DE69434450D1 - Dünnfilm-Halbleiterbauelement zur Sichtanzeige und dessen Herstellungsverfahren - Google Patents

Dünnfilm-Halbleiterbauelement zur Sichtanzeige und dessen Herstellungsverfahren

Info

Publication number
DE69434450D1
DE69434450D1 DE69434450T DE69434450T DE69434450D1 DE 69434450 D1 DE69434450 D1 DE 69434450D1 DE 69434450 T DE69434450 T DE 69434450T DE 69434450 T DE69434450 T DE 69434450T DE 69434450 D1 DE69434450 D1 DE 69434450D1
Authority
DE
Germany
Prior art keywords
thin
manufacturing
semiconductor device
visual display
film semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69434450T
Other languages
English (en)
Other versions
DE69434450T2 (de
Inventor
Yuko Inoue
Yukio Kinoshita
Hisao Hayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Application granted granted Critical
Publication of DE69434450D1 publication Critical patent/DE69434450D1/de
Publication of DE69434450T2 publication Critical patent/DE69434450T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
    • H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13454—Drivers integrated on the active matrix substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
DE69434450T 1993-11-05 1994-11-03 Dünnfilm-Halbleiterbauelement zur Sichtanzeige und dessen Herstellungsverfahren Expired - Lifetime DE69434450T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP30133793 1993-11-05
JP30133793A JPH07131030A (ja) 1993-11-05 1993-11-05 表示用薄膜半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
DE69434450D1 true DE69434450D1 (de) 2005-09-15
DE69434450T2 DE69434450T2 (de) 2006-05-24

Family

ID=17895652

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69434450T Expired - Lifetime DE69434450T2 (de) 1993-11-05 1994-11-03 Dünnfilm-Halbleiterbauelement zur Sichtanzeige und dessen Herstellungsverfahren

Country Status (6)

Country Link
US (2) US6153893A (de)
EP (1) EP0652595B1 (de)
JP (1) JPH07131030A (de)
KR (1) KR100317729B1 (de)
CN (1) CN1050939C (de)
DE (1) DE69434450T2 (de)

Families Citing this family (132)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0793135B1 (de) * 1994-11-08 2002-02-20 Citizen Watch Co. Ltd. Flüssigkristallanzeige
US5757456A (en) * 1995-03-10 1998-05-26 Semiconductor Energy Laboratory Co., Ltd. Display device and method of fabricating involving peeling circuits from one substrate and mounting on other
US5994721A (en) * 1995-06-06 1999-11-30 Ois Optical Imaging Systems, Inc. High aperture LCD with insulating color filters overlapping bus lines on active substrate
JPH1010583A (ja) * 1996-04-22 1998-01-16 Sharp Corp アクティブマトリクス基板の製造方法、およびそのアクティブマトリクス基板
US6288764B1 (en) 1996-06-25 2001-09-11 Semiconductor Energy Laboratory Co., Ltd. Display device or electronic device having liquid crystal display panel
JP3499381B2 (ja) * 1996-09-21 2004-02-23 株式会社半導体エネルギー研究所 アクティブマトリクス型表示装置およびその作製方法
TW386238B (en) 1997-01-20 2000-04-01 Semiconductor Energy Lab Semiconductor device and method of manufacturing the same
JP3856889B2 (ja) * 1997-02-06 2006-12-13 株式会社半導体エネルギー研究所 反射型表示装置および電子デバイス
JP3716580B2 (ja) 1997-02-27 2005-11-16 セイコーエプソン株式会社 液晶装置及びその製造方法、並びに投写型表示装置
JP3570410B2 (ja) * 1997-02-27 2004-09-29 セイコーエプソン株式会社 液晶装置用基板、液晶装置及び投写型表示装置
KR100540131B1 (ko) * 1997-07-19 2006-03-22 엘지.필립스 엘시디 주식회사 액정표시장치제조방법
US6667494B1 (en) * 1997-08-19 2003-12-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and semiconductor display device
JP3980159B2 (ja) * 1998-03-05 2007-09-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
GB9806609D0 (en) * 1998-03-28 1998-05-27 Philips Electronics Nv Electronic devices comprising thin-film transistors
US5917199A (en) * 1998-05-15 1999-06-29 Ois Optical Imaging Systems, Inc. Solid state imager including TFTS with variably doped contact layer system for reducing TFT leakage current and increasing mobility and method of making same
KR100276225B1 (ko) * 1998-06-01 2000-12-15 구본준 액정표시장치의 패드 단락 방지구조 및 그 방법
JP2001051292A (ja) * 1998-06-12 2001-02-23 Semiconductor Energy Lab Co Ltd 半導体装置および半導体表示装置
US6351010B1 (en) * 1998-09-22 2002-02-26 Sony Corporation Electrooptical device, substrate for driving electrooptical device and methods for making the same
JP2000111952A (ja) 1998-10-07 2000-04-21 Sony Corp 電気光学装置、電気光学装置用の駆動基板、及びこれらの製造方法
US6909114B1 (en) 1998-11-17 2005-06-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having LDD regions
EP1006589B1 (de) 1998-12-03 2012-04-11 Semiconductor Energy Laboratory Co., Ltd. MOS-Dünnfilmtransistor und Herstellungsverfahren
JP4493744B2 (ja) * 1998-12-28 2010-06-30 シャープ株式会社 液晶表示装置用基板及びその製造方法
US7821065B2 (en) * 1999-03-02 2010-10-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising a thin film transistor comprising a semiconductor thin film and method of manufacturing the same
US7145536B1 (en) 1999-03-26 2006-12-05 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
US6952194B1 (en) * 1999-03-31 2005-10-04 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
US6512504B1 (en) 1999-04-27 2003-01-28 Semiconductor Energy Laborayory Co., Ltd. Electronic device and electronic apparatus
US7245018B1 (en) * 1999-06-22 2007-07-17 Semiconductor Energy Laboratory Co., Ltd. Wiring material, semiconductor device provided with a wiring using the wiring material and method of manufacturing thereof
TW490713B (en) 1999-07-22 2002-06-11 Semiconductor Energy Lab Semiconductor device and manufacturing method thereof
JP2001175198A (ja) * 1999-12-14 2001-06-29 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
KR100660813B1 (ko) * 1999-12-31 2006-12-26 엘지.필립스 엘시디 주식회사 엑스레이 디텍터용 어레이기판 제조방법
JP4118484B2 (ja) 2000-03-06 2008-07-16 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2001257350A (ja) * 2000-03-08 2001-09-21 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP4118485B2 (ja) 2000-03-13 2008-07-16 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4700160B2 (ja) 2000-03-13 2011-06-15 株式会社半導体エネルギー研究所 半導体装置
JP4683688B2 (ja) 2000-03-16 2011-05-18 株式会社半導体エネルギー研究所 液晶表示装置の作製方法
JP4393662B2 (ja) 2000-03-17 2010-01-06 株式会社半導体エネルギー研究所 液晶表示装置の作製方法
JP4769997B2 (ja) * 2000-04-06 2011-09-07 ソニー株式会社 薄膜トランジスタ及びその製造方法、液晶表示装置、液晶表示装置の製造方法、有機ｅｌ装置、有機ｅｌ装置の製造方法
US7525165B2 (en) * 2000-04-17 2009-04-28 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and manufacturing method thereof
US6900084B1 (en) 2000-05-09 2005-05-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a display device
GB0021030D0 (en) * 2000-08-26 2000-10-11 Koninkl Philips Electronics Nv A method of forming a bottom-gate thin film transistor
JP2002083691A (ja) * 2000-09-06 2002-03-22 Sharp Corp アクティブマトリックス駆動型有機ｌｅｄ表示装置及びその製造方法
US6562671B2 (en) * 2000-09-22 2003-05-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device and manufacturing method thereof
KR100496420B1 (ko) * 2001-03-02 2005-06-17 삼성에스디아이 주식회사 2층구조의 소오스/드레인 전극을 갖는 박막 트랜지스터 및그의 제조방법과 이를 이용한 액티브 매트릭스형 표시소자및 그의 제조방법
US7071037B2 (en) 2001-03-06 2006-07-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
CN1316634C (zh) * 2001-10-03 2007-05-16 株式会社东芝 X光平面检测器
US7483001B2 (en) 2001-11-21 2009-01-27 Seiko Epson Corporation Active matrix substrate, electro-optical device, and electronic device
US6933520B2 (en) * 2002-02-13 2005-08-23 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
KR100482162B1 (ko) * 2002-08-28 2005-04-14 엘지.필립스 엘시디 주식회사 구동회로부 일체형 액정표시장치용 박막트랜지스터의제조방법
KR100916606B1 (ko) * 2003-03-07 2009-09-14 엘지디스플레이 주식회사 구동회로 일체형 액정표시장치의 스위칭 소자 및 구동소자및 그 제조방법
US7307317B2 (en) * 2003-04-04 2007-12-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, CPU, image processing circuit and electronic device, and driving method of semiconductor device
JP4906106B2 (ja) * 2003-07-14 2012-03-28 株式会社半導体エネルギー研究所 発光装置
JP4112527B2 (ja) * 2003-07-14 2008-07-02 株式会社半導体エネルギー研究所 システムオンパネル型の発光装置の作製方法
TWI399580B (zh) * 2003-07-14 2013-06-21 Semiconductor Energy Lab 半導體裝置及顯示裝置
KR100595453B1 (ko) * 2003-11-29 2006-06-30 엘지.필립스 엘시디 주식회사 수평전계방식 액정표시소자
EP1709688A4 (de) * 2004-01-30 2014-12-31 Semiconductor Energy Lab Halbleiterbauelement
JP4578826B2 (ja) * 2004-02-26 2010-11-10 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4480442B2 (ja) * 2004-03-31 2010-06-16 Ｎｅｃ液晶テクノロジー株式会社 液晶表示装置の製造方法
KR101020661B1 (ko) 2004-06-02 2011-03-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치
KR101126396B1 (ko) * 2004-06-25 2012-03-28 엘지디스플레이 주식회사 박막트랜지스터 어레이 기판 및 그 제조방법
US7591863B2 (en) * 2004-07-16 2009-09-22 Semiconductor Energy Laboratory Co., Ltd. Laminating system, IC sheet, roll of IC sheet, and method for manufacturing IC chip
US7875506B2 (en) 2004-10-13 2011-01-25 Semiconductor Energy Laboratory Co., Ltd. Etching method and manufacturing method of semiconductor device
US20070042536A1 (en) * 2005-08-17 2007-02-22 Chi-Wen Chen Thin film transistor and method for manufacturing the same
JP4200458B2 (ja) 2006-05-10 2008-12-24 ソニー株式会社 薄膜トランジスタの製造方法
US20100158875A1 (en) * 2006-12-18 2010-06-24 University Of Pittsburgh - Of The Commonwealth System Of Higher Education Muscle derived cells for the treatment of gastro-esophageal pathologies and methods of making and using the same
US7777224B2 (en) * 2007-01-30 2010-08-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US8218211B2 (en) 2007-05-16 2012-07-10 Seereal Technologies S.A. Holographic display with a variable beam deflection
GB0718656D0 (en) * 2007-05-16 2007-11-07 Seereal Technologies Sa Holograms
JP2009049384A (ja) 2007-07-20 2009-03-05 Semiconductor Energy Lab Co Ltd 発光装置
KR101536101B1 (ko) 2007-08-02 2015-07-13 어플라이드 머티어리얼스, 인코포레이티드 박막 반도체 물질들을 이용하는 박막 트랜지스터들
US7786485B2 (en) * 2008-02-29 2010-08-31 Semicondutor Energy Laboratory Co., Ltd. Thin-film transistor and display device
US7812348B2 (en) 2008-02-29 2010-10-12 Semiconductor Energy Laboratory Co., Ltd. Thin-film transistor and display device
US7968880B2 (en) 2008-03-01 2011-06-28 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and display device
US8980066B2 (en) * 2008-03-14 2015-03-17 Applied Materials, Inc. Thin film metal oxynitride semiconductors
JP5411528B2 (ja) 2008-03-18 2014-02-12 株式会社半導体エネルギー研究所 薄膜トランジスタ及び表示装置
US7821012B2 (en) 2008-03-18 2010-10-26 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor
WO2009117438A2 (en) 2008-03-20 2009-09-24 Applied Materials, Inc. Process to make metal oxide thin film transistor array with etch stopping layer
CN102007585B (zh) * 2008-04-18 2013-05-29 株式会社半导体能源研究所 薄膜晶体管及其制造方法
JP5416460B2 (ja) 2008-04-18 2014-02-12 株式会社半導体エネルギー研究所 薄膜トランジスタおよび薄膜トランジスタの作製方法
KR101455317B1 (ko) * 2008-04-18 2014-10-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박막 트랜지스터 및 그 제작 방법
US8053294B2 (en) 2008-04-21 2011-11-08 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of thin film transistor by controlling generation of crystal nuclei of microcrystalline semiconductor film
US8049215B2 (en) 2008-04-25 2011-11-01 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor
JP5542364B2 (ja) 2008-04-25 2014-07-09 株式会社半導体エネルギー研究所 薄膜トランジスタの作製方法
JP5436017B2 (ja) 2008-04-25 2014-03-05 株式会社半導体エネルギー研究所 半導体装置
US8039842B2 (en) 2008-05-22 2011-10-18 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and display device including thin film transistor
KR101602252B1 (ko) 2008-06-27 2016-03-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박막 트랜지스터, 반도체장치 및 전자기기
WO2009157574A1 (en) 2008-06-27 2009-12-30 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor
US8258511B2 (en) 2008-07-02 2012-09-04 Applied Materials, Inc. Thin film transistors using multiple active channel layers
KR101545647B1 (ko) 2008-07-10 2015-08-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광장치 및 전자기기
JP5216716B2 (ja) 2008-08-20 2013-06-19 株式会社半導体エネルギー研究所 発光装置及びその作製方法
US8283667B2 (en) 2008-09-05 2012-10-09 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor
JP2010113253A (ja) * 2008-11-07 2010-05-20 Hitachi Displays Ltd 表示装置及び表示装置の製造方法
JP5498762B2 (ja) 2008-11-17 2014-05-21 株式会社半導体エネルギー研究所 薄膜トランジスタの作製方法
JP2010135384A (ja) * 2008-12-02 2010-06-17 Mitsubishi Electric Corp 薄膜トランジスタアレイ基板、その製造方法及び液晶表示装置
KR101650917B1 (ko) 2009-03-09 2016-08-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박막 트랜지스터
US9018109B2 (en) * 2009-03-10 2015-04-28 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor including silicon nitride layer and manufacturing method thereof
JP5888802B2 (ja) 2009-05-28 2016-03-22 株式会社半導体エネルギー研究所 トランジスタを有する装置
KR101929726B1 (ko) * 2009-07-18 2018-12-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제조 방법
CN102640294B (zh) * 2009-09-24 2014-12-17 应用材料公司 将湿式处理用于源极-漏极金属蚀刻从而制造金属氧化物或金属氮氧化物tft的方法
US8840763B2 (en) 2009-09-28 2014-09-23 Applied Materials, Inc. Methods for stable process in a reactive sputtering process using zinc or doped zinc target
KR101712340B1 (ko) 2009-10-30 2017-03-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 구동 회로, 구동 회로를 포함하는 표시 장치, 및 표시 장치를 포함하는 전자 기기
US8598586B2 (en) 2009-12-21 2013-12-03 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and manufacturing method thereof
TWI535028B (zh) 2009-12-21 2016-05-21 半導體能源研究所股份有限公司 薄膜電晶體
KR101836067B1 (ko) 2009-12-21 2018-03-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박막 트랜지스터와 그 제작 방법
US8476744B2 (en) 2009-12-28 2013-07-02 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor with channel including microcrystalline and amorphous semiconductor regions
US8383434B2 (en) 2010-02-22 2013-02-26 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and manufacturing method thereof
US8343858B2 (en) 2010-03-02 2013-01-01 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing microcrystalline semiconductor film and method for manufacturing semiconductor device
JP5752447B2 (ja) 2010-03-15 2015-07-22 株式会社半導体エネルギー研究所 半導体装置
JP5752446B2 (ja) 2010-03-15 2015-07-22 株式会社半導体エネルギー研究所 半導体装置
US8410486B2 (en) 2010-05-14 2013-04-02 Semiconductor Energy Labortory Co., Ltd. Method for manufacturing microcrystalline semiconductor film and method for manufacturing semiconductor device
JP5933188B2 (ja) * 2010-05-14 2016-06-08 株式会社半導体エネルギー研究所 微結晶シリコン膜及びその作製方法、並びに半導体装置
US8778745B2 (en) 2010-06-29 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR101830193B1 (ko) 2010-07-02 2018-02-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
KR20120003374A (ko) 2010-07-02 2012-01-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
US8916425B2 (en) 2010-07-26 2014-12-23 Semiconductor Energy Laboratory Co., Ltd. Method for forming microcrystalline semiconductor film and method for manufacturing semiconductor device
CN102386072B (zh) 2010-08-25 2016-05-04 株式会社半导体能源研究所 微晶半导体膜的制造方法及半导体装置的制造方法
US9230826B2 (en) 2010-08-26 2016-01-05 Semiconductor Energy Laboratory Co., Ltd. Etching method using mixed gas and method for manufacturing semiconductor device
US8704230B2 (en) 2010-08-26 2014-04-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8558960B2 (en) 2010-09-13 2013-10-15 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and method for manufacturing the same
TWI538218B (zh) 2010-09-14 2016-06-11 半導體能源研究所股份有限公司 薄膜電晶體
US8338240B2 (en) 2010-10-01 2012-12-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing transistor
JP2012089708A (ja) 2010-10-20 2012-05-10 Semiconductor Energy Lab Co Ltd 微結晶シリコン膜の作製方法、半導体装置の作製方法
US8450158B2 (en) 2010-11-04 2013-05-28 Semiconductor Energy Laboratory Co., Ltd. Method for forming microcrystalline semiconductor film and method for manufacturing semiconductor device
US8394685B2 (en) 2010-12-06 2013-03-12 Semiconductor Energy Laboratory Co., Ltd. Etching method and manufacturing method of thin film transistor
US9048327B2 (en) 2011-01-25 2015-06-02 Semiconductor Energy Laboratory Co., Ltd. Microcrystalline semiconductor film, method for manufacturing the same, and method for manufacturing semiconductor device
KR101765731B1 (ko) * 2011-03-09 2017-08-08 삼성디스플레이 주식회사 금속 패턴의 형성 방법 및 이를 포함한 표시 기판의 제조 방법
JP5933897B2 (ja) 2011-03-18 2016-06-15 株式会社半導体エネルギー研究所 半導体装置
US9401396B2 (en) 2011-04-19 2016-07-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device and plasma oxidation treatment method
JP5832780B2 (ja) 2011-05-24 2015-12-16 株式会社半導体エネルギー研究所 半導体装置の製造方法
WO2014109827A1 (en) * 2013-01-08 2014-07-17 Applied Materials, Inc. High mobility film through quantum confinement using metal oxynitrides and oxides
KR102235443B1 (ko) * 2014-01-10 2021-04-02 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 그 제조 방법
KR101875695B1 (ko) * 2015-11-30 2018-07-06 엘지디스플레이 주식회사 액정표시장치용 어레이 기판 및 그 제조 방법
CN107390440B (zh) * 2017-07-18 2020-12-01 昆山龙腾光电股份有限公司 显示装置

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60105275A (ja) * 1983-11-11 1985-06-10 Seiko Instr & Electronics Ltd Ｍｉｓ型薄膜トランジスタ
US5153702A (en) * 1987-06-10 1992-10-06 Hitachi, Ltd. Thin film semiconductor device and method for fabricating the same
US5032883A (en) * 1987-09-09 1991-07-16 Casio Computer Co., Ltd. Thin film transistor and method of manufacturing the same
JPH0828513B2 (ja) * 1987-11-13 1996-03-21 日本電信電話株式会社 薄膜トランジスタ
DE68917774T2 (de) * 1988-04-30 1995-03-16 Sharp Kk Dünnfilm-Halbleitervorrichtung und damit hergestellte Flüssigkristallanzeige.
JPH02109341A (ja) * 1988-10-19 1990-04-23 Fuji Xerox Co Ltd 薄膜トランジスタの製造方法
JPH03167524A (ja) * 1989-11-27 1991-07-19 Sharp Corp カラー液晶表示装置
JP2798769B2 (ja) * 1990-02-22 1998-09-17 三洋電機株式会社 薄膜トランジスタの製造方法
JP2622183B2 (ja) * 1990-04-05 1997-06-18 シャープ株式会社 アクティブマトリクス表示装置
US5946561A (en) * 1991-03-18 1999-08-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
JPH04322469A (ja) * 1991-04-23 1992-11-12 Mitsubishi Electric Corp 薄膜電界効果素子およびその製造方法
JP2650543B2 (ja) * 1991-11-25 1997-09-03 カシオ計算機株式会社 マトリクス回路駆動装置
DE69230138T2 (de) * 1991-11-29 2000-04-27 Seiko Epson Corp Flüssigkristall-anzeigevorrichtung und verfahren zu ihrer herstellung
JP3072637B2 (ja) * 1991-12-25 2000-07-31 セイコーエプソン株式会社 アクティブマトリクス基板
JP2543286B2 (ja) * 1992-04-22 1996-10-16 インターナショナル・ビジネス・マシーンズ・コーポレイション 液晶表示装置
JPH05335580A (ja) * 1992-06-03 1993-12-17 Casio Comput Co Ltd 薄膜トランジスタ
US5589406A (en) * 1993-07-30 1996-12-31 Ag Technology Co., Ltd. Method of making TFT display
JPH07318978A (ja) * 1994-05-20 1995-12-08 Sony Corp 表示素子用薄膜トランジスタアレイ
KR100327086B1 (ko) * 1994-06-15 2002-03-06 구사마 사부로 박막 반도체 장치의 제조방법, 박막 반도체 장치,액정표시장치 및 전자기기
JPH09153458A (ja) * 1995-09-26 1997-06-10 Fujitsu Ltd 薄膜半導体装置およびその製造方法
US5837568A (en) * 1995-12-12 1998-11-17 Sanyo Electric Co., Ltd. Manufacturing method of semiconductor devices

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EP0652595A3 (de) 1997-10-01
US20010014493A1 (en) 2001-08-16
JPH07131030A (ja) 1995-05-19
US6153893A (en) 2000-11-28
KR100317729B1 (ko) 2002-08-27
US6468839B2 (en) 2002-10-22
CN1112730A (zh) 1995-11-29
EP0652595A2 (de) 1995-05-10
EP0652595B1 (de) 2005-08-10
KR950015819A (ko) 1995-06-17
CN1050939C (zh) 2000-03-29

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