DE69101123D1 - Halbleiterlaser zum Erzeugen sichtbaren Lichts. - Google Patents

Halbleiterlaser zum Erzeugen sichtbaren Lichts.

Info

Publication number
DE69101123D1
DE69101123D1 DE91305540T DE69101123T DE69101123D1 DE 69101123 D1 DE69101123 D1 DE 69101123D1 DE 91305540 T DE91305540 T DE 91305540T DE 69101123 T DE69101123 T DE 69101123T DE 69101123 D1 DE69101123 D1 DE 69101123D1
Authority
DE
Germany
Prior art keywords
visible light
semiconductor laser
generating visible
generating
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE91305540T
Other languages
English (en)
Other versions
DE69101123T2 (de
Inventor
Takashi Murakami
Shigeki Kageyama
Kazuo Mizuguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP16365090A external-priority patent/JP2839337B2/ja
Priority claimed from JP27470090A external-priority patent/JPH04150087A/ja
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE69101123D1 publication Critical patent/DE69101123D1/de
Application granted granted Critical
Publication of DE69101123T2 publication Critical patent/DE69101123T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32325—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm red laser based on InGaP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2206—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on III-V materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2206—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on III-V materials
    • H01S5/2207—GaAsP based
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2206—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on III-V materials
    • H01S5/2209—GaInP based
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2206—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on III-V materials
    • H01S5/221—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on III-V materials containing aluminium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2218—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special optical properties
    • H01S5/2219—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special optical properties absorbing

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
DE91305540T 1990-06-21 1991-06-19 Halbleiterlaser zum Erzeugen sichtbaren Lichts. Expired - Fee Related DE69101123T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP16365090A JP2839337B2 (ja) 1990-06-21 1990-06-21 可視光半導体レーザ
JP27470090A JPH04150087A (ja) 1990-10-12 1990-10-12 可視光半導体レーザ装置

Publications (2)

Publication Number Publication Date
DE69101123D1 true DE69101123D1 (de) 1994-03-17
DE69101123T2 DE69101123T2 (de) 1994-05-11

Family

ID=26489035

Family Applications (1)

Application Number Title Priority Date Filing Date
DE91305540T Expired - Fee Related DE69101123T2 (de) 1990-06-21 1991-06-19 Halbleiterlaser zum Erzeugen sichtbaren Lichts.

Country Status (4)

Country Link
US (1) US5161167A (de)
EP (1) EP0462816B1 (de)
CA (1) CA2045069C (de)
DE (1) DE69101123T2 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5297158A (en) * 1991-04-22 1994-03-22 Matsushita Electric Industrial Co., Ltd. Semiconductor laser device including a gallium-aluminum arsenic compound
KR100230444B1 (ko) * 1992-05-28 1999-11-15 윤종용 반도체 레이저장치 및 이의 제조방법
JPH06244490A (ja) * 1993-02-15 1994-09-02 Sumitomo Electric Ind Ltd 半導体レーザおよびその製造方法
US5523256A (en) * 1993-07-21 1996-06-04 Matsushita Electric Industrial Co., Ltd. Method for producing a semiconductor laser
KR100357787B1 (ko) * 1994-01-31 2003-01-24 가부시끼가이샤 히다치 세이사꾸쇼 도파로형광소자의제조방법
JP3553147B2 (ja) * 1994-09-05 2004-08-11 三菱電機株式会社 半導体層の製造方法
US5832019A (en) * 1994-11-28 1998-11-03 Xerox Corporation Index guided semiconductor laser biode with shallow selective IILD
JPH0955558A (ja) * 1995-08-11 1997-02-25 Sharp Corp 半導体レーザ素子
JP3521792B2 (ja) * 1999-03-03 2004-04-19 松下電器産業株式会社 半導体レーザの製造方法
JP4661088B2 (ja) * 2004-06-01 2011-03-30 住友化学株式会社 ｐｎ接合を有する化合物半導体基板の製造方法
TWI452716B (zh) * 2007-06-08 2014-09-11 Formosa Epitaxy Inc Gallium nitride based light emitting diode and manufacturing method thereof
JP5385526B2 (ja) * 2007-11-16 2014-01-08 ローム株式会社 半導体レーザ
KR102440071B1 (ko) * 2020-10-16 2022-09-05 (주)큐에스아이 반도체 레이저 다이오드 소자 및 그 제조 방법

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5595387A (en) * 1978-12-11 1980-07-19 Fujitsu Ltd Semiconductor light emitting device
GB2139422B (en) * 1983-03-24 1987-06-03 Hitachi Ltd Semiconductor laser and method of fabricating the same
US4470976A (en) * 1983-08-29 1984-09-11 American Cyanamid Company Poly-cation salt of 4-O-polyhexaose-thio-arylene sulfates
JPH0685455B2 (ja) * 1984-07-18 1994-10-26 ソニー株式会社 半導体レーザー
JPH0646667B2 (ja) * 1987-06-17 1994-06-15 日本電気株式会社 ＡｌＧａＩｎＰ半導体レ−ザの作製方法
JP2758597B2 (ja) * 1987-06-17 1998-05-28 日本電気株式会社 半導体レーザ装置
JP2723523B2 (ja) * 1987-10-01 1998-03-09 日本電気株式会社 ＡｌＧａＩｎＰ可視光半導体発光素子
JPH01134985A (ja) * 1987-11-19 1989-05-26 Mitsubishi Electric Corp 半導体レーザ装置
DE68917941T2 (de) * 1988-01-20 1995-04-20 Nippon Electric Co Sichtbares Licht ausstrahlender Halbleiterlaser mit (AlxGa1-x)0.5In0.5P-Kristallschichten und Verfahren zum Züchten eines (AlxGa1-x)0.5In0.5P-Kristalls.
AU613142B2 (en) * 1988-01-20 1991-07-25 Eastman Christensen Company Drill bit with improved steerability
US4922499A (en) * 1988-02-09 1990-05-01 Kabushiki Kaisha Toshiba Semiconductor laser device and the manufacturing method thereof
JP2685209B2 (ja) * 1988-03-25 1997-12-03 株式会社東芝 半導体装置及び半導体発光装置
JPH03104183A (ja) * 1989-09-18 1991-05-01 Mitsubishi Electric Corp 半導体レーザ及びその製造方法
JPH03127891A (ja) * 1989-10-13 1991-05-30 Mitsubishi Electric Corp 半導体レーザ装置

Also Published As

Publication number Publication date
EP0462816B1 (de) 1994-02-02
EP0462816A2 (de) 1991-12-27
CA2045069C (en) 1995-08-22
CA2045069A1 (en) 1991-12-22
DE69101123T2 (de) 1994-05-11
US5161167A (en) 1992-11-03
EP0462816A3 (en) 1992-04-15

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee