DE68917774T2 - Dünnfilm-Halbleitervorrichtung und damit hergestellte Flüssigkristallanzeige. - Google Patents

Dünnfilm-Halbleitervorrichtung und damit hergestellte Flüssigkristallanzeige.

Info

Publication number
DE68917774T2
DE68917774T2 DE68917774T DE68917774T DE68917774T2 DE 68917774 T2 DE68917774 T2 DE 68917774T2 DE 68917774 T DE68917774 T DE 68917774T DE 68917774 T DE68917774 T DE 68917774T DE 68917774 T2 DE68917774 T2 DE 68917774T2
Authority
DE
Germany
Prior art keywords
liquid crystal
thin film
semiconductor device
crystal display
film semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68917774T
Other languages
English (en)
Other versions
DE68917774D1 (de
Inventor
Hajime Shoji
Noriko Watanabe
Hiroshi Hamada
Hiroaki Kato
Toshio Takemoto
Toshihiko Hirobe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP63108697A external-priority patent/JPH01277820A/ja
Priority claimed from JP16979288A external-priority patent/JPH07114283B2/ja
Application filed by Sharp Corp filed Critical Sharp Corp
Publication of DE68917774D1 publication Critical patent/DE68917774D1/de
Application granted granted Critical
Publication of DE68917774T2 publication Critical patent/DE68917774T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H01L29/78663—Amorphous silicon transistors
    • H01L29/78669—Amorphous silicon transistors with inverted-type structure, e.g. with bottom gate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133512—Light shielding layers, e.g. black matrix

Landscapes

  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Nonlinear Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Mathematical Physics (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
DE68917774T 1988-04-30 1989-04-28 Dünnfilm-Halbleitervorrichtung und damit hergestellte Flüssigkristallanzeige. Expired - Fee Related DE68917774T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP63108697A JPH01277820A (ja) 1988-04-30 1988-04-30 薄膜トランジスタ
JP16979288A JPH07114283B2 (ja) 1988-07-07 1988-07-07 薄膜半導体装置

Publications (2)

Publication Number Publication Date
DE68917774D1 DE68917774D1 (de) 1994-10-06
DE68917774T2 true DE68917774T2 (de) 1995-03-16

Family

ID=26448535

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68917774T Expired - Fee Related DE68917774T2 (de) 1988-04-30 1989-04-28 Dünnfilm-Halbleitervorrichtung und damit hergestellte Flüssigkristallanzeige.

Country Status (3)

Country Link
US (1) US5051800A (de)
EP (1) EP0341003B1 (de)
DE (1) DE68917774T2 (de)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5187551A (en) * 1988-04-30 1993-02-16 Sharp Kabushiki Kaisha Thin film semiconductor device and liquid crystal display apparatus thereof for preventing irradiated light from reaching the semiconductor layers
JP2584490B2 (ja) * 1988-06-13 1997-02-26 三菱電機株式会社 マトリクス型カラ−液晶表示装置
JP2714993B2 (ja) * 1989-12-15 1998-02-16 セイコーエプソン株式会社 液晶表示装置
JP2604867B2 (ja) * 1990-01-11 1997-04-30 松下電器産業株式会社 反射型液晶表示デバイス
KR950013426B1 (ko) * 1990-02-28 1995-11-08 가부시기가이샤 히다찌세이사구쇼 마이크로파플라즈마강화 cvd장치 및 박막트랜지스터, 그리고 그 응용장치
US5153142A (en) * 1990-09-04 1992-10-06 Industrial Technology Research Institute Method for fabricating an indium tin oxide electrode for a thin film transistor
JP3255942B2 (ja) * 1991-06-19 2002-02-12 株式会社半導体エネルギー研究所 逆スタガ薄膜トランジスタの作製方法
US5818095A (en) * 1992-08-11 1998-10-06 Texas Instruments Incorporated High-yield spatial light modulator with light blocking layer
US5614731A (en) * 1993-03-15 1997-03-25 Kabushiki Kaisha Toshiba Thin-film transistor element having a structure promoting reduction of light-induced leakage current
US5473168A (en) * 1993-04-30 1995-12-05 Sharp Kabushiki Kaisha Thin film transistor
US5471330A (en) * 1993-07-29 1995-11-28 Honeywell Inc. Polysilicon pixel electrode
JPH07131030A (ja) 1993-11-05 1995-05-19 Sony Corp 表示用薄膜半導体装置及びその製造方法
US5414283A (en) * 1993-11-19 1995-05-09 Ois Optical Imaging Systems, Inc. TFT with reduced parasitic capacitance
US5539219A (en) * 1995-05-19 1996-07-23 Ois Optical Imaging Systems, Inc. Thin film transistor with reduced channel length for liquid crystal displays
US5532180A (en) * 1995-06-02 1996-07-02 Ois Optical Imaging Systems, Inc. Method of fabricating a TFT with reduced channel length
US5650358A (en) * 1995-08-28 1997-07-22 Ois Optical Imaging Systems, Inc. Method of making a TFT having a reduced channel length
JP2798066B2 (ja) 1996-08-05 1998-09-17 日本電気株式会社 薄膜トランジスター、その製造方法および表示装置
KR100356832B1 (ko) * 1999-04-23 2002-10-18 주식회사 현대 디스플레이 테크놀로지 고개구율 및 고투과율 액정 표시 장치의 제조방법
JP3861895B2 (ja) * 2004-09-08 2006-12-27 三菱電機株式会社 半透過型液晶表示装置およびその製造方法
KR20120045178A (ko) * 2010-10-29 2012-05-09 삼성전자주식회사 박막 트랜지스터 및 이의 제조 방법
CN110596027B (zh) * 2019-10-14 2022-09-09 京东方科技集团股份有限公司 测量薄膜掺杂比例的装置及测量方法
US11600656B2 (en) 2020-12-14 2023-03-07 Lumileds Llc Light emitting diode device

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4065781A (en) * 1974-06-21 1977-12-27 Westinghouse Electric Corporation Insulated-gate thin film transistor with low leakage current
JPS56161676A (en) * 1980-05-16 1981-12-12 Japan Electronic Ind Dev Assoc<Jeida> Electrode structure for thin film transistor
JPS6045219A (ja) * 1983-08-23 1985-03-11 Toshiba Corp アクテイブマトリクス型表示装置
JPS60100173A (ja) * 1983-11-07 1985-06-04 セイコーインスツルメンツ株式会社 液晶表示装置の製造方法
JPS60103676A (ja) * 1983-11-11 1985-06-07 Seiko Instr & Electronics Ltd 薄膜トランジスタアレイの製造方法
JPS60213062A (ja) * 1984-04-09 1985-10-25 Hosiden Electronics Co Ltd 薄膜トランジスタの製造方法
JPH0697317B2 (ja) * 1984-04-11 1994-11-30 ホシデン株式会社 液晶表示器
EP0196915B1 (de) * 1985-03-29 1991-08-14 Matsushita Electric Industrial Co., Ltd. Dünnschicht-Transistorenanordnung und Methode zu deren Herstellung
JPH0777264B2 (ja) * 1986-04-02 1995-08-16 三菱電機株式会社 薄膜トランジスタの製造方法

Also Published As

Publication number Publication date
DE68917774D1 (de) 1994-10-06
EP0341003B1 (de) 1994-08-31
EP0341003A2 (de) 1989-11-08
EP0341003A3 (en) 1990-06-06
US5051800A (en) 1991-09-24

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Free format text: PATENTANWAELTE MUELLER & HOFFMANN, 81667 MUENCHEN

8339 Ceased/non-payment of the annual fee