DE69939410D1 - Festkörperbildaufnahmevorrichtung und System unter Verwendung einer solchen Vorrichtung - Google Patents

Festkörperbildaufnahmevorrichtung und System unter Verwendung einer solchen Vorrichtung

Info

Publication number
DE69939410D1
DE69939410D1 DE69939410T DE69939410T DE69939410D1 DE 69939410 D1 DE69939410 D1 DE 69939410D1 DE 69939410 T DE69939410 T DE 69939410T DE 69939410 T DE69939410 T DE 69939410T DE 69939410 D1 DE69939410 D1 DE 69939410D1
Authority
DE
Germany
Prior art keywords
solid state
state imaging
imaging device
solid
state
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69939410T
Other languages
English (en)
Inventor
Seiji Hashimoto
Junichi Hoshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP12139098A external-priority patent/JP3337976B2/ja
Priority claimed from JP13825398A external-priority patent/JP3854720B2/ja
Priority claimed from JP05843799A external-priority patent/JP4185615B2/ja
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of DE69939410D1 publication Critical patent/DE69939410D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N3/00—Scanning details of television systems; Combination thereof with generation of supply voltages
    • H04N3/10—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical
    • H04N3/14—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices
    • H04N3/15—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices for picture signal generation
    • H04N3/155—Control of the image-sensor operation, e.g. image processing within the image-sensor
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14641—Electronic components shared by two or more pixel-elements, e.g. one amplifier shared by two pixel elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14645—Colour imagers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
    • H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
    • H04N25/134—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements based on three different wavelength filter elements
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
    • H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
    • H04N25/135—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements based on four or more different wavelength filter elements
    • H04N25/136—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements based on four or more different wavelength filter elements using complementary colours
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/48—Increasing resolution by shifting the sensor relative to the scene
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/778—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Signal Processing (AREA)
  • Multimedia (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Facsimile Heads (AREA)
DE69939410T 1998-04-30 1999-04-29 Festkörperbildaufnahmevorrichtung und System unter Verwendung einer solchen Vorrichtung Expired - Lifetime DE69939410D1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP12139098A JP3337976B2 (ja) 1998-04-30 1998-04-30 撮像装置
JP13825398A JP3854720B2 (ja) 1998-05-20 1998-05-20 撮像装置及びそれを用いた撮像システム
JP05843799A JP4185615B2 (ja) 1999-03-05 1999-03-05 撮像装置及びそれを用いた撮像システム

Publications (1)

Publication Number Publication Date
DE69939410D1 true DE69939410D1 (de) 2008-10-09

Family

ID=27296586

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69939410T Expired - Lifetime DE69939410D1 (de) 1998-04-30 1999-04-29 Festkörperbildaufnahmevorrichtung und System unter Verwendung einer solchen Vorrichtung

Country Status (5)

Country Link
US (6) US6977684B1 (de)
EP (2) EP0954032B1 (de)
KR (1) KR100331995B1 (de)
CN (1) CN1215703C (de)
DE (1) DE69939410D1 (de)

Families Citing this family (118)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19990084630A (ko) * 1998-05-08 1999-12-06 김영환 씨모스 이미지 센서 및 그 구동 방법
JP3164069B2 (ja) 1998-07-21 2001-05-08 日本電気株式会社 固体撮像装置
US6239456B1 (en) 1998-08-19 2001-05-29 Photobit Corporation Lock in pinned photodiode photodetector
US6654057B1 (en) 1999-06-17 2003-11-25 Micron Technology, Inc. Active pixel sensor with a diagonal active area
EP1102323B1 (de) 1999-11-19 2012-08-15 CSEM Centre Suisse d'Electronique et de Microtechnique SA - Recherche et Développement Verfahren zum Detektieren von elektromagnetischer Strahlung mittels eines optoelektronischen Sensors
KR100683396B1 (ko) * 1999-12-28 2007-02-15 매그나칩 반도체 유한회사 이미지센서의 화소어레이 주사 방법
US6407440B1 (en) * 2000-02-25 2002-06-18 Micron Technology Inc. Pixel cell with high storage capacitance for a CMOS imager
EP2290952A3 (de) * 2000-07-27 2011-08-17 Canon Kabushiki Kaisha Bildaufnahmevorrichtung
US6541794B1 (en) 2000-08-31 2003-04-01 Motorola, Inc. Imaging device and method
JP3937716B2 (ja) 2000-10-24 2007-06-27 キヤノン株式会社 固体撮像装置及び撮像システム
JP2002158345A (ja) * 2000-11-22 2002-05-31 Shimadzu Corp 固体撮像素子
US6552323B2 (en) * 2000-12-06 2003-04-22 Eastman Kodak Company Image sensor with a shared output signal line
JP4404241B2 (ja) * 2002-02-12 2010-01-27 ソニー株式会社 固体撮像装置およびその出力方法
JP3792628B2 (ja) * 2002-09-02 2006-07-05 富士通株式会社 固体撮像装置及び画像読み出し方法
JP4109944B2 (ja) * 2002-09-20 2008-07-02 キヤノン株式会社 固体撮像装置の製造方法
JP4323772B2 (ja) * 2002-10-31 2009-09-02 キヤノン株式会社 固体撮像装置、カメラ及びカメラ制御システム
JP3720014B2 (ja) * 2002-11-01 2005-11-24 日本テキサス・インスツルメンツ株式会社 固体撮像装置
JP3988189B2 (ja) * 2002-11-20 2007-10-10 ソニー株式会社 固体撮像装置
JP4499348B2 (ja) * 2002-11-28 2010-07-07 ソニー株式会社 固体撮像装置及びその信号読み出し方法
US7355641B2 (en) * 2003-01-10 2008-04-08 Matsushita Electric Industrial Co., Ltd. Solid state imaging device reading non-adjacent pixels of the same color
US7339216B1 (en) 2003-01-31 2008-03-04 Foveon, Inc. Vertical color filter sensor group array with full-resolution top layer and lower-resolution lower layer
CN100362854C (zh) * 2003-02-13 2008-01-16 松下电器产业株式会社 固体摄像装置、其驱动方法及使用它的照相机
JP3794637B2 (ja) 2003-03-07 2006-07-05 松下電器産業株式会社 固体撮像装置
JP2004349430A (ja) * 2003-05-21 2004-12-09 Sharp Corp 固体撮像素子とその駆動方法
US7859581B2 (en) * 2003-07-15 2010-12-28 Eastman Kodak Company Image sensor with charge binning and dual channel readout
US7443437B2 (en) 2003-11-26 2008-10-28 Micron Technology, Inc. Image sensor with a gated storage node linked to transfer gate
US11282891B2 (en) 2003-11-26 2022-03-22 Samsung Electronics Co., Ltd. Image sensor with a gated storage node linked to transfer gate
US20050128327A1 (en) * 2003-12-10 2005-06-16 Bencuya Selim S. Device and method for image sensing
JP3793202B2 (ja) * 2004-02-02 2006-07-05 キヤノン株式会社 固体撮像装置
US7087883B2 (en) * 2004-02-04 2006-08-08 Omnivision Technologies, Inc. CMOS image sensor using shared transistors between pixels with dual pinned photodiode
JP4230406B2 (ja) * 2004-04-27 2009-02-25 富士通マイクロエレクトロニクス株式会社 固体撮像装置
JP2006005711A (ja) * 2004-06-18 2006-01-05 Iwate Toshiba Electronics Co Ltd Ｃｍｏｓイメージセンサ
JP4971586B2 (ja) * 2004-09-01 2012-07-11 キヤノン株式会社 固体撮像装置
JP2006093263A (ja) * 2004-09-22 2006-04-06 Seiko Epson Corp 固体撮像装置及びその駆動方法
JP4652773B2 (ja) * 2004-11-05 2011-03-16 パナソニック株式会社 増幅型固体撮像装置
KR100674923B1 (ko) * 2004-12-03 2007-01-26 삼성전자주식회사 인접한 화소간에 출력회로를 공유하는 씨모스 이미지 센서
JP2006270890A (ja) * 2005-03-25 2006-10-05 Matsushita Electric Ind Co Ltd 撮像装置、及びデジタルカメラ
JP4768305B2 (ja) * 2005-04-15 2011-09-07 岩手東芝エレクトロニクス株式会社 固体撮像装置
US7446357B2 (en) * 2005-05-11 2008-11-04 Micron Technology, Inc. Split trunk pixel layout
US7830437B2 (en) 2005-05-11 2010-11-09 Aptina Imaging Corp. High fill factor multi-way shared pixel
US7541628B2 (en) * 2005-07-09 2009-06-02 Samsung Electronics Co., Ltd. Image sensors including active pixel sensor arrays
US8139130B2 (en) 2005-07-28 2012-03-20 Omnivision Technologies, Inc. Image sensor with improved light sensitivity
US8274715B2 (en) 2005-07-28 2012-09-25 Omnivision Technologies, Inc. Processing color and panchromatic pixels
US7719040B2 (en) * 2005-08-03 2010-05-18 Panasonic Corporation Solid-state imaging device
US20070040922A1 (en) * 2005-08-22 2007-02-22 Micron Technology, Inc. HDR/AB on multi-way shared pixels
US7244918B2 (en) * 2005-08-30 2007-07-17 Micron Technology, Inc. Method and apparatus providing a two-way shared storage gate on a four-way shared pixel
US7714917B2 (en) * 2005-08-30 2010-05-11 Aptina Imaging Corporation Method and apparatus providing a two-way shared storage gate on a four-way shared pixel
JP4486015B2 (ja) * 2005-09-13 2010-06-23 パナソニック株式会社 固体撮像装置
JP4752447B2 (ja) * 2005-10-21 2011-08-17 ソニー株式会社 固体撮像装置およびカメラ
JP5033808B2 (ja) * 2005-11-22 2012-09-26 フォブオン・インク 完全解像度最上層および低解像度下層を有する垂直カラーフィルターセンサー群
JP4695979B2 (ja) * 2005-12-26 2011-06-08 パナソニック株式会社 固体撮像装置
US7495201B2 (en) * 2006-01-11 2009-02-24 The Board Of Trustees Of The Leland Stanford Junior University Charge multiplexed array of solid-state photosensitive detectors
US7916362B2 (en) 2006-05-22 2011-03-29 Eastman Kodak Company Image sensor with improved light sensitivity
JP4956084B2 (ja) * 2006-08-01 2012-06-20 キヤノン株式会社 光電変換装置及びそれを用いた撮像システム
US7764315B2 (en) * 2006-08-24 2010-07-27 Dalsa Corporation CMOS imaging facility and a modular array for use in such a facility
US8031258B2 (en) 2006-10-04 2011-10-04 Omnivision Technologies, Inc. Providing multiple video signals from single sensor
KR100976886B1 (ko) 2006-12-22 2010-08-18 크로스텍 캐피탈, 엘엘씨 부동 베이스 판독 개념을 갖는 ｃｍｏｓ 이미지 센서
US8031249B2 (en) * 2007-01-11 2011-10-04 Micron Technology, Inc. Missing pixel architecture
EP1971088A1 (de) * 2007-03-12 2008-09-17 Nokia Corporation Ressourcenfreigabe in einem Kommunikationssystem
WO2008133145A1 (ja) * 2007-04-18 2008-11-06 Rosnes Corporation 固体撮像装置
US20080258187A1 (en) * 2007-04-18 2008-10-23 Ladd John W Methods, systems and apparatuses for the design and use of imager sensors
EP2192615A4 (de) * 2007-09-05 2011-07-27 Univ Tohoku Festkörper-bildgeberbauelement und verfahren zu seiner herstellung
US7999870B2 (en) * 2008-02-01 2011-08-16 Omnivision Technologies, Inc. Sampling and readout of an image sensor having a sparse color filter array pattern
US8077236B2 (en) 2008-03-20 2011-12-13 Aptina Imaging Corporation Method and apparatus providing reduced metal routing in imagers
US8158988B2 (en) * 2008-06-05 2012-04-17 International Business Machines Corporation Interlevel conductive light shield
US8709855B2 (en) * 2008-06-05 2014-04-29 International Business Machines Corporation Intralevel conductive light shield
JP2010016056A (ja) * 2008-07-01 2010-01-21 Canon Inc 光電変換装置
JP5058090B2 (ja) * 2008-07-18 2012-10-24 株式会社東芝 固体撮像装置
JP5506683B2 (ja) * 2008-08-11 2014-05-28 本田技研工業株式会社 画素、画素の製造方法、撮像装置および画像形成方法
US8350939B2 (en) 2008-10-01 2013-01-08 Micron Technology, Inc. Vertical 4-way shared pixel in a single column with internal reset and no row select
JP5374110B2 (ja) 2008-10-22 2013-12-25 キヤノン株式会社 撮像センサ及び撮像装置
GB2466213B (en) * 2008-12-12 2013-03-06 Cmosis Nv Pixel array with shared readout circuitry
KR20100078103A (ko) * 2008-12-30 2010-07-08 주식회사 동부하이텍 이미지 센서 및 그 제조 방법
JP5029624B2 (ja) * 2009-01-15 2012-09-19 ソニー株式会社 固体撮像装置及び電子機器
FR2941327B1 (fr) * 2009-01-22 2012-05-04 St Microelectronics Sa Dispositif de saisie d'images comprenant des moyens de rassemblement de pixels.
JPWO2010090166A1 (ja) * 2009-02-04 2012-08-09 株式会社 Ｒｏｓｎｅｓ 固体撮像装置
WO2010090167A1 (ja) 2009-02-04 2010-08-12 株式会社 Ｒｏｓｎｅｓ 固体撮像装置
JP2010199450A (ja) * 2009-02-27 2010-09-09 Sony Corp 固体撮像装置の製造方法、固体撮像装置および電子機器
JP5230552B2 (ja) * 2009-07-13 2013-07-10 キヤノン株式会社 固体撮像装置及びその駆動方法
US8130304B2 (en) * 2009-07-24 2012-03-06 Aptina Imaging Corporation Image sensors with pixel charge summing
BR112012012809A2 (pt) * 2009-11-30 2016-08-16 Sharp Kk dispositivo de apresentação visual
JP2011114324A (ja) 2009-11-30 2011-06-09 Sony Corp 固体撮像装置及び電子機器
US8263922B2 (en) * 2009-12-15 2012-09-11 Himax Imaging, Inc. Image sensor
JP5526928B2 (ja) * 2010-03-30 2014-06-18 ソニー株式会社 固体撮像装置および撮像装置
JP5644177B2 (ja) 2010-05-07 2014-12-24 ソニー株式会社 固体撮像装置、および、その製造方法、電子機器
JP5633323B2 (ja) * 2010-11-11 2014-12-03 ソニー株式会社 固体撮像装置及び電子機器
JP5659759B2 (ja) * 2010-12-10 2015-01-28 セイコーエプソン株式会社 固体撮像装置
US9052497B2 (en) 2011-03-10 2015-06-09 King Abdulaziz City For Science And Technology Computing imaging data using intensity correlation interferometry
US9099214B2 (en) 2011-04-19 2015-08-04 King Abdulaziz City For Science And Technology Controlling microparticles through a light field having controllable intensity and periodicity of maxima thereof
CN103650476B (zh) 2011-05-12 2018-05-01 德普伊辛迪斯制品公司 对具有最小纵向互连的混合图像传感器使用堆叠方案的像素阵列区域最优化
US8817153B2 (en) 2011-07-25 2014-08-26 Aptina Imaging Corporation Column parallel readout image sensors with shared column analog-to-digital converter circuitry
JP2013038174A (ja) 2011-08-05 2013-02-21 Canon Inc 軟ｘ線検出装置、及び軟ｘ線検出システム
JP2013055499A (ja) * 2011-09-02 2013-03-21 Sony Corp 固体撮像素子およびカメラシステム
JP2013055500A (ja) * 2011-09-02 2013-03-21 Sony Corp 固体撮像素子およびカメラシステム
JP5850680B2 (ja) * 2011-09-09 2016-02-03 キヤノン株式会社 撮像装置及びその制御方法
JP5963450B2 (ja) * 2012-01-18 2016-08-03 キヤノン株式会社 撮像装置および撮像システム
EP3490247B1 (de) * 2012-03-30 2022-09-07 Nikon Corporation Bildaufnahmeeinheit und bildaufnahmevorrichtung
US9618635B2 (en) * 2012-06-21 2017-04-11 Honeywell International Inc. Integrated radiation sensitive circuit
IN2015MN00022A (de) 2012-07-26 2015-10-16 Olive Medical Corp
MX356890B (es) 2012-07-26 2018-06-19 Depuy Synthes Products Inc Video continuo en un entorno deficiente de luz.
BR112015001369A2 (pt) 2012-07-26 2017-07-04 Olive Medical Corp sistema de câmera com sensor de imagem cmos monolítico de área mínima
US10251530B2 (en) 2013-03-15 2019-04-09 DePuy Synthes Products, Inc. Scope sensing in a light controlled environment
US10517469B2 (en) 2013-03-15 2019-12-31 DePuy Synthes Products, Inc. Image sensor synchronization without input clock and data transmission clock
CA2906975A1 (en) 2013-03-15 2014-09-18 Olive Medical Corporation Minimize image sensor i/o and conductor counts in endoscope applications
JP2016519591A (ja) 2013-03-15 2016-07-07 オリーブ・メディカル・コーポレイションＯｌｉｖｅ Ｍｅｄｉｃａｌ Ｃｏｒｐｏｒａｔｉｏｎ パルスカラー撮像システムにおける超解像度及び色運動アーチファクト補正
EP2967300A4 (de) 2013-03-15 2016-11-23 Olive Medical Corp Steuerung der integrierten lichtenergie eines laserpulses
CN105263393B (zh) 2013-03-15 2018-10-26 德普伊新特斯产品公司 与成角度的内窥镜一起使用的带有整合式棱镜的观察套管针
US9402041B2 (en) 2013-07-11 2016-07-26 Canon Kabushiki Kaisha Solid-state image sensor and imaging apparatus using same
CN114191114A (zh) 2014-03-21 2022-03-18 德普伊新特斯产品公司 用于成像传感器的卡缘连接器
CN104061908B (zh) * 2014-06-13 2016-06-01 北京空间机电研究所 一种红外遥感器背景电平漂移消除系统及其方法
JP2016111425A (ja) * 2014-12-03 2016-06-20 ルネサスエレクトロニクス株式会社 撮像装置
US9774801B2 (en) * 2014-12-05 2017-09-26 Qualcomm Incorporated Solid state image sensor with enhanced charge capacity and dynamic range
US9787928B2 (en) * 2015-01-06 2017-10-10 Forza Silicon Corporation Layout and timing schemes for ping-pong readout architecture
TWI565323B (zh) * 2015-09-02 2017-01-01 原相科技股份有限公司 分辨前景的成像裝置及其運作方法、以及影像感測器
KR102524400B1 (ko) * 2016-07-04 2023-04-24 에스케이하이닉스 주식회사 하나의 컬러 필터 및 하나의 마이크로렌즈를 공유하는 다수 개의 포토다이오드들을 갖는 이미지 센서
RU2657455C1 (ru) * 2017-09-14 2018-06-14 Вячеслав Михайлович Смелков Способ формирования видеосигнала в "кольцевом" фотоприёмнике и сервере для компьютерной системы панорамного наблюдения в условиях сложной освещённости и/или сложной яркости объектов
US11438486B2 (en) 2019-08-26 2022-09-06 Qualcomm Incorporated 3D active depth sensing with laser pulse train bursts and a gated sensor
KR20220060297A (ko) * 2020-11-04 2022-05-11 에스케이하이닉스 주식회사 이미지 센싱 장치

Family Cites Families (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2501943B1 (fr) 1981-03-13 1986-01-17 Thomson Csf Dispositif photosensible solide a deux dimensions et dispositif d'analyse d'image, utilisant le transfert de charges electriques, comportant un tel dispositif
JPS5885690A (ja) * 1981-11-18 1983-05-23 Hitachi Ltd 固体カラ−撮像装置
US4985758A (en) 1982-12-07 1991-01-15 Canon Kabushiki Kaisha Signal processing system having selected output from plural readout devices
JPS60167580A (ja) 1984-02-10 1985-08-30 Hitachi Ltd 固体撮像装置
JPH0824351B2 (ja) * 1984-04-27 1996-03-06 オリンパス光学工業株式会社 固体撮像装置
CA1269446A (en) 1984-12-28 1990-05-22 Seiji Hashimoto Image sensing apparatus
US4870495A (en) 1985-02-22 1989-09-26 Canon Kabushiki Kaisha Image sensing element and image sensing apparatus for recording a still image
JPS6215991A (ja) * 1985-07-15 1987-01-24 Hitachi Ltd 固体撮像装置
US4914519A (en) 1986-09-19 1990-04-03 Canon Kabushiki Kaisha Apparatus for eliminating noise in a solid-state image pickup device
US5220170A (en) * 1985-12-11 1993-06-15 General Imaging Corporation X-ray imaging system and solid state detector therefor
US5464984A (en) * 1985-12-11 1995-11-07 General Imaging Corporation X-ray imaging system and solid state detector therefor
JPS63100879A (ja) 1986-10-17 1988-05-02 Hitachi Ltd 固体撮像装置
EP0272152B1 (de) 1986-12-18 1994-08-03 Canon Kabushiki Kaisha Signalausleseschaltung
DE3887547T2 (de) 1987-03-20 1994-08-25 Canon Kk Abbildungsgerät.
JPS63245073A (ja) 1987-03-31 1988-10-12 Canon Inc 撮像装置
JPS6410665A (en) * 1987-07-03 1989-01-13 Sony Corp Solid-state image sensing device
DE3889603T2 (de) 1987-08-05 1994-09-15 Canon Kk Photoelektrisches Umwandlungsgerät.
US5262850A (en) 1988-09-20 1993-11-16 Canon Kabushiki Kaisha Photoelectric converting device having reduced line sensor space
US5162912A (en) 1989-04-10 1992-11-10 Canon Kabushiki Kaisha Photoelectric conversion apparatus eliminating noise in an output signal
US5315412A (en) 1990-04-06 1994-05-24 Canon Kabushiki Kaisha Multi-chip color image sensor with light-receiving windows arranged to provide sensor output signals corresponding to the gap between adjacent sensors
JPH0488781A (ja) 1990-07-31 1992-03-23 Canon Inc 撮像素子
US5288988A (en) 1990-08-07 1994-02-22 Canon Kabushiki Kaisha Photoconversion device having reset control circuitry
JPH05122440A (ja) 1991-10-25 1993-05-18 Fuji Xerox Co Ltd ２次元密着型イメージセンサ
JPH05243543A (ja) 1992-02-26 1993-09-21 Nikon Corp 固体撮像装置
JPH06204450A (ja) 1992-12-28 1994-07-22 Toshiba Corp 固体撮像装置
JPH0730084A (ja) 1993-07-14 1995-01-31 Fuji Xerox Co Ltd ２次元密着型イメージセンサ
JP2541470B2 (ja) * 1993-08-26 1996-10-09 日本電気株式会社 固体撮像素子
US6021172A (en) * 1994-01-28 2000-02-01 California Institute Of Technology Active pixel sensor having intra-pixel charge transfer with analog-to-digital converter
US5461425A (en) 1994-02-15 1995-10-24 Stanford University CMOS image sensor with pixel level A/D conversion
GB9505305D0 (en) * 1995-03-16 1995-05-03 Philips Electronics Uk Ltd Electronic devices comprising an array
JP3031606B2 (ja) * 1995-08-02 2000-04-10 キヤノン株式会社 固体撮像装置と画像撮像装置
EP0845900B1 (de) 1995-08-11 2002-11-06 Kabushiki Kaisha Toshiba Bildaufnahmesystem, integrierte festkörperbildaufnahmehalbleiterschaltung
JP3381127B2 (ja) 1995-08-21 2003-02-24 ソニー株式会社 固体撮像装置
JP3774499B2 (ja) 1996-01-24 2006-05-17 キヤノン株式会社 光電変換装置
JP3481782B2 (ja) 1996-07-16 2003-12-22 株式会社東芝 固体撮像装置
JP3724882B2 (ja) * 1996-08-14 2005-12-07 シャープ株式会社 カラー固体撮像装置
JP4054094B2 (ja) * 1996-12-27 2008-02-27 オリンパス株式会社 電子内視鏡
US6160281A (en) 1997-02-28 2000-12-12 Eastman Kodak Company Active pixel sensor with inter-pixel function sharing
JP3758284B2 (ja) * 1997-03-17 2006-03-22 コニカミノルタフォトイメージング株式会社 画像撮像装置
US6107655A (en) * 1997-08-15 2000-08-22 Eastman Kodak Company Active pixel image sensor with shared amplifier read-out
JP3496918B2 (ja) 1997-12-26 2004-02-16 キヤノン株式会社 固体撮像装置
US6466266B1 (en) * 1998-07-28 2002-10-15 Eastman Kodak Company Active pixel sensor with shared row timing signals
US6657665B1 (en) * 1998-12-31 2003-12-02 Eastman Kodak Company Active Pixel Sensor with wired floating diffusions and shared amplifier
JP5122440B2 (ja) 2005-04-15 2013-01-16 ユーティーシー パワー コーポレイション 氷点下での起動時に冷却および加湿をするための燃料電池セルスタック内での水の保持
DE102007042440B3 (de) 2007-09-06 2009-01-29 Siemens Ag Verfahren zur rechnergestützten Steuerung und/oder Regelung eines technischen Systems

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US8614757B2 (en) 2013-12-24
US20050248675A1 (en) 2005-11-10
US8836834B2 (en) 2014-09-16
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EP1995785A1 (de) 2008-11-26
US9123610B2 (en) 2015-09-01
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