DE69936825D1 - Verfahren auf Oxyd-Basis zur Herstellung von dünnen Schichten von Verbindungshalbleitern und von entsprechenden elektronischen Vorrichtungen - Google Patents

Verfahren auf Oxyd-Basis zur Herstellung von dünnen Schichten von Verbindungshalbleitern und von entsprechenden elektronischen Vorrichtungen

Info

Publication number
DE69936825D1
DE69936825D1 DE69936825T DE69936825T DE69936825D1 DE 69936825 D1 DE69936825 D1 DE 69936825D1 DE 69936825 T DE69936825 T DE 69936825T DE 69936825 T DE69936825 T DE 69936825T DE 69936825 D1 DE69936825 D1 DE 69936825D1
Authority
DE
Germany
Prior art keywords
group
source material
compound
film
oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69936825T
Other languages
English (en)
Other versions
DE69936825T2 (de
Inventor
Vijay K Kapur
Bulent M Basol
Craig R Leidholm
Robert A Roe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Solar Electric Technology Inc
Original Assignee
International Solar Electric Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Solar Electric Technology Inc filed Critical International Solar Electric Technology Inc
Publication of DE69936825D1 publication Critical patent/DE69936825D1/de
Application granted granted Critical
Publication of DE69936825T2 publication Critical patent/DE69936825T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02568—Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02614—Transformation of metal, e.g. oxidation, nitridation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Energy (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Oxygen, Ozone, And Oxides In General (AREA)
DE69936825T 1998-07-02 1999-06-30 Verfahren auf Oxyd-Basis zur Herstellung von dünnen Schichten von Verbindungshalbleitern und von entsprechenden elektronischen Vorrichtungen Expired - Lifetime DE69936825T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US109814 1998-07-02
US09/109,814 US6127202A (en) 1998-07-02 1998-07-02 Oxide-based method of making compound semiconductor films and making related electronic devices

Publications (2)

Publication Number Publication Date
DE69936825D1 true DE69936825D1 (de) 2007-09-27
DE69936825T2 DE69936825T2 (de) 2008-05-15

Family

ID=22329702

Family Applications (2)

Application Number Title Priority Date Filing Date
DE69936825T Expired - Lifetime DE69936825T2 (de) 1998-07-02 1999-06-30 Verfahren auf Oxyd-Basis zur Herstellung von dünnen Schichten von Verbindungshalbleitern und von entsprechenden elektronischen Vorrichtungen
DE69940837T Expired - Lifetime DE69940837D1 (de) 1998-07-02 1999-06-30 Oxidbasiertes Verfahren zur Herstellung von Verbundhalbleiterfilmen und Herstellung zugehöriger elektronischer Vorrichtungen

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE69940837T Expired - Lifetime DE69940837D1 (de) 1998-07-02 1999-06-30 Oxidbasiertes Verfahren zur Herstellung von Verbundhalbleiterfilmen und Herstellung zugehöriger elektronischer Vorrichtungen

Country Status (7)

Country Link
US (1) US6127202A (de)
EP (2) EP1870943B1 (de)
JP (1) JP4303363B2 (de)
CN (1) CN1214445C (de)
AT (2) ATE430381T1 (de)
DE (2) DE69936825T2 (de)
ES (2) ES2292216T3 (de)

Families Citing this family (181)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE50015996D1 (de) * 1999-10-20 2010-10-28 Saint Gobain Vorrichtung und Verfahren zum gleichzeitigen Temperieren mehrerer Prozessiergüter
WO2002054482A2 (en) * 2000-12-13 2002-07-11 Mario Dagenais Method of efficient controllable and repeatable wet oxidation in a phosphorous-rich iii-v material system
DE10119463C2 (de) * 2001-04-12 2003-03-06 Hahn Meitner Inst Berlin Gmbh Verfahren zur Herstellung einer Chalkogenid-Halbleiterschicht des Typs ABC¶2¶ mit optischer Prozesskontrolle
EP1428243A4 (de) * 2001-04-16 2008-05-07 Bulent M Basol Verfahren zur ausbildung eines halbleiterzusammensetzungsfilms zur herstellung elektronischer bauelemente und dadurch hergestellter film
US7253355B2 (en) * 2001-12-20 2007-08-07 Rwe Schott Solar Gmbh Method for constructing a layer structure on a substrate
KR20030057067A (ko) * 2001-12-28 2003-07-04 엘지.필립스 엘시디 주식회사 인쇄방식을 이용한 패턴형성방법
DE10225606A1 (de) * 2002-06-07 2004-01-08 Daimlerchrysler Ag Halbleiterbauelement und Verfahren zur Herstellung
US7189917B2 (en) * 2003-03-26 2007-03-13 Canon Kabushiki Kaisha Stacked photovoltaic device
KR100657891B1 (ko) * 2003-07-19 2006-12-14 삼성전자주식회사 반도체 나노결정 및 그 제조방법
EP2284905A2 (de) * 2003-08-14 2011-02-16 University of Johannesburg Verfahren zur Herstellung von Halbleiterschichten aus quaternären oder höheren Legierungsmetallen der Gruppen IB-IIIA-VIA
DE10339824B4 (de) * 2003-08-24 2005-07-07 Hahn-Meitner-Institut Berlin Gmbh Beschichtungsverfahren zur Deposition und Fixierung von Partikeln auf einer Substratoberfläche und Solarzellen mit funkionellem Schichtenaufbau
US7605328B2 (en) * 2004-02-19 2009-10-20 Nanosolar, Inc. Photovoltaic thin-film cell produced from metallic blend using high-temperature printing
US20070163639A1 (en) * 2004-02-19 2007-07-19 Nanosolar, Inc. High-throughput printing of semiconductor precursor layer from microflake particles
US8048477B2 (en) * 2004-02-19 2011-11-01 Nanosolar, Inc. Chalcogenide solar cells
US7700464B2 (en) * 2004-02-19 2010-04-20 Nanosolar, Inc. High-throughput printing of semiconductor precursor layer from nanoflake particles
US20070169809A1 (en) * 2004-02-19 2007-07-26 Nanosolar, Inc. High-throughput printing of semiconductor precursor layer by use of low-melting chalcogenides
US8309163B2 (en) * 2004-02-19 2012-11-13 Nanosolar, Inc. High-throughput printing of semiconductor precursor layer by use of chalcogen-containing vapor and inter-metallic material
US20070169813A1 (en) * 2004-02-19 2007-07-26 Nanosolar, Inc. High-throughput printing of semiconductor precursor layer from microflake particles
US20070163641A1 (en) * 2004-02-19 2007-07-19 Nanosolar, Inc. High-throughput printing of semiconductor precursor layer from inter-metallic nanoflake particles
US8846141B1 (en) * 2004-02-19 2014-09-30 Aeris Capital Sustainable Ip Ltd. High-throughput printing of semiconductor precursor layer from microflake particles
US20070169812A1 (en) * 2004-02-19 2007-07-26 Nanosolar, Inc. High-throughput printing of semiconductor precursor layer from nanoflake particles
US20070166453A1 (en) * 2004-02-19 2007-07-19 Nanosolar, Inc. High-throughput printing of chalcogen layer
US8642455B2 (en) * 2004-02-19 2014-02-04 Matthew R. Robinson High-throughput printing of semiconductor precursor layer from nanoflake particles
US20080124831A1 (en) * 2004-02-19 2008-05-29 Robinson Matthew R High-throughput printing of semiconductor precursor layer from chalcogenide particles
US8623448B2 (en) * 2004-02-19 2014-01-07 Nanosolar, Inc. High-throughput printing of semiconductor precursor layer from chalcogenide microflake particles
US20060060237A1 (en) * 2004-09-18 2006-03-23 Nanosolar, Inc. Formation of solar cells on foil substrates
US7604843B1 (en) 2005-03-16 2009-10-20 Nanosolar, Inc. Metallic dispersion
US20070169811A1 (en) * 2004-02-19 2007-07-26 Nanosolar, Inc. High-throughput printing of semiconductor precursor layer by use of thermal and chemical gradients
US8329501B1 (en) * 2004-02-19 2012-12-11 Nanosolar, Inc. High-throughput printing of semiconductor precursor layer from inter-metallic microflake particles
US20070163642A1 (en) * 2004-02-19 2007-07-19 Nanosolar, Inc. High-throughput printing of semiconductor precursor layer from inter-metallic microflake articles
US7663057B2 (en) * 2004-02-19 2010-02-16 Nanosolar, Inc. Solution-based fabrication of photovoltaic cell
US20070163643A1 (en) * 2004-02-19 2007-07-19 Nanosolar, Inc. High-throughput printing of chalcogen layer and the use of an inter-metallic material
US7306823B2 (en) * 2004-09-18 2007-12-11 Nanosolar, Inc. Coated nanoparticles and quantum dots for solution-based fabrication of photovoltaic cells
US8372734B2 (en) * 2004-02-19 2013-02-12 Nanosolar, Inc High-throughput printing of semiconductor precursor layer from chalcogenide nanoflake particles
SE0400582D0 (sv) * 2004-03-05 2004-03-05 Forskarpatent I Uppsala Ab Method for in-line process control of the CIGS process
JP4695850B2 (ja) * 2004-04-28 2011-06-08 本田技研工業株式会社 カルコパイライト型太陽電池
CH697007A5 (fr) 2004-05-03 2008-03-14 Solaronix Sa Procédé pour produire un composé chalcopyrite en couche mince.
JP2006049768A (ja) * 2004-08-09 2006-02-16 Showa Shell Sekiyu Kk Ｃｉｓ系化合物半導体薄膜太陽電池及び該太陽電池の光吸収層の製造方法
US8541048B1 (en) 2004-09-18 2013-09-24 Nanosolar, Inc. Formation of photovoltaic absorber layers on foil substrates
US7732229B2 (en) 2004-09-18 2010-06-08 Nanosolar, Inc. Formation of solar cells with conductive barrier layers and foil substrates
US7838868B2 (en) 2005-01-20 2010-11-23 Nanosolar, Inc. Optoelectronic architecture having compound conducting substrate
JP2008514006A (ja) * 2004-09-18 2008-05-01 ナノソーラー インコーポレイテッド 箔基板上の太陽電池の形成
US20090032108A1 (en) * 2007-03-30 2009-02-05 Craig Leidholm Formation of photovoltaic absorber layers on foil substrates
JP4664060B2 (ja) * 2004-12-21 2011-04-06 本田技研工業株式会社 カルコパイライト型太陽電池
US8927315B1 (en) 2005-01-20 2015-01-06 Aeris Capital Sustainable Ip Ltd. High-throughput assembly of series interconnected solar cells
JP4969785B2 (ja) * 2005-02-16 2012-07-04 本田技研工業株式会社 カルコパイライト型太陽電池及びその製造方法
WO2006101986A2 (en) * 2005-03-16 2006-09-28 Nanosolar, Inc. Mettalic dispersion and formation of compound film for photovoltaic device active layer
JP4681352B2 (ja) * 2005-05-24 2011-05-11 本田技研工業株式会社 カルコパイライト型太陽電池
JP3963924B2 (ja) * 2005-07-22 2007-08-22 本田技研工業株式会社 カルコパイライト型太陽電池
JP4646724B2 (ja) * 2005-07-27 2011-03-09 本田技研工業株式会社 カルコパイライト型太陽電池
JP2007123532A (ja) * 2005-10-27 2007-05-17 Honda Motor Co Ltd 太陽電池
US7442413B2 (en) * 2005-11-18 2008-10-28 Daystar Technologies, Inc. Methods and apparatus for treating a work piece with a vaporous element
DE102005062977B3 (de) * 2005-12-28 2007-09-13 Sulfurcell Solartechnik Gmbh Verfahren und Vorrichtung zur Umsetzung metallischer Vorläuferschichten zu Chalkopyritschichten von CIGSS-solarzellen
EP1992010A2 (de) * 2006-02-23 2008-11-19 Van Duren, Jeroen K.J. Hochdurchsatzdrucken einer chalkogenschicht und verwendung eines intermetallischen materials
CN101443919B (zh) * 2006-02-23 2014-03-05 耶罗恩·K·J·范杜伦 形成吸收层的方法、用于形成吸收层的前体材料以及太阳能电池
US8017860B2 (en) * 2006-05-15 2011-09-13 Stion Corporation Method and structure for thin film photovoltaic materials using bulk semiconductor materials
US9105776B2 (en) 2006-05-15 2015-08-11 Stion Corporation Method and structure for thin film photovoltaic materials using semiconductor materials
WO2008021604A2 (en) * 2006-05-19 2008-02-21 Purdue Research Foundation Rapid synthesis of ternary, binary and multinary chalcogenide nanoparticles
WO2007146964A2 (en) * 2006-06-12 2007-12-21 Robinson Matthew R Thin-film devices fromed from solid particles
KR100909179B1 (ko) * 2006-07-24 2009-07-22 주식회사 엘지화학 Ｃｉｓ계 태양전지 흡수층의 제조방법
EP2083865A2 (de) * 2006-10-12 2009-08-05 C-3 International, Llc Verfahren zur bereitstellung einer prophylaktischen oberflächenbehandlung für flüssigkeitsaufbereitungssysteme und ihre komponenten
WO2008063190A2 (en) * 2006-11-09 2008-05-29 Midwest Research Institute Precursors for formation of copper selenide, indium selenide, copper indium diselenide, and/or copper indium gallium diselenide films
WO2008057119A1 (en) * 2006-11-09 2008-05-15 Midwest Research Institue Formation of copper-indium-selenide and/or copper-indium-gallium-selenide films from indium selenide and copper selenide precursors
US7892519B2 (en) * 2006-12-14 2011-02-22 Idaho State University Rapid synthesis and size control of chalcopyrite-based semi-conductor nanoparticles using microwave irradiation
US20080280030A1 (en) * 2007-01-31 2008-11-13 Van Duren Jeoren K J Solar cell absorber layer formed from metal ion precursors
US8071179B2 (en) 2007-06-29 2011-12-06 Stion Corporation Methods for infusing one or more materials into nano-voids if nanoporous or nanostructured materials
US7919400B2 (en) * 2007-07-10 2011-04-05 Stion Corporation Methods for doping nanostructured materials and nanostructured thin films
US8614396B2 (en) * 2007-09-28 2013-12-24 Stion Corporation Method and material for purifying iron disilicide for photovoltaic application
US8287942B1 (en) 2007-09-28 2012-10-16 Stion Corporation Method for manufacture of semiconductor bearing thin film material
US8759671B2 (en) 2007-09-28 2014-06-24 Stion Corporation Thin film metal oxide bearing semiconductor material for single junction solar cell devices
US8058092B2 (en) 2007-09-28 2011-11-15 Stion Corporation Method and material for processing iron disilicide for photovoltaic application
US20090087939A1 (en) * 2007-09-28 2009-04-02 Stion Corporation Column structure thin film material using metal oxide bearing semiconductor material for solar cell devices
KR101054747B1 (ko) * 2007-10-18 2011-08-05 주식회사 엘지화학 환원제를 이용한 ６ａ족 원소를 포함하는 화합물의제조방법
KR101030780B1 (ko) 2007-11-14 2011-04-27 성균관대학교산학협력단 Ⅰ－ⅲ－ⅵ２ 나노입자의 제조방법 및 다결정 광흡수층박막의 제조방법
US7998762B1 (en) 2007-11-14 2011-08-16 Stion Corporation Method and system for large scale manufacture of thin film photovoltaic devices using multi-chamber configuration
TWI399861B (zh) * 2007-12-06 2013-06-21 Chung Shan Inst Of Science Structure of solar cell absorbent layer and manufacturing method thereof
TWI373148B (en) * 2007-12-20 2012-09-21 Ind Tech Res Inst Fabrication methods for nano-scale chalcopyritic powders and polymeric thin-film solar cells
CN101471394A (zh) 2007-12-29 2009-07-01 中国科学院上海硅酸盐研究所 铜铟镓硫硒薄膜太阳电池光吸收层的制备方法
WO2009151665A2 (en) * 2008-03-04 2009-12-17 Brent Bollman Methods and devices for processing a precursor layer in a group via environment
US8951446B2 (en) 2008-03-13 2015-02-10 Battelle Energy Alliance, Llc Hybrid particles and associated methods
US8324414B2 (en) * 2009-12-23 2012-12-04 Battelle Energy Alliance, Llc Methods of forming single source precursors, methods of forming polymeric single source precursors, and single source precursors and intermediate products formed by such methods
US8003070B2 (en) * 2008-03-13 2011-08-23 Battelle Energy Alliance, Llc Methods for forming particles from single source precursors
US9371226B2 (en) 2011-02-02 2016-06-21 Battelle Energy Alliance, Llc Methods for forming particles
US7842534B2 (en) * 2008-04-02 2010-11-30 Sunlight Photonics Inc. Method for forming a compound semi-conductor thin-film
US9646828B2 (en) * 2008-04-02 2017-05-09 Sunlight Photonics Inc. Reacted particle deposition (RPD) method for forming a compound semi-conductor thin-film
US8623301B1 (en) 2008-04-09 2014-01-07 C3 International, Llc Solid oxide fuel cells, electrolyzers, and sensors, and methods of making and using the same
US20110056564A1 (en) * 2008-05-09 2011-03-10 Korgel Brian A Nanoparticles and methods of making and using
US8642138B2 (en) 2008-06-11 2014-02-04 Stion Corporation Processing method for cleaning sulfur entities of contact regions
US9087943B2 (en) 2008-06-25 2015-07-21 Stion Corporation High efficiency photovoltaic cell and manufacturing method free of metal disulfide barrier material
US8003432B2 (en) 2008-06-25 2011-08-23 Stion Corporation Consumable adhesive layer for thin film photovoltaic material
US7855089B2 (en) 2008-09-10 2010-12-21 Stion Corporation Application specific solar cell and method for manufacture using thin film photovoltaic materials
US8529699B2 (en) * 2008-09-16 2013-09-10 Stanley Electric Co., Ltd. Method of growing zinc-oxide-based semiconductor and method of manufacturing semiconductor light emitting device
US8394662B1 (en) 2008-09-29 2013-03-12 Stion Corporation Chloride species surface treatment of thin film photovoltaic cell and manufacturing method
US8476104B1 (en) 2008-09-29 2013-07-02 Stion Corporation Sodium species surface treatment of thin film photovoltaic cell and manufacturing method
US8026122B1 (en) 2008-09-29 2011-09-27 Stion Corporation Metal species surface treatment of thin film photovoltaic cell and manufacturing method
US8236597B1 (en) 2008-09-29 2012-08-07 Stion Corporation Bulk metal species treatment of thin film photovoltaic cell and manufacturing method
US8008112B1 (en) 2008-09-29 2011-08-30 Stion Corporation Bulk chloride species treatment of thin film photovoltaic cell and manufacturing method
US8008110B1 (en) 2008-09-29 2011-08-30 Stion Corporation Bulk sodium species treatment of thin film photovoltaic cell and manufacturing method
US8501521B1 (en) 2008-09-29 2013-08-06 Stion Corporation Copper species surface treatment of thin film photovoltaic cell and manufacturing method
US8383450B2 (en) 2008-09-30 2013-02-26 Stion Corporation Large scale chemical bath system and method for cadmium sulfide processing of thin film photovoltaic materials
US7863074B2 (en) 2008-09-30 2011-01-04 Stion Corporation Patterning electrode materials free from berm structures for thin film photovoltaic cells
US7910399B1 (en) 2008-09-30 2011-03-22 Stion Corporation Thermal management and method for large scale processing of CIS and/or CIGS based thin films overlying glass substrates
US7947524B2 (en) 2008-09-30 2011-05-24 Stion Corporation Humidity control and method for thin film photovoltaic materials
US8425739B1 (en) 2008-09-30 2013-04-23 Stion Corporation In chamber sodium doping process and system for large scale cigs based thin film photovoltaic materials
US8741689B2 (en) 2008-10-01 2014-06-03 Stion Corporation Thermal pre-treatment process for soda lime glass substrate for thin film photovoltaic materials
US20110018103A1 (en) 2008-10-02 2011-01-27 Stion Corporation System and method for transferring substrates in large scale processing of cigs and/or cis devices
US8435826B1 (en) 2008-10-06 2013-05-07 Stion Corporation Bulk sulfide species treatment of thin film photovoltaic cell and manufacturing method
US8003430B1 (en) 2008-10-06 2011-08-23 Stion Corporation Sulfide species treatment of thin film photovoltaic cell and manufacturing method
USD625695S1 (en) 2008-10-14 2010-10-19 Stion Corporation Patterned thin film photovoltaic module
US8168463B2 (en) 2008-10-17 2012-05-01 Stion Corporation Zinc oxide film method and structure for CIGS cell
JP5511320B2 (ja) * 2008-11-11 2014-06-04 京セラ株式会社 薄膜太陽電池の製法
US8344243B2 (en) 2008-11-20 2013-01-01 Stion Corporation Method and structure for thin film photovoltaic cell using similar material junction
US8110428B2 (en) * 2008-11-25 2012-02-07 Sunlight Photonics Inc. Thin-film photovoltaic devices
CN102361830A (zh) 2009-01-21 2012-02-22 珀杜研究基金会 含CuInS2纳米颗粒的前体层的硒化
FR2956869B1 (fr) 2010-03-01 2014-05-16 Alex Hr Roustaei Systeme de production de film flexible a haute capacite destine a des cellules photovoltaiques et oled par deposition cyclique des couches
US8247243B2 (en) 2009-05-22 2012-08-21 Nanosolar, Inc. Solar cell interconnection
BRPI1011652A2 (pt) * 2009-05-26 2016-03-22 Purdue Research Foundation películas finas para células fotovoltaicas
USD662040S1 (en) 2009-06-12 2012-06-19 Stion Corporation Pin striped thin film solar module for garden lamp
USD628332S1 (en) 2009-06-12 2010-11-30 Stion Corporation Pin striped thin film solar module for street lamp
USD632415S1 (en) 2009-06-13 2011-02-08 Stion Corporation Pin striped thin film solar module for cluster lamp
USD652262S1 (en) 2009-06-23 2012-01-17 Stion Corporation Pin striped thin film solar module for cooler
USD662041S1 (en) 2009-06-23 2012-06-19 Stion Corporation Pin striped thin film solar module for laptop personal computer
US8507786B1 (en) 2009-06-27 2013-08-13 Stion Corporation Manufacturing method for patterning CIGS/CIS solar cells
USD627696S1 (en) 2009-07-01 2010-11-23 Stion Corporation Pin striped thin film solar module for recreational vehicle
SG178227A1 (en) 2009-08-04 2012-03-29 Precursor Energetics Inc Polymeric precursors for cis and cigs photovoltaics
WO2011017237A2 (en) 2009-08-04 2011-02-10 Precursor Energetics, Inc. Polymeric precursors for caigs and aigs silver-containing photovoltaics
JP2013501381A (ja) * 2009-08-04 2013-01-10 プリカーサー エナジェティクス， インコーポレイテッド 制御された化学量論を有する光起電性アブソーバーのための方法
WO2011017238A2 (en) 2009-08-04 2011-02-10 Precursor Energetics, Inc. Polymeric precursors for caigas aluminum-containing photovoltaics
US8398772B1 (en) 2009-08-18 2013-03-19 Stion Corporation Method and structure for processing thin film PV cells with improved temperature uniformity
JP5719546B2 (ja) * 2009-09-08 2015-05-20 東京応化工業株式会社 塗布装置及び塗布方法
JP5469966B2 (ja) 2009-09-08 2014-04-16 東京応化工業株式会社 塗布装置及び塗布方法
US7838403B1 (en) 2009-09-14 2010-11-23 International Business Machines Corporation Spray pyrolysis for large-scale production of chalcopyrite absorber layer in photovoltaic devices
JP5537890B2 (ja) * 2009-10-06 2014-07-02 スタンレー電気株式会社 酸化亜鉛系半導体発光素子の製造方法
US8809096B1 (en) 2009-10-22 2014-08-19 Stion Corporation Bell jar extraction tool method and apparatus for thin film photovoltaic materials
US8440498B2 (en) 2009-10-28 2013-05-14 Nanosolar, Inc. Thin-film devices formed from solid particles
US8894760B2 (en) * 2009-11-20 2014-11-25 Rohm And Haas Electronic Materials Llc Group 3a ink and methods of making and using same
CN102070121A (zh) * 2009-11-20 2011-05-25 正峰新能源股份有限公司 一种铜铟镓硒纳米颗粒制作方法
JP5464984B2 (ja) * 2009-11-26 2014-04-09 京セラ株式会社 半導体層の製造方法および光電変換装置の製造方法
WO2011084171A1 (en) 2009-12-17 2011-07-14 Precursor Energetics, Inc. Molecular precursors for optoelectronics
US8859880B2 (en) 2010-01-22 2014-10-14 Stion Corporation Method and structure for tiling industrial thin-film solar devices
US8263494B2 (en) 2010-01-25 2012-09-11 Stion Corporation Method for improved patterning accuracy for thin film photovoltaic panels
US8026124B2 (en) * 2010-01-29 2011-09-27 Jenn Feng New Energy Co., Ltd. Method for fabricating copper/indium/gallium/selenium solar cell by wet process under non-vacuum condition
TWI425978B (zh) * 2010-02-05 2014-02-11 Chung Hsin Lu 以溶膠-凝膠法製備ib-iiia-via化合物粉末之方法
WO2011100361A2 (en) 2010-02-10 2011-08-18 C3 International. Llc Low temperature electrolytes for solid oxide cells having high ionic conductivity
JP5528160B2 (ja) * 2010-03-02 2014-06-25 住友金属鉱山株式会社 プリカーサ膜形成用の厚膜組成物および該厚膜組成物を用いたカルコパイライト膜の製造方法
TWI411121B (zh) * 2010-03-11 2013-10-01 Ind Tech Res Inst 光吸收層之製造方法及應用其之太陽能電池結構
FR2957365B1 (fr) * 2010-03-11 2012-04-27 Electricite De France Procede de preparation d'une couche mince d'absorbeur pour cellules photovoltaiques
US9096930B2 (en) 2010-03-29 2015-08-04 Stion Corporation Apparatus for manufacturing thin film photovoltaic devices
CN102024858B (zh) * 2010-04-19 2013-12-04 福建欧德生光电科技有限公司 油墨、薄膜太阳能电池及其制造方法
WO2011146115A1 (en) 2010-05-21 2011-11-24 Heliovolt Corporation Liquid precursor for deposition of copper selenide and method of preparing the same
WO2011162865A2 (en) * 2010-06-23 2011-12-29 Applied Materials, Inc. A nucleation promotion layer formed on a substrate to enhance deposition of a transparent conductive layer
KR20130098272A (ko) 2010-07-02 2013-09-04 유미코르 셀렌화물 분말 및 제조 방법
US8461061B2 (en) 2010-07-23 2013-06-11 Stion Corporation Quartz boat method and apparatus for thin film thermal treatment
WO2012023973A2 (en) 2010-08-16 2012-02-23 Heliovolt Corporation Liquid precursor for deposition of indium selenide and method of preparing the same
US20120073637A1 (en) 2010-09-15 2012-03-29 Precursor Energetics, Inc. Deposition processes and photovoltaic devices with compositional gradients
JP5676989B2 (ja) * 2010-09-16 2015-02-25 京セラ株式会社 光電変換装置の製造方法
US8628997B2 (en) 2010-10-01 2014-01-14 Stion Corporation Method and device for cadmium-free solar cells
KR20120061396A (ko) * 2010-12-03 2012-06-13 삼성모바일디스플레이주식회사 유기 발광 표시 장치
JP5497160B2 (ja) * 2010-12-07 2014-05-21 Ｄｏｗａホールディングス株式会社 カルコゲン化合物粉、カルコゲン化合物ペースト、カルコゲン化合物粉の製造方法、カルコゲン化合物ペーストの製造方法およびカルコゲン化合物薄膜の製造方法
US8998606B2 (en) 2011-01-14 2015-04-07 Stion Corporation Apparatus and method utilizing forced convection for uniform thermal treatment of thin film devices
US8728200B1 (en) 2011-01-14 2014-05-20 Stion Corporation Method and system for recycling processing gas for selenization of thin film photovoltaic materials
WO2012107256A1 (en) 2011-02-10 2012-08-16 Empa Process for producing light absorbing chalcogenide films
US8771555B2 (en) * 2011-05-06 2014-07-08 Neo Solar Power Corp. Ink composition
US8436445B2 (en) 2011-08-15 2013-05-07 Stion Corporation Method of manufacture of sodium doped CIGS/CIGSS absorber layers for high efficiency photovoltaic devices
JP5764016B2 (ja) 2011-09-07 2015-08-12 日東電工株式会社 Ｃｉｇｓ膜の製法およびそれを用いるｃｉｇｓ太陽電池の製法
ES2402313B1 (es) 2011-09-30 2014-03-04 Universitat Jaume I De Castellón Tintas para la obtención "in situ" de calcógenos y/o calcogenuros que dan lugar a capas de semiconductores, su obtención y modo de empleo
TWI500170B (zh) * 2011-11-22 2015-09-11 Lu Chung Hsin 製造摻雜Ｂｉ之IB-IIIA-VIA化合物之光吸收層的方法與包含其之太陽能電池
TWI455327B (zh) * 2011-12-22 2014-10-01 Motech Ind Inc Photovoltaic glass, photovoltaic glass production methods and photovoltaic cells with solar modules
JPWO2013099947A1 (ja) * 2011-12-27 2015-05-11 京セラ株式会社 光電変換装置
JP5320535B1 (ja) * 2012-04-24 2013-10-23 株式会社半一 化合物半導体薄膜の製造方法及び化合物薄膜太陽電池の製造方法
US9105797B2 (en) 2012-05-31 2015-08-11 Alliance For Sustainable Energy, Llc Liquid precursor inks for deposition of In—Se, Ga—Se and In—Ga—Se
US9082619B2 (en) * 2012-07-09 2015-07-14 International Solar Electric Technology, Inc. Methods and apparatuses for forming semiconductor films
US8945980B2 (en) 2012-12-11 2015-02-03 Sharp Laboratories Of America, Inc. Alkali metal-doped solution-processed metal chalcogenides
WO2015009618A1 (en) 2013-07-15 2015-01-22 Fcet, Llc Low temperature solid oxide cells
KR101638470B1 (ko) 2013-07-19 2016-07-11 주식회사 엘지화학 금속 나노 입자를 포함하는 광흡수층 제조용 잉크 조성물 및 이를 사용한 박막의 제조 방법
CN105705467B (zh) * 2013-08-26 2019-09-27 康宁股份有限公司 用于化学强化的玻璃的局部退火的方法
US9960314B2 (en) * 2013-09-13 2018-05-01 Nanoco Technologies Ltd. Inorganic salt-nanoparticle ink for thin film photovoltaic devices and related methods
TWI560891B (en) * 2014-01-31 2016-12-01 Nanoco Technologies Ltd H2s reactive anneal to reduce carbon in nanoparticle-derived thin films
JP2015211195A (ja) * 2014-04-30 2015-11-24 日東電工株式会社 Ｃｉｇｓ半導体層およびその製造方法ならびにそれを用いたｃｉｇｓ光電変換装置
EP2947682A1 (de) * 2014-05-20 2015-11-25 IMEC vzw Verfahren zur herstellung von chalcogenidschichten
CN114975785A (zh) * 2022-04-25 2022-08-30 厦门大学 太阳能电池电子传输层及其制备方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3222137A1 (de) * 1982-06-11 1983-12-15 Degussa Ag, 6000 Frankfurt Verfahren zur herstellung von ueberzuegen aus indium und indiumlegierungen
US4581108A (en) * 1984-01-06 1986-04-08 Atlantic Richfield Company Process of forming a compound semiconductive material
US4798660A (en) * 1985-07-16 1989-01-17 Atlantic Richfield Company Method for forming Cu In Se2 films
US5028274A (en) * 1989-06-07 1991-07-02 International Solar Electric Technology, Inc. Group I-III-VI2 semiconductor films for solar cell application
EP0574716B1 (de) * 1992-05-19 1996-08-21 Matsushita Electric Industrial Co., Ltd. Methode zur Herstellung einer Zusammensetzung des Typs Chalkopyrit
JP3091599B2 (ja) * 1992-05-19 2000-09-25 松下電器産業株式会社 カルコパイライト型化合物の製造方法
JP3484259B2 (ja) * 1995-05-15 2004-01-06 松下電器産業株式会社 半導体薄膜形成用前駆体及び半導体薄膜の製造方法
EP0743686A3 (de) * 1995-05-15 1998-12-02 Matsushita Electric Industrial Co., Ltd Vorprodukt für Halbleiterdünnschichten und Verfahren zur Herstellung von Halbleiterdünnschichten
JP3519543B2 (ja) * 1995-06-08 2004-04-19 松下電器産業株式会社 半導体薄膜形成用前駆体及び半導体薄膜の製造方法
US5730852A (en) * 1995-09-25 1998-03-24 Davis, Joseph & Negley Preparation of cuxinygazsen (X=0-2, Y=0-2, Z=0-2, N=0-3) precursor films by electrodeposition for fabricating high efficiency solar cells
JPH10150212A (ja) * 1996-11-20 1998-06-02 Matsushita Electric Ind Co Ltd 半導体薄膜形成用前駆体及び半導体薄膜の製造方法
US5985691A (en) * 1997-05-16 1999-11-16 International Solar Electric Technology, Inc. Method of making compound semiconductor films and making related electronic devices

Also Published As

Publication number Publication date
EP1870943A3 (de) 2008-03-12
ATE370518T1 (de) 2007-09-15
JP2000058893A (ja) 2000-02-25
EP0978882A3 (de) 2003-08-20
DE69936825T2 (de) 2008-05-15
CN1241804A (zh) 2000-01-19
JP4303363B2 (ja) 2009-07-29
EP0978882A2 (de) 2000-02-09
US6127202A (en) 2000-10-03
EP1870943A2 (de) 2007-12-26
ATE430381T1 (de) 2009-05-15
CN1214445C (zh) 2005-08-10
DE69940837D1 (de) 2009-06-10
EP0978882B1 (de) 2007-08-15
EP1870943B1 (de) 2009-04-29
ES2323904T3 (es) 2009-07-27
ES2292216T3 (es) 2008-03-01

Similar Documents

Publication Publication Date Title
DE69936825D1 (de) Verfahren auf Oxyd-Basis zur Herstellung von dünnen Schichten von Verbindungshalbleitern und von entsprechenden elektronischen Vorrichtungen
EP0743686A3 (de) Vorprodukt für Halbleiterdünnschichten und Verfahren zur Herstellung von Halbleiterdünnschichten
WO2002084708A3 (en) Method of forming semiconductor compound film for fabrication of electronic device and film produced by same
CA2139551A1 (en) Process for crystal growth of iii-v group compound semiconductor
EP0285132A3 (de) Verfahren zur Herstellung einer dünnen Schicht aus supraleitendem Oxid
ATE277426T1 (de) Verfahren zur herstellung eines fotovoltaischen moduls
DE59203585D1 (de) Verfahren zur Herstellung einer Solarzelle aus einer Substratscheibe.
JPS5587444A (en) Method of forming insulating film on semiconductor surface
EP0866493A3 (de) Halbleitersubstrat mit einer Verbindungshalbleiterschicht, Verfahren zu seiner Herstellung und elektronisches Gerät auf dem Halbleitersubstrat hergestellt
EP1016459A4 (de) Auf titanoxid basierter photokatalysator und verfahren zu dessen herstellung und dessen verwendung
TW346676B (en) Method of manufacturing layered ferroelectric Bi containing film
DE69734529D1 (de) P-typ-halbleiter, verfahren zu dessen herstellung, halbleiteranordnung, photovoltaisches bauelement, und verfahren zur herstellung einer halbleiteranordnung
EP0749154A3 (de) Verfahren zum Herstellen einer Schicht einer III-V Halbleiterverbindung
ATE128699T1 (de) Verfahren zur herstellung von supraleitern und deren vorläufern.
EP0266895A3 (de) Silizium enthaltende Dioxolan-, Diol- oder Diakrylatverbindungen, ihre Herstellung und Anwendung
DE3784420D1 (de) Keramischer koerper mit verdichteter oberflaeche und verfahren zu seiner herstellung.
DE69027048T2 (de) Verfahren zur herstellung von polykristallinen siliziumstäben für halbleiter sowie dafür geeigneter ofen zur thermischen zersetzung
ATE414605T1 (de) Verfahren zur herstellung eines keramischen substrats und keramisches substrat
JP2003218370A (ja) サブストレート上に層構造体を形成する方法
ATE215737T1 (de) Verfahren zur herstellung von photovoltaischen modulen aus kristallinem silizium
DE69302572D1 (de) Verfahren zur Herstellung von dünnen Ueberzügen aus anorganischen Oxiden kontrollierter Stöchiometrie
DE69108430T2 (de) Verfahren zur Herstellung einer dünnen Schicht aus supraleitendem Oxyd.
JPS5655910A (en) Production of optical multilayer film
JPS6463215A (en) High temperature superconductive material
JPS62146271A (ja) 硫化カドミウム薄膜の形成方法

Legal Events

Date Code Title Description
8381 Inventor (new situation)

Inventor name: KAPUR, VIJAY K., INGLEWOOD, CALIFORNIA 90301, US

Inventor name: BASOL, BULENT M., INGLEWOOD, CALIFORNIA 90301, US

Inventor name: LEIDHOLM, CRAIG R., INGLEWOOD, CALIFORNIA 9030, US

Inventor name: ROE, ROBERT A., INGLEWOOD, CALIFORNIA 90301, US

8364 No opposition during term of opposition