JP5058090B2 - 固体撮像装置 - Google Patents
固体撮像装置 Download PDFInfo
- Publication number
- JP5058090B2 JP5058090B2 JP2008187190A JP2008187190A JP5058090B2 JP 5058090 B2 JP5058090 B2 JP 5058090B2 JP 2008187190 A JP2008187190 A JP 2008187190A JP 2008187190 A JP2008187190 A JP 2008187190A JP 5058090 B2 JP5058090 B2 JP 5058090B2
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- JP
- Japan
- Prior art keywords
- diffusion layer
- read
- photodiodes
- solid
- state imaging
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- 238000003384 imaging method Methods 0.000 title claims description 31
- 238000009792 diffusion process Methods 0.000 claims description 26
- 238000006243 chemical reaction Methods 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 5
- 239000011159 matrix material Substances 0.000 claims description 3
- 239000012535 impurity Substances 0.000 claims description 2
- 230000003321 amplification Effects 0.000 description 14
- 238000003199 nucleic acid amplification method Methods 0.000 description 14
- 238000010586 diagram Methods 0.000 description 8
- 238000009825 accumulation Methods 0.000 description 6
- 229920006395 saturated elastomer Polymers 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 4
Images
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
- H04N25/46—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by combining or binning pixels
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/766—Addressed sensors, e.g. MOS or CMOS sensors comprising control or output lines used for a plurality of functions, e.g. for pixel output, driving, reset or power
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
- H04N25/778—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Solid State Image Pick-Up Elements (AREA)
Description
本発明の固体撮像装置は、半導体基板上に撮像領域およびそれを駆動するための駆動回路領域などを備える。撮像領域は、フォトダイオードを用いた光電変換部を行列状に配置し、この光電変換部から撮像信号を読出すための読み出し回路を含む。
Claims (3)
- 半導体基板上にフォトダイオードを用いた光電変換部を行列状に配置し、前記光電変換部から撮像信号を読出すための読み出し回路を含む撮像領域を備える固体撮像装置において、
行方向に隣り合う2つの画素および列方向に隣り合う2つの画素に対応する4つのフォトダイオードおよび前記各フォトダイオードに対応して配置された読出しトランジスタで1つの浮遊拡散層と1つの読み出し回路を共有し、前記4つの読出しトランジスタの各ゲートにはそれぞれ独立の制御パルスが印加されるように読出し線が配置されており、
同一行に配置されたフォトダイオードからの読出し信号は撮像走査の1つの水平ブランキング期間内で互いに独立に垂直信号線に読み出され、
前記4つのフォトダイオードおよび4つの読出しトランジスタは列方向に配置された1つの垂直信号線を共有し、当該垂直信号線と電源ノードとに間に信号出力用のMOS トランジスタが接続されており、当該MOS トランジスタのゲートには前記4つの読出しトランジスタの各一端ノードが共通に接続され、
前記1つの垂直信号線に2つの選択回路が共通に接続されており、当該2つの選択回路は撮像走査の1つの水平ブランキング期間内で切り換え選択されることを特徴とする固体撮像装置。 - 前記読み出し回路は、電源ノードに印加されたパルス電位をリセットゲートを介して前記浮遊拡散層に導入することにより非選択行の浮遊拡散層電位を制御するように構成されており、行選択トランジスタを配置しないで行選択を行うことを特徴とする請求項1記載の固体撮像装置。
- 前記浮遊拡散層は、前記半導体基板の1つの活性領域内に一体で形成された不純物拡散層により成ることを特徴とする請求項1記載の固体撮像装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008187190A JP5058090B2 (ja) | 2008-07-18 | 2008-07-18 | 固体撮像装置 |
TW098123898A TWI396278B (zh) | 2008-07-18 | 2009-07-15 | 固態攝影裝置 |
US12/504,136 US8319873B2 (en) | 2008-07-18 | 2009-07-16 | Solid-state imaging device |
CN200910160728XA CN101631206B (zh) | 2008-07-18 | 2009-07-17 | 固体成像装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008187190A JP5058090B2 (ja) | 2008-07-18 | 2008-07-18 | 固体撮像装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010028434A JP2010028434A (ja) | 2010-02-04 |
JP5058090B2 true JP5058090B2 (ja) | 2012-10-24 |
Family
ID=41529525
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008187190A Expired - Fee Related JP5058090B2 (ja) | 2008-07-18 | 2008-07-18 | 固体撮像装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8319873B2 (ja) |
JP (1) | JP5058090B2 (ja) |
CN (1) | CN101631206B (ja) |
TW (1) | TWI396278B (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI463869B (zh) * | 2010-11-12 | 2014-12-01 | Himax Imagimg Inc | 感測畫素陣列及感測裝置 |
JP5755111B2 (ja) * | 2011-11-14 | 2015-07-29 | キヤノン株式会社 | 撮像装置の駆動方法 |
KR102170627B1 (ko) | 2014-01-08 | 2020-10-27 | 삼성전자주식회사 | 이미지 센서 |
CN107251545B (zh) * | 2015-01-28 | 2020-03-03 | 松下知识产权经营株式会社 | 固体摄像装置以及照相机 |
WO2017056536A1 (ja) * | 2015-09-30 | 2017-04-06 | オリンパス株式会社 | 撮像素子および内視鏡 |
CN110378320A (zh) * | 2019-08-07 | 2019-10-25 | 华泰证券股份有限公司 | 多个信号的共同周期确定方法、装置和可读存储介质 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6107655A (en) * | 1997-08-15 | 2000-08-22 | Eastman Kodak Company | Active pixel image sensor with shared amplifier read-out |
JP3854720B2 (ja) * | 1998-05-20 | 2006-12-06 | キヤノン株式会社 | 撮像装置及びそれを用いた撮像システム |
US6977684B1 (en) * | 1998-04-30 | 2005-12-20 | Canon Kabushiki Kaisha | Arrangement of circuits in pixels, each circuit shared by a plurality of pixels, in image sensing apparatus |
JP3697073B2 (ja) * | 1998-08-05 | 2005-09-21 | キヤノン株式会社 | 撮像装置及びそれを用いた撮像システム |
US6956605B1 (en) * | 1998-08-05 | 2005-10-18 | Canon Kabushiki Kaisha | Image pickup apparatus |
JP4248256B2 (ja) | 2003-01-07 | 2009-04-02 | パナソニック株式会社 | 固体撮像装置 |
JP3916612B2 (ja) * | 2003-02-13 | 2007-05-16 | 松下電器産業株式会社 | 固体撮像装置、その駆動方法及びそれを用いたカメラ |
US7436010B2 (en) | 2003-02-13 | 2008-10-14 | Matsushita Electric Industrial Co., Ltd. | Solid state imaging apparatus, method for driving the same and camera using the same |
US7989749B2 (en) * | 2007-10-05 | 2011-08-02 | Aptina Imaging Corporation | Method and apparatus providing shared pixel architecture |
US7619197B2 (en) * | 2008-02-04 | 2009-11-17 | Carestream Health, Inc. | Digital radiographic imaging apparatus |
-
2008
- 2008-07-18 JP JP2008187190A patent/JP5058090B2/ja not_active Expired - Fee Related
-
2009
- 2009-07-15 TW TW098123898A patent/TWI396278B/zh not_active IP Right Cessation
- 2009-07-16 US US12/504,136 patent/US8319873B2/en not_active Expired - Fee Related
- 2009-07-17 CN CN200910160728XA patent/CN101631206B/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US8319873B2 (en) | 2012-11-27 |
TW201012211A (en) | 2010-03-16 |
CN101631206B (zh) | 2012-05-30 |
US20100012993A1 (en) | 2010-01-21 |
TWI396278B (zh) | 2013-05-11 |
JP2010028434A (ja) | 2010-02-04 |
CN101631206A (zh) | 2010-01-20 |
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