TW434652B - Thermal anneal of ideal precipitating wafer to eliminate agglomerated vacancy defects - Google Patents
Thermal anneal of ideal precipitating wafer to eliminate agglomerated vacancy defects Download PDFInfo
- Publication number
- TW434652B TW434652B TW088115120A TW88115120A TW434652B TW 434652 B TW434652 B TW 434652B TW 088115120 A TW088115120 A TW 088115120A TW 88115120 A TW88115120 A TW 88115120A TW 434652 B TW434652 B TW 434652B
- Authority
- TW
- Taiwan
- Prior art keywords
- wafer
- oxygen
- layer
- concentration
- front surface
- Prior art date
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- 230000007547 defect Effects 0.000 title claims abstract description 65
- 230000001376 precipitating effect Effects 0.000 title 1
- 239000001301 oxygen Substances 0.000 claims abstract description 135
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 135
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 134
- 238000000034 method Methods 0.000 claims abstract description 101
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 56
- 238000001556 precipitation Methods 0.000 claims abstract description 56
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 56
- 239000010703 silicon Substances 0.000 claims abstract description 56
- 238000010438 heat treatment Methods 0.000 claims abstract description 49
- 239000013078 crystal Substances 0.000 claims abstract description 40
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 18
- 235000012431 wafers Nutrition 0.000 claims description 300
- 239000010410 layer Substances 0.000 claims description 76
- 239000012298 atmosphere Substances 0.000 claims description 46
- 238000000137 annealing Methods 0.000 claims description 44
- 239000011800 void material Substances 0.000 claims description 41
- 238000001816 cooling Methods 0.000 claims description 31
- 239000007789 gas Substances 0.000 claims description 29
- 238000009826 distribution Methods 0.000 claims description 26
- 239000002344 surface layer Substances 0.000 claims description 26
- 230000006911 nucleation Effects 0.000 claims description 21
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 18
- 238000005121 nitriding Methods 0.000 claims description 14
- 125000004429 atom Chemical group 0.000 claims description 12
- 150000002926 oxygen Chemical class 0.000 claims description 10
- 229910052786 argon Inorganic materials 0.000 claims description 9
- 230000007423 decrease Effects 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 230000002776 aggregation Effects 0.000 claims description 7
- 239000002244 precipitate Substances 0.000 claims description 7
- 238000009825 accumulation Methods 0.000 claims description 6
- 229910052799 carbon Inorganic materials 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 5
- 229910052739 hydrogen Inorganic materials 0.000 claims description 5
- 239000001257 hydrogen Substances 0.000 claims description 4
- 238000005054 agglomeration Methods 0.000 claims description 3
- 239000001307 helium Substances 0.000 claims description 3
- 229910052734 helium Inorganic materials 0.000 claims description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 3
- 239000008267 milk Substances 0.000 claims description 3
- 210000004080 milk Anatomy 0.000 claims description 3
- 235000013336 milk Nutrition 0.000 claims description 3
- 239000008186 active pharmaceutical agent Substances 0.000 claims 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 1
- 238000005304 joining Methods 0.000 claims 1
- 230000008569 process Effects 0.000 abstract description 23
- 238000012545 processing Methods 0.000 abstract description 5
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 description 19
- 238000007254 oxidation reaction Methods 0.000 description 19
- 238000011282 treatment Methods 0.000 description 18
- 238000004151 rapid thermal annealing Methods 0.000 description 14
- 238000009792 diffusion process Methods 0.000 description 12
- 238000010899 nucleation Methods 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 11
- 230000000694 effects Effects 0.000 description 11
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 238000000151 deposition Methods 0.000 description 8
- 230000001590 oxidative effect Effects 0.000 description 8
- 230000008021 deposition Effects 0.000 description 7
- 230000006641 stabilisation Effects 0.000 description 7
- 238000011105 stabilization Methods 0.000 description 7
- 230000001965 increasing effect Effects 0.000 description 6
- 239000012299 nitrogen atmosphere Substances 0.000 description 6
- 239000007787 solid Substances 0.000 description 6
- 239000007858 starting material Substances 0.000 description 6
- 229910052697 platinum Inorganic materials 0.000 description 5
- 238000004220 aggregation Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- TXUWMXQFNYDOEZ-UHFFFAOYSA-N 5-(1H-indol-3-ylmethyl)-3-methyl-2-sulfanylidene-4-imidazolidinone Chemical compound O=C1N(C)C(=S)NC1CC1=CNC2=CC=CC=C12 TXUWMXQFNYDOEZ-UHFFFAOYSA-N 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 3
- 102100032132 Neuroendocrine convertase 1 Human genes 0.000 description 3
- 101710151472 Neuroendocrine convertase 1 Proteins 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000004090 dissolution Methods 0.000 description 3
- 238000003379 elimination reaction Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 230000008030 elimination Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000004575 stone Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000010301 surface-oxidation reaction Methods 0.000 description 2
- 101100264195 Caenorhabditis elegans app-1 gene Proteins 0.000 description 1
- 241000887125 Chaptalia nutans Species 0.000 description 1
- 208000020401 Depressive disease Diseases 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 241001674048 Phthiraptera Species 0.000 description 1
- 229910052778 Plutonium Inorganic materials 0.000 description 1
- YZCKVEUIGOORGS-NJFSPNSNSA-N Tritium Chemical compound [3H] YZCKVEUIGOORGS-NJFSPNSNSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000002309 gasification Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 239000010977 jade Substances 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 238000013507 mapping Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- OYEHPCDNVJXUIW-UHFFFAOYSA-N plutonium atom Chemical compound [Pu] OYEHPCDNVJXUIW-UHFFFAOYSA-N 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052704 radon Inorganic materials 0.000 description 1
- SYUHGPGVQRZVTB-UHFFFAOYSA-N radon atom Chemical compound [Rn] SYUHGPGVQRZVTB-UHFFFAOYSA-N 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 238000004621 scanning probe microscopy Methods 0.000 description 1
- 239000013049 sediment Substances 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000012163 sequencing technique Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
- 238000003325 tomography Methods 0.000 description 1
- 229910052722 tritium Inorganic materials 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
- H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
- H01L21/3225—Thermally inducing defects using oxygen present in the silicon body for intrinsic gettering
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US9892198P | 1998-09-02 | 1998-09-02 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW434652B true TW434652B (en) | 2001-05-16 |
Family
ID=22271566
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW088115120A TW434652B (en) | 1998-09-02 | 1999-10-20 | Thermal anneal of ideal precipitating wafer to eliminate agglomerated vacancy defects |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US6361619B1 (enExample) |
| EP (1) | EP1129471B1 (enExample) |
| JP (2) | JP4405082B2 (enExample) |
| KR (1) | KR100816696B1 (enExample) |
| CN (1) | CN1181522C (enExample) |
| DE (2) | DE69941196D1 (enExample) |
| TW (1) | TW434652B (enExample) |
| WO (1) | WO2000013209A2 (enExample) |
Families Citing this family (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5994761A (en) * | 1997-02-26 | 1999-11-30 | Memc Electronic Materials Spa | Ideal oxygen precipitating silicon wafers and oxygen out-diffusion-less process therefor |
| US6236104B1 (en) * | 1998-09-02 | 2001-05-22 | Memc Electronic Materials, Inc. | Silicon on insulator structure from low defect density single crystal silicon |
| EP1222324B1 (en) * | 1999-09-23 | 2004-05-06 | MEMC Electronic Materials, Inc. | Czochralski process for growing single crystal silicon by controlling the cooling rate |
| US6555457B1 (en) * | 2000-04-07 | 2003-04-29 | Triquint Technology Holding Co. | Method of forming a laser circuit having low penetration ohmic contact providing impurity gettering and the resultant laser circuit |
| TWI256076B (en) * | 2001-04-11 | 2006-06-01 | Memc Electronic Materials | Control of thermal donor formation in high resistivity CZ silicon |
| TW541581B (en) * | 2001-04-20 | 2003-07-11 | Memc Electronic Materials | Method for the preparation of a semiconductor substrate with a non-uniform distribution of stabilized oxygen precipitates |
| KR20040037031A (ko) * | 2001-06-22 | 2004-05-04 | 엠이엠씨 일렉트로닉 머티리얼즈 인코포레이티드 | 이온 주입에 의한 고유 게터링을 갖는 실리콘 온인슐레이터 구조 제조 방법 |
| KR100745308B1 (ko) * | 2001-12-21 | 2007-08-01 | 엠이엠씨 일렉트로닉 머티리얼즈 인코포레이티드 | 질소/탄소 안정화된 산소 침전물 핵형성 중심을 가진이상적인 산소 침전 실리콘 웨이퍼 및 그 제조 방법 |
| EP1493179B1 (en) * | 2002-04-10 | 2007-12-12 | MEMC Electronic Materials, Inc. | Silicon wafer and process for controlling denuded zone depth in an ideal oxygen precipitating silicon wafer |
| EP1879224A3 (en) * | 2002-04-10 | 2008-10-29 | MEMC Electronic Materials, Inc. | Process for controlling denuded zone depth in an ideal oxygen precipitating silicon wafer |
| US20040259321A1 (en) * | 2003-06-19 | 2004-12-23 | Mehran Aminzadeh | Reducing processing induced stress |
| US6955718B2 (en) * | 2003-07-08 | 2005-10-18 | Memc Electronic Materials, Inc. | Process for preparing a stabilized ideal oxygen precipitating silicon wafer |
| JP4617751B2 (ja) * | 2004-07-22 | 2011-01-26 | 株式会社Sumco | シリコンウェーハおよびその製造方法 |
| US7485928B2 (en) * | 2005-11-09 | 2009-02-03 | Memc Electronic Materials, Inc. | Arsenic and phosphorus doped silicon wafer substrates having intrinsic gettering |
| KR100816198B1 (ko) * | 2006-08-24 | 2008-03-21 | 동부일렉트로닉스 주식회사 | 반도체 장치용 웨이퍼 |
| KR100783440B1 (ko) * | 2006-12-06 | 2007-12-07 | 주식회사 실트론 | 저산소 실리콘 웨이퍼의 결함 분석 방법 |
| US20090004426A1 (en) * | 2007-06-29 | 2009-01-01 | Memc Electronic Materials, Inc. | Suppression of Oxygen Precipitation in Heavily Doped Single Crystal Silicon Substrates |
| US20090004458A1 (en) * | 2007-06-29 | 2009-01-01 | Memc Electronic Materials, Inc. | Diffusion Control in Heavily Doped Substrates |
| US7977216B2 (en) | 2008-09-29 | 2011-07-12 | Magnachip Semiconductor, Ltd. | Silicon wafer and fabrication method thereof |
| US7939432B2 (en) * | 2008-12-15 | 2011-05-10 | Macronix International Co., Ltd. | Method of improving intrinsic gettering ability of wafer |
| JP2009224810A (ja) * | 2009-07-06 | 2009-10-01 | Sumco Corp | シリコンウェーハの製造方法、シリコンウェーハ |
| US20140299872A1 (en) * | 2011-04-06 | 2014-10-09 | Isis Innovation Limited | Heterogeneous intergration of group iii-v or ii-vi materials with silicon or germanium |
| KR101383608B1 (ko) | 2011-10-20 | 2014-04-10 | 주식회사 엘지실트론 | 저온 공정에서 근접 게터링 능력을 갖는 실리콘 웨이퍼 및 그 제조 방법 |
| CN104651946B (zh) * | 2015-03-19 | 2017-06-23 | 太原理工大学 | 基于硅氢键流密度法的硅波导表面光滑工艺 |
| US9758317B2 (en) * | 2015-07-12 | 2017-09-12 | Eaglestone Inc. | Low profile transfer conveyor for use with conveyor systems |
| CN107154353B (zh) * | 2016-03-03 | 2020-01-24 | 上海新昇半导体科技有限公司 | 晶圆热处理的方法 |
| EP3653761B1 (en) * | 2016-12-28 | 2024-02-28 | Sunedison Semiconductor Limited | Silicon wafers with intrinsic gettering and gate oxide integrity yield |
| DE102017219255A1 (de) | 2017-10-26 | 2019-05-02 | Siltronic Ag | Halbleiterscheibe aus einkristallinem Silizium |
| EP3929334A1 (de) | 2020-06-23 | 2021-12-29 | Siltronic AG | Verfahren zur herstellung von halbleiterscheiben |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JPS583375B2 (ja) | 1979-01-19 | 1983-01-21 | 超エル・エス・アイ技術研究組合 | シリコン単結晶ウエハ−の製造方法 |
| JPS5680139A (en) | 1979-12-05 | 1981-07-01 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Manufacture of semiconductor device |
| US4437922A (en) | 1982-03-26 | 1984-03-20 | International Business Machines Corporation | Method for tailoring oxygen precipitate particle density and distribution silicon wafers |
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| US4505759A (en) | 1983-12-19 | 1985-03-19 | Mara William C O | Method for making a conductive silicon substrate by heat treatment of oxygenated and lightly doped silicon single crystals |
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| IT1242014B (it) | 1990-11-15 | 1994-02-02 | Memc Electronic Materials | Procedimento per il trattamento di fette di silicio per ottenere in esse profili di precipitazione controllati per la produzione di componenti elettronici. |
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| JPH04294540A (ja) | 1991-03-25 | 1992-10-19 | Nippon Steel Corp | 半導体の製造方法 |
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| JP2726583B2 (ja) | 1991-11-18 | 1998-03-11 | 三菱マテリアルシリコン株式会社 | 半導体基板 |
| JPH05155700A (ja) | 1991-12-04 | 1993-06-22 | Nippon Steel Corp | 積層欠陥発生核を有するゲッタリングウエハの製造方法および同方法により製造されたシリコンウエハ |
| JPH0684925A (ja) | 1992-07-17 | 1994-03-25 | Toshiba Corp | 半導体基板およびその処理方法 |
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| US5401669A (en) | 1993-05-13 | 1995-03-28 | Memc Electronic Materials, Spa | Process for the preparation of silicon wafers having controlled distribution of oxygen precipitate nucleation centers |
| JPH0786289A (ja) | 1993-07-22 | 1995-03-31 | Toshiba Corp | 半導体シリコンウェハおよびその製造方法 |
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-
1999
- 1999-08-27 WO PCT/US1999/019636 patent/WO2000013209A2/en not_active Ceased
- 1999-08-27 DE DE69941196T patent/DE69941196D1/de not_active Expired - Lifetime
- 1999-08-27 KR KR1020017002617A patent/KR100816696B1/ko not_active Expired - Fee Related
- 1999-08-27 CN CNB998106054A patent/CN1181522C/zh not_active Expired - Fee Related
- 1999-08-27 JP JP2000568103A patent/JP4405082B2/ja not_active Expired - Fee Related
- 1999-08-27 US US09/385,108 patent/US6361619B1/en not_active Expired - Lifetime
- 1999-08-27 DE DE69928434T patent/DE69928434T2/de not_active Expired - Lifetime
- 1999-08-27 EP EP99942528A patent/EP1129471B1/en not_active Expired - Lifetime
- 1999-10-20 TW TW088115120A patent/TW434652B/zh not_active IP Right Cessation
-
2002
- 2002-02-04 US US10/067,070 patent/US6686260B2/en not_active Expired - Lifetime
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2009
- 2009-07-24 JP JP2009173150A patent/JP4681063B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| EP1129471B1 (en) | 2005-11-16 |
| DE69928434D1 (de) | 2005-12-22 |
| KR100816696B1 (ko) | 2008-03-27 |
| CN1181522C (zh) | 2004-12-22 |
| WO2000013209A2 (en) | 2000-03-09 |
| KR20010086360A (ko) | 2001-09-10 |
| JP4405082B2 (ja) | 2010-01-27 |
| JP2002524844A (ja) | 2002-08-06 |
| DE69928434T2 (de) | 2006-07-27 |
| US6686260B2 (en) | 2004-02-03 |
| US20020170631A1 (en) | 2002-11-21 |
| WO2000013209A3 (en) | 2000-12-21 |
| JP2010004054A (ja) | 2010-01-07 |
| US6361619B1 (en) | 2002-03-26 |
| CN1321334A (zh) | 2001-11-07 |
| EP1129471A2 (en) | 2001-09-05 |
| DE69941196D1 (de) | 2009-09-10 |
| JP4681063B2 (ja) | 2011-05-11 |
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