EA199800002A1 - Удаление материала поляризованным излучением и приложением излучения с обратной стороны - Google Patents

Удаление материала поляризованным излучением и приложением излучения с обратной стороны

Info

Publication number
EA199800002A1
EA199800002A1 EA199800002A EA199800002A EA199800002A1 EA 199800002 A1 EA199800002 A1 EA 199800002A1 EA 199800002 A EA199800002 A EA 199800002A EA 199800002 A EA199800002 A EA 199800002A EA 199800002 A1 EA199800002 A1 EA 199800002A1
Authority
EA
Eurasian Patent Office
Prior art keywords
radiation
removal
app
backward
substrate
Prior art date
Application number
EA199800002A
Other languages
English (en)
Inventor
Одри С. Энгелсберг
Эндрю В. Джонсон
Вилльям А. Паркер
Original Assignee
Колдрон Лимитед Партнершип
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Колдрон Лимитед Партнершип filed Critical Колдрон Лимитед Партнершип
Publication of EA199800002A1 publication Critical patent/EA199800002A1/ru

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70566—Polarisation control
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • B08B7/0042—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like by laser
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
    • G03F7/704—Scanned exposure beam, e.g. raster-, rotary- and vector scanning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/32051—Deposition of metallic or metal-silicide layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76819—Smoothing of the dielectric

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Manufacturing & Machinery (AREA)
  • Optics & Photonics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Atmospheric Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Toxicology (AREA)
  • Plasma & Fusion (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Electromagnetism (AREA)
  • Cleaning In General (AREA)
  • Drying Of Semiconductors (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)
  • Laser Beam Processing (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Materials For Medical Uses (AREA)
  • ing And Chemical Polishing (AREA)
  • Polarising Elements (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Vessels, Lead-In Wires, Accessory Apparatuses For Cathode-Ray Tubes (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

Устройство и способ селективного удаления нежелательного материала с поверхности подложки обеспечивает протекание инертного газа над поверхностью подложки нежелательного материала при облучении этого нежелательного материала энергетическими фотонами. Изобретение позволяет удалять нежелательный материал без изменения физических свойств материала, лежащего ниже или рядом с удаляемым нежелательным материалом. Эффективность удаления может быть повышена за счёт применения поляризованных энергетических фотонов. Направление лазерного пучка на обратную сторону прозрачной подложки может увеличить эффективность удаления.Международная заявка была опубликована вместе с отчетом о международном поиске.
EA199800002A 1995-06-07 1996-06-05 Удаление материала поляризованным излучением и приложением излучения с обратной стороны EA199800002A1 (ru)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US47276295A 1995-06-07 1995-06-07
PCT/US1996/009331 WO1996041370A1 (en) 1995-06-07 1996-06-05 Removal of material by polarized radiation and back side application of radiation

Publications (1)

Publication Number Publication Date
EA199800002A1 true EA199800002A1 (ru) 1998-08-27

Family

ID=23876840

Family Applications (1)

Application Number Title Priority Date Filing Date
EA199800002A EA199800002A1 (ru) 1995-06-07 1996-06-05 Удаление материала поляризованным излучением и приложением излучения с обратной стороны

Country Status (19)

Country Link
US (1) US5958268A (ru)
EP (1) EP0834191B1 (ru)
JP (1) JP4089833B2 (ru)
KR (1) KR19990022679A (ru)
CN (1) CN100390938C (ru)
AT (1) ATE211584T1 (ru)
AU (1) AU5989296A (ru)
BR (1) BR9609065A (ru)
CA (2) CA2570713A1 (ru)
CZ (1) CZ378297A3 (ru)
DE (1) DE69618641T2 (ru)
EA (1) EA199800002A1 (ru)
HU (1) HUP9802661A2 (ru)
LV (1) LV12080B (ru)
MX (1) MX9709688A (ru)
MY (1) MY121934A (ru)
NO (1) NO975637L (ru)
TW (1) TW284907B (ru)
WO (1) WO1996041370A1 (ru)

Families Citing this family (94)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6027960A (en) * 1995-10-25 2000-02-22 Semiconductor Energy Laboratory Co., Ltd. Laser annealing method and laser annealing device
JP3450651B2 (ja) * 1997-06-10 2003-09-29 キヤノン株式会社 研磨方法及びそれを用いた研磨装置
JPH11102867A (ja) 1997-07-16 1999-04-13 Sony Corp 半導体薄膜の形成方法およびプラスチック基板
EP1054726B1 (en) * 1998-02-11 2003-07-30 University of Houston, Office of Technology Transfer Apparatus for chemical and biochemical reactions using photo-generated reagents
US6356653B2 (en) * 1998-07-16 2002-03-12 International Business Machines Corporation Method and apparatus for combined particle location and removal
US6714300B1 (en) * 1998-09-28 2004-03-30 Therma-Wave, Inc. Optical inspection equipment for semiconductor wafers with precleaning
US7045015B2 (en) 1998-09-30 2006-05-16 Optomec Design Company Apparatuses and method for maskless mesoscale material deposition
US7294366B2 (en) * 1998-09-30 2007-11-13 Optomec Design Company Laser processing for heat-sensitive mesoscale deposition
US20040197493A1 (en) * 1998-09-30 2004-10-07 Optomec Design Company Apparatus, methods and precision spray processes for direct write and maskless mesoscale material deposition
US6636676B1 (en) * 1998-09-30 2003-10-21 Optomec Design Company Particle guidance system
US8110247B2 (en) 1998-09-30 2012-02-07 Optomec Design Company Laser processing for heat-sensitive mesoscale deposition of oxygen-sensitive materials
US7108894B2 (en) * 1998-09-30 2006-09-19 Optomec Design Company Direct Write™ System
US7938079B2 (en) 1998-09-30 2011-05-10 Optomec Design Company Annular aerosol jet deposition using an extended nozzle
US6121130A (en) * 1998-11-16 2000-09-19 Chartered Semiconductor Manufacturing Ltd. Laser curing of spin-on dielectric thin films
JP2000294530A (ja) * 1999-04-06 2000-10-20 Nec Corp 半導体基板の洗浄方法及びその洗浄装置
JP3172512B2 (ja) * 1999-09-02 2001-06-04 株式会社クボタ クリーニング装置
US6881687B1 (en) 1999-10-29 2005-04-19 Paul P. Castrucci Method for laser cleaning of a substrate surface using a solid sacrificial film
JP2001144003A (ja) 1999-11-16 2001-05-25 Canon Inc 露光装置およびデバイス製造方法
BE1013237A3 (fr) * 2000-01-20 2001-11-06 Wallonia Space Logistics En Ab Procede d'enlevement local d'un revetement applique sur un substrat translucide ou transparent.
US6387602B1 (en) 2000-02-15 2002-05-14 Silicon Valley Group, Inc. Apparatus and method of cleaning reticles for use in a lithography tool
US6582857B1 (en) 2000-03-16 2003-06-24 International Business Machines Corporation Repair of masks to promote adhesion of patches
US6354213B1 (en) * 2000-04-03 2002-03-12 Jerome D. Jenkins Method and apparatus for cleaning a metering roll of a printing press
KR100326432B1 (ko) * 2000-05-29 2002-02-28 윤종용 웨이퍼 스테이지용 에어 샤워
US20020029956A1 (en) * 2000-07-24 2002-03-14 Allen Susan Davis Method and apparatus for removing minute particles from a surface
AU2001282862A1 (en) * 2000-07-24 2002-02-05 Florida State University Research Foundation Method and apparatus for removing minute particles from a surface
US6805751B2 (en) 2000-07-24 2004-10-19 Alkansas State University Method and apparatus for removal of minute particles from a surface using thermophoresis to prevent particle redeposition
KR20010000308A (ko) * 2000-09-08 2001-01-05 조시대 황토를 이용한 건축용 보드
US7015422B2 (en) 2000-12-21 2006-03-21 Mattson Technology, Inc. System and process for heating semiconductor wafers by optimizing absorption of electromagnetic energy
US6924492B2 (en) * 2000-12-22 2005-08-02 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method, and device manufactured thereby
US6632163B2 (en) * 2001-03-27 2003-10-14 The C.W. Zumbiel Co. Laser-etching of paperboard carton blanks
KR100387488B1 (ko) * 2001-04-25 2003-06-18 현대자동차주식회사 레이저 클래딩 공법을 이용한 밸브 시트 제조방법
JP4854866B2 (ja) 2001-04-27 2012-01-18 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7087504B2 (en) * 2001-05-18 2006-08-08 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device by irradiating with a laser beam
US6635845B2 (en) * 2001-05-19 2003-10-21 Imt Co., Ltd. Dry surface cleaning apparatus using a laser
US20060138104A1 (en) * 2001-05-25 2006-06-29 Devore Paul W Fuel cell and liquid container sealant removal system
AU2003244399A1 (en) * 2002-02-01 2003-09-02 Samuel W. Bross Method and apparatus for cleaning with electromagnetic radiation
DE10219388A1 (de) * 2002-04-30 2003-11-20 Siemens Ag Verfahren zur Erzeugung einer Grabenstruktur in einem Polymer-Substrat
US7288466B2 (en) * 2002-05-14 2007-10-30 Kabushiki Kaisha Toshiba Processing method, manufacturing method of semiconductor device, and processing apparatus
US6667243B1 (en) * 2002-08-16 2003-12-23 Advanced Micro Devices, Inc. Etch damage repair with thermal annealing
KR100456727B1 (ko) * 2002-08-20 2004-11-10 백래현 점토블록 제조방법
US6747243B1 (en) 2002-12-24 2004-06-08 Novellus Systems, Inc. Spot cleaning of particles after inspection
US20040224508A1 (en) * 2003-05-06 2004-11-11 Applied Materials Israel Ltd Apparatus and method for cleaning a substrate using a homogenized and non-polarized radiation beam
US7294367B2 (en) * 2003-06-06 2007-11-13 The United States Of America As Represented By The Secretary Of The Navy Biological laser printing via indirect photon-biomaterial interactions
US7247986B2 (en) * 2003-06-10 2007-07-24 Samsung Sdi. Co., Ltd. Organic electro luminescent display and method for fabricating the same
US7153586B2 (en) * 2003-08-01 2006-12-26 Vapor Technologies, Inc. Article with scandium compound decorative coating
JP3797355B2 (ja) * 2003-10-22 2006-07-19 セイコーエプソン株式会社 圧電振動子の製造方法
DE102004006414B4 (de) * 2004-02-09 2008-08-21 Lpkf Laser & Elektronika D.O.O. Verfahren zum partiellen Lösen einer leitfähigen Schicht
US7655152B2 (en) * 2004-04-26 2010-02-02 Hewlett-Packard Development Company, L.P. Etching
JP4861609B2 (ja) * 2004-05-28 2012-01-25 株式会社レナテック 有機物質の除去方法および除去装置
US20050279453A1 (en) 2004-06-17 2005-12-22 Uvtech Systems, Inc. System and methods for surface cleaning
US20060280866A1 (en) * 2004-10-13 2006-12-14 Optomec Design Company Method and apparatus for mesoscale deposition of biological materials and biomaterials
US7820937B2 (en) * 2004-10-27 2010-10-26 Boston Scientific Scimed, Inc. Method of applying one or more electromagnetic beams to form a fusion bond on a workpiece such as a medical device
US7938341B2 (en) 2004-12-13 2011-05-10 Optomec Design Company Miniature aerosol jet and aerosol jet array
US7674671B2 (en) 2004-12-13 2010-03-09 Optomec Design Company Aerodynamic jetting of aerosolized fluids for fabrication of passive structures
US7255747B2 (en) 2004-12-22 2007-08-14 Sokudo Co., Ltd. Coat/develop module with independent stations
US7798764B2 (en) 2005-12-22 2010-09-21 Applied Materials, Inc. Substrate processing sequence in a cartesian robot cluster tool
US20070026205A1 (en) 2005-08-01 2007-02-01 Vapor Technologies Inc. Article having patterned decorative coating
JP4413831B2 (ja) * 2005-08-11 2010-02-10 株式会社日立ハイテクノロジーズ ウェハ表面検査装置及びウェハ表面検査方法
US7994021B2 (en) * 2006-07-28 2011-08-09 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
TWI412079B (zh) * 2006-07-28 2013-10-11 Semiconductor Energy Lab 製造顯示裝置的方法
US7943287B2 (en) * 2006-07-28 2011-05-17 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing display device
US20080029152A1 (en) * 2006-08-04 2008-02-07 Erel Milshtein Laser scribing apparatus, systems, and methods
US7879685B2 (en) * 2006-08-04 2011-02-01 Solyndra, Inc. System and method for creating electric isolation between layers comprising solar cells
US8563431B2 (en) * 2006-08-25 2013-10-22 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8148259B2 (en) 2006-08-30 2012-04-03 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US20080092806A1 (en) * 2006-10-19 2008-04-24 Applied Materials, Inc. Removing residues from substrate processing components
JP2008147314A (ja) * 2006-12-07 2008-06-26 Canon Inc 洗浄装置及び方法、洗浄装置を有する露光装置
KR100801708B1 (ko) * 2006-12-22 2008-02-11 삼성전자주식회사 웨이퍼 오염물질 분석장비 및 방법
US20080296258A1 (en) * 2007-02-08 2008-12-04 Elliott David J Plenum reactor system
TWI482662B (zh) 2007-08-30 2015-05-01 Optomec Inc 機械上一體式及緊密式耦合之列印頭以及噴霧源
TWI538737B (zh) 2007-08-31 2016-06-21 阿普托麥克股份有限公司 材料沉積總成
US8887658B2 (en) 2007-10-09 2014-11-18 Optomec, Inc. Multiple sheath multiple capillary aerosol jet
EP2313230A4 (en) 2008-07-09 2017-03-08 FEI Company Method and apparatus for laser machining
JP2010044030A (ja) * 2008-08-18 2010-02-25 Fujitsu Ltd レーザクリーニング装置およびレーザクリーニング方法
CN102233342A (zh) * 2010-04-28 2011-11-09 中国科学院微电子研究所 一种二氧化碳多功能清洗机
DE102010019406B4 (de) 2010-05-04 2012-06-21 Lpkf Laser & Electronics Ag Verfahren zum partiellen Lösen einer definierten Fläche einer leitfähigen Schicht
DE102010019407B4 (de) 2010-05-04 2013-06-27 Lpkf Laser & Electronics Ag Verfahren zum Einbringen elektrischer Isolierungen in Leiterplatten
DE102010028777B4 (de) * 2010-05-07 2013-12-05 Von Ardenne Anlagentechnik Gmbh Verfahren und Vorrichtung zur Entfernung einer Rückseitenbeschichtung auf einem Substrat
CA2810309C (en) * 2010-09-10 2018-07-10 Nisshinbo Chemical Inc. Fuel cell separator
US20130017762A1 (en) * 2011-07-15 2013-01-17 Infineon Technologies Ag Method and Apparatus for Determining a Measure of a Thickness of a Polishing Pad of a Polishing Machine
KR101622065B1 (ko) * 2012-03-28 2016-05-17 후지쯔 가부시끼가이샤 생체 인증 장치, 생체 인증 방법 및 기억 매체
US10907305B2 (en) * 2013-02-21 2021-02-02 REEP Technologies Ltd. System and method for reprinting on paper
TWI517935B (zh) * 2013-04-16 2016-01-21 國立台灣科技大學 氣體添加硏磨液的供應系統及其方法
CN203936519U (zh) * 2014-05-30 2014-11-12 宁德新能源科技有限公司 锂离子电池极片涂层清洗装置
KR102444204B1 (ko) 2015-02-10 2022-09-19 옵토멕 인코포레이티드 에어로졸의 비행 중 경화에 의해 3차원 구조를 제조하는 방법
KR101821239B1 (ko) * 2015-09-04 2018-01-24 주식회사 이오테크닉스 접착제 제거장치 및 방법
WO2017111616A1 (en) * 2015-12-23 2017-06-29 Massey University Liquid treatment method and apparatus
DE102016100157A1 (de) * 2016-01-05 2017-07-06 Thyssenkrupp Rasselstein Gmbh Verfahren zum Entfernen einer an der Oberfläche eines verzinnten Stahlblechs haftenden Beschichtung aus einem organischen Material
JP6382901B2 (ja) * 2016-09-29 2018-08-29 ファナック株式会社 レーザー加工システム
CN106391591B (zh) * 2016-11-29 2019-11-22 苏州热工研究院有限公司 激光工作头及激光清洗系统
US10632746B2 (en) 2017-11-13 2020-04-28 Optomec, Inc. Shuttering of aerosol streams
US10695804B2 (en) * 2018-01-25 2020-06-30 Applied Materials, Inc. Equipment cleaning apparatus and method
CN109807471B (zh) * 2019-02-01 2024-03-26 佛山科学技术学院 一种激光打标装置及方法
CN111644748B (zh) * 2020-06-24 2022-06-10 中国船舶重工集团公司第七二五研究所 一种快速光洁地去除镁合金微弧氧化膜层的方法

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US33777A (en) * 1861-11-26 Improved material for mattresses, cushions
DE2943107C2 (de) * 1979-10-25 1984-07-26 Robert 6600 Saarbrücken Langen Verfahren zum Entrosten
WO1983001400A1 (en) * 1981-10-22 1983-04-28 First Of Chelsea Corp Laser removal of materials from surfaces
USRE33777E (en) 1982-01-26 1991-12-24 Avco Corporation Laser removal of poor thermally-conductive materials
CA1198482A (en) * 1982-04-14 1985-12-24 Thaddeus A. Wojcik Laser decontamination method
US4784135A (en) * 1982-12-09 1988-11-15 International Business Machines Corporation Far ultraviolet surgical and dental procedures
DE3373055D1 (en) * 1982-12-09 1987-09-24 Ibm Ablative photodecomposition of organic biological material
US4752455A (en) * 1986-05-27 1988-06-21 Kms Fusion, Inc. Pulsed laser microfabrication
DE3721940A1 (de) * 1987-07-02 1989-01-12 Ibm Deutschland Entfernen von partikeln von oberflaechen fester koerper durch laserbeschuss
IL84255A (en) * 1987-10-23 1993-02-21 Galram Technology Ind Ltd Process for removal of post- baked photoresist layer
US4908493A (en) * 1988-05-31 1990-03-13 Midwest Research Institute Method and apparatus for optimizing the efficiency and quality of laser material processing
US5531857A (en) * 1988-07-08 1996-07-02 Cauldron Limited Partnership Removal of surface contaminants by irradiation from a high energy source
US5024968A (en) * 1988-07-08 1991-06-18 Engelsberg Audrey C Removal of surface contaminants by irradiation from a high-energy source
US5099557A (en) * 1988-07-08 1992-03-31 Engelsberg Audrey C Removal of surface contaminants by irradiation from a high-energy source
FR2641718B1 (fr) * 1989-01-17 1992-03-20 Ardt Procede de nettoyage de la surface de matieres solides et dispositif de mise en oeuvre de ce procede, utilisant un laser impulsionnel de puissance, a impulsions courtes, dont on focalise le faisceau sur la surface a nettoyer
US5151135A (en) * 1989-09-15 1992-09-29 Amoco Corporation Method for cleaning surfaces using UV lasers
US4987286A (en) * 1989-10-30 1991-01-22 University Of Iowa Research Foundation Method and apparatus for removing minute particles from a surface
US5023424A (en) * 1990-01-22 1991-06-11 Tencor Instruments Shock wave particle removal method and apparatus
TW207588B (ru) * 1990-09-19 1993-06-11 Hitachi Seisakusyo Kk
US5068750A (en) * 1990-10-22 1991-11-26 Hughes Aircraft Company Contaminant removal from telescope optical elements
FR2671430A1 (fr) * 1991-01-04 1992-07-10 Alsthom Cge Alcatel Procede de gravure d'un film, notamment en oxyde supraconducteur, et film en resultant.
JP2799080B2 (ja) * 1991-03-18 1998-09-17 株式会社日立製作所 レーザ加工方法とその装置並びに透過型液晶素子、配線パターン欠陥修正方法とその装置
JPH05166784A (ja) * 1991-12-13 1993-07-02 Hitachi Ltd 基板の洗浄方法
US5228206A (en) * 1992-01-15 1993-07-20 Submicron Systems, Inc. Cluster tool dry cleaning system
DE4241575A1 (de) * 1992-12-10 1994-06-16 Baldwin Gegenheimer Gmbh Verfahren und Vorrichtung zum kontaktfreien Entfernen von Schmutz von Gegenständen, insbesondere von Druckmaschinen-Zylindern
US5373140A (en) * 1993-03-16 1994-12-13 Vernay Laboratories, Inc. System for cleaning molding equipment using a laser
US5482561A (en) * 1993-06-11 1996-01-09 Hughes Aircraft Company Method for removing organic deposits from sand particles with laser beam
JP3355251B2 (ja) * 1993-11-02 2002-12-09 株式会社日立製作所 電子装置の製造方法

Also Published As

Publication number Publication date
CA2222502A1 (en) 1996-12-19
DE69618641D1 (de) 2002-02-28
NO975637D0 (no) 1997-12-04
CA2222502C (en) 2007-05-08
BR9609065A (pt) 1999-01-26
DE69618641T2 (de) 2002-08-14
LV12080B (en) 1998-10-20
EP0834191B1 (en) 2002-01-02
JPH11507298A (ja) 1999-06-29
CN1194057A (zh) 1998-09-23
AU5989296A (en) 1996-12-30
KR19990022679A (ko) 1999-03-25
ATE211584T1 (de) 2002-01-15
WO1996041370A1 (en) 1996-12-19
MX9709688A (es) 1998-11-30
US5958268A (en) 1999-09-28
JP4089833B2 (ja) 2008-05-28
LV12080A (lv) 1998-06-20
HUP9802661A2 (hu) 1999-03-29
NO975637L (no) 1998-01-28
MY121934A (en) 2006-03-31
CZ378297A3 (cs) 1998-06-17
CA2570713A1 (en) 1996-12-19
CN100390938C (zh) 2008-05-28
TW284907B (en) 1996-09-01
EP0834191A1 (en) 1998-04-08

Similar Documents

Publication Publication Date Title
EA199800002A1 (ru) Удаление материала поляризованным излучением и приложением излучения с обратной стороны
EA199900160A1 (ru) Удаление материала излучением, приложенным под наклонным углом
ES8406559A1 (es) Procedimiento y aparato para alterar las propiedades de un substrato metalico.
FI954837A (fi) Pintaepäpuhtauksien poistaminen sädettämällä
FR2442507A1 (fr) Irradiation au laser d'une pellicule en silicium polycristallin
FI971136A (fi) Materiaalin valinnainen poisto säteilyllä
ATE174724T1 (de) Verfahren zum herstellen hocheffizienter leuchtdioden
ES2041374T3 (es) Eliminacion de contaminantes superficiales mediante radiacion desde una fuente de alta energia.
DE69101123D1 (de) Halbleiterlaser zum Erzeugen sichtbaren Lichts.
KR920020528A (ko) 핵 시설의 오염 구역내의 레이저 작업방법 및 장치
IT8024480A0 (it) Procedimento e dispositivo per la saldatura ad arco di luce, in particolare per la saldatura ad arco sommercso.
DE69110918D1 (de) Elektronenstrahlbestrahlungsapparat.
JPS53114347A (en) Working method for semiconductor device
DE3381058D1 (de) Lichtstrahlablenker.
FR2667404B1 (fr) Dispositif generateur de plusieurs faisceaux de lumiere.
IT8083456A0 (it) Dispositivo e procedimento per lo sfruttamento dei raggi solari quale fonte energetica.
JPS5413732A (en) Light source device
TW229326B (en) Method of manufacturing semiconductor elements
Gavrilov et al. Specific characteristics of the effect of UV laser radiation on the survival of microorganisms
IT7927945A0 (it) Sorgente di corrente per la saldatura ad arco di luce.
JPS5388568A (en) Laser scribing apparatus
KR950025951A (ko) 레이저조사장치
BE865018A (fr) Dispositif d'irradiation de substance fluante, en particulier de boue d'epuration, par faisceaux d'electrons
DE58901414D1 (de) Kopiervorrichtung zum modifizieren (verzerren) von filmvorlagen.
RU2001124515A (ru) Способ подачи солнечной энергии на Землю в лазерных лучах