DE69918643D1 - GaN Film mit reduzierter Verspannungsdichte und Herstellungsverfahren - Google Patents

GaN Film mit reduzierter Verspannungsdichte und Herstellungsverfahren

Info

Publication number
DE69918643D1
DE69918643D1 DE69918643T DE69918643T DE69918643D1 DE 69918643 D1 DE69918643 D1 DE 69918643D1 DE 69918643 T DE69918643 T DE 69918643T DE 69918643 T DE69918643 T DE 69918643T DE 69918643 D1 DE69918643 D1 DE 69918643D1
Authority
DE
Germany
Prior art keywords
manufacturing process
gan film
reduced stress
stress density
density
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69918643T
Other languages
English (en)
Other versions
DE69918643T2 (de
Inventor
Shigetaka Tomiya
Kenji Funato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of DE69918643D1 publication Critical patent/DE69918643D1/de
Application granted granted Critical
Publication of DE69918643T2 publication Critical patent/DE69918643T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C43/00—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
    • B29C43/22—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of indefinite length
    • B29C43/222—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of indefinite length characterised by the shape of the surface
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C43/00—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
    • B29C43/22—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of indefinite length
    • B29C43/28—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of indefinite length incorporating preformed parts or layers, e.g. compression moulding around inserts or for coating articles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B38/00—Ancillary operations in connection with laminating processes
    • B32B38/06—Embossing
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/27—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2921—Materials being crystalline insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2924—Structures
    • H10P14/2925—Surface structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3216—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3242—Structure
    • H10P14/3244—Layer structure
    • H10P14/3248—Layer structure consisting of two layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3416—Nitrides
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
    • B29C59/005—Surface shaping of articles, e.g. embossing; Apparatus therefor characterised by the choice of material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
    • B29C59/02—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing
    • B29C59/04—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing using rollers or endless belts
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
    • B29C59/02—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing
    • B29C59/04—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing using rollers or endless belts
    • B29C59/046—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing using rollers or endless belts for layered or coated substantially flat surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2305/00—Condition, form or state of the layers or laminate
    • B32B2305/02—Cellular or porous
    • B32B2305/022—Foam
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00—Electrical equipment
    • B32B2457/20—Displays, e.g. liquid crystal displays, plasma displays
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B32B37/14—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers
    • B32B37/15—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers with at least one layer being manufactured and immediately laminated before reaching its stable state, e.g. in which a layer is extruded and laminated while in semi-molten state
    • B32B37/153—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers with at least one layer being manufactured and immediately laminated before reaching its stable state, e.g. in which a layer is extruded and laminated while in semi-molten state at least one layer is extruded and immediately laminated while in semi-molten state
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/8215—Bodies characterised by crystalline imperfections, e.g. dislocations; characterised by the distribution of dopants, e.g. delta-doping

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
  • Recrystallisation Techniques (AREA)
DE69918643T 1998-11-26 1999-11-26 GaN Film mit reduzierter Verspannungsdichte und Herstellungsverfahren Expired - Lifetime DE69918643T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP33630798 1998-11-26
JP33630798A JP4032538B2 (ja) 1998-11-26 1998-11-26 半導体薄膜および半導体素子の製造方法

Publications (2)

Publication Number Publication Date
DE69918643D1 true DE69918643D1 (de) 2004-08-19
DE69918643T2 DE69918643T2 (de) 2005-07-21

Family

ID=18297769

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69918643T Expired - Lifetime DE69918643T2 (de) 1998-11-26 1999-11-26 GaN Film mit reduzierter Verspannungsdichte und Herstellungsverfahren

Country Status (6)

Country Link
US (1) US6576533B2 (de)
EP (1) EP1005068B1 (de)
JP (1) JP4032538B2 (de)
KR (1) KR100700677B1 (de)
DE (1) DE69918643T2 (de)
TW (1) TW426989B (de)

Families Citing this family (80)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4046114B2 (ja) * 1998-12-21 2008-02-13 日亜化学工業株式会社 窒化物半導体の成長方法及び窒化物半導体素子
JP3427047B2 (ja) * 1999-09-24 2003-07-14 三洋電機株式会社 窒化物系半導体素子、窒化物系半導体の形成方法および窒化物系半導体素子の製造方法
TW518767B (en) * 2000-03-31 2003-01-21 Toyoda Gosei Kk Production method of III nitride compound semiconductor and III nitride compound semiconductor element
US6836498B2 (en) * 2000-06-05 2004-12-28 Sony Corporation Semiconductor laser, semiconductor device and nitride series III-V group compound substrate, as well as manufacturing method thereof
US6627974B2 (en) * 2000-06-19 2003-09-30 Nichia Corporation Nitride semiconductor substrate and method for manufacturing the same, and nitride semiconductor device using nitride semiconductor substrate
JP4556300B2 (ja) * 2000-07-18 2010-10-06 ソニー株式会社 結晶成長方法
JP3556916B2 (ja) 2000-09-18 2004-08-25 三菱電線工業株式会社 半導体基材の製造方法
JP3988018B2 (ja) * 2001-01-18 2007-10-10 ソニー株式会社 結晶膜、結晶基板および半導体装置
JP3679720B2 (ja) 2001-02-27 2005-08-03 三洋電機株式会社 窒化物系半導体素子および窒化物系半導体の形成方法
JP3583375B2 (ja) * 2001-03-02 2004-11-04 三菱電線工業株式会社 ＧａＮ系半導体基材およびその製造方法
EP1378949A4 (de) * 2001-03-21 2006-03-22 Mitsubishi Cable Ind Ltd Lichtemittierendes halbleiterbauelement
JP3595276B2 (ja) * 2001-03-21 2004-12-02 三菱電線工業株式会社 紫外線発光素子
JP3595277B2 (ja) * 2001-03-21 2004-12-02 三菱電線工業株式会社 ＧａＮ系半導体発光ダイオード
US6773504B2 (en) 2001-04-12 2004-08-10 Sumitomo Electric Industries, Ltd. Oxygen doping method to gallium nitride single crystal substrate and oxygen-doped N-type gallium nitride freestanding single crystal substrate
US8633093B2 (en) 2001-04-12 2014-01-21 Sumitomo Electric Industries Ltd. Oxygen doping method to gallium nitride single crystal substrate
JP3714188B2 (ja) 2001-04-19 2005-11-09 ソニー株式会社 窒化物半導体の気相成長方法及び窒化物半導体素子
JP2004262757A (ja) * 2001-04-24 2004-09-24 Sony Corp 窒化物半導体、半導体素子およびこれらの製造方法
JP2003069152A (ja) * 2001-06-15 2003-03-07 Sony Corp マルチビーム半導体レーザ素子
US6967359B2 (en) 2001-09-13 2005-11-22 Japan Science And Technology Agency Nitride semiconductor substrate production method thereof and semiconductor optical device using the same
US7105865B2 (en) * 2001-09-19 2006-09-12 Sumitomo Electric Industries, Ltd. AlxInyGa1−x−yN mixture crystal substrate
JP3864870B2 (ja) * 2001-09-19 2007-01-10 住友電気工業株式会社 単結晶窒化ガリウム基板およびその成長方法並びにその製造方法
JP4290358B2 (ja) * 2001-10-12 2009-07-01 住友電気工業株式会社 半導体発光素子の製造方法
JP2004014943A (ja) * 2002-06-10 2004-01-15 Sony Corp マルチビーム型半導体レーザ、半導体発光素子および半導体装置
JP4443097B2 (ja) * 2002-06-20 2010-03-31 ソニー株式会社 ＧａＮ系半導体素子の作製方法
FR2842832B1 (fr) * 2002-07-24 2006-01-20 Lumilog Procede de realisation par epitaxie en phase vapeur d'un film de nitrure de gallium a faible densite de defaut
JP4856350B2 (ja) * 2002-12-16 2012-01-18 Ｈｏｙａ株式会社 ダイオード
US7453129B2 (en) 2002-12-18 2008-11-18 Noble Peak Vision Corp. Image sensor comprising isolated germanium photodetectors integrated with a silicon substrate and silicon circuitry
US7012314B2 (en) * 2002-12-18 2006-03-14 Agere Systems Inc. Semiconductor devices with reduced active region defects and unique contacting schemes
JP4201079B2 (ja) * 2002-12-20 2008-12-24 昭和電工株式会社 発光素子、その製造方法およびｌｅｄランプ
JP4085986B2 (ja) 2003-04-01 2008-05-14 ソニー株式会社 電池
JP2004327655A (ja) * 2003-04-24 2004-11-18 Sharp Corp 窒化物半導体レーザ素子、その製造方法および半導体光学装置
US7462882B2 (en) 2003-04-24 2008-12-09 Sharp Kabushiki Kaisha Nitride semiconductor light-emitting device, method of fabricating it, and semiconductor optical apparatus
US6921924B2 (en) * 2003-06-18 2005-07-26 United Epitaxy Company, Ltd Semiconductor light-emitting device
JP4593890B2 (ja) * 2003-07-28 2010-12-08 京セラ株式会社 半導体発光素子の製造方法
JP4540347B2 (ja) * 2004-01-05 2010-09-08 シャープ株式会社 窒化物半導体レーザ素子及び、その製造方法
KR100568300B1 (ko) * 2004-03-31 2006-04-05 삼성전기주식회사 질화물 반도체 발광소자 및 그 제조방법
JP5013661B2 (ja) * 2004-03-31 2012-08-29 三洋電機株式会社 窒化物系半導体素子の製造方法及び窒化物系半導体素子
JP3819398B2 (ja) * 2004-04-27 2006-09-06 三菱電線工業株式会社 半導体発光素子およびその製造方法
US7157297B2 (en) * 2004-05-10 2007-01-02 Sharp Kabushiki Kaisha Method for fabrication of semiconductor device
JP4651312B2 (ja) * 2004-06-10 2011-03-16 シャープ株式会社 半導体素子の製造方法
JP4720125B2 (ja) * 2004-08-10 2011-07-13 日立電線株式会社 Ｉｉｉ−ｖ族窒化物系半導体基板及びその製造方法並びにｉｉｉ−ｖ族窒化物系半導体
JP4883931B2 (ja) * 2005-04-26 2012-02-22 京セラ株式会社 半導体積層基板の製造方法
GB2418532A (en) * 2004-09-28 2006-03-29 Arima Optoelectronic Textured light emitting diode structure with enhanced fill factor
JP2006190973A (ja) * 2004-12-06 2006-07-20 Sharp Corp 窒化物系化合物半導体発光素子の製造方法
JP4854275B2 (ja) * 2004-12-08 2012-01-18 シャープ株式会社 窒化物半導体発光素子およびその製造方法
FI20045482A0 (fi) * 2004-12-14 2004-12-14 Optogan Oy Matalamman dislokaatiotiheyden omaava puolijohdesubstraatti, ja menetelmä sen valmistamiseksi
JP2006196631A (ja) 2005-01-13 2006-07-27 Hitachi Ltd 半導体装置及びその製造方法
CN100438109C (zh) * 2005-05-16 2008-11-26 索尼株式会社 发光二极管、集成发光二极管、其制法、生长方法、光源单元装置、背光装置、显示器和电子器件
JP5082278B2 (ja) * 2005-05-16 2012-11-28 ソニー株式会社 発光ダイオードの製造方法、集積型発光ダイオードの製造方法および窒化物系ｉｉｉ−ｖ族化合物半導体の成長方法
KR20060127743A (ko) * 2005-06-06 2006-12-13 스미토모덴키고교가부시키가이샤 질화물 반도체 기판과 그 제조 방법
JP4907929B2 (ja) * 2005-06-27 2012-04-04 株式会社東芝 電界効果型半導体装置及び電界効果型半導体装置の製造方法
CN1992359B (zh) * 2005-09-22 2012-12-12 索尼株式会社 发光二极管及其制造方法
JP4462249B2 (ja) * 2005-09-22 2010-05-12 ソニー株式会社 発光ダイオードの製造方法、集積型発光ダイオードの製造方法および窒化物系ｉｉｉ−ｖ族化合物半導体の成長方法
KR100695117B1 (ko) * 2005-10-25 2007-03-14 삼성코닝 주식회사 ＧａＮ 제조방법
US7560364B2 (en) * 2006-05-05 2009-07-14 Applied Materials, Inc. Dislocation-specific lateral epitaxial overgrowth to reduce dislocation density of nitride films
JP4899740B2 (ja) * 2006-09-19 2012-03-21 パナソニック株式会社 半導体発光素子、半導体発光装置および製造方法
JP2009004566A (ja) * 2007-06-21 2009-01-08 Sumitomo Electric Ind Ltd 半導体装置および半導体装置の製造方法
KR100885190B1 (ko) * 2007-06-29 2009-02-24 우리엘에스티 주식회사 발광소자와 그의 제조방법
KR100986557B1 (ko) * 2008-04-22 2010-10-07 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
JP2009280482A (ja) * 2008-04-25 2009-12-03 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物単結晶自立基板およびそれを用いた半導体デバイスの製造方法
JP5075020B2 (ja) * 2008-06-09 2012-11-14 シャープ株式会社 窒化物半導体レーザ素子および窒化物半導体レーザ素子の製造方法
US8058082B2 (en) 2008-08-11 2011-11-15 Taiwan Semiconductor Manufacturing Company, Ltd. Light-emitting diode with textured substrate
WO2010140564A1 (ja) * 2009-06-01 2010-12-09 三菱化学株式会社 窒化物半導体結晶およびその製造方法
KR101028585B1 (ko) 2009-06-15 2011-04-12 (주)웨이브스퀘어 이종 기판, 그를 이용한 질화물계 반도체 소자 및 그의 제조 방법
JP2012530027A (ja) * 2009-06-15 2012-11-29 コリア エレクトロニクス テクノロジ インスティチュート 異種基板、それを利用した窒化物系半導体素子及びその製造方法
KR101104239B1 (ko) 2010-03-31 2012-01-11 전자부품연구원 이종 기판, 그를 이용한 질화물계 반도체 소자 및 그의 제조 방법
JP4638958B1 (ja) * 2009-08-20 2011-02-23 株式会社パウデック 半導体素子の製造方法
JP5489117B2 (ja) 2009-09-01 2014-05-14 シャープ株式会社 窒化物半導体素子、窒化物半導体素子の製造方法、窒化物半導体層の製造方法および窒化物半導体発光素子
EP2532022B1 (de) * 2010-02-04 2015-05-27 LG Siltron Inc. Verfahren zur herstellung eines gallium-nitrid-wafers
KR101039970B1 (ko) * 2010-02-11 2011-06-09 엘지이노텍 주식회사 반도체층 형성방법 및 발광 소자 제조방법
JP5789782B2 (ja) * 2010-05-20 2015-10-07 パナソニックＩｐマネジメント株式会社 窒化物半導体発光素子および窒化物半導体発光素子の製造方法
JP5527767B2 (ja) * 2010-06-01 2014-06-25 一般財団法人電力中央研究所 炭化珪素単結晶の製造方法
US8569153B2 (en) * 2011-11-30 2013-10-29 Avogy, Inc. Method and system for carbon doping control in gallium nitride based devices
KR101649060B1 (ko) * 2012-03-12 2016-08-17 미쓰비시덴키 가부시키가이샤 태양전지 셀의 제조 방법
CN103811592A (zh) * 2012-11-12 2014-05-21 展晶科技(深圳)有限公司 发光二极管制造方法
US20140158976A1 (en) * 2012-12-06 2014-06-12 Sansaptak DASGUPTA Iii-n semiconductor-on-silicon structures and techniques
US9831273B2 (en) 2013-12-23 2017-11-28 University Of Houston System Flexible single-crystalline semiconductor device and fabrication methods thereof
TWI757331B (zh) * 2017-08-31 2022-03-11 晶元光電股份有限公司 半導體元件及其製造方法
JP7074038B2 (ja) * 2018-12-04 2022-05-24 日本電信電話株式会社 半導体層の形成方法
CN117678081A (zh) * 2021-07-21 2024-03-08 京瓷株式会社 发光器件、显示器件、电子设备、和发光器件的制造方法以及制造装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5158907A (en) * 1990-08-02 1992-10-27 At&T Bell Laboratories Method for making semiconductor devices with low dislocation defects
US6083812A (en) * 1993-02-02 2000-07-04 Texas Instruments Incorporated Heteroepitaxy by large surface steps
JPH0864791A (ja) * 1994-08-23 1996-03-08 Matsushita Electric Ind Co Ltd エピタキシャル成長方法
EP0874405A3 (de) * 1997-03-25 2004-09-15 Mitsubishi Cable Industries, Ltd. Element auf Basis von GaN mit niedriger Versetzungsdichte, seine Verwendung und Herstellungsverfahren
KR100425343B1 (ko) * 2001-04-17 2004-03-30 삼성전기주식회사 반도체 기판 제조방법

Also Published As

Publication number Publication date
TW426989B (en) 2001-03-21
US20020115267A1 (en) 2002-08-22
KR100700677B1 (ko) 2007-03-27
DE69918643T2 (de) 2005-07-21
EP1005068A2 (de) 2000-05-31
US6576533B2 (en) 2003-06-10
JP4032538B2 (ja) 2008-01-16
JP2000164929A (ja) 2000-06-16
KR20000035610A (ko) 2000-06-26
EP1005068A3 (de) 2000-11-15
EP1005068B1 (de) 2004-07-14

Similar Documents

Publication Publication Date Title
DE69943012D1 (de) GaN-Einkristallinessubstrat und Herstellungsverfahren
DE69806137D1 (de) Silizium mit niedriger defektdichte
ITMO960085A0 (it) Contenitore richiudibile e relativo metodo di fabbricazione
DE69842052D1 (de) Gan einkristall-substrat und herstellungsmethode
DE69929456D1 (de) Nahfeldabtastkopf und herstellungsverfahren
DE69940600D1 (de) Dichtungsmaterial und herstellungsverfahren desselben
BR9702408A (pt) Fecho de superfície moldado com apoio e método de fabricação contínua do mesmo
KR950034612A (ko) 반도체 구조물 및 그 제조 방법
DE69834561D1 (de) Halbleiteranordnung und herstellungsverfahren dafür
DE69931221D1 (de) SOI-Substrat und Herstellungsverfahren dafür
PT1048168E (pt) Metodo e instrumento anti-contrafraccao com a utilizacao de tramagem digital
ID27669A (id) Film biodegradabel dan metode pembuatannya
DE59902002D1 (de) Servier- und transportaufnahme
BR9917075B1 (pt) artigo e artigo fotocrÈmico.
DE69935095D1 (de) Halbleiterbauelement und deren Herstellungsverfahren
KR970000599A (ko) 기록재 및 이의제 조방법
ID23008A (id) Kantong dan metode produksi film untuknya
DE69936050D1 (de) Graben-gate halbleiterbauelemente und verfahren zur deren herstellung
DE69936461D1 (de) Magnetsensor und zugehöriges herstellungsverfahren
DE60020737D1 (de) Sic-einkristall und herstellungsverfahren dafür
DE69941874D1 (de) Optielektronisches bauelement und herstellungsverfahren
KR960012601A (ko) 원-직선편파변환기 및 그의 제조방법
DE69941200D1 (de) Elektrolumineszente Vorrichtung und Herstellungsverfahren
DE69932686D1 (de) Halbleiterlichtstrahler und dessen Herstellungsverfahren
DE69937109D1 (de) Zahnbürste und herstellungsverfahren

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)