EP0478799B1 - Dispositif a semiconducteur avec materiau ferro-electrique et procede de production de ce dispositif - Google Patents
Dispositif a semiconducteur avec materiau ferro-electrique et procede de production de ce dispositif Download PDFInfo
- Publication number
- EP0478799B1 EP0478799B1 EP91908469A EP91908469A EP0478799B1 EP 0478799 B1 EP0478799 B1 EP 0478799B1 EP 91908469 A EP91908469 A EP 91908469A EP 91908469 A EP91908469 A EP 91908469A EP 0478799 B1 EP0478799 B1 EP 0478799B1
- Authority
- EP
- European Patent Office
- Prior art keywords
- film
- ferroelectric
- oxide film
- conductive
- capacitor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title claims description 43
- 238000000034 method Methods 0.000 title claims description 15
- 239000000463 material Substances 0.000 title claims description 9
- 239000003990 capacitor Substances 0.000 claims abstract description 56
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 28
- 239000001301 oxygen Substances 0.000 claims abstract description 28
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 24
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052751 metal Inorganic materials 0.000 claims description 56
- 239000002184 metal Substances 0.000 claims description 56
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 41
- 239000000758 substrate Substances 0.000 claims description 35
- 229910021332 silicide Inorganic materials 0.000 claims description 29
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 29
- 229910052702 rhenium Inorganic materials 0.000 claims description 13
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 11
- 229910052697 platinum Inorganic materials 0.000 claims description 11
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 claims description 9
- 239000010936 titanium Substances 0.000 claims description 8
- 229910052750 molybdenum Inorganic materials 0.000 claims description 7
- 229910052707 ruthenium Inorganic materials 0.000 claims description 7
- 229910052763 palladium Inorganic materials 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 claims description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 4
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 4
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 4
- 239000011733 molybdenum Substances 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- DYIZHKNUQPHNJY-UHFFFAOYSA-N oxorhenium Chemical compound [Re]=O DYIZHKNUQPHNJY-UHFFFAOYSA-N 0.000 claims description 3
- 229910003449 rhenium oxide Inorganic materials 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 229910000476 molybdenum oxide Inorganic materials 0.000 claims 2
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 claims 2
- 229910001925 ruthenium oxide Inorganic materials 0.000 claims 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 1
- 239000010937 tungsten Substances 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 abstract description 10
- 239000010703 silicon Substances 0.000 abstract description 10
- 230000003071 parasitic effect Effects 0.000 abstract description 8
- 238000007254 oxidation reaction Methods 0.000 abstract description 6
- 230000004888 barrier function Effects 0.000 abstract description 5
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Chemical compound O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 abstract description 5
- 230000003647 oxidation Effects 0.000 abstract description 5
- 230000010354 integration Effects 0.000 abstract description 3
- 229910019599 ReO2 Inorganic materials 0.000 abstract 1
- 231100000989 no adverse effect Toxicity 0.000 abstract 1
- 230000015654 memory Effects 0.000 description 19
- 238000009792 diffusion process Methods 0.000 description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 239000011229 interlayer Substances 0.000 description 11
- 238000004544 sputter deposition Methods 0.000 description 11
- 229910052814 silicon oxide Inorganic materials 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 230000009467 reduction Effects 0.000 description 9
- 239000010410 layer Substances 0.000 description 8
- 229910003781 PbTiO3 Inorganic materials 0.000 description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 229910052698 phosphorus Inorganic materials 0.000 description 6
- 239000011574 phosphorus Substances 0.000 description 6
- WXBOMIKEWRRKBB-UHFFFAOYSA-N rhenium(iv) oxide Chemical compound O=[Re]=O WXBOMIKEWRRKBB-UHFFFAOYSA-N 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 150000002926 oxygen Chemical class 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 229910020698 PbZrO3 Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 230000010287 polarization Effects 0.000 description 3
- 229910008484 TiSi Inorganic materials 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000009257 reactivity Effects 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000002407 reforming Methods 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/516—Insulating materials associated therewith with at least one ferroelectric layer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
Abstract
La structure d'un condensateur ferro-électrique (C) se forme sur une région source (23) entre une électrode de porte (22) et un film d'oxyde local (26). La structure présente une électrode supérieure (30) et une électrode inférieure (31) entre lesquelles un film ferro-électrique (29) est pris en sandwich, et comporte un film d'oxyde électroconducteur (32) entre l'électrode inférieure (31) et la région source (23). Le film d'oxyde électroconducteur (32) se compose de ITO, ReO2, RuO2, MoO3. Afin d'améliorer la cristallinité du film ferro-électrique (29), celui-ci est recuit à l'oxygène. Bien que l'oxygène pénètre par infiltration dans le film d'oxyde conducteur (32) jusqu'à un certain degré, cela n'entraîne aucun effet négatif, à l'exception d'une oxydation ultérieure du film d'oxyde conducteur (32). C'est-à-dire que le film d'oxyde sert de barrière à l'oxydation ou de couche borgne, pour que le silicium à l'interface avec la source soit essentiellement protégée contre l'oxydation. Ainsi, la diminution de la résistance de contact et le développement de capacitances parasites en série sont évités, ce qui accroît la liberté de formation de la région de condensateur (C) et augmente le degré d'intégration.
Claims (8)
- Condensateur ferro-électrique (C) à utiliser dans un dispositif à semiconducteur, ledit condensateur comprenant :un substrat semiconducteur (20) ;un film de siliciure métallique (40 ; 50 ; 60) disposé sur ledit substrat (20) ;un film métallique conducteur (41) disposé sur ledit film de siliciure métallique (40 ; 50 ; 60) ;un film d'oxyde conducteur (42 ; 52) disposé sur ledit film métallique conducteur (41) ;une électrode inférieure (31) disposée sur ledit film d'oxyde conducteur (42 ; 52), ladite électrode inférieure (31) étant constituée d'un matériau choisi dans le groupe constitué par le platine et le palladium ;une couche (29) de matériau ferro-électrique disposée sur ladite électrode inférieure (31) ; etune électrode supérieure (30) disposée sur ladite couche (29) de matériau ferro-électrique.
- Condensateur selon la revendication 1, dans lequel ledit film de siliciure métallique (40 ; 50 ; 60) contient un métal choisi dans le groupe comprenant le titane, le platine, le ruthénium, le rhénium, le molybdène, le tungstène, le tantale et le palladium.
- Condensateur selon la revendication 1, dans lequel ledit film métallique conducteur (41) contient un métal choisi dans le groupe comprenant le ruthénium, le rhénium et le molybdène.
- Condensateur selon la revendication 1, dans lequel ledit film d'oxyde conducteur (42 ; 52) contient un composé choisi dans le groupe comprenant l'oxyde de ruthénium, l'oxyde de rhénium, l'oxyde de molybdène et l'oxyde d'étain et d'indium.
- Condensateur selon la revendication 1, dans lequel ledit film d'oxyde conducteur (42 ; 52) contient plus de deux des composés choisis dans le groupe comprenant l'oxyde de ruthénium, l'oxyde de rhénium, l'oxyde de molybdène et l'oxyde d'étain et d'indium.
- Condensateur selon la revendication 1, dans lequel ledit film de siliciure métallique (40 ; 50 ; 60) est disposé sur une région source (23) dans ledit substrat (20).
- Procédé de fabrication d'un condensateur ferro-électrique (C) à utiliser dans un dispositif à semiconducteur, ledit procédé comprenant les opérations consistant à :fabriquer un substrat semiconducteur (20) ;disposer un film métallique conducteur (41) sur ledit substrat (20) ;former une électrode inférieure (31) sur ledit film métallique conducteur (41), ladite électrode inférieure (31) comprenant un matériau choisi dans le groupe constitué par le platine et le palladium ;disposer une couche (29) de matériau ferro-électrique sur ladite électrode inférieure (31) ;effectuer ensuite un recuit dans de l'oxygène, ledit recuit entraînant la formation par ledit film métallique conducteur d'un film de silicium métallique (40 ; 50 ; 60) entre ledit film métallique conducteur (41) et ledit substrat (20) et d'un film d'oxyde conducteur (42 ; 52) entre ledit film métallique conducteur (41) et ladite électrode inférieure (31) ; etdisposer une électrode supérieure (30) sur ladite couche (29) de matériau ferro-électrique.
- Procédé selon la revendication 7, dans lequel ledit film métallique conducteur (41) est disposé sur une région source (23) dans ledit substrat (20).
Applications Claiming Priority (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10801190 | 1990-04-24 | ||
| JP10801390 | 1990-04-24 | ||
| JP108011/90 | 1990-04-24 | ||
| JP108012/90 | 1990-04-24 | ||
| JP10801290 | 1990-04-24 | ||
| JP108013/90 | 1990-04-24 | ||
| PCT/JP1991/000539 WO1991016731A1 (fr) | 1990-04-24 | 1991-04-23 | Dispositif a semiconducteur avec materiau ferro-electrique et procede de production de ce dispositif |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| EP0478799A1 EP0478799A1 (fr) | 1992-04-08 |
| EP0478799A4 EP0478799A4 (en) | 1992-10-21 |
| EP0478799B1 true EP0478799B1 (fr) | 1996-12-04 |
Family
ID=27311120
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP91908469A Expired - Lifetime EP0478799B1 (fr) | 1990-04-24 | 1991-04-23 | Dispositif a semiconducteur avec materiau ferro-electrique et procede de production de ce dispositif |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US5293510A (fr) |
| EP (1) | EP0478799B1 (fr) |
| KR (1) | KR100349999B1 (fr) |
| DE (1) | DE69123422T2 (fr) |
| WO (1) | WO1991016731A1 (fr) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19649670C2 (de) * | 1995-11-30 | 2002-09-05 | Hyundai Electronics Ind | Verfahren zur Herstellung eines Kondensators einer Halbleitervorrichtung und auf diese Weise hergestellter Kondensator |
Families Citing this family (75)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04137662A (ja) * | 1990-09-28 | 1992-05-12 | Seiko Epson Corp | 半導体装置 |
| EP0516031A1 (fr) * | 1991-05-29 | 1992-12-02 | Ramtron International Corporation | Cellule de mémoire ferroélectrique empilée et procédé de fabrication |
| JPH0582801A (ja) * | 1991-09-20 | 1993-04-02 | Rohm Co Ltd | 半導体集積回路のキヤパシタおよびこれを用いた不揮発性メモリ |
| EP0540993A1 (fr) * | 1991-11-06 | 1993-05-12 | Ramtron International Corporation | Structure et fabrication d'un transistor à effet de champ de type MOS à haute transconductance en utilisant un empilement de couches couche tampon/ferroélectrique/couche tampon comme diélectrique de porte |
| US5406447A (en) * | 1992-01-06 | 1995-04-11 | Nec Corporation | Capacitor used in an integrated circuit and comprising opposing electrodes having barrier metal films in contact with a dielectric film |
| JP2788835B2 (ja) * | 1993-03-17 | 1998-08-20 | 日本電気株式会社 | 薄膜キャパシタおよびその製造方法 |
| US5392189A (en) * | 1993-04-02 | 1995-02-21 | Micron Semiconductor, Inc. | Capacitor compatible with high dielectric constant materials having two independent insulative layers and the method for forming same |
| US6791131B1 (en) * | 1993-04-02 | 2004-09-14 | Micron Technology, Inc. | Method for forming a storage cell capacitor compatible with high dielectric constant materials |
| US6030847A (en) * | 1993-04-02 | 2000-02-29 | Micron Technology, Inc. | Method for forming a storage cell capacitor compatible with high dielectric constant materials |
| US6531730B2 (en) | 1993-08-10 | 2003-03-11 | Micron Technology, Inc. | Capacitor compatible with high dielectric constant materials having a low contact resistance layer and the method for forming same |
| US5478772A (en) * | 1993-04-02 | 1995-12-26 | Micron Technology, Inc. | Method for forming a storage cell capacitor compatible with high dielectric constant materials |
| US5381302A (en) * | 1993-04-02 | 1995-01-10 | Micron Semiconductor, Inc. | Capacitor compatible with high dielectric constant materials having a low contact resistance layer and the method for forming same |
| US5407855A (en) * | 1993-06-07 | 1995-04-18 | Motorola, Inc. | Process for forming a semiconductor device having a reducing/oxidizing conductive material |
| US5933316A (en) * | 1993-08-02 | 1999-08-03 | Motorola Inc. | Method for forming a titanate thin film on silicon, and device formed thereby |
| US5383088A (en) * | 1993-08-09 | 1995-01-17 | International Business Machines Corporation | Storage capacitor with a conducting oxide electrode for metal-oxide dielectrics |
| JPH0793969A (ja) * | 1993-09-22 | 1995-04-07 | Olympus Optical Co Ltd | 強誘電体容量素子 |
| JP3505758B2 (ja) * | 1993-12-28 | 2004-03-15 | ローム株式会社 | 不揮発性半導体メモリ |
| US6052271A (en) * | 1994-01-13 | 2000-04-18 | Rohm Co., Ltd. | Ferroelectric capacitor including an iridium oxide layer in the lower electrode |
| US5508881A (en) * | 1994-02-01 | 1996-04-16 | Quality Microcircuits Corporation | Capacitors and interconnect lines for use with integrated circuits |
| JP3309260B2 (ja) * | 1994-02-14 | 2002-07-29 | 日本テキサス・インスツルメンツ株式会社 | キャパシタ |
| WO1996010845A2 (fr) * | 1994-10-04 | 1996-04-11 | Philips Electronics N.V. | Dispositif semiconducteur comprenant une memoire ferro-electrique dotee d'une electrode inferieure a barriere contre l'oxigene |
| WO1996015556A1 (fr) * | 1994-11-15 | 1996-05-23 | Radiant Technologies, Inc. | Condensateurs de circuits integres utilisant des materiaux ferroelectriques a faible point de curie |
| US6335552B1 (en) * | 1995-01-31 | 2002-01-01 | Fujitsu Limited | Semiconductor device and method for fabricating the same |
| US5668040A (en) * | 1995-03-20 | 1997-09-16 | Lg Semicon Co., Ltd. | Method for forming a semiconductor device electrode which also serves as a diffusion barrier |
| JP3113173B2 (ja) * | 1995-06-05 | 2000-11-27 | シャープ株式会社 | 不揮発性ランダムアクセスメモリ及びその製造方法 |
| US5739049A (en) * | 1995-08-21 | 1998-04-14 | Hyundai Electronics Industries Co., Ltd. | Method for fabricating semiconductor device having a capacitor and a method of forming metal wiring on a semiconductor substrate |
| US5793076A (en) * | 1995-09-21 | 1998-08-11 | Micron Technology, Inc. | Scalable high dielectric constant capacitor |
| US5801916A (en) * | 1995-11-13 | 1998-09-01 | Micron Technology, Inc. | Pre-patterned contact fill capacitor for dielectric etch protection |
| US5631804A (en) | 1995-11-13 | 1997-05-20 | Micron Technology, Inc. | Contact fill capacitor having a sidewall that connects the upper and lower surfaces of the dielectric and partially surrounds an insulating layer |
| KR100363068B1 (ko) * | 1995-12-26 | 2003-02-20 | 텔코디아 테크놀로지스, 인코포레이티드 | 실리콘에집적된강유전커패시터및그제조방법 |
| US5798903A (en) * | 1995-12-26 | 1998-08-25 | Bell Communications Research, Inc. | Electrode structure for ferroelectric capacitor integrated on silicon |
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- 1991-04-23 DE DE69123422T patent/DE69123422T2/de not_active Expired - Fee Related
- 1991-04-23 WO PCT/JP1991/000539 patent/WO1991016731A1/fr active IP Right Grant
- 1991-04-23 KR KR1019910701909A patent/KR100349999B1/ko not_active IP Right Cessation
- 1991-12-20 US US07/778,895 patent/US5293510A/en not_active Expired - Fee Related
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| DE19649670C2 (de) * | 1995-11-30 | 2002-09-05 | Hyundai Electronics Ind | Verfahren zur Herstellung eines Kondensators einer Halbleitervorrichtung und auf diese Weise hergestellter Kondensator |
Also Published As
| Publication number | Publication date |
|---|---|
| EP0478799A1 (fr) | 1992-04-08 |
| WO1991016731A1 (fr) | 1991-10-31 |
| KR100349999B1 (ko) | 2002-12-11 |
| DE69123422T2 (de) | 1997-06-05 |
| KR920702797A (ko) | 1992-10-06 |
| EP0478799A4 (en) | 1992-10-21 |
| US5293510A (en) | 1994-03-08 |
| DE69123422D1 (de) | 1997-01-16 |
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