の第1リード電極11a,第2リード電極11bと半田12を介して接続されている。他の受動部品であるキャパシタ120及びインダクタ140、ダイオード130についても同様に、部品のリード電極とモジュールのリード電極15とを接続することによって、ダイオードモジュール200を完成させることができる。
2 n型半導体領域(第2半導体領域)
3 p+型半導体領域(第3半導体領域)
4 n++型半導体領域(第4半導体領域)
4a n++型半導体領域(第6半導体領域)
5 n++型半導体領域(第5半導体領域)
6 第2電極
7 第1電極
8 第1パッシベーション膜
8a,8b,8c 酸化膜
9 第2パッシベーション膜
10 凹部領域
11a 第1リード電極
11b 第2リード電極
12 半田
13 ワイヤ
14a,14b,14c モールド樹脂
15 リード電極
20、21、22 電子の流れ
100、101、102,103、104、105 半導体チップ
110 半導体バルク抵抗素子
120 キャパシタ
130 ダイオード
140 インダクタ
200 ダイオードモジュール
Claims (9)
- 互いに反対側に位置する第1主面及び第2主面を有する半導体チップを備え、
前記半導体チップは、
前記第2主面を持ち第1不純物濃度で第1導電型の第1半導体領域と、
前記第1半導体領域上に形成され、前記第1主面を持ち前記第1不純物濃度よりも低い第2不純物濃度で前記第1導電型の第2半導体領域と、
前記第2半導体領域の前記第1主面から前記第2主面に向かって選択的に形成され、前記第2不純物濃度よりも高い第3不純物濃度を有する第2導電型の第3半導体領域と、
前記第3半導体領域の前記第1主面から前記第2主面に向かって第3半導体領域を貫通して前記第2半導体領域と隣接するよう選択的に形成され、前記第2不純物濃度および前記第3不純物濃度よりも高い第4不純物濃度を有する第1導電型の第4半導体領域と、
前記第3半導体領域の前記第1主面から前記第2主面に向かって前記第3半導体領域と前記第4半導体領域とに隣接するよう選択的に形成され、前記第3不純物濃度より高く前記第4不純物濃度と同等もしくは高い第5不純物濃度を有する前記第1導電型の第5半導体領域と、
前記第1主面において前記第5半導体領域にオーミック接続された状態で形成された第1電極と、
前記第2主面において前記第1半導体領域にオーミック接続された状態で形成された第2電極とを有することを特徴とする半導体バルク抵抗素子。 - 請求項1記載の半導体バルク抵抗素子において、
前記第3半導体領域と前記第2半導体領域からなる第1接合面と第1主面との距離が、前記第4半導体領域と前記第2半導体領域からなる第2接合面と第1主面との距離より短いことを特徴とする半導体バルク抵抗素子。 - 請求項2に記載の半導体バルク抵抗素子において、
前記第1主面上の前記第2半導体領域と前記第5半導体領域の間に、前記第3半導体領域が存在することを特徴とする半導体バルク抵抗素子。 - 互いに反対側に位置する第1主面及び第2主面を有する半導体チップを備え、
前記半導体チップは、
前記第2主面を持ち第1不純物濃度で第1導電型の第1半導体領域と、
前記第1半導体領域上に形成され、前記第1主面を持ち前記第1不純物濃度よりも低い第2不純物濃度で前記第1導電型の第2半導体領域と、
前記第2半導体領域の前記第1主面から前記第2主面に向かって選択的に形成され、前記第2不純物濃度よりも高い第3不純物濃度を有する第2導電型の第3半導体領域と、
前記第3半導体領域の前記第1主面に設けられた凹部と、
前記凹部の内面を含み前記第3半導体領域の前記第1主面から前記第2主面に向かって前記第3半導体領域と前記第2半導体領域とに接するように選択的に形成され、前記第3不純物濃度および第2不純物濃度より高い前記第1導電型の第6不純物濃度を有する第6半導体領域と、
前記第1主面において前記第6半導体領域にオーミック接続された状態で形成された第1電極と、
前記第2主面において前記第1半導体領域にオーミック接続された状態で形成された第2電極とを有することを特徴とする半導体バルク抵抗素子。 - 請求項4記載の半導体バルク抵抗素子において、
前記第3半導体領域と前記第2半導体領域からなる第1接合面と第1主面との距離が、前記第6半導体領域と前記第2半導体領域からなる第2接合面と第1主面との距離より短いことを特徴とする半導体バルク抵抗素子。 - 請求項4に記載の半導体バルク抵抗素子において、
前記第1主面上の前記第2半導体領域と前記第6半導体領域の間に、前記第3半導体領域が存在することを特徴とする半導体バルク抵抗素子。 - 請求項1〜6のいずれか1項に記載の半導体バルク抵抗素子において、
第1電極は第1主面からみて前記半導体チップの中央部に位置していることを特徴とする半導体バルク抵抗素子。 - 互いに反対側に位置する第1主面及び第2主面を有する半導体チップを備え、
前記半導体チップは、
前記第2主面を持ち第1不純物濃度で第1導電型の第1半導体領域と、
前記第1半導体領域上に形成され、前記第1主面を持ち前記第1不純物濃度よりも低い第2不純物濃度で前記第1導電型の第2半導体領域と、
前記第2半導体領域の前記第1主面から前記第2主面に向かって選択的にかつ環状に形成された前記第2不純物濃度よりも高い第3不純物濃度を有する第2導電型の第3半導体領域と、
前記第3半導体領域の前記第1主面から前記第2主面に向かって前記第3半導体領域と前記第2半導体領域とに隣接するように選択的に形成され、前記第2不純物濃度および前記第3不純物濃度よりも高い第5不純物濃度を有する前記第1導電型の第5半導体領域と、
前記第1主面において前記第5半導体領域にオーミック接続された状態で形成された第1電極と、
前記第2主面において前記第1半導体領域にオーミック接続された状態で形成された第2電極とを有することを特徴とする半導体バルク抵抗素子。 - 請求項1〜8のいずれか1項に記載の半導体バルク抵抗素子と、
キャパシタ、インダクタ、およびダイオードの群から選ばれる一つ以上の受動部品と、
を、有することを特徴とするモジュール。
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JP2006047964A JP4808044B2 (ja) | 2006-02-24 | 2006-02-24 | 半導体バルク抵抗素子および半導体バルク抵抗素子を有するモジュール |
TW096100948A TW200742040A (en) | 2006-02-24 | 2007-01-10 | Semiconductor bulk resistor element |
KR20070005153A KR100911543B1 (ko) | 2006-02-24 | 2007-01-17 | 반도체 벌크 저항소자 |
US11/655,232 US20070200199A1 (en) | 2006-02-24 | 2007-01-19 | Semiconductor bulk resistance element |
CNB2007100039726A CN100541802C (zh) | 2006-02-24 | 2007-01-19 | 半导体体电阻元件 |
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JP2006047964A JP4808044B2 (ja) | 2006-02-24 | 2006-02-24 | 半導体バルク抵抗素子および半導体バルク抵抗素子を有するモジュール |
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US (1) | US20070200199A1 (ja) |
JP (1) | JP4808044B2 (ja) |
KR (1) | KR100911543B1 (ja) |
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TW (1) | TW200742040A (ja) |
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US11257942B2 (en) * | 2019-04-01 | 2022-02-22 | Nuvoton Technology Corporation Japan | Resistive element and power amplifier circuit |
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JP3169844B2 (ja) * | 1996-12-11 | 2001-05-28 | 日本電気株式会社 | 半導体装置 |
JP2000307064A (ja) * | 1999-04-21 | 2000-11-02 | Sansha Electric Mfg Co Ltd | 半導体抵抗 |
JP2002064106A (ja) * | 2000-06-05 | 2002-02-28 | Rohm Co Ltd | 半導体装置 |
JP4031640B2 (ja) * | 2001-12-13 | 2008-01-09 | ローム株式会社 | 半導体装置 |
JP2004214575A (ja) * | 2003-01-09 | 2004-07-29 | Matsushita Electric Ind Co Ltd | 半導体装置 |
JP2005158981A (ja) * | 2003-11-26 | 2005-06-16 | Renesas Technology Corp | 半導体装置及びその製造方法 |
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- 2007-01-19 CN CNB2007100039726A patent/CN100541802C/zh not_active Expired - Fee Related
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KR20070088336A (ko) | 2007-08-29 |
KR100911543B1 (ko) | 2009-08-10 |
JP2007227711A (ja) | 2007-09-06 |
US20070200199A1 (en) | 2007-08-30 |
CN100541802C (zh) | 2009-09-16 |
TW200742040A (en) | 2007-11-01 |
CN101026160A (zh) | 2007-08-29 |
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