JPH11507298A - 偏光した輻射及び裏側への照射による材料の除去 - Google Patents
偏光した輻射及び裏側への照射による材料の除去Info
- Publication number
- JPH11507298A JPH11507298A JP9501674A JP50167497A JPH11507298A JP H11507298 A JPH11507298 A JP H11507298A JP 9501674 A JP9501674 A JP 9501674A JP 50167497 A JP50167497 A JP 50167497A JP H11507298 A JPH11507298 A JP H11507298A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- energy
- unwanted
- treated surface
- laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70566—Polarisation control
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
- B08B7/0042—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like by laser
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
- G03F7/704—Scanned exposure beam, e.g. raster-, rotary- and vector scanning
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/32051—Deposition of metallic or metal-silicide layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76819—Smoothing of the dielectric
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Public Health (AREA)
- Epidemiology (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Atmospheric Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- Toxicology (AREA)
- High Energy & Nuclear Physics (AREA)
- Plasma & Fusion (AREA)
- Electromagnetism (AREA)
- Drying Of Semiconductors (AREA)
- Treatments Of Macromolecular Shaped Articles (AREA)
- Cleaning In General (AREA)
- Laser Beam Processing (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Materials For Medical Uses (AREA)
- Polarising Elements (AREA)
- Vessels, Lead-In Wires, Accessory Apparatuses For Cathode-Ray Tubes (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Abstract
Description
Claims (1)
- 【特許請求の範囲】 1.不要物質に隣接しあるいはその下に存在する、処理表面に残すべき望まし い物質の物理特性に影響することなく、不要物質を基材の処理表面から選択的に 除去する方法であって、 不要物質を、処理表面から該物質を除去するのに十分であるが、望ましい材料 の物性を変えるには不十分な空間的及び時間的密度の偏光した高エネルギー光子 で照射する工程を有することを特徴とする方法。 2.望ましい物質が基材と該基材上の薄膜とを含む請求項1記載の方法。 3.薄膜がクロム、インジウム錫酸化物、アルミニウム及びニッケルよりなる 群から選択される請求項2 記載の方法。 4.基材が石英、ホウケイ酸ガラス、シリコン、鋼及びアルミニウムよりなる 群から選択される請求項3 記載の方法。 5.薄膜がクロムであり、基材が石英又はホウケイ酸ガラスである請求項4 記 載の方法。 6.薄膜がインジウム錫酸化物であり、基材が石英又はホウケイ酸ガラスであ る請求項4 記載の方法。 7.薄膜がアルミニウムであり、基材がシリコンである請求項4 記載の方法。 8.薄膜が酸化ハフニウムであり、基材が石英又はホウケイ酸ガラスである請 求項4 記載の方法。 9.薄膜がニッケルであり、基材が鋼又はアルミニウムである請求項4 記載の 方法。 10.更に不要物質を横切って基材に対して実質的に不活性であるガスの流れを 同時に導入する工程を有する請求項1 記載の方法。 11.不要物質に隣接しあるいはその下に存在する、処理表面に残すべき望まし い物質の物理特性に影響することなく、不要物質を基材の処理表面から選択的に 除去する方法であって、 レーザー光のs-成分とp-成分の一方がs-成分とp-成分の他方の成分に優越する ように、レーザー光を偏光させる工程と、 該偏光したレーザー光を、処理表面から不要物質を除去するのに十分であるが 、望ましい材料の物性を変えるには不十分なエネルギー及びパワー束で該処理表 面に照射する工程とを有することを特徴とする方法。 12.レーザー光がパルス発振のKrF エキシマー・レーザーで発生される請求項 11記載の方法。 13.更に基材に対して実質的に不活性なガスの流れを、不要物質を横切って同 時に導入する工程を有する請求項11記載の方法。 14.不要物質に隣接しあるいはその下に存在する、処理表面に残すべき望まし い物質の物性に影響することなく、不要物質を基材の処理表面から選択的に除去 する方法であって、 該不要物質を、不要物質を構成する結合を破壊するのに十分であるが、望まし い材料の物性に変化をもたらすレベルに望ましい物質の温度を上昇させるには不 十分なエネルギー及びパワー束の偏光した高エネルギー光子で照射する工程を有 することを特徴とする方法。 15.更に基材に対して実質的に不活性なガスの流れを、不要物質を横切って同 時に導入する工程を有する請求項14記載の方法。 16.不要物質に隣接しあるいはその下に存在する、基材に残すべき望ましい物 質の物性に影響することなく、不要物質を基材の第一の側から選択的に除去する 方法であって、 該基材は第一の側の反対側の第二の側を有し、 基材の第二の側を、第一の側から不要物質を除去するのに十分であるが、望ま しい材料の物性を変えるには不十分な空間的及び時間的密度の高エネルギー光子 で照射する工程を有することを特徴とする方法。 17.不要物質に隣接しあるいはその下に存在する、基材上に残すべき望ましい 物質の物性に影響することなく、不要物質を基材から選択的に除去する方法であ って、 該基材と不要物質はその間に界面を有し、 該界面を、第一の側から不要物質を除去するのに十分であるが、望ましい材料 の物性を変えるには不十分な空間的及び時間的密度の高エネルギー光子で照射す る工程を有することを特徴とする方法。 18.照射工程が基材を通って界面に光子を供給する請求項17記載の方法。 19.基材が照射に対して実質的に透明である請求項16又は18記載の方法。 20.更に基材に対して実質的に不活性なガスの流れを同時に導入する工程を有 する請求項16又は18記載の方法。 21.ガスの流れが、不要物質を横切って導入される請求項20記載の方法。 22.基材が石英であり、不要物質が多結晶シリコンである請求項16又は18記載 の方法。 23.不要物質によって占められた結合箇所を持つ基材の処理表面への望ましい 物質の化学吸着を強化する方法であって、 基材に対して実質的に不活性なガスの流れを処理表面を横切って導入する工程 と、 同時に、処理表面から不要物質を除去するのに十分な空間的及び時間的密度の 高エネルギー光子で処理表面を照射する工程と、 該基材を望ましい物質に接触させる工程とを有することを特徴とする方法。 24.基材が酸化物である請求項23記載の方法。 25.望ましい物質が有機物である請求項24記載の方法。 26.基材が酸化シリコンである請求項25記載の方法。 27.望ましい物質が有機金属である請求項26記載の方法。 28.望ましい物質がトリメチルアルミニウムである請求項27記載の方法。
Applications Claiming Priority (3)
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US47276295A | 1995-06-07 | 1995-06-07 | |
US08/472,762 | 1995-06-07 | ||
PCT/US1996/009331 WO1996041370A1 (en) | 1995-06-07 | 1996-06-05 | Removal of material by polarized radiation and back side application of radiation |
Publications (2)
Publication Number | Publication Date |
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JPH11507298A true JPH11507298A (ja) | 1999-06-29 |
JP4089833B2 JP4089833B2 (ja) | 2008-05-28 |
Family
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Family Applications (1)
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JP50167497A Expired - Fee Related JP4089833B2 (ja) | 1995-06-07 | 1996-06-05 | 偏光した輻射及び裏側への照射による材料の除去 |
Country Status (19)
Country | Link |
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US (1) | US5958268A (ja) |
EP (1) | EP0834191B1 (ja) |
JP (1) | JP4089833B2 (ja) |
KR (1) | KR19990022679A (ja) |
CN (1) | CN100390938C (ja) |
AT (1) | ATE211584T1 (ja) |
AU (1) | AU5989296A (ja) |
BR (1) | BR9609065A (ja) |
CA (2) | CA2222502C (ja) |
CZ (1) | CZ378297A3 (ja) |
DE (1) | DE69618641T2 (ja) |
EA (1) | EA199800002A1 (ja) |
HU (1) | HUP9802661A2 (ja) |
LV (1) | LV12080B (ja) |
MX (1) | MX9709688A (ja) |
MY (1) | MY121934A (ja) |
NO (1) | NO975637L (ja) |
TW (1) | TW284907B (ja) |
WO (1) | WO1996041370A1 (ja) |
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- 1996-06-05 CN CNB961960698A patent/CN100390938C/zh not_active Expired - Fee Related
- 1996-06-05 AT AT96917247T patent/ATE211584T1/de active
- 1996-06-05 HU HU9802661A patent/HUP9802661A2/hu unknown
- 1996-06-05 CA CA002570713A patent/CA2570713A1/en not_active Abandoned
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- 1996-06-05 WO PCT/US1996/009331 patent/WO1996041370A1/en not_active Application Discontinuation
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JP2005340668A (ja) * | 2004-05-28 | 2005-12-08 | Purex:Kk | 有機物質の除去方法および除去装置 |
JP2014099619A (ja) * | 2006-10-19 | 2014-05-29 | Quantam Global Technologies Llc | 基板処理構成部品からの残留物の除去 |
WO2010006067A2 (en) * | 2008-07-09 | 2010-01-14 | Fei Company | Method and apparatus for laser machining |
WO2010006067A3 (en) * | 2008-07-09 | 2010-05-14 | Fei Company | Method and apparatus for laser machining |
Also Published As
Publication number | Publication date |
---|---|
BR9609065A (pt) | 1999-01-26 |
CN1194057A (zh) | 1998-09-23 |
MY121934A (en) | 2006-03-31 |
HUP9802661A2 (hu) | 1999-03-29 |
CN100390938C (zh) | 2008-05-28 |
CA2222502A1 (en) | 1996-12-19 |
WO1996041370A1 (en) | 1996-12-19 |
KR19990022679A (ko) | 1999-03-25 |
MX9709688A (es) | 1998-11-30 |
TW284907B (en) | 1996-09-01 |
JP4089833B2 (ja) | 2008-05-28 |
CA2222502C (en) | 2007-05-08 |
EP0834191A1 (en) | 1998-04-08 |
ATE211584T1 (de) | 2002-01-15 |
CZ378297A3 (cs) | 1998-06-17 |
EA199800002A1 (ru) | 1998-08-27 |
LV12080A (lv) | 1998-06-20 |
DE69618641T2 (de) | 2002-08-14 |
US5958268A (en) | 1999-09-28 |
CA2570713A1 (en) | 1996-12-19 |
EP0834191B1 (en) | 2002-01-02 |
AU5989296A (en) | 1996-12-30 |
NO975637L (no) | 1998-01-28 |
LV12080B (en) | 1998-10-20 |
DE69618641D1 (de) | 2002-02-28 |
NO975637D0 (no) | 1997-12-04 |
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