DK1650811T3 - Stakket fotoelektrisk converter - Google Patents
Stakket fotoelektrisk converterInfo
- Publication number
- DK1650811T3 DK1650811T3 DK04747581.9T DK04747581T DK1650811T3 DK 1650811 T3 DK1650811 T3 DK 1650811T3 DK 04747581 T DK04747581 T DK 04747581T DK 1650811 T3 DK1650811 T3 DK 1650811T3
- Authority
- DK
- Denmark
- Prior art keywords
- photoelectric converter
- stacked photoelectric
- stacked
- converter
- photoelectric
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
- H01L31/077—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells the devices comprising monocrystalline or polycrystalline materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
- H01L31/076—Multiple junction or tandem solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003279493A JP4063735B2 (ja) | 2003-07-24 | 2003-07-24 | 積層型光電変換装置を含む薄膜光電変換モジュール |
JP2003367536A JP4068043B2 (ja) | 2003-10-28 | 2003-10-28 | 積層型光電変換装置 |
JP2003367535A JP2005135986A (ja) | 2003-10-28 | 2003-10-28 | 積層型光電変換装置 |
JP2004091897A JP4025744B2 (ja) | 2004-03-26 | 2004-03-26 | 積層型光電変換装置の製造方法 |
PCT/JP2004/010115 WO2005011001A1 (ja) | 2003-07-24 | 2004-07-15 | 積層型光電変換装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
DK1650811T3 true DK1650811T3 (da) | 2013-07-08 |
Family
ID=34109006
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DK04747581.9T DK1650811T3 (da) | 2003-07-24 | 2004-07-15 | Stakket fotoelektrisk converter |
Country Status (7)
Country | Link |
---|---|
US (1) | US7550665B2 (da) |
EP (1) | EP1650811B1 (da) |
KR (1) | KR101008274B1 (da) |
AU (1) | AU2004259485B2 (da) |
DK (1) | DK1650811T3 (da) |
ES (1) | ES2405597T3 (da) |
WO (1) | WO2005011001A1 (da) |
Families Citing this family (58)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7322207B2 (en) | 2004-07-30 | 2008-01-29 | Mitsubishi Heavy Industries, Ltd. | Air refrigerant cooling apparatus and air refrigeration system using the air refigerant cooling apparatus |
KR100697279B1 (ko) * | 2005-02-03 | 2007-03-20 | 삼성전자주식회사 | 수직형 광검출기를 가지는 이미지 센서 및 그 제조 방법 |
WO2007026480A1 (ja) * | 2005-08-30 | 2007-03-08 | Kaneka Corporation | シリコン系薄膜光電変換装置、及びその製造方法 |
US7671271B2 (en) * | 2006-03-08 | 2010-03-02 | National Science And Technology Dev. Agency | Thin film solar cell and its fabrication process |
US20100000598A1 (en) * | 2006-04-13 | 2010-01-07 | Cesare Lorenzetti | Photovoltaic Cell |
JP2008010818A (ja) * | 2006-06-01 | 2008-01-17 | Sumitomo Electric Ind Ltd | 基板、基板検査方法、素子および基板の製造方法 |
US7655542B2 (en) | 2006-06-23 | 2010-02-02 | Applied Materials, Inc. | Methods and apparatus for depositing a microcrystalline silicon film for photovoltaic device |
US20080072953A1 (en) * | 2006-09-27 | 2008-03-27 | Thinsilicon Corp. | Back contact device for photovoltaic cells and method of manufacturing a back contact device |
US7582515B2 (en) * | 2007-01-18 | 2009-09-01 | Applied Materials, Inc. | Multi-junction solar cells and methods and apparatuses for forming the same |
US8203071B2 (en) | 2007-01-18 | 2012-06-19 | Applied Materials, Inc. | Multi-junction solar cells and methods and apparatuses for forming the same |
JP2008181965A (ja) * | 2007-01-23 | 2008-08-07 | Sharp Corp | 積層型光電変換装置及びその製造方法 |
WO2008150769A2 (en) * | 2007-05-31 | 2008-12-11 | Thinsilicon Corporation | Photovoltaic device and method of manufacturing photovoltaic devices |
JP4411337B2 (ja) * | 2007-06-25 | 2010-02-10 | シャープ株式会社 | 積層型光電変換装置 |
US7875486B2 (en) | 2007-07-10 | 2011-01-25 | Applied Materials, Inc. | Solar cells and methods and apparatuses for forming the same including I-layer and N-layer chamber cleaning |
US20090104733A1 (en) * | 2007-10-22 | 2009-04-23 | Yong Kee Chae | Microcrystalline silicon deposition for thin film solar applications |
US8410355B2 (en) * | 2007-11-02 | 2013-04-02 | Kaneka Corporation | Thin film photoelectric conversion device having a stacked transparent oxide and carbon intermediate layer |
WO2009059238A1 (en) | 2007-11-02 | 2009-05-07 | Applied Materials, Inc. | Plasma treatment between deposition processes |
FR2924803A1 (fr) * | 2007-12-11 | 2009-06-12 | Commissariat Energie Atomique | Dispositif d'analyse spectroscopique interferentielle |
DE102008008726A1 (de) * | 2008-02-12 | 2009-09-24 | Schott Solar Gmbh | Photovoltaisches Modul und Verfahren zu dessen Herstellung |
DE112009000498T5 (de) * | 2008-03-07 | 2011-02-24 | National University Corporation Tohoku University, Sendai | Photoelektrische Wandlerelementstruktur und Solarzelle |
KR100876613B1 (ko) * | 2008-05-27 | 2008-12-31 | 한국철강 주식회사 | 탄뎀 박막 실리콘 태양전지 및 그 제조방법 |
JP2011530161A (ja) * | 2008-08-01 | 2011-12-15 | エーリコン・ソーラー・アーゲー・トリューバッハ | 光電池構造体の製造方法 |
US8895842B2 (en) | 2008-08-29 | 2014-11-25 | Applied Materials, Inc. | High quality TCO-silicon interface contact structure for high efficiency thin film silicon solar cells |
WO2010023991A1 (ja) * | 2008-08-29 | 2010-03-04 | 株式会社アルバック | 光電変換装置の製造方法、光電変換装置、及び光電変換装置の製造システム |
US20100269896A1 (en) * | 2008-09-11 | 2010-10-28 | Applied Materials, Inc. | Microcrystalline silicon alloys for thin film and wafer based solar applications |
US20100078064A1 (en) * | 2008-09-29 | 2010-04-01 | Thinsilicion Corporation | Monolithically-integrated solar module |
US8530267B2 (en) * | 2008-10-14 | 2013-09-10 | Kaneka Corporation | Silicon-based thin film solar cell and method for manufacturing same |
US20110259410A1 (en) * | 2009-01-19 | 2011-10-27 | Oerlikon Solar Ag, Truebbach | Thin-film silicon tandem cell |
TWI413267B (zh) * | 2009-01-30 | 2013-10-21 | Ulvac Inc | 光電轉換裝置之製造方法、光電轉換裝置、光電轉換裝置之製造系統、及光電轉換裝置製造系統之使用方法 |
TWI415283B (zh) * | 2009-02-18 | 2013-11-11 | Au Optronics Corp | X射線感測器及其製作方法 |
EP2356696A4 (en) * | 2009-05-06 | 2013-05-15 | Thinsilicon Corp | PHOTOVOLTAIC CELLS AND METHOD FOR REINFORCING LIGHT DETECTION IN SEMICONDUCTOR LAYERED TABLES |
JP2012523716A (ja) * | 2009-06-10 | 2012-10-04 | シンシリコン・コーポレーション | 光起電モジュール、及び、複数半導体層スタックを有する光起電モジュールの製造方法 |
US20110114156A1 (en) * | 2009-06-10 | 2011-05-19 | Thinsilicon Corporation | Photovoltaic modules having a built-in bypass diode and methods for manufacturing photovoltaic modules having a built-in bypass diode |
EP2261996B8 (en) * | 2009-06-10 | 2011-10-19 | Suinno Solar Oy | High power solar cell |
KR101074290B1 (ko) * | 2009-09-04 | 2011-10-18 | 한국철강 주식회사 | 광기전력 장치 및 광기전력 장치의 제조 방법 |
WO2009141459A2 (en) * | 2009-09-07 | 2009-11-26 | Oerlikon Solar Ag, Truebbach | Method for manufacturing a photovoltaic cell structure |
US20110120536A1 (en) * | 2009-11-20 | 2011-05-26 | Dapeng Wang | Roughness control of a wavelength selective reflector layer for thin film solar applications |
US20120325284A1 (en) * | 2009-12-22 | 2012-12-27 | Oerlikon Solar Ag, Truebbach | Thin-film silicon tandem solar cell and method for manufacturing the same |
JP2011176164A (ja) * | 2010-02-25 | 2011-09-08 | Kaneka Corp | 積層型薄膜光電変換装置 |
JP2011199235A (ja) * | 2010-02-26 | 2011-10-06 | Sanyo Electric Co Ltd | 太陽電池 |
KR101032270B1 (ko) * | 2010-03-17 | 2011-05-06 | 한국철강 주식회사 | 플렉서블 또는 인플렉서블 기판을 포함하는 광기전력 장치 및 광기전력 장치의 제조 방법 |
KR101100111B1 (ko) * | 2010-03-22 | 2011-12-29 | 한국철강 주식회사 | 인플렉서블 또는 플렉서블 기판을 포함하는 광기전력 장치 및 이의 제조 방법 |
KR101039719B1 (ko) | 2010-03-26 | 2011-06-09 | 한국철강 주식회사 | 플렉서블 기판 또는 인플렉서블 기판을 포함하는 광기전력 장치 및 이의 제조 방법 |
KR101194243B1 (ko) * | 2010-04-20 | 2012-10-29 | 한국철강 주식회사 | 탠덤형 광기전력 장치 및 이의 제조 방법 |
JP2011249497A (ja) * | 2010-05-26 | 2011-12-08 | Sharp Corp | 積層型光電変換装置用中間層、積層型光電変換装置および積層型光電変換装置の製造方法 |
JP4775869B1 (ja) * | 2010-05-27 | 2011-09-21 | シャープ株式会社 | 光電変換装置 |
DE102010053382A1 (de) * | 2010-12-03 | 2012-06-06 | Forschungszentrum Jülich GmbH | Verfahren zur Herstellung einer Solarzelle und eine Solarzelle |
WO2012113441A1 (en) * | 2011-02-21 | 2012-08-30 | Applied Materials, Inc. | Thin-film solar fabrication process, deposition method for a layer stack of a solar cell, and solar cell precursor |
JP5681607B2 (ja) * | 2011-03-28 | 2015-03-11 | 株式会社東芝 | 光電変換素子 |
WO2013022086A1 (ja) * | 2011-08-11 | 2013-02-14 | 株式会社カネカ | 積層型光電変換装置の製造方法 |
DE102011081655A1 (de) * | 2011-08-26 | 2013-02-28 | Robert Bosch Gmbh | Dünnschicht-Solarzelle |
WO2013031906A1 (ja) * | 2011-09-01 | 2013-03-07 | シャープ株式会社 | 光電変換装置およびその製造方法 |
JP2013077685A (ja) * | 2011-09-30 | 2013-04-25 | Semiconductor Energy Lab Co Ltd | 光電変換装置 |
TWI443846B (zh) * | 2011-11-01 | 2014-07-01 | Ind Tech Res Inst | 透明導電層結構 |
KR20130112148A (ko) * | 2012-04-03 | 2013-10-14 | 엘지전자 주식회사 | 박막 태양 전지 |
EP2903032A4 (en) | 2012-09-28 | 2016-06-08 | Kaneka Corp | PHOTOVOLTAIC THIN-LAYER DEVICE AND METHOD FOR THE PRODUCTION THEREOF |
US10642121B2 (en) * | 2017-03-02 | 2020-05-05 | Korea Electronics Technology Institute | Reflective display device for visible light and infrared camouflage and active camouflage device using the same |
EP4010519A4 (en) | 2019-08-09 | 2023-09-13 | Leading Edge Equipment Technologies, Inc. | PRODUCING A RIBBON OR SLICE WITH REGIONS OF LOW OXYGEN CONCENTRATION |
Family Cites Families (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4377723A (en) | 1980-05-02 | 1983-03-22 | The University Of Delaware | High efficiency thin-film multiple-gap photovoltaic device |
US4398054A (en) | 1982-04-12 | 1983-08-09 | Chevron Research Company | Compensated amorphous silicon solar cell incorporating an insulating layer |
JPS5935016A (ja) * | 1982-08-18 | 1984-02-25 | Agency Of Ind Science & Technol | 含水素シリコン層の製造方法 |
JPS62158368A (ja) | 1985-12-28 | 1987-07-14 | Ricoh Co Ltd | 光センサ |
JPS62234379A (ja) * | 1986-04-04 | 1987-10-14 | Kanegafuchi Chem Ind Co Ltd | 半導体装置 |
KR890002826B1 (ko) * | 1986-07-16 | 1989-08-04 | 최현택 | 대기오염 방지 및 에너지 절약용 조성물 |
JPH073876B2 (ja) * | 1986-11-10 | 1995-01-18 | 三洋電機株式会社 | 光起電力装置 |
US4776894A (en) | 1986-08-18 | 1988-10-11 | Sanyo Electric Co., Ltd. | Photovoltaic device |
US4891330A (en) * | 1987-07-27 | 1990-01-02 | Energy Conversion Devices, Inc. | Method of fabricating n-type and p-type microcrystalline semiconductor alloy material including band gap widening elements |
JPH0693519B2 (ja) * | 1987-09-17 | 1994-11-16 | 株式会社富士電機総合研究所 | 非晶質光電変換装置 |
US5246506A (en) | 1991-07-16 | 1993-09-21 | Solarex Corporation | Multijunction photovoltaic device and fabrication method |
JP3248227B2 (ja) | 1991-09-30 | 2002-01-21 | 富士電機株式会社 | 薄膜太陽電池およびその製造方法 |
JP3047666B2 (ja) * | 1993-03-16 | 2000-05-29 | 富士電機株式会社 | シリコンオキサイド半導体膜の成膜方法 |
JPH0595126A (ja) * | 1991-10-01 | 1993-04-16 | Fuji Electric Co Ltd | 薄膜太陽電池およびその製造方法 |
JPH0715025A (ja) | 1993-06-21 | 1995-01-17 | Sanyo Electric Co Ltd | 光起電力装置の製造方法 |
JP2961350B2 (ja) * | 1994-08-18 | 1999-10-12 | 本荘ソレックス株式会社 | 微細パターンを有するネサ膜の製造方法 |
JPH11186574A (ja) * | 1997-12-24 | 1999-07-09 | Kanegafuchi Chem Ind Co Ltd | シリコン系薄膜光電変換装置 |
JP3768672B2 (ja) | 1998-02-26 | 2006-04-19 | キヤノン株式会社 | 積層型光起電力素子 |
GB9815271D0 (en) | 1998-07-14 | 1998-09-09 | Cambridge Display Tech Ltd | Particles and devices comprising particles |
JP2000138384A (ja) * | 1998-10-30 | 2000-05-16 | Sanyo Electric Co Ltd | 非晶質半導体素子及びその製造方法 |
JP4158267B2 (ja) * | 1999-03-15 | 2008-10-01 | 富士電機ホールディングス株式会社 | 非単結晶太陽電池 |
JP4032610B2 (ja) * | 2000-06-16 | 2008-01-16 | 富士電機アドバンストテクノロジー株式会社 | 非単結晶薄膜太陽電池の製造方法 |
JP4110718B2 (ja) | 2000-08-29 | 2008-07-02 | 富士電機アドバンストテクノロジー株式会社 | 多接合型薄膜太陽電池の製造方法 |
JP4903940B2 (ja) | 2001-02-08 | 2012-03-28 | 株式会社カネカ | タンデム型薄膜太陽電池の製造方法 |
US6632993B2 (en) * | 2000-10-05 | 2003-10-14 | Kaneka Corporation | Photovoltaic module |
JP2002261308A (ja) * | 2001-03-01 | 2002-09-13 | Kanegafuchi Chem Ind Co Ltd | 薄膜光電変換モジュール |
JP2002170973A (ja) | 2000-12-01 | 2002-06-14 | Canon Inc | 半導体素子の形成方法及び半導体素子 |
JP2002261305A (ja) * | 2001-02-28 | 2002-09-13 | Toyota Central Res & Dev Lab Inc | 薄膜多結晶シリコン太陽電池及びその製造方法 |
JP2003124481A (ja) | 2001-10-11 | 2003-04-25 | Mitsubishi Heavy Ind Ltd | 太陽電池 |
JP2003142709A (ja) | 2001-10-31 | 2003-05-16 | Sharp Corp | 積層型太陽電池およびその製造方法 |
JP2003258297A (ja) * | 2002-02-27 | 2003-09-12 | Shiro Sakai | 窒化ガリウム系化合物半導体装置 |
JP4284582B2 (ja) | 2002-03-04 | 2009-06-24 | 富士電機システムズ株式会社 | 多接合型薄膜太陽電池とその製造方法 |
-
2004
- 2004-07-15 AU AU2004259485A patent/AU2004259485B2/en not_active Ceased
- 2004-07-15 US US10/530,283 patent/US7550665B2/en active Active
- 2004-07-15 ES ES04747581T patent/ES2405597T3/es active Active
- 2004-07-15 KR KR1020057007418A patent/KR101008274B1/ko not_active IP Right Cessation
- 2004-07-15 DK DK04747581.9T patent/DK1650811T3/da active
- 2004-07-15 WO PCT/JP2004/010115 patent/WO2005011001A1/ja active Application Filing
- 2004-07-15 EP EP04747581A patent/EP1650811B1/en not_active Not-in-force
Also Published As
Publication number | Publication date |
---|---|
US20060043517A1 (en) | 2006-03-02 |
EP1650811A4 (en) | 2012-07-11 |
AU2004259485A1 (en) | 2005-02-03 |
KR101008274B1 (ko) | 2011-01-14 |
AU2004259485B2 (en) | 2009-04-23 |
EP1650811B1 (en) | 2013-04-03 |
US7550665B2 (en) | 2009-06-23 |
KR20060067919A (ko) | 2006-06-20 |
ES2405597T3 (es) | 2013-05-31 |
WO2005011001A1 (ja) | 2005-02-03 |
EP1650811A1 (en) | 2006-04-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DK1650811T3 (da) | Stakket fotoelektrisk converter | |
FR2858136B1 (fr) | Convertisseur continu-continu | |
DE602004024016D1 (de) | Elektroakustische Wandlung | |
DE60311032D1 (de) | Wandlervorrichtung | |
DE602004018654D1 (de) | Se | |
DE602004027152D1 (de) | Ischen umwandlungsmaterials | |
DE602004015361D1 (de) | Fotoelektrische Kodiereinrichtung | |
DE50304039D1 (de) | Stapelbehälter | |
DK1597187T3 (da) | Lasteoptagelsesindretning | |
DE602004029302D1 (de) | Stromrichterschaltung | |
DE602004022994D1 (de) | Wandlerschaltung | |
DE602004000647D1 (de) | Mikrolinsenraster | |
DE60334690D1 (de) | Energiewandler | |
DK1685276T3 (da) | Energikonverteringsindretning | |
DE602004012938D1 (de) | Fotokoppler | |
DE502004003823D1 (de) | Kran | |
NO20034599D0 (no) | Brokonstruksjon | |
DE602004012181D1 (de) | Thermo-elektrochemische Umsetzungsanordnung | |
FR2863120B1 (fr) | Convertisseur analogique-numerique rapide | |
DE60310171D1 (de) | Wellenlängenumsetzer | |
DE60317285D1 (de) | Fotoelektrische Umwandlungsvorrichtung | |
ITTO20020782A1 (it) | Convertitore dc-dc. | |
DE602004008368D1 (de) | Kaschiermaschine | |
NO20034600L (no) | Brokonstruksjon | |
DE60213622D1 (de) | Abwärtswandler |