DE69734529D1 - P-typ-halbleiter, verfahren zu dessen herstellung, halbleiteranordnung, photovoltaisches bauelement, und verfahren zur herstellung einer halbleiteranordnung - Google Patents
P-typ-halbleiter, verfahren zu dessen herstellung, halbleiteranordnung, photovoltaisches bauelement, und verfahren zur herstellung einer halbleiteranordnungInfo
- Publication number
- DE69734529D1 DE69734529D1 DE69734529T DE69734529T DE69734529D1 DE 69734529 D1 DE69734529 D1 DE 69734529D1 DE 69734529 T DE69734529 T DE 69734529T DE 69734529 T DE69734529 T DE 69734529T DE 69734529 D1 DE69734529 D1 DE 69734529D1
- Authority
- DE
- Germany
- Prior art keywords
- type semiconductor
- semiconductor
- type
- cuins2
- semiconductor assembly
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title abstract 10
- 238000004519 manufacturing process Methods 0.000 title abstract 3
- 238000000034 method Methods 0.000 title 1
- 239000012535 impurity Substances 0.000 abstract 2
- 238000006243 chemical reaction Methods 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
- H01L31/0323—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2 characterised by the doping material
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
- Light Receiving Elements (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Led Devices (AREA)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1176397 | 1997-01-24 | ||
JP1176397 | 1997-01-24 | ||
JP12113697 | 1997-05-12 | ||
JP12113697A JPH10270733A (ja) | 1997-01-24 | 1997-05-12 | p型半導体、p型半導体の製造方法、光起電力素子、発光素子 |
PCT/JP1997/002829 WO1998033219A1 (fr) | 1997-01-24 | 1997-08-14 | SEMI-CONDUCTEUR DU TYPE p, SON PROCEDE DE FABRICATION, DISPOSITIF A SEMI-CONDUCTEUR, ELEMENT PHOTOVOLTAIQUE, ET PROCEDE DE FABRICATION DU DISPOSITIF A SEMI-CONDUCTEUR |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69734529D1 true DE69734529D1 (de) | 2005-12-08 |
DE69734529T2 DE69734529T2 (de) | 2006-08-10 |
Family
ID=26347284
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69734529T Expired - Lifetime DE69734529T2 (de) | 1997-01-24 | 1997-08-14 | P-typ-halbleiter, verfahren zu dessen herstellung, halbleiteranordnung, photovoltaisches bauelement, und verfahren zur herstellung einer halbleiteranordnung |
Country Status (7)
Country | Link |
---|---|
US (1) | US6153895A (de) |
EP (1) | EP0955680B1 (de) |
JP (1) | JPH10270733A (de) |
AT (1) | ATE308801T1 (de) |
AU (1) | AU3865197A (de) |
DE (1) | DE69734529T2 (de) |
WO (1) | WO1998033219A1 (de) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100374020B1 (ko) * | 2000-09-25 | 2003-02-26 | 학교법인고려중앙학원 | ITO/n형 반도체층 계면에서 터널링 접합을 이용한박막 광전지 및 그 제조방법 |
DE10112542B9 (de) * | 2001-03-15 | 2013-01-03 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes optisches Bauelement |
US20050151131A1 (en) * | 2002-06-11 | 2005-07-14 | Wager John F.Iii | Polycrystalline thin-film solar cells |
JP2004158619A (ja) * | 2002-11-06 | 2004-06-03 | Matsushita Electric Ind Co Ltd | 電子デバイスおよびその製造方法 |
DE102004040751B4 (de) * | 2004-08-23 | 2009-03-12 | Qimonda Ag | Resistiv schaltende nicht-flüchtige Speicherzelle auf der Basis von Alkali-Ionendrift, Verfahren zur Herstellung und Verwendung einer Verbindung zur Herstellung |
US7425497B2 (en) * | 2006-01-20 | 2008-09-16 | International Business Machines Corporation | Introduction of metal impurity to change workfunction of conductive electrodes |
DE102006026005A1 (de) * | 2006-06-01 | 2007-12-06 | W.C. Heraeus Gmbh | Kaltgepresste Sputtertargets |
JP4620105B2 (ja) * | 2007-11-30 | 2011-01-26 | 昭和シェル石油株式会社 | Cis系薄膜太陽電池の光吸収層の製造方法 |
JP2010040217A (ja) * | 2008-07-31 | 2010-02-18 | Fujifilm Corp | 無機el素子 |
US8203118B2 (en) * | 2009-12-11 | 2012-06-19 | Honeywell International, Inc. | Ion-trap mass spectrometer driven by a monolithic photodiode array |
EP2646593A1 (de) * | 2010-11-30 | 2013-10-09 | Dow Global Technologies LLC | Sanierung von kupfer- und indiumhaltigen legierungssputtertargets |
US9612345B2 (en) * | 2012-10-23 | 2017-04-04 | Cosolidated Nuclear Security, LLC | Visible scintillation photodetector device incorporating chalcopyrite semiconductor crystals |
DE102013221758B4 (de) * | 2013-10-25 | 2019-05-23 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Vorrichtungen zur aussendung und/oder zum empfang elektromagnetischer strahlung und verfahren zur bereitstellung derselben |
JP2015211195A (ja) * | 2014-04-30 | 2015-11-24 | 日東電工株式会社 | Cigs半導体層およびその製造方法ならびにそれを用いたcigs光電変換装置 |
JP6436006B2 (ja) * | 2015-07-06 | 2018-12-12 | 三菱マテリアル株式会社 | スパッタリングターゲット及びその製造方法 |
JP2019057651A (ja) * | 2017-09-21 | 2019-04-11 | 株式会社東芝 | 太陽電池、多接合型太陽電池、太陽電池モジュール及び太陽光発電システム |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3932291A (en) * | 1973-01-10 | 1976-01-13 | E. I. Du Pont De Nemours & Company | Preparation and doping of semiconducting forms of CuAlS2 |
JPH04336472A (ja) * | 1991-05-14 | 1992-11-24 | Matsushita Electric Ind Co Ltd | 太陽電池とその製造方法 |
JPH0697481A (ja) * | 1992-09-14 | 1994-04-08 | Matsushita Electric Ind Co Ltd | ホモ接合半導体装置とそれを用いた光電変換半導体装置の製造方法 |
JP3337255B2 (ja) * | 1993-02-15 | 2002-10-21 | 松下電器産業株式会社 | カルコパイライト構造半導体薄膜とその製造方法、薄膜太陽電池の製造方法、および発光装置の製造方法 |
JPH06283738A (ja) * | 1993-03-26 | 1994-10-07 | Asahi Chem Ind Co Ltd | 光起電力装置 |
JP3311873B2 (ja) * | 1994-09-30 | 2002-08-05 | 松下電器産業株式会社 | 半導体薄膜の製造方法 |
DE4442824C1 (de) * | 1994-12-01 | 1996-01-25 | Siemens Ag | Solarzelle mit Chalkopyrit-Absorberschicht |
EP0743686A3 (de) * | 1995-05-15 | 1998-12-02 | Matsushita Electric Industrial Co., Ltd | Vorprodukt für Halbleiterdünnschichten und Verfahren zur Herstellung von Halbleiterdünnschichten |
JP3519543B2 (ja) * | 1995-06-08 | 2004-04-19 | 松下電器産業株式会社 | 半導体薄膜形成用前駆体及び半導体薄膜の製造方法 |
JPH09213978A (ja) * | 1996-01-30 | 1997-08-15 | Asahi Chem Ind Co Ltd | カルコパイライト構造半導体およびそれを用いた光起電力装置 |
-
1997
- 1997-05-12 JP JP12113697A patent/JPH10270733A/ja active Pending
- 1997-08-14 EP EP97935784A patent/EP0955680B1/de not_active Expired - Lifetime
- 1997-08-14 DE DE69734529T patent/DE69734529T2/de not_active Expired - Lifetime
- 1997-08-14 AT AT97935784T patent/ATE308801T1/de not_active IP Right Cessation
- 1997-08-14 US US09/341,314 patent/US6153895A/en not_active Expired - Lifetime
- 1997-08-14 AU AU38651/97A patent/AU3865197A/en not_active Abandoned
- 1997-08-14 WO PCT/JP1997/002829 patent/WO1998033219A1/ja active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
DE69734529T2 (de) | 2006-08-10 |
EP0955680A1 (de) | 1999-11-10 |
EP0955680B1 (de) | 2005-11-02 |
EP0955680A4 (de) | 2000-01-19 |
WO1998033219A1 (fr) | 1998-07-30 |
JPH10270733A (ja) | 1998-10-09 |
AU3865197A (en) | 1998-08-18 |
ATE308801T1 (de) | 2005-11-15 |
US6153895A (en) | 2000-11-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |