KR100816696B1 - 개선된 내부 게터링을 갖는 열어닐된 웨이퍼 - Google Patents

개선된 내부 게터링을 갖는 열어닐된 웨이퍼 Download PDF

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KR100816696B1
KR100816696B1 KR1020017002617A KR20017002617A KR100816696B1 KR 100816696 B1 KR100816696 B1 KR 100816696B1 KR 1020017002617 A KR1020017002617 A KR 1020017002617A KR 20017002617 A KR20017002617 A KR 20017002617A KR 100816696 B1 KR100816696 B1 KR 100816696B1
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wafer
heat treatment
oxygen
atmosphere
concentration
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KR20010086360A (ko
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팔스떼르로베르뜨제이
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엠이엠씨 일렉트로닉 머티리얼즈 인코포레이티드
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
    • H01L21/3225—Thermally inducing defects using oxygen present in the silicon body for intrinsic gettering

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
KR1020017002617A 1998-09-02 1999-08-27 개선된 내부 게터링을 갖는 열어닐된 웨이퍼 Expired - Fee Related KR100816696B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US9892198P 1998-09-02 1998-09-02
US60/098,921 1998-09-02

Publications (2)

Publication Number Publication Date
KR20010086360A KR20010086360A (ko) 2001-09-10
KR100816696B1 true KR100816696B1 (ko) 2008-03-27

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KR1020017002617A Expired - Fee Related KR100816696B1 (ko) 1998-09-02 1999-08-27 개선된 내부 게터링을 갖는 열어닐된 웨이퍼

Country Status (8)

Country Link
US (2) US6361619B1 (enExample)
EP (1) EP1129471B1 (enExample)
JP (2) JP4405082B2 (enExample)
KR (1) KR100816696B1 (enExample)
CN (1) CN1181522C (enExample)
DE (2) DE69941196D1 (enExample)
TW (1) TW434652B (enExample)
WO (1) WO2000013209A2 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101383608B1 (ko) 2011-10-20 2014-04-10 주식회사 엘지실트론 저온 공정에서 근접 게터링 능력을 갖는 실리콘 웨이퍼 및 그 제조 방법
KR20190101414A (ko) * 2016-12-28 2019-08-30 썬에디슨 세미컨덕터 리미티드 고유 게터링 및 게이트 산화물 무결성 수율을 갖도록 규소 웨이퍼들을 처리하는 방법

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US5994761A (en) * 1997-02-26 1999-11-30 Memc Electronic Materials Spa Ideal oxygen precipitating silicon wafers and oxygen out-diffusion-less process therefor
US6236104B1 (en) * 1998-09-02 2001-05-22 Memc Electronic Materials, Inc. Silicon on insulator structure from low defect density single crystal silicon
EP1222324B1 (en) * 1999-09-23 2004-05-06 MEMC Electronic Materials, Inc. Czochralski process for growing single crystal silicon by controlling the cooling rate
US6555457B1 (en) * 2000-04-07 2003-04-29 Triquint Technology Holding Co. Method of forming a laser circuit having low penetration ohmic contact providing impurity gettering and the resultant laser circuit
TWI256076B (en) * 2001-04-11 2006-06-01 Memc Electronic Materials Control of thermal donor formation in high resistivity CZ silicon
TW541581B (en) * 2001-04-20 2003-07-11 Memc Electronic Materials Method for the preparation of a semiconductor substrate with a non-uniform distribution of stabilized oxygen precipitates
KR20040037031A (ko) * 2001-06-22 2004-05-04 엠이엠씨 일렉트로닉 머티리얼즈 인코포레이티드 이온 주입에 의한 고유 게터링을 갖는 실리콘 온인슐레이터 구조 제조 방법
KR100745308B1 (ko) * 2001-12-21 2007-08-01 엠이엠씨 일렉트로닉 머티리얼즈 인코포레이티드 질소/탄소 안정화된 산소 침전물 핵형성 중심을 가진이상적인 산소 침전 실리콘 웨이퍼 및 그 제조 방법
EP1493179B1 (en) * 2002-04-10 2007-12-12 MEMC Electronic Materials, Inc. Silicon wafer and process for controlling denuded zone depth in an ideal oxygen precipitating silicon wafer
EP1879224A3 (en) * 2002-04-10 2008-10-29 MEMC Electronic Materials, Inc. Process for controlling denuded zone depth in an ideal oxygen precipitating silicon wafer
US20040259321A1 (en) * 2003-06-19 2004-12-23 Mehran Aminzadeh Reducing processing induced stress
US6955718B2 (en) * 2003-07-08 2005-10-18 Memc Electronic Materials, Inc. Process for preparing a stabilized ideal oxygen precipitating silicon wafer
JP4617751B2 (ja) * 2004-07-22 2011-01-26 株式会社Sumco シリコンウェーハおよびその製造方法
US7485928B2 (en) * 2005-11-09 2009-02-03 Memc Electronic Materials, Inc. Arsenic and phosphorus doped silicon wafer substrates having intrinsic gettering
KR100816198B1 (ko) * 2006-08-24 2008-03-21 동부일렉트로닉스 주식회사 반도체 장치용 웨이퍼
KR100783440B1 (ko) * 2006-12-06 2007-12-07 주식회사 실트론 저산소 실리콘 웨이퍼의 결함 분석 방법
US20090004426A1 (en) * 2007-06-29 2009-01-01 Memc Electronic Materials, Inc. Suppression of Oxygen Precipitation in Heavily Doped Single Crystal Silicon Substrates
US20090004458A1 (en) * 2007-06-29 2009-01-01 Memc Electronic Materials, Inc. Diffusion Control in Heavily Doped Substrates
US7977216B2 (en) 2008-09-29 2011-07-12 Magnachip Semiconductor, Ltd. Silicon wafer and fabrication method thereof
US7939432B2 (en) * 2008-12-15 2011-05-10 Macronix International Co., Ltd. Method of improving intrinsic gettering ability of wafer
JP2009224810A (ja) * 2009-07-06 2009-10-01 Sumco Corp シリコンウェーハの製造方法、シリコンウェーハ
US20140299872A1 (en) * 2011-04-06 2014-10-09 Isis Innovation Limited Heterogeneous intergration of group iii-v or ii-vi materials with silicon or germanium
CN104651946B (zh) * 2015-03-19 2017-06-23 太原理工大学 基于硅氢键流密度法的硅波导表面光滑工艺
US9758317B2 (en) * 2015-07-12 2017-09-12 Eaglestone Inc. Low profile transfer conveyor for use with conveyor systems
CN107154353B (zh) * 2016-03-03 2020-01-24 上海新昇半导体科技有限公司 晶圆热处理的方法
DE102017219255A1 (de) 2017-10-26 2019-05-02 Siltronic Ag Halbleiterscheibe aus einkristallinem Silizium
EP3929334A1 (de) 2020-06-23 2021-12-29 Siltronic AG Verfahren zur herstellung von halbleiterscheiben

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101383608B1 (ko) 2011-10-20 2014-04-10 주식회사 엘지실트론 저온 공정에서 근접 게터링 능력을 갖는 실리콘 웨이퍼 및 그 제조 방법
KR20190101414A (ko) * 2016-12-28 2019-08-30 썬에디슨 세미컨덕터 리미티드 고유 게터링 및 게이트 산화물 무결성 수율을 갖도록 규소 웨이퍼들을 처리하는 방법
KR102306730B1 (ko) 2016-12-28 2021-09-30 썬에디슨 세미컨덕터 리미티드 고유 게터링 및 게이트 산화물 무결성 수율을 갖도록 규소 웨이퍼들을 처리하는 방법
KR20210122867A (ko) * 2016-12-28 2021-10-12 썬에디슨 세미컨덕터 리미티드 고유 게터링 및 게이트 산화물 무결성 수율을 갖도록 규소 웨이퍼들을 처리하는 방법
KR102453743B1 (ko) 2016-12-28 2022-10-11 썬에디슨 세미컨덕터 리미티드 고유 게터링 및 게이트 산화물 무결성 수율을 갖도록 규소 웨이퍼들을 처리하는 방법

Also Published As

Publication number Publication date
EP1129471B1 (en) 2005-11-16
DE69928434D1 (de) 2005-12-22
CN1181522C (zh) 2004-12-22
WO2000013209A2 (en) 2000-03-09
KR20010086360A (ko) 2001-09-10
JP4405082B2 (ja) 2010-01-27
JP2002524844A (ja) 2002-08-06
DE69928434T2 (de) 2006-07-27
US6686260B2 (en) 2004-02-03
US20020170631A1 (en) 2002-11-21
WO2000013209A3 (en) 2000-12-21
JP2010004054A (ja) 2010-01-07
TW434652B (en) 2001-05-16
US6361619B1 (en) 2002-03-26
CN1321334A (zh) 2001-11-07
EP1129471A2 (en) 2001-09-05
DE69941196D1 (de) 2009-09-10
JP4681063B2 (ja) 2011-05-11

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