DE69508679T2 - Wafer und Verfahren zur Herstellung eines Wafers - Google Patents

Wafer und Verfahren zur Herstellung eines Wafers

Info

Publication number
DE69508679T2
DE69508679T2 DE69508679T DE69508679T DE69508679T2 DE 69508679 T2 DE69508679 T2 DE 69508679T2 DE 69508679 T DE69508679 T DE 69508679T DE 69508679 T DE69508679 T DE 69508679T DE 69508679 T2 DE69508679 T2 DE 69508679T2
Authority
DE
Germany
Prior art keywords
wafer
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69508679T
Other languages
English (en)
Other versions
DE69508679D1 (de
Inventor
Keiichiro Tanabe
Yuichiro Seki
Naoji Fujimori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Publication of DE69508679D1 publication Critical patent/DE69508679D1/de
Application granted granted Critical
Publication of DE69508679T2 publication Critical patent/DE69508679T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/279—Diamond only control of diamond crystallography
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02543—Characteristics of substrate, e.g. cutting angles
    • H03H9/02582—Characteristics of substrate, e.g. cutting angles of diamond substrates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24479—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24479—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness
    • Y10T428/24521—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness with component conforming to contour of nonplanar surface
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24479—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness
    • Y10T428/24612—Composite web or sheet
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24628—Nonplanar uniform thickness material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
    • Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
    • Y10T428/264—Up to 3 mils
    • Y10T428/265—1 mil or less
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/30—Self-sustaining carbon mass or layer with impregnant or other layer
DE69508679T 1994-06-09 1995-06-05 Wafer und Verfahren zur Herstellung eines Wafers Expired - Lifetime DE69508679T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15270194 1994-06-09

Publications (2)

Publication Number Publication Date
DE69508679D1 DE69508679D1 (de) 1999-05-06
DE69508679T2 true DE69508679T2 (de) 1999-08-12

Family

ID=15546263

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69508679T Expired - Lifetime DE69508679T2 (de) 1994-06-09 1995-06-05 Wafer und Verfahren zur Herstellung eines Wafers

Country Status (3)

Country Link
US (2) US5736226A (de)
EP (1) EP0699776B1 (de)
DE (1) DE69508679T2 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008009507A1 (de) 2008-02-15 2009-08-20 Günter Effgen GmbH Verfahren und Vorrichtung zur Oberflächenbearbeitung extrem harter Werkstoffe

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0676485B1 (de) * 1994-04-07 1998-07-08 Sumitomo Electric Industries, Limited Diamantwafer und Verfahren zur Herstellung eines Diamantwafers
DE69526129T2 (de) 1994-05-23 2002-08-22 Sumitomo Electric Industries Verfahren und Vorrichtung zum Herstellen eines mit hartem Material bedeckten Halbleiters durch Polieren
DE69535861D1 (de) * 1994-06-24 2008-11-27 Sumitomo Electric Industries Wafer und sein Herstellungsverfahren
JP3586031B2 (ja) * 1996-03-27 2004-11-10 株式会社東芝 サセプタおよび熱処理装置および熱処理方法
US6447843B1 (en) 1997-03-27 2002-09-10 Saint-Gobain Industrial Ceramics, Inc. Synthetic diamond wear component and method
JP3168961B2 (ja) * 1997-10-06 2001-05-21 住友電気工業株式会社 ダイヤモンド基板及びダイヤモンド基板の評価方法並びにダイヤモンド表面弾性波フィルタ
JP3125046B2 (ja) * 1997-11-21 2001-01-15 工業技術院長 ダイヤモンド単結晶薄膜製造方法
US6416865B1 (en) 1998-10-30 2002-07-09 Sumitomo Electric Industries, Ltd. Hard carbon film and surface acoustic-wave substrate
DE60018634T2 (de) * 1999-05-12 2005-08-04 National Institute Of Advanced Industrial Science And Technology Schleif- und Polierwerkzeug für Diamant, Verfahren zum Polieren von Diamant und polierter Diamant, und somit erhaltener Einkristalldiamant und gesintertes Diamantpresswerkstück
US6625250B2 (en) 1999-12-20 2003-09-23 Agere Systems Inc. Optical structures and methods for x-ray applications
JP2002338388A (ja) * 2001-02-15 2002-11-27 Ngk Insulators Ltd ダイヤモンドコート部材
US6964880B2 (en) * 2003-06-27 2005-11-15 Intel Corporation Methods for the control of flatness and electron mobility of diamond coated silicon and structures formed thereby
GB0700984D0 (en) 2007-01-18 2007-02-28 Element Six Ltd Polycrystalline diamond elements having convex surfaces
US10494713B2 (en) 2015-04-16 2019-12-03 Ii-Vi Incorporated Method of forming an optically-finished thin diamond film, diamond substrate, or diamond window of high aspect ratio
GB2544563B (en) * 2015-11-20 2019-02-06 Rfhic Corp Mounting of semiconductor-on-diamond wafers for device processing
CN110281142A (zh) * 2019-06-20 2019-09-27 山东大学 金刚石籽晶制备方法、金刚石籽晶及单晶
CN112192324A (zh) * 2020-09-25 2021-01-08 山东省科学院海洋仪器仪表研究所 一种用于对硼掺杂金刚石基底表面处理的自动化设备和方法
CN115161767B (zh) * 2022-07-25 2023-07-07 北京科技大学 一种(100)/(111)取向复合的高性能金刚石半导体的制备方法

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DE40137C (de) * p. olivier - LECQ in Templeuve, Nord-Frankreich Maschine zum Auskörnen von Aehren, Samenkapseln u. dergl
JPH0770456B2 (ja) * 1986-04-25 1995-07-31 三菱電機株式会社 半導体装置の製造方法
US4863529A (en) * 1987-03-12 1989-09-05 Sumitomo Electric Industries, Ltd. Thin film single crystal diamond substrate
JPS63256356A (ja) * 1987-04-15 1988-10-24 Hitachi Ltd 研摩方法および装置
JPH0779958B2 (ja) * 1987-05-08 1995-08-30 住友電気工業株式会社 大型ダイヤモンドの合成方法
US5270028A (en) * 1988-02-01 1993-12-14 Sumitomo Electric Industries, Ltd. Diamond and its preparation by chemical vapor deposition method
JPH0226900A (ja) * 1988-07-15 1990-01-29 Tosoh Corp ダイヤモンド膜の研磨法
JPH02173264A (ja) * 1988-12-26 1990-07-04 Olympus Optical Co Ltd 高硬度多層膜
JPH0355822A (ja) * 1989-07-25 1991-03-11 Shin Etsu Handotai Co Ltd 半導体素子形成用基板の製造方法
US5273731A (en) * 1989-09-14 1993-12-28 General Electric Company Substantially transparent free standing diamond films
JPH03145900A (ja) * 1989-11-01 1991-06-21 Yamaha Corp スピーカー用振動板
JP3028660B2 (ja) * 1991-10-21 2000-04-04 住友電気工業株式会社 ダイヤモンドヒートシンクの製造方法
JPH04358410A (ja) * 1991-06-05 1992-12-11 Sumitomo Electric Ind Ltd 表面弾性波素子及びその製造方法
US5240749A (en) * 1991-08-27 1993-08-31 University Of Central Florida Method for growing a diamond thin film on a substrate by plasma enhanced chemical vapor deposition
JP3132515B2 (ja) * 1991-09-26 2001-02-05 住友電気工業株式会社 表面弾性波素子の製造方法
US5270077A (en) * 1991-12-13 1993-12-14 General Electric Company Method for producing flat CVD diamond film
JP3121102B2 (ja) * 1992-03-26 2000-12-25 キヤノン株式会社 平板ダイヤモンド結晶、及びその形成方法
JP3252865B2 (ja) * 1992-09-11 2002-02-04 住友電気工業株式会社 表面弾性波素子および表面弾性波素子の製造方法
US5382809A (en) * 1992-09-14 1995-01-17 Sumitomo Electric Industries, Ltd. Semiconductor device including semiconductor diamond
JPH06263595A (ja) * 1993-03-10 1994-09-20 Canon Inc ダイヤモンド被覆部材及びその製造方法
JP3774904B2 (ja) * 1994-01-27 2006-05-17 住友電気工業株式会社 平坦なダイヤモンド膜の合成法とダイヤモンド自立膜及びダイヤモンド膜の研磨方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008009507A1 (de) 2008-02-15 2009-08-20 Günter Effgen GmbH Verfahren und Vorrichtung zur Oberflächenbearbeitung extrem harter Werkstoffe
WO2009129765A2 (de) 2008-02-15 2009-10-29 Gunter Effgen Gmbh Verfahren und vorrichtung zur oberflächenbearbeitung extrem harter werkstoffe
DE102008009507B4 (de) * 2008-02-15 2010-09-02 Günter Effgen GmbH Verfahren und Vorrichtung zur Oberflächenbearbeitung extrem harter Werkstoffe

Also Published As

Publication number Publication date
DE69508679D1 (de) 1999-05-06
EP0699776A1 (de) 1996-03-06
US5736226A (en) 1998-04-07
US5874130A (en) 1999-02-23
EP0699776B1 (de) 1999-03-31

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8328 Change in the person/name/address of the agent

Representative=s name: MEISSNER, BOLTE & PARTNER GBR, 80538 MUENCHEN