DE69937803D1 - Verfahren zur herstellung eines czochralski silizium wafers ohne sauerstoffniederschlag - Google Patents
Verfahren zur herstellung eines czochralski silizium wafers ohne sauerstoffniederschlagInfo
- Publication number
- DE69937803D1 DE69937803D1 DE69937803T DE69937803T DE69937803D1 DE 69937803 D1 DE69937803 D1 DE 69937803D1 DE 69937803 T DE69937803 T DE 69937803T DE 69937803 T DE69937803 T DE 69937803T DE 69937803 D1 DE69937803 D1 DE 69937803D1
- Authority
- DE
- Germany
- Prior art keywords
- producing
- silicon wafers
- czochralski silicon
- oxygen substrate
- oxygen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 229910052760 oxygen Inorganic materials 0.000 title 1
- 239000001301 oxygen Substances 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
- 235000012431 wafers Nutrition 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/206—Controlling or regulating the thermal history of growing the ingot
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
- H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
- H01L21/3225—Thermally inducing defects using oxygen present in the silicon body for intrinsic gettering
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US379383 | 1995-01-27 | ||
US9882298P | 1998-09-02 | 1998-09-02 | |
US98822P | 1998-09-02 | ||
US09/379,383 US6336968B1 (en) | 1998-09-02 | 1999-08-23 | Non-oxygen precipitating czochralski silicon wafers |
PCT/US1999/019301 WO2000014776A2 (en) | 1998-09-02 | 1999-08-25 | Non-oxygen precipitating czochralski silicon wafers |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69937803D1 true DE69937803D1 (de) | 2008-01-31 |
DE69937803T2 DE69937803T2 (de) | 2008-12-04 |
Family
ID=26795148
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69937803T Expired - Lifetime DE69937803T2 (de) | 1998-09-02 | 1999-08-25 | Verfahren zur herstellung eines czochralski silizium wafers ohne sauerstoffniederschlag |
Country Status (7)
Country | Link |
---|---|
US (3) | US6336968B1 (de) |
EP (2) | EP1114441B1 (de) |
JP (2) | JP2003524874A (de) |
KR (1) | KR100770190B1 (de) |
CN (1) | CN1181523C (de) |
DE (1) | DE69937803T2 (de) |
WO (1) | WO2000014776A2 (de) |
Families Citing this family (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5994761A (en) * | 1997-02-26 | 1999-11-30 | Memc Electronic Materials Spa | Ideal oxygen precipitating silicon wafers and oxygen out-diffusion-less process therefor |
US6336968B1 (en) * | 1998-09-02 | 2002-01-08 | Memc Electronic Materials, Inc. | Non-oxygen precipitating czochralski silicon wafers |
JP2002524845A (ja) * | 1998-09-02 | 2002-08-06 | エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド | 欠陥密度が低い単結晶シリコンから得られるシリコン・オン・インシュレーター構造体 |
DE60010496T2 (de) * | 1999-09-23 | 2005-04-07 | Memc Electronic Materials, Inc. | Czochralski-Verfahren zur Herstellung Silizium-Einkristalle durch Steuerung der Abkühlgeschwindigkeit |
JP2002043318A (ja) * | 2000-07-28 | 2002-02-08 | Shin Etsu Handotai Co Ltd | シリコン単結晶ウエーハの製造方法 |
US6986925B2 (en) * | 2001-01-02 | 2006-01-17 | Memc Electronic Materials, Inc. | Single crystal silicon having improved gate oxide integrity |
EP2295619B1 (de) | 2001-01-26 | 2014-04-23 | MEMC Electronic Materials, Inc. | Verfahren zur Herstellung von Silizium mit niedriger Defektdichte und mit leerstellendominiertem Kern, der im wesentlichen frei von oxidationsinduzierten Stapelfehlern ist |
WO2002084728A1 (en) * | 2001-04-11 | 2002-10-24 | Memc Electronic Materials, Inc. | Control of thermal donor formation in high resistivity cz silicon |
DE10205084B4 (de) * | 2002-02-07 | 2008-10-16 | Siltronic Ag | Verfahren zur thermischen Behandlung einer Siliciumscheibe sowie dadurch hergestellte Siliciumscheibe |
KR100745309B1 (ko) * | 2002-04-10 | 2007-08-01 | 엠이엠씨 일렉트로닉 머티리얼즈 인코포레이티드 | 이상적인 산소 침전 실리콘 웨이퍼에서 디누드 구역깊이를 조절하기 위한 방법 |
KR20040007025A (ko) * | 2002-07-16 | 2004-01-24 | 주식회사 하이닉스반도체 | 반도체 웨이퍼 제조 방법 |
WO2004073057A1 (ja) * | 2003-02-14 | 2004-08-26 | Sumitomo Mitsubishi Silicon Corporation | シリコンウェーハの製造方法 |
KR100531552B1 (ko) * | 2003-09-05 | 2005-11-28 | 주식회사 하이닉스반도체 | 실리콘 웨이퍼 및 그 제조방법 |
EP1882057A2 (de) * | 2005-05-19 | 2008-01-30 | MEMC Electronic Materials, Inc. | Siliciumstruktur mit hohem widerstand und herstellungsverfahren dafür |
US7485928B2 (en) * | 2005-11-09 | 2009-02-03 | Memc Electronic Materials, Inc. | Arsenic and phosphorus doped silicon wafer substrates having intrinsic gettering |
US20090004426A1 (en) * | 2007-06-29 | 2009-01-01 | Memc Electronic Materials, Inc. | Suppression of Oxygen Precipitation in Heavily Doped Single Crystal Silicon Substrates |
US20090004458A1 (en) * | 2007-06-29 | 2009-01-01 | Memc Electronic Materials, Inc. | Diffusion Control in Heavily Doped Substrates |
EP2412849B1 (de) | 2009-03-25 | 2016-03-23 | SUMCO Corporation | Siliciumwafer und herstellungsverfahren dafür |
JP5515406B2 (ja) * | 2009-05-15 | 2014-06-11 | 株式会社Sumco | シリコンウェーハおよびその製造方法 |
DE102010034002B4 (de) | 2010-08-11 | 2013-02-21 | Siltronic Ag | Siliciumscheibe und Verfahren zu deren Herstellung |
CN102605433A (zh) * | 2012-01-09 | 2012-07-25 | 浙江大学 | 一种消除掺氮直拉单晶硅片中原生氧沉淀的方法 |
US9129919B2 (en) | 2012-11-19 | 2015-09-08 | Sunedison Semiconductor Limited | Production of high precipitate density wafers by activation of inactive oxygen precipitate nuclei |
JP6260100B2 (ja) * | 2013-04-03 | 2018-01-17 | 株式会社Sumco | エピタキシャルシリコンウェーハの製造方法 |
KR101472349B1 (ko) * | 2013-05-21 | 2014-12-12 | 주식회사 엘지실트론 | 반도체용 실리콘 단결정 잉곳 및 웨이퍼 |
US20150118861A1 (en) * | 2013-10-28 | 2015-04-30 | Texas Instruments Incorporated | Czochralski substrates having reduced oxygen donors |
JP5811218B2 (ja) * | 2014-03-18 | 2015-11-11 | 株式会社Sumco | シリコンエピタキシャルウェーハの製造方法 |
JP5938113B1 (ja) * | 2015-01-05 | 2016-06-22 | 信越化学工業株式会社 | 太陽電池用基板の製造方法 |
CN105470129B (zh) * | 2015-12-01 | 2018-10-16 | 北京北方华创微电子装备有限公司 | 一种消除氧热施主对少子扩散长度影响的方法 |
WO2018087794A1 (ja) | 2016-11-14 | 2018-05-17 | 信越化学工業株式会社 | 高光電変換効率太陽電池の製造方法及び高光電変換効率太陽電池 |
US11695048B2 (en) | 2020-04-09 | 2023-07-04 | Sumco Corporation | Silicon wafer and manufacturing method of the same |
CN114280072B (zh) * | 2021-12-23 | 2023-06-20 | 宁夏中欣晶圆半导体科技有限公司 | 单晶硅体内bmd的检测方法 |
Family Cites Families (41)
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JPS583375B2 (ja) | 1979-01-19 | 1983-01-21 | 超エル・エス・アイ技術研究組合 | シリコン単結晶ウエハ−の製造方法 |
JPS5680139A (en) | 1979-12-05 | 1981-07-01 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Manufacture of semiconductor device |
US4437922A (en) | 1982-03-26 | 1984-03-20 | International Business Machines Corporation | Method for tailoring oxygen precipitate particle density and distribution silicon wafers |
US4548654A (en) | 1983-06-03 | 1985-10-22 | Motorola, Inc. | Surface denuding of silicon wafer |
US4505759A (en) | 1983-12-19 | 1985-03-19 | Mara William C O | Method for making a conductive silicon substrate by heat treatment of oxygenated and lightly doped silicon single crystals |
US4868133A (en) | 1988-02-11 | 1989-09-19 | Dns Electronic Materials, Inc. | Semiconductor wafer fabrication with improved control of internal gettering sites using RTA |
US4851358A (en) | 1988-02-11 | 1989-07-25 | Dns Electronic Materials, Inc. | Semiconductor wafer fabrication with improved control of internal gettering sites using rapid thermal annealing |
JPH039078A (ja) | 1989-06-05 | 1991-01-16 | Komatsu Ltd | 斜板式ピストンモータ |
IT1242014B (it) | 1990-11-15 | 1994-02-02 | Memc Electronic Materials | Procedimento per il trattamento di fette di silicio per ottenere in esse profili di precipitazione controllati per la produzione di componenti elettronici. |
JP2613498B2 (ja) | 1991-03-15 | 1997-05-28 | 信越半導体株式会社 | Si単結晶ウエーハの熱処理方法 |
JP2758093B2 (ja) | 1991-10-07 | 1998-05-25 | 信越半導体株式会社 | 半導体ウェーハの製造方法 |
JP2726583B2 (ja) | 1991-11-18 | 1998-03-11 | 三菱マテリアルシリコン株式会社 | 半導体基板 |
JPH05155700A (ja) | 1991-12-04 | 1993-06-22 | Nippon Steel Corp | 積層欠陥発生核を有するゲッタリングウエハの製造方法および同方法により製造されたシリコンウエハ |
JPH0684925A (ja) | 1992-07-17 | 1994-03-25 | Toshiba Corp | 半導体基板およびその処理方法 |
KR0139730B1 (ko) * | 1993-02-23 | 1998-06-01 | 사또오 후미오 | 반도체 기판 및 그 제조방법 |
US5401669A (en) | 1993-05-13 | 1995-03-28 | Memc Electronic Materials, Spa | Process for the preparation of silicon wafers having controlled distribution of oxygen precipitate nucleation centers |
JPH0786289A (ja) | 1993-07-22 | 1995-03-31 | Toshiba Corp | 半導体シリコンウェハおよびその製造方法 |
JP2725586B2 (ja) | 1993-12-30 | 1998-03-11 | 日本電気株式会社 | シリコン基板の製造方法 |
US5445975A (en) | 1994-03-07 | 1995-08-29 | Advanced Micro Devices, Inc. | Semiconductor wafer with enhanced pre-process denudation and process-induced gettering |
JP2895743B2 (ja) | 1994-03-25 | 1999-05-24 | 信越半導体株式会社 | Soi基板の製造方法 |
JPH07321120A (ja) | 1994-05-25 | 1995-12-08 | Komatsu Electron Metals Co Ltd | シリコンウェーハの熱処理方法 |
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JPH0845944A (ja) | 1994-07-29 | 1996-02-16 | Sumitomo Sitix Corp | シリコンウェーハの製造方法 |
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JPH0845947A (ja) | 1994-08-03 | 1996-02-16 | Nippon Steel Corp | シリコン基板の熱処理方法 |
JP3285111B2 (ja) | 1994-12-05 | 2002-05-27 | 信越半導体株式会社 | 結晶欠陥の少ないシリコン単結晶の製造方法 |
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US5788763A (en) | 1995-03-09 | 1998-08-04 | Toshiba Ceramics Co., Ltd. | Manufacturing method of a silicon wafer having a controlled BMD concentration |
US5593494A (en) * | 1995-03-14 | 1997-01-14 | Memc Electronic Materials, Inc. | Precision controlled precipitation of oxygen in silicon |
JP3085146B2 (ja) | 1995-05-31 | 2000-09-04 | 住友金属工業株式会社 | シリコン単結晶ウェーハおよびその製造方法 |
JP3381816B2 (ja) | 1996-01-17 | 2003-03-04 | 三菱住友シリコン株式会社 | 半導体基板の製造方法 |
KR100240023B1 (ko) | 1996-11-29 | 2000-01-15 | 윤종용 | 반도체 웨이퍼 열처리방법 및 이에 따라 형성된 반도체 웨이퍼 |
US6045610A (en) * | 1997-02-13 | 2000-04-04 | Samsung Electronics Co., Ltd. | Methods of manufacturing monocrystalline silicon ingots and wafers by controlling pull rate profiles in a hot zone furnance |
DE19707514C2 (de) | 1997-02-25 | 2002-09-26 | Eupec Gmbh & Co Kg | Halbleitermodul |
US5994761A (en) * | 1997-02-26 | 1999-11-30 | Memc Electronic Materials Spa | Ideal oxygen precipitating silicon wafers and oxygen out-diffusion-less process therefor |
DE69841714D1 (de) | 1997-04-09 | 2010-07-22 | Memc Electronic Materials | Silicium mit niedriger Fehlerdichte und idealem Sauerstoffniederschlag |
JP3144631B2 (ja) | 1997-08-08 | 2001-03-12 | 住友金属工業株式会社 | シリコン半導体基板の熱処理方法 |
TW429478B (en) | 1997-08-29 | 2001-04-11 | Toshiba Corp | Semiconductor device and method for manufacturing the same |
JP3346249B2 (ja) | 1997-10-30 | 2002-11-18 | 信越半導体株式会社 | シリコンウエーハの熱処理方法及びシリコンウエーハ |
JPH11150119A (ja) | 1997-11-14 | 1999-06-02 | Sumitomo Sitix Corp | シリコン半導体基板の熱処理方法とその装置 |
US6336968B1 (en) * | 1998-09-02 | 2002-01-08 | Memc Electronic Materials, Inc. | Non-oxygen precipitating czochralski silicon wafers |
-
1999
- 1999-08-23 US US09/379,383 patent/US6336968B1/en not_active Expired - Lifetime
- 1999-08-25 DE DE69937803T patent/DE69937803T2/de not_active Expired - Lifetime
- 1999-08-25 WO PCT/US1999/019301 patent/WO2000014776A2/en active IP Right Grant
- 1999-08-25 KR KR1020017002599A patent/KR100770190B1/ko not_active IP Right Cessation
- 1999-08-25 JP JP2000569427A patent/JP2003524874A/ja active Pending
- 1999-08-25 EP EP99945173A patent/EP1114441B1/de not_active Expired - Lifetime
- 1999-08-25 CN CNB998106070A patent/CN1181523C/zh not_active Expired - Fee Related
- 1999-08-25 EP EP10179080.6A patent/EP2261958B1/de not_active Expired - Lifetime
-
2001
- 2001-08-14 US US09/929,585 patent/US6432197B2/en not_active Expired - Lifetime
-
2002
- 2002-08-13 US US10/217,703 patent/US6709511B2/en not_active Expired - Lifetime
-
2008
- 2008-12-10 JP JP2008314569A patent/JP4448547B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US6336968B1 (en) | 2002-01-08 |
KR20010073067A (ko) | 2001-07-31 |
CN1319253A (zh) | 2001-10-24 |
EP2261958B1 (de) | 2013-04-24 |
WO2000014776A2 (en) | 2000-03-16 |
KR100770190B1 (ko) | 2007-10-25 |
DE69937803T2 (de) | 2008-12-04 |
US6709511B2 (en) | 2004-03-23 |
JP2003524874A (ja) | 2003-08-19 |
WO2000014776A3 (en) | 2000-08-24 |
CN1181523C (zh) | 2004-12-22 |
JP4448547B2 (ja) | 2010-04-14 |
EP2261958A3 (de) | 2010-12-22 |
US20020000185A1 (en) | 2002-01-03 |
EP2261958A2 (de) | 2010-12-15 |
EP1114441B1 (de) | 2007-12-19 |
EP1114441A2 (de) | 2001-07-11 |
US6432197B2 (en) | 2002-08-13 |
US20020189528A1 (en) | 2002-12-19 |
JP2009094533A (ja) | 2009-04-30 |
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