ATE308801T1 - P-typ-halbleiter, verfahren zu dessen herstellung,halbleiteranordnung, photovoltaisches bauelement, und verfahren zur herstellung einer halbleiteranordnung - Google Patents

P-typ-halbleiter, verfahren zu dessen herstellung,halbleiteranordnung, photovoltaisches bauelement, und verfahren zur herstellung einer halbleiteranordnung

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Publication number
ATE308801T1
ATE308801T1 AT97935784T AT97935784T ATE308801T1 AT E308801 T1 ATE308801 T1 AT E308801T1 AT 97935784 T AT97935784 T AT 97935784T AT 97935784 T AT97935784 T AT 97935784T AT E308801 T1 ATE308801 T1 AT E308801T1
Authority
AT
Austria
Prior art keywords
type semiconductor
producing
semiconductor
cuins2
type
Prior art date
Application number
AT97935784T
Other languages
English (en)
Inventor
Takayuki Watanabe
Tetsuya Yamamoto
Hiroshi Yoshida
Original Assignee
Asahi Chemical Ind
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Chemical Ind filed Critical Asahi Chemical Ind
Application granted granted Critical
Publication of ATE308801T1 publication Critical patent/ATE308801T1/de

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
    • H01L31/0323—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2 characterised by the doping material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)
  • Light Receiving Elements (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Led Devices (AREA)
AT97935784T 1997-01-24 1997-08-14 P-typ-halbleiter, verfahren zu dessen herstellung,halbleiteranordnung, photovoltaisches bauelement, und verfahren zur herstellung einer halbleiteranordnung ATE308801T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP1176397 1997-01-24
JP12113697A JPH10270733A (ja) 1997-01-24 1997-05-12 ｐ型半導体、ｐ型半導体の製造方法、光起電力素子、発光素子
PCT/JP1997/002829 WO1998033219A1 (fr) 1997-01-24 1997-08-14 SEMI-CONDUCTEUR DU TYPE p, SON PROCEDE DE FABRICATION, DISPOSITIF A SEMI-CONDUCTEUR, ELEMENT PHOTOVOLTAIQUE, ET PROCEDE DE FABRICATION DU DISPOSITIF A SEMI-CONDUCTEUR

Publications (1)

Publication Number Publication Date
ATE308801T1 true ATE308801T1 (de) 2005-11-15

Family

ID=26347284

Family Applications (1)

Application Number Title Priority Date Filing Date
AT97935784T ATE308801T1 (de) 1997-01-24 1997-08-14 P-typ-halbleiter, verfahren zu dessen herstellung,halbleiteranordnung, photovoltaisches bauelement, und verfahren zur herstellung einer halbleiteranordnung

Country Status (7)

Country Link
US (1) US6153895A (de)
EP (1) EP0955680B1 (de)
JP (1) JPH10270733A (de)
AT (1) ATE308801T1 (de)
AU (1) AU3865197A (de)
DE (1) DE69734529T2 (de)
WO (1) WO1998033219A1 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
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KR100374020B1 (ko) * 2000-09-25 2003-02-26 학교법인고려중앙학원 ＩＴＯ／ｎ형 반도체층 계면에서 터널링 접합을 이용한박막 광전지 및 그 제조방법
DE10112542B9 (de) * 2001-03-15 2013-01-03 Osram Opto Semiconductors Gmbh Strahlungsemittierendes optisches Bauelement
US20050151131A1 (en) * 2002-06-11 2005-07-14 Wager John F.Iii Polycrystalline thin-film solar cells
JP2004158619A (ja) * 2002-11-06 2004-06-03 Matsushita Electric Ind Co Ltd 電子デバイスおよびその製造方法
DE102004040751B4 (de) * 2004-08-23 2009-03-12 Qimonda Ag Resistiv schaltende nicht-flüchtige Speicherzelle auf der Basis von Alkali-Ionendrift, Verfahren zur Herstellung und Verwendung einer Verbindung zur Herstellung
US7425497B2 (en) * 2006-01-20 2008-09-16 International Business Machines Corporation Introduction of metal impurity to change workfunction of conductive electrodes
DE102006026005A1 (de) * 2006-06-01 2007-12-06 W.C. Heraeus Gmbh Kaltgepresste Sputtertargets
JP4620105B2 (ja) * 2007-11-30 2011-01-26 昭和シェル石油株式会社 Ｃｉｓ系薄膜太陽電池の光吸収層の製造方法
JP2010040217A (ja) * 2008-07-31 2010-02-18 Fujifilm Corp 無機ｅｌ素子
US8203118B2 (en) * 2009-12-11 2012-06-19 Honeywell International, Inc. Ion-trap mass spectrometer driven by a monolithic photodiode array
EP2646593A1 (de) * 2010-11-30 2013-10-09 Dow Global Technologies LLC Sanierung von kupfer- und indiumhaltigen legierungssputtertargets
US9612345B2 (en) * 2012-10-23 2017-04-04 Cosolidated Nuclear Security, LLC Visible scintillation photodetector device incorporating chalcopyrite semiconductor crystals
DE102013221758B4 (de) * 2013-10-25 2019-05-23 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Vorrichtungen zur aussendung und/oder zum empfang elektromagnetischer strahlung und verfahren zur bereitstellung derselben
JP2015211195A (ja) * 2014-04-30 2015-11-24 日東電工株式会社 Ｃｉｇｓ半導体層およびその製造方法ならびにそれを用いたｃｉｇｓ光電変換装置
JP6436006B2 (ja) * 2015-07-06 2018-12-12 三菱マテリアル株式会社 スパッタリングターゲット及びその製造方法
JP2019057651A (ja) * 2017-09-21 2019-04-11 株式会社東芝 太陽電池、多接合型太陽電池、太陽電池モジュール及び太陽光発電システム

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3932291A (en) * 1973-01-10 1976-01-13 E. I. Du Pont De Nemours & Company Preparation and doping of semiconducting forms of CuAlS2
JPH04336472A (ja) * 1991-05-14 1992-11-24 Matsushita Electric Ind Co Ltd 太陽電池とその製造方法
JPH0697481A (ja) * 1992-09-14 1994-04-08 Matsushita Electric Ind Co Ltd ホモ接合半導体装置とそれを用いた光電変換半導体装置の製造方法
JP3337255B2 (ja) * 1993-02-15 2002-10-21 松下電器産業株式会社 カルコパイライト構造半導体薄膜とその製造方法、薄膜太陽電池の製造方法、および発光装置の製造方法
JPH06283738A (ja) * 1993-03-26 1994-10-07 Asahi Chem Ind Co Ltd 光起電力装置
JP3311873B2 (ja) * 1994-09-30 2002-08-05 松下電器産業株式会社 半導体薄膜の製造方法
DE4442824C1 (de) * 1994-12-01 1996-01-25 Siemens Ag Solarzelle mit Chalkopyrit-Absorberschicht
EP0743686A3 (de) * 1995-05-15 1998-12-02 Matsushita Electric Industrial Co., Ltd Vorprodukt für Halbleiterdünnschichten und Verfahren zur Herstellung von Halbleiterdünnschichten
JP3519543B2 (ja) * 1995-06-08 2004-04-19 松下電器産業株式会社 半導体薄膜形成用前駆体及び半導体薄膜の製造方法
JPH09213978A (ja) * 1996-01-30 1997-08-15 Asahi Chem Ind Co Ltd カルコパイライト構造半導体およびそれを用いた光起電力装置

Also Published As

Publication number Publication date
DE69734529T2 (de) 2006-08-10
EP0955680A1 (de) 1999-11-10
EP0955680B1 (de) 2005-11-02
EP0955680A4 (de) 2000-01-19
WO1998033219A1 (fr) 1998-07-30
DE69734529D1 (de) 2005-12-08
JPH10270733A (ja) 1998-10-09
AU3865197A (en) 1998-08-18
US6153895A (en) 2000-11-28

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