FI971136A - Materiaalin valinnainen poisto säteilyllä - Google Patents

Materiaalin valinnainen poisto säteilyllä Download PDF

Info

Publication number
FI971136A
FI971136A FI971136A FI971136A FI971136A FI 971136 A FI971136 A FI 971136A FI 971136 A FI971136 A FI 971136A FI 971136 A FI971136 A FI 971136A FI 971136 A FI971136 A FI 971136A
Authority
FI
Finland
Prior art keywords
undesired material
radiation removal
optional radiation
undesired
substrate
Prior art date
Application number
FI971136A
Other languages
English (en)
Swedish (sv)
Other versions
FI971136A0 (fi
Inventor
Audrey C Engelsberg
Donna F Bethell
Original Assignee
Cauldron Lp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cauldron Lp filed Critical Cauldron Lp
Publication of FI971136A0 publication Critical patent/FI971136A0/fi
Publication of FI971136A publication Critical patent/FI971136A/fi

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041Cleaning
    • H01L21/02043Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046Dry cleaning only
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • B08B7/0042Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like by laser
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • B08B7/0057Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like by ultraviolet radiation
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/14Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor
    • B23K26/142Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor for the removal of by-products
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/14Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor
    • B23K26/1435Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor involving specially adapted flow control means
    • B23K26/1436Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor involving specially adapted flow control means for pressure control
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/14Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor
    • B23K26/1435Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor involving specially adapted flow control means
    • B23K26/1437Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor involving specially adapted flow control means for flow rate control
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/14Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor
    • B23K26/1462Nozzles; Features related to nozzles
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36Removing material
    • B23K26/361Removing material for deburring or mechanical trimming
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70383Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
    • G03F7/704Scanned exposure beam, e.g. raster-, rotary- and vector scanning
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70925Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/32051Deposition of metallic or metal-silicide layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321After treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321After treatment
    • H01L21/32115Planarisation
    • H01L21/3212Planarisation by chemical mechanical polishing [CMP]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76819Smoothing of the dielectric

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mechanical Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Public Health (AREA)
  • Epidemiology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Toxicology (AREA)
  • Fluid Mechanics (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Medicines Containing Material From Animals Or Micro-Organisms (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Drying Of Semiconductors (AREA)
  • Laser Beam Processing (AREA)
  • Cleaning In General (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)
  • Solid-Sorbent Or Filter-Aiding Compositions (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
FI971136A 1994-09-19 1997-03-18 Materiaalin valinnainen poisto säteilyllä FI971136A (fi)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/306,431 US5643472A (en) 1988-07-08 1994-09-19 Selective removal of material by irradiation
PCT/US1995/011993 WO1996009128A1 (en) 1994-09-19 1995-09-15 Selective removal of material by irradiation

Publications (2)

Publication Number Publication Date
FI971136A0 FI971136A0 (fi) 1997-03-18
FI971136A true FI971136A (fi) 1997-05-14

Family

ID=23185252

Family Applications (1)

Application Number Title Priority Date Filing Date
FI971136A FI971136A (fi) 1994-09-19 1997-03-18 Materiaalin valinnainen poisto säteilyllä

Country Status (21)

Country Link
US (1) US5643472A (fi)
EP (1) EP0782483B1 (fi)
JP (1) JP3267977B2 (fi)
KR (1) KR100265583B1 (fi)
CN (1) CN1096313C (fi)
AT (1) ATE194515T1 (fi)
AU (1) AU698923B2 (fi)
BR (1) BR9508965A (fi)
CA (1) CA2200199A1 (fi)
CZ (1) CZ78897A3 (fi)
DE (1) DE69517988T2 (fi)
FI (1) FI971136A (fi)
HK (1) HK1004944A1 (fi)
HU (1) HUT77466A (fi)
LV (1) LV11855B (fi)
MX (1) MX9702097A (fi)
MY (1) MY112591A (fi)
NO (1) NO971090L (fi)
RU (1) RU2141879C1 (fi)
TW (1) TW259882B (fi)
WO (1) WO1996009128A1 (fi)

Families Citing this family (99)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6048588A (en) * 1988-07-08 2000-04-11 Cauldron Limited Partnership Method for enhancing chemisorption of material
DE19519150A1 (de) * 1995-05-30 1996-12-12 Fraunhofer Ges Forschung Laserstrahlgerät und Verfahren zur Bearbeitung von Werkstücken
IL115933A0 (en) 1995-11-09 1996-01-31 Oramir Semiconductor Ltd Process and apparatus for oblique beam revolution for the effective laser stripping of sidewalls
IL115934A0 (en) * 1995-11-09 1996-01-31 Oramir Semiconductor Ltd Laser processing chamber with cassette cell
IL115931A0 (en) 1995-11-09 1996-01-31 Oramir Semiconductor Ltd Laser stripping improvement by modified gas composition
FR2743215B1 (fr) * 1995-12-27 1998-02-13 Electricite De France Procede et dispositif de restauration de l'etancheite d'organes de raccordement tels que des boites a eau d'alternateurs a refroidissement mixte eau-hydrogene
US5800625A (en) * 1996-07-26 1998-09-01 Cauldron Limited Partnership Removal of material by radiation applied at an oblique angle
US8066819B2 (en) 1996-12-19 2011-11-29 Best Label Co., Inc. Method of removing organic materials from substrates
US6500267B1 (en) * 1998-10-06 2002-12-31 Net Zero, Inc. Reduction of energy consumption in a cooling or heating system through UVC irradiation
US5858801A (en) * 1997-03-13 1999-01-12 The United States Of America As Represented By The Secretary Of The Navy Patterning antibodies on a surface
US6235541B1 (en) 1997-03-13 2001-05-22 The United States Of America As Represented By The Secretary Of The Navy Patterning antibodies on a surface
JPH117608A (ja) * 1997-04-25 1999-01-12 Fujitsu Ltd 磁気ヘッド及びその製造方法
US6066032A (en) * 1997-05-02 2000-05-23 Eco Snow Systems, Inc. Wafer cleaning using a laser and carbon dioxide snow
US5954974A (en) * 1997-09-25 1999-09-21 Lucent Technologies Inc. Laser-assisted coating removal from optical fibers
GB2330653B (en) * 1997-10-24 2002-05-08 British Aerospace Process and apparatus for monitoring surface laser cleaning
US6494217B2 (en) 1998-03-12 2002-12-17 Motorola, Inc. Laser cleaning process for semiconductor material and the like
US6113708A (en) * 1998-05-26 2000-09-05 Candescent Technologies Corporation Cleaning of flat-panel display
US6385290B1 (en) 1998-09-14 2002-05-07 Nikon Corporation X-ray apparatus
US6714300B1 (en) * 1998-09-28 2004-03-30 Therma-Wave, Inc. Optical inspection equipment for semiconductor wafers with precleaning
IL127720A0 (en) * 1998-12-24 1999-10-28 Oramir Semiconductor Ltd Local particle cleaning
US6217422B1 (en) * 1999-01-20 2001-04-17 International Business Machines Corporation Light energy cleaning of polishing pads
US6207553B1 (en) 1999-01-26 2001-03-27 Advanced Micro Devices, Inc. Method of forming multiple levels of patterned metallization
US6335208B1 (en) * 1999-05-10 2002-01-01 Intersil Americas Inc. Laser decapsulation method
WO2000072223A1 (en) * 1999-05-24 2000-11-30 Potomac Photonics, Inc. A pulse-position system for miniature structures
US6583381B1 (en) * 1999-05-24 2003-06-24 Potomac Photonics, Inc. Apparatus for fabrication of miniature structures
AU5266800A (en) * 1999-05-24 2000-12-12 Potomac Photonics, Inc. Patterned surface cleaning system of miniature structures
US6862490B1 (en) * 1999-05-24 2005-03-01 Potomac Photonics, Inc. DLL circuit taking acount of external load
US6358430B1 (en) 1999-07-28 2002-03-19 Motorola, Inc. Technique for etching oxides and/or insulators
US7073246B2 (en) * 1999-10-04 2006-07-11 Roche Diagnostics Operations, Inc. Method of making a biosensor
EP1093022B1 (en) * 1999-10-12 2006-03-08 ASML Netherlands B.V. Lithographic projection apparatus
US6881687B1 (en) 1999-10-29 2005-04-19 Paul P. Castrucci Method for laser cleaning of a substrate surface using a solid sacrificial film
JP2001144003A (ja) 1999-11-16 2001-05-25 Canon Inc 露光装置およびデバイス製造方法
US6419566B1 (en) 2000-02-11 2002-07-16 International Business Machines Corporation System for cleaning contamination from magnetic recording media rows
US6582857B1 (en) 2000-03-16 2003-06-24 International Business Machines Corporation Repair of masks to promote adhesion of patches
US6649861B2 (en) 2000-05-24 2003-11-18 Potomac Photonics, Inc. Method and apparatus for fabrication of miniature structures
FR2811084B1 (fr) * 2000-06-29 2002-10-25 Bioalliance Pharma Methode d'identification d'une caracteristique biologique fonctionnelle d'une matiere vivante
US20020029956A1 (en) * 2000-07-24 2002-03-14 Allen Susan Davis Method and apparatus for removing minute particles from a surface
US6805751B2 (en) * 2000-07-24 2004-10-19 Alkansas State University Method and apparatus for removal of minute particles from a surface using thermophoresis to prevent particle redeposition
AU2001282862A1 (en) * 2000-07-24 2002-02-05 Florida State University Research Foundation Method and apparatus for removing minute particles from a surface
US6676878B2 (en) * 2001-01-31 2004-01-13 Electro Scientific Industries, Inc. Laser segmented cutting
US6553661B2 (en) * 2001-01-04 2003-04-29 Texas Instruments Incorporated Semiconductor test structure having a laser defined current carrying structure
WO2002074480A1 (en) * 2001-03-16 2002-09-26 Laser Machining, Inc. Laser ablation technique
US6849859B2 (en) * 2001-03-21 2005-02-01 Euv Limited Liability Corporation Fabrication of precision optics using an imbedded reference surface
JP4854866B2 (ja) * 2001-04-27 2012-01-18 株式会社半導体エネルギー研究所 半導体装置の作製方法
US8496960B2 (en) * 2001-10-23 2013-07-30 Purdue Pharma L.P. Terazosin transdermal device and methods
US7253901B2 (en) * 2002-01-23 2007-08-07 Kla-Tencor Technologies Corporation Laser-based cleaning device for film analysis tool
AU2003244399A1 (en) * 2002-02-01 2003-09-02 Samuel W. Bross Method and apparatus for cleaning with electromagnetic radiation
SG112822A1 (en) * 2002-02-04 2005-07-28 Advanced Systems Automation Method and apparatus for selective removal of material
US20030155328A1 (en) * 2002-02-15 2003-08-21 Huth Mark C. Laser micromachining and methods and systems of same
US6821472B2 (en) * 2002-04-10 2004-11-23 Siemens Dematic Electronics Assembly Systems, Inc. Method of laser machining materials with minimal thermal loading
US7150811B2 (en) * 2002-11-26 2006-12-19 Pei Company Ion beam for target recovery
US6747243B1 (en) 2002-12-24 2004-06-08 Novellus Systems, Inc. Spot cleaning of particles after inspection
US6874510B2 (en) * 2003-02-07 2005-04-05 Lsi Logic Corporation Method to use a laser to perform the edge clean operation on a semiconductor wafer
US6921975B2 (en) * 2003-04-18 2005-07-26 Freescale Semiconductor, Inc. Circuit device with at least partial packaging, exposed active surface and a voltage reference plane
US7754999B2 (en) 2003-05-13 2010-07-13 Hewlett-Packard Development Company, L.P. Laser micromachining and methods of same
US6969822B2 (en) * 2003-05-13 2005-11-29 Hewlett-Packard Development Company, L.P. Laser micromachining systems
EP1507172A1 (en) * 2003-08-12 2005-02-16 ASML Netherlands B.V. Lithographic apparatus and apparatus adjustment method
US7025891B2 (en) * 2003-08-29 2006-04-11 International Business Machines Corporation Method of polishing C4 molybdenum masks to remove molybdenum peaks
WO2005038877A2 (en) * 2003-10-14 2005-04-28 Rudolph Technologies, Inc. MOLECULAR AIRBORNE CONTAMINANTS (MACs) REMOVAL AND WAFER SURFACE SUSTAINING SYSTEM AND METHOD
SG114754A1 (en) * 2004-02-25 2005-09-28 Kulicke & Soffa Investments Laser cleaning system for a wire bonding machine
US20060219754A1 (en) * 2005-03-31 2006-10-05 Horst Clauberg Bonding wire cleaning unit and method of wire bonding using same
US20070022623A1 (en) * 2005-07-29 2007-02-01 Board Of Regents Of University Of Nebraska Laser surface drying
US7867404B2 (en) * 2005-11-15 2011-01-11 Joel Allen Deutsch Method for converting electrical components
GB0615153D0 (en) 2006-07-31 2006-09-06 Rolls Royce Plc Laser cleaning of components
US7879685B2 (en) 2006-08-04 2011-02-01 Solyndra, Inc. System and method for creating electric isolation between layers comprising solar cells
US20080092806A1 (en) * 2006-10-19 2008-04-24 Applied Materials, Inc. Removing residues from substrate processing components
JP2008147314A (ja) * 2006-12-07 2008-06-26 Canon Inc 洗浄装置及び方法、洗浄装置を有する露光装置
JP2009093758A (ja) * 2007-10-10 2009-04-30 Shin Etsu Chem Co Ltd 磁気記録媒体用シリコン基板の製造方法および磁気記録媒体
WO2010006067A2 (en) 2008-07-09 2010-01-14 Fei Company Method and apparatus for laser machining
DE102009054060B4 (de) 2009-11-20 2014-10-16 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Vorrichtung und Verfahren zum Beschichten eines Substrates
US8197037B2 (en) 2009-12-15 2012-06-12 Xerox Corporation Method of removing thermoset polymer from piezoelectric transducers in a print head
WO2013059779A1 (en) * 2011-10-21 2013-04-25 American Laser Enterprises, Llc System configured for removing a coating from a substrate using electromagnetic radiation
US8842951B2 (en) 2012-03-02 2014-09-23 Analog Devices, Inc. Systems and methods for passive alignment of opto-electronic components
US9716193B2 (en) 2012-05-02 2017-07-25 Analog Devices, Inc. Integrated optical sensor module
RU2538161C2 (ru) * 2012-12-28 2015-01-10 федеральное государственное автономное образовательное учреждение высшего образования "Санкт-Петербургский национальный исследовательский университет информационных технологий, механики и оптики" Способ лазерной очистки поверхности
US10884551B2 (en) 2013-05-16 2021-01-05 Analog Devices, Inc. Integrated gesture sensor module
EP3049239B1 (en) 2013-09-26 2019-11-06 Compagnie Générale des Etablissements Michelin Correction of localized tire surface anomalies
JP2015119127A (ja) * 2013-12-20 2015-06-25 ウシオ電機株式会社 光照射装置
DE112015002860B4 (de) 2014-06-19 2024-07-25 Magna International Inc. Verfahren und Vorrichtung für laserunterstütztes Kraftreinigen
KR101594688B1 (ko) * 2014-08-28 2016-02-17 주식회사 포스코 레이저 폴리싱에 의한 전자소자용 금속기판의 표면처리방법
RU2593267C2 (ru) * 2014-09-03 2016-08-10 Открытое акционерное общество "Омский научно-исследовательский институт приборостроения" (ОАО "ОНИИП") Способ формирования топологии ltcc плат
CN104384720A (zh) * 2014-09-26 2015-03-04 东莞台一盈拓科技股份有限公司 一种快速去除压铸品毛刺的方法
US9590129B2 (en) 2014-11-19 2017-03-07 Analog Devices Global Optical sensor module
DE102015004603A1 (de) * 2015-04-09 2016-10-13 Siltectra Gmbh Kombiniertes Waferherstellungsverfahren mit Laserbehandlung und temperaturinduzierten Spannungen
KR101938794B1 (ko) * 2016-05-31 2019-04-10 고려대학교 세종산학협력단 금속 박막의 플라즈마 식각 장치 및 금속 박막의 플라즈마 식각 방법
JP6999264B2 (ja) * 2016-08-04 2022-01-18 株式会社日本製鋼所 レーザ剥離装置、レーザ剥離方法、及び有機elディスプレイの製造方法
JP6382901B2 (ja) 2016-09-29 2018-08-29 ファナック株式会社 レーザー加工システム
PL3398709T3 (pl) * 2017-05-03 2021-06-28 Agathon AG, Maschinenfabrik Układ do obróbki laserowej z koncepcją termiczną
CN109092801B (zh) * 2017-06-20 2022-03-18 蓝思科技(长沙)有限公司 一种蓝宝石晶片的清洗方法及其采用的设备
US10712197B2 (en) 2018-01-11 2020-07-14 Analog Devices Global Unlimited Company Optical sensor package
CN108672413A (zh) * 2018-08-01 2018-10-19 中山普宏光电科技有限公司 一种准分子激光智能清洗设备
CN109570148A (zh) * 2018-11-08 2019-04-05 中国科学院半导体研究所 直连空压机的激光清洗一体机
CN109483046A (zh) * 2019-01-16 2019-03-19 长沙中拓创新科技有限公司 一种超硬耐磨材料用激光研磨机及其工艺
CN109821823B (zh) * 2019-04-08 2021-11-02 哈尔滨工业大学 一种co2激光/纳秒脉冲激光复合清洗方法
US20210035767A1 (en) * 2019-07-29 2021-02-04 Applied Materials, Inc. Methods for repairing a recess of a chamber component
US11440062B2 (en) * 2019-11-07 2022-09-13 General Electric Company System and method for cleaning a tube
US20230143830A1 (en) 2020-02-28 2023-05-11 Katholieke Universiteit Leuven Method for selective phase removal in a nanocomposite
DE102020114477A1 (de) 2020-05-29 2021-12-02 Homag Bohrsysteme Gmbh Vorrichtung und Verfahren zur Bearbeitung, insbesondere zur Veredelung, von Oberflächen
CN114952013B (zh) * 2022-04-28 2024-06-18 维达力科技股份有限公司 3d玻璃盖板及其制备方法、电子产品

Family Cites Families (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2943107C2 (de) * 1979-10-25 1984-07-26 Robert 6600 Saarbrücken Langen Verfahren zum Entrosten
US4393311A (en) * 1980-06-13 1983-07-12 Bell Telephone Laboratories, Incorporated Method and apparatus for surface characterization and process control utilizing radiation from desorbed particles
JPS57130416A (en) * 1981-02-05 1982-08-12 Nec Corp Apparatus for processing projecting substance
WO1983001400A1 (en) * 1981-10-22 1983-04-28 First Of Chelsea Corp Laser removal of materials from surfaces
US4756765A (en) * 1982-01-26 1988-07-12 Avco Research Laboratory, Inc. Laser removal of poor thermally-conductive materials
CA1198482A (en) * 1982-04-14 1985-12-24 Thaddeus A. Wojcik Laser decontamination method
JPS59206195A (ja) * 1983-05-09 1984-11-21 Semiconductor Energy Lab Co Ltd レ−ザ加工方法
JPS60129136A (ja) * 1983-12-15 1985-07-10 Toshiba Corp 紫外線照射装置
US4508749A (en) * 1983-12-27 1985-04-02 International Business Machines Corporation Patterning of polyimide films with ultraviolet light
AU589353B2 (en) * 1984-02-17 1989-10-12 Robert Langen Procedure for removal of impurities, in particular rust, from the surface of a metal
JPS61147988A (ja) * 1984-12-19 1986-07-05 Toshiba Corp レ−ザ加工装置
JPS6286709A (ja) * 1985-10-11 1987-04-21 Mitsubishi Electric Corp 半導体装置の製造方法
EP0251280A3 (en) * 1986-06-30 1989-11-23 Nec Corporation Method of gettering semiconductor wafers with a laser beam
DE3721940A1 (de) * 1987-07-02 1989-01-12 Ibm Deutschland Entfernen von partikeln von oberflaechen fester koerper durch laserbeschuss
JPS6418590A (en) * 1987-07-10 1989-01-23 Nissan Motor Method for removing burr of window panel
US4898650A (en) * 1988-05-10 1990-02-06 Amp Incorporated Laser cleaning of metal stock
US5099557A (en) * 1988-07-08 1992-03-31 Engelsberg Audrey C Removal of surface contaminants by irradiation from a high-energy source
US5024968A (en) * 1988-07-08 1991-06-18 Engelsberg Audrey C Removal of surface contaminants by irradiation from a high-energy source
FR2641718B1 (fr) * 1989-01-17 1992-03-20 Ardt Procede de nettoyage de la surface de matieres solides et dispositif de mise en oeuvre de ce procede, utilisant un laser impulsionnel de puissance, a impulsions courtes, dont on focalise le faisceau sur la surface a nettoyer
GB2233334A (en) * 1989-06-29 1991-01-09 Exitech Ltd Surface treatment of polymer materials by the action of pulses of UV radiation
US4920994A (en) * 1989-09-12 1990-05-01 The United States Of America As Represented By The United States Department Of Energy Laser removal of sludge from steam generators
US5151135A (en) * 1989-09-15 1992-09-29 Amoco Corporation Method for cleaning surfaces using UV lasers
US4987286A (en) * 1989-10-30 1991-01-22 University Of Iowa Research Foundation Method and apparatus for removing minute particles from a surface
US4979180A (en) * 1989-11-24 1990-12-18 Muncheryan Arthur M Modular interchangeable laser system
US5023424A (en) * 1990-01-22 1991-06-11 Tencor Instruments Shock wave particle removal method and apparatus
US5322988A (en) * 1990-03-29 1994-06-21 The United States Of America As Represented By The Secretary Of The Navy Laser texturing
JPH0834198B2 (ja) * 1990-11-28 1996-03-29 信越半導体株式会社 Soi基板における単結晶薄膜層の膜厚制御方法
US5093279A (en) * 1991-02-01 1992-03-03 International Business Machines Corporation Laser ablation damascene process
JP2920850B2 (ja) * 1991-03-25 1999-07-19 東京エレクトロン株式会社 半導体の表面処理方法及びその装置
US5194723A (en) * 1991-12-24 1993-03-16 Maxwell Laboratories, Inc. Photoacoustic control of a pulsed light material removal process
US5328517A (en) * 1991-12-24 1994-07-12 Mcdonnell Douglas Corporation Method and system for removing a coating from a substrate using radiant energy and a particle stream
US5204517A (en) * 1991-12-24 1993-04-20 Maxwell Laboratories, Inc. Method and system for control of a material removal process using spectral emission discrimination
US5228206A (en) * 1992-01-15 1993-07-20 Submicron Systems, Inc. Cluster tool dry cleaning system
US5319183A (en) * 1992-02-18 1994-06-07 Fujitsu Limited Method and apparatus for cutting patterns of printed wiring boards and method and apparatus for cleaning printed wiring boards
US5193738A (en) * 1992-09-18 1993-03-16 Microfab Technologies, Inc. Methods and apparatus for soldering without using flux
US5373140A (en) * 1993-03-16 1994-12-13 Vernay Laboratories, Inc. System for cleaning molding equipment using a laser
TW252211B (fi) * 1993-04-12 1995-07-21 Cauldron Ltd Parthership
US5418349A (en) * 1993-06-04 1995-05-23 Xerox Corporation Process for reducing thickness of a polymeric photoconductive coating on a photoreceptor with laser
US5403627A (en) * 1993-06-04 1995-04-04 Xerox Corporation Process and apparatus for treating a photoreceptor coating

Also Published As

Publication number Publication date
LV11855A (lv) 1997-10-20
KR100265583B1 (ko) 2000-09-15
AU698923B2 (en) 1998-11-12
WO1996009128A1 (en) 1996-03-28
HUT77466A (hu) 1998-05-28
FI971136A0 (fi) 1997-03-18
LV11855B (en) 1998-04-20
DE69517988D1 (de) 2000-08-17
ATE194515T1 (de) 2000-07-15
TW259882B (en) 1995-10-11
CA2200199A1 (en) 1996-03-28
MY112591A (en) 2001-07-31
US5643472A (en) 1997-07-01
AU3593795A (en) 1996-04-09
CZ78897A3 (en) 1997-08-13
BR9508965A (pt) 1997-09-30
EP0782483B1 (en) 2000-07-12
MX9702097A (es) 1997-06-28
RU2141879C1 (ru) 1999-11-27
HK1004944A1 (en) 1998-12-18
JP3267977B2 (ja) 2002-03-25
EP0782483A1 (en) 1997-07-09
CN1096313C (zh) 2002-12-18
NO971090L (no) 1997-05-15
CN1166145A (zh) 1997-11-26
DE69517988T2 (de) 2001-02-22
JPH10504139A (ja) 1998-04-14
NO971090D0 (no) 1997-03-10

Similar Documents

Publication Publication Date Title
FI971136A (fi) Materiaalin valinnainen poisto säteilyllä
MY113873A (en) Removal of material by radiation applied at an oblique angle
MX9709688A (es) Eliminacion de material por medio de radiacion polarizada y aplicacion de radiacion en la parte posterior.
TW372337B (en) Material for forming micropattern and manufacturing method of semiconductor using the material and semiconductor apparatus
MY125775A (en) Method for treating substrates for microelectronics and substrates obtained by said method.
ATE211855T1 (de) Vorrichtung und verfahren zur flüssigkeitsbehandlung von scheibenförmigen gegenständen
MY133102A (en) Method for treating substrates for microelectronics and substrates obtained according to said method
TW252211B (fi)
ATE342403T1 (de) Vorrichtung zur behandlung einer bewegten oberfläche
DK1027207T3 (da) Fremgangsmåde til at behandle en artikel indeholdende en oxiderbar organisk forbindelse
ATE219291T1 (de) Verfahren und vorrichtung zum trocknen von substraten
DE60111203D1 (de) Verfahren und vorrichtung zum kantenformen
ATE418750T1 (de) Verfahren zum entschichten von resistmaterial
DE69901455D1 (de) Verfahren zum vakuumbeschichten eines gewölbten substrates
ATE227611T1 (de) Verfahren und vorrichtung zum behandeln von substraten
ATE251954T1 (de) Vorrichtung zur oberflächenbehandlung und verwendung der vorrichtung
AU2003258615A8 (en) Method for selectively removing material from the surface of a substrate, masking material for a wafer and wafer provided with a masking material
CA2259910A1 (en) Removal of material by radiation applied at an oblique angle
PT1252029E (pt) Metodo para o tratamento ornamental de objectos
JPS51146077A (en) Method of and apparatus for removing matter attached to beltconveyor
EP0955067A3 (de) Verfahren und Einrichtung zum Sterilisieren von Gegenständen
BG103816A (en) Method for the treatment of dicotyledonous seeds and the production of monosperm and another fraction from them

Legal Events

Date Code Title Description
FD Application lapsed