CN102171826B - 分立半导体器件和形成密封沟槽结终端的方法 - Google Patents
分立半导体器件和形成密封沟槽结终端的方法 Download PDFInfo
- Publication number
- CN102171826B CN102171826B CN200980138445.3A CN200980138445A CN102171826B CN 102171826 B CN102171826 B CN 102171826B CN 200980138445 A CN200980138445 A CN 200980138445A CN 102171826 B CN102171826 B CN 102171826B
- Authority
- CN
- China
- Prior art keywords
- groove
- layer
- substrate
- semiconductor layer
- junction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 178
- 238000000034 method Methods 0.000 title claims description 49
- 239000000758 substrate Substances 0.000 claims abstract description 141
- 239000000463 material Substances 0.000 claims abstract description 20
- 230000005684 electric field Effects 0.000 claims abstract description 17
- 239000011810 insulating material Substances 0.000 claims abstract description 6
- 230000008021 deposition Effects 0.000 claims description 5
- 230000001052 transient effect Effects 0.000 abstract description 6
- 235000012431 wafers Nutrition 0.000 description 42
- 238000009413 insulation Methods 0.000 description 39
- 238000004519 manufacturing process Methods 0.000 description 38
- 238000005530 etching Methods 0.000 description 35
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 30
- 230000008569 process Effects 0.000 description 27
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 25
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 24
- 229910052751 metal Inorganic materials 0.000 description 24
- 239000002184 metal Substances 0.000 description 24
- 238000011049 filling Methods 0.000 description 22
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 22
- 229920005591 polysilicon Polymers 0.000 description 22
- 230000015556 catabolic process Effects 0.000 description 21
- 238000001259 photo etching Methods 0.000 description 19
- 238000005516 engineering process Methods 0.000 description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 17
- 229910052710 silicon Inorganic materials 0.000 description 17
- 239000010703 silicon Substances 0.000 description 17
- 239000007800 oxidant agent Substances 0.000 description 15
- 230000001590 oxidative effect Effects 0.000 description 15
- 229920002120 photoresistant polymer Polymers 0.000 description 15
- 229910052581 Si3N4 Inorganic materials 0.000 description 13
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 13
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 12
- 230000002441 reversible effect Effects 0.000 description 12
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 11
- 229910021419 crystalline silicon Inorganic materials 0.000 description 11
- 239000012777 electrically insulating material Substances 0.000 description 11
- 229910052760 oxygen Inorganic materials 0.000 description 11
- 239000001301 oxygen Substances 0.000 description 11
- 239000011435 rock Substances 0.000 description 11
- -1 SiON Chemical compound 0.000 description 10
- 238000009792 diffusion process Methods 0.000 description 10
- 230000006872 improvement Effects 0.000 description 9
- 238000002955 isolation Methods 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 8
- 238000007789 sealing Methods 0.000 description 7
- 230000005611 electricity Effects 0.000 description 6
- 238000013461 design Methods 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- 230000002500 effect on skin Effects 0.000 description 4
- 230000005284 excitation Effects 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 230000004044 response Effects 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 239000004411 aluminium Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052787 antimony Inorganic materials 0.000 description 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 230000002457 bidirectional effect Effects 0.000 description 2
- 230000002146 bilateral effect Effects 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0661—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66272—Silicon vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/732—Vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/732—Vertical transistors
- H01L29/7322—Vertical transistors having emitter-base and base-collector junctions leaving at the same surface of the body, e.g. planar transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/747—Bidirectional devices, e.g. triacs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thyristors (AREA)
- Element Separation (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (5)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/182,660 | 2008-07-30 | ||
US12/182,660 US8163624B2 (en) | 2008-07-30 | 2008-07-30 | Discrete semiconductor device and method of forming sealed trench junction termination |
US12/182660 | 2008-07-30 | ||
PCT/US2009/051650 WO2010014507A1 (en) | 2008-07-30 | 2009-07-24 | Discrete semiconductor device and method of forming sealed trench junction termination |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102171826A CN102171826A (zh) | 2011-08-31 |
CN102171826B true CN102171826B (zh) | 2015-04-29 |
Family
ID=41607465
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200980138445.3A Expired - Fee Related CN102171826B (zh) | 2008-07-30 | 2009-07-24 | 分立半导体器件和形成密封沟槽结终端的方法 |
Country Status (4)
Country | Link |
---|---|
US (2) | US8163624B2 (zh) |
EP (1) | EP2308092A4 (zh) |
CN (1) | CN102171826B (zh) |
WO (1) | WO2010014507A1 (zh) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102543720B (zh) * | 2010-12-07 | 2015-03-04 | 中国振华集团永光电子有限公司 | 一种硅双向瞬态电压抑制二极管及制作方法 |
CN102244079B (zh) * | 2011-07-28 | 2013-08-21 | 江苏捷捷微电子股份有限公司 | 台面工艺功率晶体管芯片结构和实施方法 |
CN102324382A (zh) * | 2011-10-20 | 2012-01-18 | 上海先进半导体制造股份有限公司 | 重掺杂p型衬底上生长高阻n型外延层的方法 |
CN103367393B (zh) * | 2012-03-28 | 2016-04-13 | 上海华虹宏力半导体制造有限公司 | 瞬态电压抑制器件及制造工艺方法 |
CN103681446B (zh) * | 2012-09-10 | 2016-06-08 | 中国科学院微电子研究所 | 一种浅沟槽隔离结构及其制造方法 |
TW201440118A (zh) * | 2013-04-11 | 2014-10-16 | Anpec Electronics Corp | 半導體功率元件的製作方法 |
US10386729B2 (en) | 2013-06-03 | 2019-08-20 | Kla-Tencor Corporation | Dynamic removal of correlation of highly correlated parameters for optical metrology |
US9742385B2 (en) | 2013-06-24 | 2017-08-22 | Ideal Power, Inc. | Bidirectional semiconductor switch with passive turnoff |
US9799731B2 (en) | 2013-06-24 | 2017-10-24 | Ideal Power, Inc. | Multi-level inverters using sequenced drive of double-base bidirectional bipolar transistors |
US8841174B1 (en) * | 2013-07-01 | 2014-09-23 | International Business Machines Corporation | Silicon controlled rectifier with integral deep trench capacitor |
WO2015089227A1 (en) * | 2013-12-11 | 2015-06-18 | Ideal Power Inc. | Systems and methods for bidirectional device fabrication |
US11637016B2 (en) | 2013-12-11 | 2023-04-25 | Ideal Power Inc. | Systems and methods for bidirectional device fabrication |
US9355853B2 (en) | 2013-12-11 | 2016-05-31 | Ideal Power Inc. | Systems and methods for bidirectional device fabrication |
CN103840013A (zh) * | 2014-01-26 | 2014-06-04 | 上海韦尔半导体股份有限公司 | 双向tvs二极管及其制造方法 |
US20160204714A1 (en) | 2014-11-06 | 2016-07-14 | Ideal Power Inc. | Variable-Voltage Self-Synchronizing Rectifier Circuits, Methods, and Systems |
CN106803515A (zh) * | 2015-11-26 | 2017-06-06 | 宁波达新半导体有限公司 | 半导体功率器件的终端结构及其制造方法 |
CN107452622A (zh) * | 2016-05-31 | 2017-12-08 | 北大方正集团有限公司 | 双向沟槽tvs二极管及制作方法 |
CN108133953B (zh) * | 2017-09-27 | 2021-01-01 | 华润微电子(重庆)有限公司 | 一种可控硅器件及其制备方法 |
CN109585530B (zh) * | 2017-09-28 | 2021-10-29 | 万国半导体(开曼)股份有限公司 | 高浪涌瞬变电压抑制器 |
CN110416152A (zh) * | 2019-07-26 | 2019-11-05 | 上海华虹宏力半导体制造有限公司 | 深槽隔离结构及工艺方法 |
CN110828562A (zh) * | 2019-11-29 | 2020-02-21 | 力特半导体(无锡)有限公司 | 晶闸管及其制造方法 |
TWI732426B (zh) * | 2020-01-17 | 2021-07-01 | 台灣茂矽電子股份有限公司 | 瞬態電壓抑制二極體結構及其製造方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5021355A (en) * | 1989-05-22 | 1991-06-04 | International Business Machines Corporation | Method of fabricating cross-point lightly-doped drain-source trench transistor |
US5395801A (en) * | 1993-09-29 | 1995-03-07 | Micron Semiconductor, Inc. | Chemical-mechanical polishing processes of planarizing insulating layers |
CN1561546A (zh) * | 2001-09-28 | 2005-01-05 | 伯纳斯有限公司 | 开关器件 |
CN1822390A (zh) * | 2005-02-15 | 2006-08-23 | 半导体元件工业有限责任公司 | 半导体器件边缘终端结构及方法 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2633324C2 (de) | 1976-07-24 | 1983-09-15 | SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg | Verfahren zum Herstellen von Halbleiterbauelementen hoher Sperrspannungsbelastbarkeit |
JPS5417682A (en) * | 1977-07-08 | 1979-02-09 | Mitsubishi Electric Corp | Semiconductor and its manufacture |
DE2739762C2 (de) * | 1977-09-03 | 1982-12-02 | SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg | Verfahren zur Passivierung von Halbleiterkörpern |
US4371423A (en) * | 1979-09-04 | 1983-02-01 | Vlsi Technology Research Association | Method of manufacturing semiconductor device utilizing a lift-off technique |
JPS56134765A (en) * | 1980-03-26 | 1981-10-21 | Nec Corp | Thyristor element |
US6236099B1 (en) * | 1996-04-22 | 2001-05-22 | International Rectifier Corp. | Trench MOS device and process for radhard device |
KR100270965B1 (ko) * | 1998-11-07 | 2000-12-01 | 윤종용 | 고속 바이폴라 트랜지스터 및 그 제조방법 |
JP4617527B2 (ja) * | 1999-04-08 | 2011-01-26 | 株式会社デンソー | 回路装置 |
US6262472B1 (en) * | 1999-05-17 | 2001-07-17 | National Semiconductor Corporation | Bipolar transistor compatible with CMOS utilizing tilted ion implanted base |
JP2002184952A (ja) * | 2000-12-15 | 2002-06-28 | Shindengen Electric Mfg Co Ltd | 半導体装置、半導体装置の製造方法 |
US6825510B2 (en) * | 2002-09-19 | 2004-11-30 | Fairchild Semiconductor Corporation | Termination structure incorporating insulator in a trench |
KR100606935B1 (ko) * | 2004-08-23 | 2006-08-01 | 동부일렉트로닉스 주식회사 | 반도체 소자의 제조방법 |
US7535057B2 (en) * | 2005-05-24 | 2009-05-19 | Robert Kuo-Chang Yang | DMOS transistor with a poly-filled deep trench for improved performance |
US7489488B2 (en) * | 2005-10-19 | 2009-02-10 | Littelfuse, Inc. | Integrated circuit providing overvoltage protection for low voltage lines |
US7767529B2 (en) * | 2007-04-20 | 2010-08-03 | Semiconductor Componenets Industries, LLC | Semiconductor component and method of manufacture |
-
2008
- 2008-07-30 US US12/182,660 patent/US8163624B2/en not_active Expired - Fee Related
-
2009
- 2009-07-24 EP EP09803414A patent/EP2308092A4/en not_active Withdrawn
- 2009-07-24 WO PCT/US2009/051650 patent/WO2010014507A1/en active Application Filing
- 2009-07-24 CN CN200980138445.3A patent/CN102171826B/zh not_active Expired - Fee Related
-
2012
- 2012-03-22 US US13/427,543 patent/US8766398B2/en not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5021355A (en) * | 1989-05-22 | 1991-06-04 | International Business Machines Corporation | Method of fabricating cross-point lightly-doped drain-source trench transistor |
US5395801A (en) * | 1993-09-29 | 1995-03-07 | Micron Semiconductor, Inc. | Chemical-mechanical polishing processes of planarizing insulating layers |
CN1561546A (zh) * | 2001-09-28 | 2005-01-05 | 伯纳斯有限公司 | 开关器件 |
CN1822390A (zh) * | 2005-02-15 | 2006-08-23 | 半导体元件工业有限责任公司 | 半导体器件边缘终端结构及方法 |
Also Published As
Publication number | Publication date |
---|---|
WO2010014507A1 (en) | 2010-02-04 |
US8766398B2 (en) | 2014-07-01 |
US8163624B2 (en) | 2012-04-24 |
EP2308092A4 (en) | 2013-02-20 |
US20100025807A1 (en) | 2010-02-04 |
EP2308092A1 (en) | 2011-04-13 |
US20120175729A1 (en) | 2012-07-12 |
CN102171826A (zh) | 2011-08-31 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN102171826B (zh) | 分立半导体器件和形成密封沟槽结终端的方法 | |
US10685955B2 (en) | Trench diode and method of forming the same | |
US20150123240A1 (en) | Semiconductor Device and Method of Forming Shallow P-N Junction with Sealed Trench Termination | |
EP0011443B1 (en) | Semiconductor integrated circuit device | |
US11417647B2 (en) | Semiconductor structure having a semiconducture substrate and an isolation component | |
KR20080073313A (ko) | 반도체 장치 및 그 제조 방법 | |
US8895399B2 (en) | Integrated circuit and method of forming sealed trench junction termination | |
CN111755503A (zh) | 一种可变横向掺杂的终端结构及其制作方法 | |
CN106169508B (zh) | 一种双向超低电容瞬态电压抑制器及其制作方法 | |
CN111370479A (zh) | 沟槽栅功率器件及其制造方法 | |
US11233045B2 (en) | Transient voltage suppression device and manufacturing method therefor | |
US9831327B2 (en) | Electrostatic discharge protection devices and methods of forming the same | |
JP3493681B2 (ja) | 埋込みアバランシュ・ダイオード | |
CN109346508B (zh) | 具有电流路径方向控制功能的半导体结构 | |
KR101779588B1 (ko) | 과도 전압 억제 소자 및 그 제조 방법 | |
CN109326592B (zh) | 瞬态电压抑制器及其制造方法 | |
JP4808044B2 (ja) | 半導体バルク抵抗素子および半導体バルク抵抗素子を有するモジュール | |
CN216563122U (zh) | 半导体器件 | |
US20220384430A1 (en) | Electrode structure, semiconductor structure, and manufacturing method of electrode structure | |
CN103178121A (zh) | Pin二极管及其制造方法 | |
US20240072113A1 (en) | Vertical semiconductor device and manufacturing method therefor | |
CN108922925B (zh) | 一种功率器件保护芯片及其制作方法 | |
CN116130481A (zh) | 可调节击穿电压的pn结结构及其制作方法 | |
CN114005817A (zh) | 半导体器件及其制备方法 | |
CN112071899A (zh) | 半导体结构及其制造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: CROCKETT ADDISON R. Free format text: FORMER OWNER: TRION TECHNOLOGY INC. Effective date: 20130221 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20130221 Address after: Arizona, USA Applicant after: ADDISON R. CROCKETT Address before: The United States Arizona Applicant before: Trion Technology Inc. |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150429 Termination date: 20160724 |