DE69902494T2 - Verfahren zur Herstellung eines einkristallinen Siliciumwafers und durch das Verfahren hergestellter einkristalliner Siliciumwafer - Google Patents
Verfahren zur Herstellung eines einkristallinen Siliciumwafers und durch das Verfahren hergestellter einkristalliner SiliciumwaferInfo
- Publication number
- DE69902494T2 DE69902494T2 DE69902494T DE69902494T DE69902494T2 DE 69902494 T2 DE69902494 T2 DE 69902494T2 DE 69902494 T DE69902494 T DE 69902494T DE 69902494 T DE69902494 T DE 69902494T DE 69902494 T2 DE69902494 T2 DE 69902494T2
- Authority
- DE
- Germany
- Prior art keywords
- single crystal
- silicon wafer
- crystal silicon
- manufacturing
- produced
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/02—Heat treatment
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7486898 | 1998-03-09 | ||
JP34361298 | 1998-11-17 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69902494D1 DE69902494D1 (de) | 2002-09-19 |
DE69902494T2 true DE69902494T2 (de) | 2002-12-19 |
Family
ID=26416046
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69902494T Expired - Lifetime DE69902494T2 (de) | 1998-03-09 | 1999-03-05 | Verfahren zur Herstellung eines einkristallinen Siliciumwafers und durch das Verfahren hergestellter einkristalliner Siliciumwafer |
Country Status (5)
Country | Link |
---|---|
US (1) | US6191009B1 (de) |
EP (1) | EP0942078B1 (de) |
KR (1) | KR100581047B1 (de) |
DE (1) | DE69902494T2 (de) |
TW (1) | TW589415B (de) |
Families Citing this family (48)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE69908965T2 (de) * | 1998-10-14 | 2004-05-13 | Memc Electronic Materials, Inc. | Wärmegetempertes einkristallines silizium mit niedriger fehlerdichte |
KR20010083771A (ko) * | 1998-12-28 | 2001-09-01 | 와다 다다시 | 실리콘 웨이퍼의 열처리 방법 및 실리콘 웨이퍼 |
JP3988307B2 (ja) | 1999-03-26 | 2007-10-10 | 株式会社Sumco | シリコン単結晶、シリコンウェーハ及びエピタキシャルウェーハ |
US20020142170A1 (en) | 1999-07-28 | 2002-10-03 | Sumitomo Metal Industries, Ltd. | Silicon single crystal, silicon wafer, and epitaxial wafer |
WO2001016409A1 (fr) | 1999-08-27 | 2001-03-08 | Komatsu Denshi Kinzoku Kabushiki Kaisha | Plaquette en silicium et procede de fabrication, et procede d'evaluation de plaquette en silicium |
KR100780097B1 (ko) * | 1999-08-30 | 2007-11-29 | 신에쯔 한도타이 가부시키가이샤 | 실리콘 단결정의 제조방법, 및 그 방법으로 제조된 실리콘단결정과 실리콘 웨이퍼 |
DE19941902A1 (de) * | 1999-09-02 | 2001-03-15 | Wacker Siltronic Halbleitermat | Verfahren zur Herstellung von mit Stickstoff dotierten Halbleiterscheiben |
KR100580776B1 (ko) * | 1999-11-04 | 2006-05-15 | 주식회사 하이닉스반도체 | 반도체 소자의 게터링 방법 |
JP3787472B2 (ja) * | 1999-11-12 | 2006-06-21 | 信越半導体株式会社 | シリコンウエーハおよびその製造方法ならびにシリコンウエーハの評価方法 |
JP3994602B2 (ja) * | 1999-11-12 | 2007-10-24 | 信越半導体株式会社 | シリコン単結晶ウエーハおよびその製造方法並びにsoiウエーハ |
DE10014650A1 (de) * | 2000-03-24 | 2001-10-04 | Wacker Siltronic Halbleitermat | Halbleiterscheibe aus Silicium und Verfahren zur Herstellung der Halbleiterscheibe |
JP2002009081A (ja) * | 2000-06-26 | 2002-01-11 | Toshiba Corp | 半導体装置及びその製造方法 |
US6339016B1 (en) * | 2000-06-30 | 2002-01-15 | Memc Electronic Materials, Inc. | Method and apparatus for forming an epitaxial silicon wafer with a denuded zone |
JP4463957B2 (ja) | 2000-09-20 | 2010-05-19 | 信越半導体株式会社 | シリコンウエーハの製造方法およびシリコンウエーハ |
JP2004537161A (ja) | 2001-04-11 | 2004-12-09 | エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド | 高抵抗率czシリコンにおけるサーマルドナー生成の制御 |
JP4646440B2 (ja) * | 2001-05-28 | 2011-03-09 | 信越半導体株式会社 | 窒素ドープアニールウエーハの製造方法 |
US7189293B2 (en) * | 2001-06-28 | 2007-03-13 | Shin-Etsu Handotai Co., Ltd. | Method of producing annealed wafer and annealed wafer |
JP4566478B2 (ja) | 2001-08-09 | 2010-10-20 | シルトロニック・ジャパン株式会社 | シリコン半導体基板およびその製造方法 |
JP4615161B2 (ja) * | 2001-08-23 | 2011-01-19 | 信越半導体株式会社 | エピタキシャルウエーハの製造方法 |
JP4633977B2 (ja) * | 2001-08-30 | 2011-02-16 | 信越半導体株式会社 | アニールウエーハの製造方法及びアニールウエーハ |
JP4549589B2 (ja) * | 2001-09-14 | 2010-09-22 | シルトロニック・ジャパン株式会社 | シリコン半導体基板およびその製造方法 |
JP4567251B2 (ja) | 2001-09-14 | 2010-10-20 | シルトロニック・ジャパン株式会社 | シリコン半導体基板およびその製造方法 |
US6565652B1 (en) * | 2001-12-06 | 2003-05-20 | Seh America, Inc. | High resistivity silicon wafer and method of producing same using the magnetic field Czochralski method |
US6808781B2 (en) | 2001-12-21 | 2004-10-26 | Memc Electronic Materials, Inc. | Silicon wafers with stabilized oxygen precipitate nucleation centers and process for making the same |
US7201800B2 (en) | 2001-12-21 | 2007-04-10 | Memc Electronic Materials, Inc. | Process for making silicon wafers with stabilized oxygen precipitate nucleation centers |
WO2003060982A2 (en) * | 2001-12-21 | 2003-07-24 | Memc Electronic Materials, Inc. | Ideal oxygen precipitating silicon wafers with nitrogen/carbon stabilized oxygen precipitate nucleation centers and process for making the same |
US7014704B2 (en) * | 2003-06-06 | 2006-03-21 | Sumitomo Mitsubishi Silicon Corporation | Method for growing silicon single crystal |
JP2005060168A (ja) * | 2003-08-12 | 2005-03-10 | Shin Etsu Handotai Co Ltd | ウエーハの製造方法 |
JP4794137B2 (ja) * | 2004-04-23 | 2011-10-19 | Sumco Techxiv株式会社 | シリコン半導体基板の熱処理方法 |
JP2006054350A (ja) * | 2004-08-12 | 2006-02-23 | Komatsu Electronic Metals Co Ltd | 窒素ドープシリコンウェーハとその製造方法 |
JP2006093645A (ja) | 2004-08-24 | 2006-04-06 | Toshiba Ceramics Co Ltd | シリコンウェーハの製造方法 |
JP4661204B2 (ja) * | 2004-12-16 | 2011-03-30 | 信越半導体株式会社 | 単結晶の製造方法およびアニールウェーハの製造方法ならびにアニールウェーハ |
JP2006273631A (ja) * | 2005-03-28 | 2006-10-12 | Komatsu Electronic Metals Co Ltd | シリコン単結晶の製造方法およびアニールウェーハおよびアニールウェーハの製造方法 |
US7485928B2 (en) | 2005-11-09 | 2009-02-03 | Memc Electronic Materials, Inc. | Arsenic and phosphorus doped silicon wafer substrates having intrinsic gettering |
JP5121139B2 (ja) * | 2005-12-27 | 2013-01-16 | ジルトロニック アクチエンゲゼルシャフト | アニールウエハの製造方法 |
JP4805681B2 (ja) * | 2006-01-12 | 2011-11-02 | ジルトロニック アクチエンゲゼルシャフト | エピタキシャルウェーハおよびエピタキシャルウェーハの製造方法 |
JP5119677B2 (ja) * | 2007-02-16 | 2013-01-16 | 株式会社Sumco | シリコンウェーハ及びその製造方法 |
EP2309038B1 (de) * | 2009-10-08 | 2013-01-02 | Siltronic AG | Herstellungsverfahren eines Epitaxial-Wafers |
JP5764937B2 (ja) * | 2011-01-24 | 2015-08-19 | 信越半導体株式会社 | シリコン単結晶ウェーハの製造方法 |
KR101160267B1 (ko) * | 2011-01-27 | 2012-06-27 | 주식회사 엘지실트론 | 웨이퍼 상에 원추형 구조물 형성 방법 |
KR101340237B1 (ko) * | 2012-02-27 | 2013-12-10 | 주식회사 엘지실트론 | 단결정 실리콘 잉곳인상방법, 단결정 실리콘 잉곳, 및 에피텍셜 실리콘 웨이퍼 |
US9029243B2 (en) | 2012-10-08 | 2015-05-12 | Infineon Technologies Ag | Method for producing a semiconductor device and field-effect semiconductor device |
JP6040947B2 (ja) * | 2014-02-20 | 2016-12-07 | 信越半導体株式会社 | ワークの両頭研削方法 |
US9425063B2 (en) | 2014-06-19 | 2016-08-23 | Infineon Technologies Ag | Method of reducing an impurity concentration in a semiconductor body, method of manufacturing a semiconductor device and semiconductor device |
JP6447351B2 (ja) | 2015-05-08 | 2019-01-09 | 株式会社Sumco | シリコンエピタキシャルウェーハの製造方法およびシリコンエピタキシャルウェーハ |
CN114093764A (zh) | 2016-12-28 | 2022-02-25 | 太阳能爱迪生半导体有限公司 | 单晶硅晶片 |
WO2019209492A1 (en) | 2018-04-27 | 2019-10-31 | Globalwafers Co., Ltd. | Light assisted platelet formation facilitating layer transfer from a semiconductor donor substrate |
CN115274487A (zh) * | 2022-09-27 | 2022-11-01 | 西安奕斯伟材料科技有限公司 | 用于晶圆表面微损伤的检测方法和检测系统 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4591409A (en) * | 1984-05-03 | 1986-05-27 | Texas Instruments Incorporated | Control of nitrogen and/or oxygen in silicon via nitride oxide pressure during crystal growth |
JPS60251190A (ja) | 1984-05-25 | 1985-12-11 | Shin Etsu Handotai Co Ltd | シリコン単結晶の製造方法 |
JPH0633235B2 (ja) | 1989-04-05 | 1994-05-02 | 新日本製鐵株式会社 | 酸化膜耐圧特性の優れたシリコン単結晶及びその製造方法 |
JPH06103714B2 (ja) | 1990-11-22 | 1994-12-14 | 信越半導体株式会社 | シリコン単結晶の電気特性検査方法 |
JP2535701B2 (ja) * | 1992-03-27 | 1996-09-18 | 株式会社東芝 | 半導体装置 |
JP2785585B2 (ja) * | 1992-04-21 | 1998-08-13 | 信越半導体株式会社 | シリコン単結晶の製造方法 |
JP3285111B2 (ja) * | 1994-12-05 | 2002-05-27 | 信越半導体株式会社 | 結晶欠陥の少ないシリコン単結晶の製造方法 |
DE19637182A1 (de) * | 1996-09-12 | 1998-03-19 | Wacker Siltronic Halbleitermat | Verfahren zur Herstellung von Halbleiterscheiben aus Silicium mit geringer Defektdichte |
US6059875A (en) * | 1999-01-11 | 2000-05-09 | Seh America, Inc. | Method of effecting nitrogen doping in Czochralski grown silicon crystal |
-
1999
- 1999-03-01 TW TW088103084A patent/TW589415B/zh not_active IP Right Cessation
- 1999-03-05 DE DE69902494T patent/DE69902494T2/de not_active Expired - Lifetime
- 1999-03-05 EP EP99104483A patent/EP0942078B1/de not_active Expired - Lifetime
- 1999-03-08 US US09/264,514 patent/US6191009B1/en not_active Expired - Lifetime
- 1999-03-09 KR KR1019990007701A patent/KR100581047B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR100581047B1 (ko) | 2006-05-17 |
TW589415B (en) | 2004-06-01 |
US6191009B1 (en) | 2001-02-20 |
EP0942078A1 (de) | 1999-09-15 |
KR19990077707A (ko) | 1999-10-25 |
DE69902494D1 (de) | 2002-09-19 |
EP0942078B1 (de) | 2002-08-14 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |