DE69928434T2 - Wärmebehandelte siliziumplättchen mit verbesserter eigengetterung - Google Patents

Wärmebehandelte siliziumplättchen mit verbesserter eigengetterung Download PDF

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Publication number
DE69928434T2
DE69928434T2 DE69928434T DE69928434T DE69928434T2 DE 69928434 T2 DE69928434 T2 DE 69928434T2 DE 69928434 T DE69928434 T DE 69928434T DE 69928434 T DE69928434 T DE 69928434T DE 69928434 T2 DE69928434 T2 DE 69928434T2
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Germany
Prior art keywords
wafer
oxygen
defects
concentration
heat treatment
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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DE69928434T
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German (de)
English (en)
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DE69928434D1 (de
Inventor
J. Robert FALSTER
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SunEdison Inc
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SunEdison Inc
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Publication of DE69928434T2 publication Critical patent/DE69928434T2/de
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P36/00—Gettering within semiconductor bodies
    • H10P36/20—Intrinsic gettering, i.e. thermally inducing defects by using oxygen present in the silicon body

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  • Crystals, And After-Treatments Of Crystals (AREA)
DE69928434T 1998-09-02 1999-08-27 Wärmebehandelte siliziumplättchen mit verbesserter eigengetterung Expired - Lifetime DE69928434T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US9892198P 1998-09-02 1998-09-02
US98921P 1998-09-02
PCT/US1999/019636 WO2000013209A2 (en) 1998-09-02 1999-08-27 Thermally annealed silicon wafers having improved intrinsic gettering

Publications (2)

Publication Number Publication Date
DE69928434D1 DE69928434D1 (de) 2005-12-22
DE69928434T2 true DE69928434T2 (de) 2006-07-27

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Application Number Title Priority Date Filing Date
DE69928434T Expired - Lifetime DE69928434T2 (de) 1998-09-02 1999-08-27 Wärmebehandelte siliziumplättchen mit verbesserter eigengetterung
DE69941196T Expired - Lifetime DE69941196D1 (de) 1998-09-02 1999-08-27 Wärmebehandelte Siliziumscheiben mit verbesserter Eigengetterung

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE69941196T Expired - Lifetime DE69941196D1 (de) 1998-09-02 1999-08-27 Wärmebehandelte Siliziumscheiben mit verbesserter Eigengetterung

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US (2) US6361619B1 (enExample)
EP (1) EP1129471B1 (enExample)
JP (2) JP4405082B2 (enExample)
KR (1) KR100816696B1 (enExample)
CN (1) CN1181522C (enExample)
DE (2) DE69928434T2 (enExample)
TW (1) TW434652B (enExample)
WO (1) WO2000013209A2 (enExample)

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US20090004426A1 (en) * 2007-06-29 2009-01-01 Memc Electronic Materials, Inc. Suppression of Oxygen Precipitation in Heavily Doped Single Crystal Silicon Substrates
US20090004458A1 (en) * 2007-06-29 2009-01-01 Memc Electronic Materials, Inc. Diffusion Control in Heavily Doped Substrates
US7977216B2 (en) 2008-09-29 2011-07-12 Magnachip Semiconductor, Ltd. Silicon wafer and fabrication method thereof
US7939432B2 (en) * 2008-12-15 2011-05-10 Macronix International Co., Ltd. Method of improving intrinsic gettering ability of wafer
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EP2695184B1 (en) * 2011-04-06 2018-02-14 Oxford University Innovation Limited Processing a wafer for an electronic circuit
KR101383608B1 (ko) 2011-10-20 2014-04-10 주식회사 엘지실트론 저온 공정에서 근접 게터링 능력을 갖는 실리콘 웨이퍼 및 그 제조 방법
CN104651946B (zh) * 2015-03-19 2017-06-23 太原理工大学 基于硅氢键流密度法的硅波导表面光滑工艺
US9758317B2 (en) * 2015-07-12 2017-09-12 Eaglestone Inc. Low profile transfer conveyor for use with conveyor systems
CN107154353B (zh) * 2016-03-03 2020-01-24 上海新昇半导体科技有限公司 晶圆热处理的方法
EP3562978B1 (en) * 2016-12-28 2021-03-10 Sunedison Semiconductor Limited Method of treating silicon wafers to have intrinsic gettering and gate oxide integrity yield
DE102017219255A1 (de) 2017-10-26 2019-05-02 Siltronic Ag Halbleiterscheibe aus einkristallinem Silizium
EP3929334A1 (de) 2020-06-23 2021-12-29 Siltronic AG Verfahren zur herstellung von halbleiterscheiben

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Also Published As

Publication number Publication date
US20020170631A1 (en) 2002-11-21
DE69928434D1 (de) 2005-12-22
JP2010004054A (ja) 2010-01-07
JP4405082B2 (ja) 2010-01-27
JP4681063B2 (ja) 2011-05-11
TW434652B (en) 2001-05-16
EP1129471A2 (en) 2001-09-05
JP2002524844A (ja) 2002-08-06
CN1181522C (zh) 2004-12-22
WO2000013209A3 (en) 2000-12-21
WO2000013209A2 (en) 2000-03-09
DE69941196D1 (de) 2009-09-10
US6686260B2 (en) 2004-02-03
KR100816696B1 (ko) 2008-03-27
EP1129471B1 (en) 2005-11-16
US6361619B1 (en) 2002-03-26
KR20010086360A (ko) 2001-09-10
CN1321334A (zh) 2001-11-07

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